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81. 发明申请

US20070141744A1 Method of fabricating a low, dark-current germanium-on-silicon pin photo detector 有权
标题翻译：制造低，暗电流硅 - 硅引脚光电探测器的方法
公开(公告)号：US20070141744A1
公开(公告)日：2007-06-21
申请号：US11312967
申请日：2005-12-19
申请人： Jong-Jan Lee , Douglas Tweet , Jer-Shen Maa , Sheng Hsu
发明人： Jong-Jan Lee , Douglas Tweet , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/105 , H01L31/1808 , H01L31/1864 , Y02E10/50 , Y02P70/521 , Y10S438/933
摘要： A method of fabricating a low, dark-current germanium-on-silicon PIN photo detector includes preparing a P-type silicon wafer; implanting the P-type silicon wafer with boron ions; activating the boron ions to form a P+ region on the silicon wafer; forming a boron-doped germanium layer on the P+ silicon surface; depositing an intrinsic germanium layer on the born-doped germanium layer; cyclic annealing, including a relatively high temperature first anneal step and a relatively low temperature second anneal step; repeating the first and second anneal steps for about twenty cycles, thereby forcing crystal defects to the P+ germanium layer; implanting ions in the surface of germanium layer to form an N+ germanium surface layer and a PIN diode; activating the N+ germanium surface layer by thermal anneal; and completing device according to known techniques to form a low dark-current germanium-on-silicon PIN photodetector.
摘要翻译：制造低，暗电流锗硅PIN光检测器的方法包括制备P型硅晶片; 用硼离子注入P型硅晶片; 激活硼离子以在硅晶片上形成P +区; 在P +硅表面上形成硼掺杂锗层; 在天然掺杂锗层上沉积本征锗层; 循环退火，包括相对高温的第一退火步骤和相对低温的第二退火步骤; 重复第一和第二退火步骤约20个循环，由此迫使晶体缺陷到P +锗层; 在锗层表面注入离子以形成N +锗表面层和PIN二极管; 通过热退火激活N +锗表面层; 并根据已知技术完成器件以形成低暗电流锗硅PIN光电探测器。

82. 发明申请

US20070001163A1 Floating body germanium phototransistor 有权
标题翻译：浮体锗光电晶体管
公开(公告)号：US20070001163A1
公开(公告)日：2007-01-04
申请号：US11174035
申请日：2005-07-01
申请人： Jong-Jan Lee , Sheng Hsu , Jer-Shen Maa , Douglas Tweet
发明人： Jong-Jan Lee , Sheng Hsu , Jer-Shen Maa , Douglas Tweet
IPC分类号： H01L31/00
CPC分类号： H01L31/1136 , H01L31/028 , H01L31/1808 , Y02E10/547
摘要： A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.
摘要翻译：提出了一种浮体锗（Ge）光电晶体管及其制造工艺。该方法包括：提供硅（Si）衬底; 选择性地形成覆盖Si衬底的绝缘体层; 使用液相外延（LPE）工艺形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成覆盖所述沟道区的栅极电介质，栅电极和栅极间隔; 并且在Ge层中形成源/漏区。 LPE工艺包括用具有大于第一温度的熔化温度的材料包封Ge，并且使用低于第一温度的温度来熔化Ge。 LPE工艺包括：形成覆盖沉积Ge的介电层; 融化Ge; 并且响应于冷却Ge，将外延生长前沿从下面的Si衬底表面横向传播到Ge中。

83. 发明申请

US20060189151A1 Method for forming an infrared photodetector with a vertical optical path 审中-公开
标题翻译：用于形成具有垂直光路的红外光电探测器的方法
公开(公告)号：US20060189151A1
公开(公告)日：2006-08-24
申请号：US11384121
申请日：2006-03-17
申请人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
发明人： Douglas Tweet , Jong-Jan Lee , Jer-Shen Maa , Sheng Hsu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L31/035281 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/0265 , H01L31/101 , H01L31/1812 , Y02E10/50
摘要： Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, selectively forming a SiGe optical path overlying the Si normal feature. In some aspects, the Si substrate surface is formed a first plane and the Si normal feature has walls (sidewalls), normal with respect to the Si substrate surface, and a surface in a second plane, parallel to the first plane. Then, selectively forming a SiGe optical path overlying the Si normal feature includes forming a SiGe vertical optical path overlying the normal feature walls.
摘要翻译：提供了SiGe垂直光路和用于选择性地形成用于IR光电检测的SiGe光路法线结构的方法。该方法包括：形成Si衬底表面; 形成Si特征，相对于诸如沟槽，通孔或支柱的Si衬底表面是正常的; 并且选择性地形成覆盖Si正常特征的SiGe光路。在一些方面，Si衬底表面形成第一平面，并且Si正常特征具有相对于Si衬底表面法线的壁（侧壁）和平行于第一平面的第二平面中的表面。然后，选择性地形成覆盖Si正常特征的SiGe光路包括形成覆盖正常特征壁的SiGe垂直光路。

84. 发明申请

US20060189111A1 Method of making CMOS devices on strained silicon on glass 失效
标题翻译：在玻璃上的应变硅上制造CMOS器件的方法
公开(公告)号：US20060189111A1
公开(公告)日：2006-08-24
申请号：US11060878
申请日：2005-02-18
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Yoshi Ono , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78621
摘要： A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
摘要翻译：在玻璃上的应变硅上制造CMOS器件的方法包括制备玻璃衬底，包括在玻璃衬底上形成应变硅层; 通过应变硅层的等离子体氧化形成氧化硅层; 在氧化硅层上沉积掺杂多晶硅层; 形成多晶硅栅极; 注入离子以形成LDD结构; 在栅极结构上沉积和形成间隔电介质; 植入和激活离子以形成源和漏结构; 沉积一层金属膜; 退火金属膜层，在源极，漏极和栅极结构上形成硅化物; 去除任何未反应的金属膜; 沉积层间电介质层; 并形成接触孔和金属化。

85. 发明授权

US08106473B2 Germanium film optical device 有权
标题翻译：锗膜光学器件
公开(公告)号：US08106473B2
公开(公告)日：2012-01-31
申请号：US13050689
申请日：2011-03-17
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L27/146 , H01L31/068
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

86. 发明申请

US20110163404A1 Germanium Film Optical Device 有权
标题翻译：锗膜光学器件
公开(公告)号：US20110163404A1
公开(公告)日：2011-07-07
申请号：US13050689
申请日：2011-03-17
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L27/146 , H01L31/068
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

87. 发明申请

US20070218622A1 Method of fabricating local interconnects on a silicon-germanium 3D CMOS 有权
标题翻译：在硅 - 锗3D CMOS上制造局部互连的方法
公开(公告)号：US20070218622A1
公开(公告)日：2007-09-20
申请号：US11376542
申请日：2006-03-15
申请人： Jong-Jan Lee , Paul Schuele , Sheng Hsu , Jer-Shen Maa
发明人： Jong-Jan Lee , Paul Schuele , Sheng Hsu , Jer-Shen Maa
IPC分类号： H01L21/8238
CPC分类号： H01L21/823871 , H01L21/02532 , H01L21/02667 , H01L21/28525 , H01L21/76895 , H01L27/11 , H01L27/1108
摘要： A method of fabricating local interconnect on a silicon-germanium 3D CMOS includes fabricating an active silicon CMOS device on a silicon substrate. An insulator layer is deposited on the silicon substrate and a seed window is opened through the insulator layer to the silicon substrate and to a silicon CMOS device gate. A germanium thin film is deposited on the insulator layer and into windows, forming a contact between the germanium thin film and the silicon device. The germanium thin film is encapsulated in a dielectric material. The wafer is heated at a temperature sufficient to flow the germanium, while maintaining the other layers in a solid condition. The wafer is cooled to solidify the germanium as single crystal germanium and as polycrystalline germanium, which provides local interconnects. Germanium CMOS devices may be fabricated on the single crystal germanium thin film.
摘要翻译：在硅 - 锗3D CMOS上制造局部互连的方法包括在硅衬底上制造有源硅CMOS器件。绝缘体层沉积在硅衬底上，并且晶种窗通过绝缘体层向硅衬底和硅CMOS器件栅极打开。在绝缘体层和窗口上沉积锗薄膜，形成锗薄膜和硅器件之间的接触。锗薄膜被封装在电介质材料中。在足以使锗流动的温度下加热晶片，同时将其它层保持在固体状态。将晶片冷却以将锗固化为单晶锗和作为多晶锗，其提供局部互连。可以在单晶锗薄膜上制造锗CMOS器件。

88. 发明申请

US20070218578A1 Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer 失效
标题翻译：具有在SOI晶片上制造的堆叠光电二极管的实时CMOS成像器
公开(公告)号：US20070218578A1
公开(公告)日：2007-09-20
申请号：US11384110
申请日：2006-03-17
申请人： Jong-Jan Lee , Sheng Hsu , Douglas Tweet , Jer-Shen Maa
发明人： Jong-Jan Lee , Sheng Hsu , Douglas Tweet , Jer-Shen Maa
IPC分类号： H01L21/00
CPC分类号： H01L27/14647
摘要： A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.
摘要翻译： CMOS有源像素传感器包括具有在其上形成有绝缘体层的硅衬底和形成在绝缘体层上的顶部硅层的绝缘体上硅衬底。层叠像素传感器单元包括：制造在硅衬底上的底部光电二极管，用于感测最长波长的光; 制造在硅衬底上的中间光电二极管，用于感测中等波长的光; 和制造在顶部硅层上的顶部光电二极管，用于感测较短波长的光，该光被层叠在中间和底部光电二极管的上方。像素晶体管组被制造在顶部硅层上，并且通过在每个光电二极管和相应的像素晶体管之间延伸的电连接与每个像素传感器单元相关联。 CMOS控制电路与有源像素传感器单元的阵列相邻并且与其电连接。

89. 发明申请

US20070190681A1 Silicon-on-insulator near infrared active pixel sensor array 审中-公开
标题翻译：绝缘体上的近红外有源像素传感器阵列
公开(公告)号：US20070190681A1
公开(公告)日：2007-08-16
申请号：US11352724
申请日：2006-02-13
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14649 , H01L27/14609 , H01L27/14689
摘要： A method is provided for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate. The method forms a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer, and forms a second wafer comprising a first silicon oxide layer and a second Si layer. The method bonds the first wafer to the second wafer, forming a SOI substrate. Then, a diode is formed with a p-n junction space charge region extending into the first Si substrate. A thin-film transistor (TFT) is formed in the second Si layer, and interconnects are formed between the TFT and the diode. For example, first Si substrate may have a resistivity of greater than 100 ohm-cm, and the first Si layer may have a dopant concentration in the range of about 1×1016 to about 5×1018 cm−3.
摘要翻译：提供了一种用于在绝缘体上硅（SOI）衬底上形成近红外（NIR）有源像素传感器阵列的方法。该方法形成包括高电阻第一Si衬底和中度掺杂的第一Si层的第一晶片，并且形成包括第一氧化硅层和第二Si层的第二晶片。该方法将第一晶片连接到第二晶片，形成SOI衬底。然后，形成具有延伸到第一Si衬底中的p-n结空间电荷区域的二极管。在第二Si层中形成薄膜晶体管（TFT），并且在TFT和二极管之间形成互连。例如，第一Si衬底可以具有大于100欧姆 - 厘米的电阻率，并且第一Si层可以具有在约1×10 16至约5×10 18范围内的掺杂剂浓度， / SUP> cm 3 -3。

90. 发明申请

US20070099329A1 Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer 有权
标题翻译：在高质量锗外延生长层上制造锗光电探测器的方法
公开(公告)号：US20070099329A1
公开(公告)日：2007-05-03
申请号：US11260955
申请日：2005-10-27
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Hsu , Douglas Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底; 沉积和平坦化氧化硅层; 在氧化硅层中形成与底层硅衬底连通的接触孔; 在氧化硅层和接触孔中生长第一类型的外延锗层; 在外延锗层和任何暴露的氧化硅层上生长内在的锗层; 在内部锗层和任何暴露的氧化硅层上生长第二类型的锗层; 沉积一层覆盖材料取自由多晶硅，多晶硅 - 锗和In 2 N 3 O 3 -SnO 2 2组成的材料组。并蚀刻覆盖材料以形成单独的感测元件。

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