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81. 发明申请

US20070139931A1 LED package and backlight unit using the same 有权
标题翻译： LED封装和背光单元使用相同
公开(公告)号：US20070139931A1
公开(公告)日：2007-06-21
申请号：US11594756
申请日：2006-11-09
申请人： Dae Yeon Kim , Young Sam Park
发明人： Dae Yeon Kim , Young Sam Park
IPC分类号： F21V7/00
CPC分类号： H01L33/58 , H01L33/46
摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.
摘要翻译：本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹槽中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

82. 发明授权

US07115979B2 Light emitting diode package 失效
标题翻译：发光二极管封装
公开(公告)号：US07115979B2
公开(公告)日：2006-10-03
申请号：US10954144
申请日：2004-09-30
申请人： Jung Kyu Park , Young Sam Park
发明人： Jung Kyu Park , Young Sam Park
IPC分类号： H01L23/495
CPC分类号： H01L33/58 , H01L33/483 , H01L33/54 , H01L2224/48091 , H01L2924/00014
摘要： An LED package in which an LED chip a body has a cup part housing an LED chip. The cup part has a step formed in the outer circumference of the top thereof. A lens is mounted on the cup part, and has a flange extended downward from the outer circumference of the lens along the outside wall of the cup part to form a gap between the flange and the downward step of the cup part and to seal the gap from the outside. Resin material fills a space formed between the underside of the lens and the cup part and at least partially the gap formed between the step of the cup part and the lens flange. The resin material is prevented from leaking out of the LED package. The LED package of the invention prevents the creation of voids in the resin material surrounding the LED chip or the leakage of the resin material to the outside.
摘要翻译：一种LED封装，其中LED芯片的主体具有容纳LED芯片的杯部分。杯部具有在其顶部的外周形成的台阶。透镜安装在杯部上，并且具有从透镜的外周沿杯部的外壁向下延伸的凸缘，以在凸缘与杯部的向下台阶之间形成间隙，并且密封间隙从外部。树脂材料填充在透镜的下侧和杯部之间形成的空间，并且至少部分地填充形成在杯部和台阶之间的间隙。防止树脂材料泄漏出LED封装。本发明的LED封装防止在LED芯片周围的树脂材料中产生空隙或树脂材料泄漏到外部。

83. 再颁专利

USRE45356E1 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same 有权
公开(公告)号：USRE45356E1
公开(公告)日：2015-02-03
申请号：US13161932
申请日：2011-06-16
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L29/08
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

84. 发明授权

US08901532B2 Non-volatile programmable device including phase change layer and fabricating method thereof 有权
标题翻译：包括相变层的非易失性可编程装置及其制造方法
公开(公告)号：US08901532B2
公开(公告)日：2014-12-02
申请号：US13466411
申请日：2012-05-08
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

85. 发明授权

US08529531B2 Medical tissue extraction instrument 有权
标题翻译：医用组织提取仪
公开(公告)号：US08529531B2
公开(公告)日：2013-09-10
申请号：US13027746
申请日：2011-02-15
申请人： Young Sam Park , Cheol Seung Kim
发明人： Young Sam Park , Cheol Seung Kim
IPC分类号： A61M1/00
CPC分类号： A61B10/0283
摘要： Disclosed is a medical tissue extraction instrument, which can allow an inspector to accurately locate a fine needle at a desired tissue extraction position without any need for assistance while assuring stable tissue extraction. The medical tissue extraction instrument includes a tissue extraction controller to control the pressure of a suction tube connected to a fine needle during extraction of tissue. The tissue extraction controller includes a suction pressure generator taking the form of a footboard and adapted to control a suction operation of the suction tube by being pushed downward.
摘要翻译：公开了一种医疗组织提取仪器，其可以允许检查者在确保稳定的组织提取的同时不需要帮助而精确地将细针定位在期望的组织提取位置。医疗组织提取仪器包括组织提取控制器，用于在提取组织期间控制连接到细针的抽吸管的压力。组织提取控制器包括采取脚踏板形式的吸入压力发生器，其适于通过向下推动来控制吸管的抽吸操作。

86. 发明授权

US08470719B2 Method for fabricating phase change memory device using solid state reaction 有权
标题翻译：使用固态反应制造相变存储器件的方法
公开(公告)号：US08470719B2
公开(公告)日：2013-06-25
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L21/461 , H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

87. 发明申请

US20120160292A1 THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：热电装置及其制造方法
公开(公告)号：US20120160292A1
公开(公告)日：2012-06-28
申请号：US13323844
申请日：2011-12-13
申请人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/14 , H01L35/34 , H01L35/32 , H01L37/00
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.
摘要翻译：热电装置包括：基板; 第一导电类型的第一纳米线，其形成在基板的一侧上; 与第一纳米线相对的第二导电类型的第二纳米线; 通常连接到第一纳米线的一端和第二纳米线的一端的高温部分; 低温部分分别连接到第一纳米线的另一端和第二纳米线的另一端; 形成在所述第一纳米线和所述第二纳米线上的绝缘层; 形成在第一纳米线上的绝缘层的一部分上的第一金属层，以便控制第一纳米线的电位; 以及形成在第二纳米线上的绝缘层的一部分上的第二金属层，以便控制第二纳米线的电位。

88. 发明授权

US08197090B2 LED package and backlight unit using the same 有权
标题翻译： LED封装和背光单元使用相同
公开(公告)号：US08197090B2
公开(公告)日：2012-06-12
申请号：US12832469
申请日：2010-07-08
申请人： Dae Yeon Kim , Young Sam Park
发明人： Dae Yeon Kim , Young Sam Park
IPC分类号： F21V5/04
CPC分类号： H01L33/58 , H01L33/46
摘要： The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.
摘要翻译：本发明涉及一种LED封装，其具有从LED发射的大的光束角度，简化透镜的形状和组装过程，以及使用该LED封装的背光单元。 LED封装包括壳体，其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜，覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点，使用具有增大的光束角的更简单形状的透镜，并且使混色区域最小化以实现小型化。

89. 发明授权

US08071396B2 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US08071396B2
公开(公告)日：2011-12-06
申请号：US12942255
申请日：2010-11-09
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L21/00
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

90. 发明申请

US20110198498A1 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME 失效
标题翻译：热电装置及其制造方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US20110198498A1
公开(公告)日：2011-08-18
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： H01L23/34 , H01L21/02 , H01J31/49 , G01K7/04 , B82Y99/00
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

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