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    • 81. 发明申请
    • Layout method of power line for semiconductor integrated circuit and semiconductor integrated circuit manufactured by the layout method
    • 半导体集成电路电源线布局方法和半导体集成电路布局方法
    • US20070134852A1
    • 2007-06-14
    • US11523212
    • 2006-09-19
    • Sang Jin ByunHyun Kyu Yu
    • Sang Jin ByunHyun Kyu Yu
    • H01L21/82
    • H01L27/0207
    • Provided are a layout method of a power line for a semiconductor integrated circuit and a semiconductor integrated circuit manufactured by the layout method. The layout method includes the steps of: forming a decoupling capacitor on a substrate; laying out a first metal layer, connected to the decoupling capacitor through a contact, above a region where the decoupling capacitor is formed so as to cover the decoupling capacitor; and laying out a second metal layer above a region where the first metal layer is formed. Therefore, the metal layers and the decoupling capacitor are laid out in the same region so that a chip area can be prevented from being additionally consumed at the time of laying out the decoupling capacitor, and degradation which may occur due to connection line resistance from the power lines to the decoupling capacitors can be prevented.
    • 提供了一种用于半导体集成电路的电力线的布局方法和通过布局方法制造的半导体集成电路。 布局方法包括以下步骤:在衬底上形成去耦电容器; 在形成去耦电容器的区域上方布置第一金属层,其通过接触件连接到去耦电容器,以覆盖去耦电容器; 并在其上形成第一金属层的区域上方布置第二金属层。 因此,金属层和去耦电容器布置在相同的区域中,使得在布置去耦电容器时可以防止芯片面积额外消耗,并且可能由于连接线电阻而导致的劣化 可以防止到去耦电容器的电源线。
    • 82. 发明授权
    • RF active balun circuit for improving small-signal linearity
    • RF主动平衡 - 不平衡转换电路,用于改善小信号线性度
    • US06473595B1
    • 2002-10-29
    • US09437312
    • 1999-11-10
    • Chung Hwan KimCheon Soo KimHyun Kyu YuMin ParkDae Yong Kim
    • Chung Hwan KimCheon Soo KimHyun Kyu YuMin ParkDae Yong Kim
    • H04B110
    • H03F1/223H03F1/3205H03F1/3223
    • The RF active balun circuit for improving a small-signal linearity in a power amplifying circuit of a CDMA system is provided under the construction of a signal amplifier driven by exterior individual direct current gate power VGG1, VGG2, for receiving a communication input signal AC-In and performing a cascode amplification at a normal operation point where a feedback third-order distortion signal becomes large; a distortion signal generator driven by exterior direct current gate power VGG3 different from the above power, for generating the communication input signal AC-In as the third-order distortion signal by nonlinearity of an active element to cancel the third-order distortion signal amplified in the signal amplifier; and an insulator provided for an insulation from a exterior driving power VGG3 applied to the distortion signal generator, thereby maintaining the small size, lower power and high efficient terminal characteristics by using a gain based on gate voltage of FET and the nonlinearity characteristic difference, and improving the linearity of an IC operating by a small signal or medium signal.
    • 用于改善CDMA系统的功率放大电路中的小信号线性度的RF有源平衡 - 不平衡转换器被提供在由外部单独的直流栅极功率VGG1,VGG2驱动的信号放大器的构造下,用于接收通信输入信号AC- 在反馈三阶失真信号变大的正常工作点进行并进行共源共栅放大; 由与上述功率不同的外部直流栅极功率VGG3驱动的失真信号发生器,用于通过有源元件的非线性产生作为三阶失真信号的通信输入信号AC-In,以消除放大的三阶失真信号 信号放大器; 以及提供用于与施加到失真信号发生器的外部驱动电力VGG3绝缘的绝缘体,从而通过使用基于FET的栅极电压的增益和非线性特性差来维持小尺寸,较低功率和高效率的端子特性,以及 改善由小信号或中等信号操作的IC的线性度。