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    • 81. 发明申请
    • Method for forming dual gate electrodes using damascene gate process
    • 使用镶嵌门工艺形成双栅电极的方法
    • US20050153493A1
    • 2005-07-14
    • US11017762
    • 2004-12-22
    • Sang Lee
    • Sang Lee
    • H01L29/423H01L21/336H01L21/8234H01L21/8238H01L27/092H01L29/49H01L29/78H01L21/337
    • H01L21/28202H01L21/82345H01L21/823462H01L29/665H01L29/66545H01L29/6656H01L29/6659H01L29/7833
    • A method for forming dual gate electrodes using a damascene gate process is disclosed. A disclosed method comprises: growing a first gate oxide layer on a semiconductor substrate; performing a thermal treatment for a first gate oxide layer; removing a predetermined part of the first gate oxide layer until the top surface of the semiconductor substrate is exposed; growing a second gate oxide layer as a thin oxide layer on the exposed semiconductor substrate, thereby making the first gate oxide layer as a thick oxide layer; depositing polysilicon on the entire surface of the semiconductor substrate and forming dummy gates through a photolithography and an etching processes; forming sidewall spacers on the lateral faces of the dummy gates; forming source and drain regions in the substrate under both sides of the dummy gates; removing the dummy gates and the second gate oxide layer; forming an insulating layer where the second gate oxide layer is removed; performing a thermal treatment for the insulating layer; filling polysilicon for gate electrodes where the dummy gates were removed; and planarizing the resulting structure until the gate electrodes are exposed.
    • 公开了一种使用镶嵌门工艺形成双栅电极的方法。 所公开的方法包括:在半导体衬底上生长第一栅极氧化物层; 对第一栅极氧化物层进行热处理; 去除第一栅极氧化物层的预定部分直到半导体衬底的顶表面露出; 在暴露的半导体衬底上生长第二栅极氧化物层作为薄氧化物层,从而使第一栅氧化层作为厚氧化物层; 在半导体衬底的整个表面上沉积多晶硅,并通过光刻和蚀刻工艺形成伪栅极; 在所述伪栅极的侧面上形成侧壁间隔物; 在所述虚拟栅极的两侧形成在所述衬底中的源区和漏区; 去除伪栅极和第二栅极氧化物层; 形成除去第二栅极氧化物层的绝缘层; 对绝缘层进行热处理; 为去除虚拟栅极的栅电极填充多晶硅; 并平坦化所得到的结构,直到栅电极露出。
    • 83. 发明申请
    • Detection of a defective disk of a hard disk drive
    • 检测硬盘驱动器的故障磁盘
    • US20050117241A1
    • 2005-06-02
    • US10698866
    • 2003-10-30
    • Geng WangSang Lee
    • Geng WangSang Lee
    • G11B5/09G11B20/18G11B27/36
    • G11B27/36G11B20/1816G11B2220/2516
    • A method and apparatus for detecting a defective disk for a hard disk drive. The method includes placing a disk into a tester so that a first side of the disk is adjacent to a first head of the tester and a second side of the disk is adjacent to a second head. First data is read from the first side of the disk, and second data is read from the second side of the disk. The disk is then flipped so that the second side is adjacent to the first head and the first side is adjacent to the second head. Third data is read from the first side. Fourth data is read from the second side. A first area between a curve generated from the first data and a curve generated from the third data is calculated. Likewise, a second area is calculated between a curve generated from the second data and a curve generated from the fourth data. An average of the first and second areas is then calculated and used to detect a defective disk.
    • 一种用于检测用于硬盘驱动器的有缺陷的盘的方法和装置。 该方法包括将盘放入测试器中,使得盘的第一侧与测试器的第一头相邻,并且盘的第二侧与第二头相邻。 从盘的第一侧读取第一数据,从盘的第二侧读取第二数据。 然后将盘翻转,使得第二侧与第一头相邻,并且第一侧与第二头相邻。 从第一侧读取第三数据。 从第二侧读取第四数据。 计算从第一数据生成的曲线与从第三数据生成的曲线之间的第一区域。 类似地,在从第二数据产生的曲线和从第四数据生成的曲线之间计算第二区域。 然后计算第一和第二区域的平均值,并用于检测有缺陷的盘。
    • 84. 发明申请
    • Microwave tunable device having coplanar waveguide structure
    • 具有共面波导结构的微波可调谐器件
    • US20050116792A1
    • 2005-06-02
    • US10817822
    • 2004-04-06
    • Seung MoonHan RyuMin KwakYoung KimSang LeeSu Lee
    • Seung MoonHan RyuMin KwakYoung KimSang LeeSu Lee
    • H01P5/04H01P1/18H01P3/00H01P3/08
    • H01P3/003H01P1/181
    • Provided is a microwave tunable device having a coplanar waveguide structure, comprising a substrate, a ferroelectric/paraelectric thin film, a first transmission line, and second transmission lines, wherein a transmission line portion is formed with a constant width and an input/output portion is formed with a width larger than that of the transmission line portion in the first transmission line, and a transmission line portion is formed with a constant width and an input/output portion is formed with a narrower width than that of the transmission line portion in the second transmission line, whereby it is possible to minimize impedance difference with a connection line, a reflection loss, and an insertion loss, by controlling the width of the first transmission line and gap between the first and the second transmission lines, in the input/output portion.
    • 本发明提供一种具有共面波导结构的微波可调谐装置,包括基板,铁电/顺电薄膜,第一传输线和第二传输线,其中传输线部分形成为恒定宽度,输入/输出部分 形成为具有比第一传输线中的传输线部分的宽度大的宽度,并且传输线部分形成为具有恒定的宽度,并且输入/输出部分形成为具有比传输线部分的宽度更窄的宽度 第二传输线,通过在输入端控制第一传输线的宽度和第一和第二传输线之间的间隙,可以使与连接线的阻抗差,反射损耗和插入损耗最小化 /输出部分。
    • 87. 发明申请
    • Device for regulating flow rate of intravenous medical solution during injection
    • 注射过程中静脉注射药液流速的装置
    • US20050065480A1
    • 2005-03-24
    • US10497265
    • 2002-11-28
    • Sang LeeHo ChuHyung Sung
    • Sang LeeHo ChuHyung Sung
    • A61M5/142A61M5/168A61M5/00
    • A61M5/16881
    • The object of this invention is to provide a device for regulating the flow rate of an intravenous medical solution during an injection using an intravenous drip unit. The device has a housing (10) mounted to a hose (300) to allow the flow of the solution from a solution container (200) into the vein, and a control member (20) rotatably assembled with the housing to regulate the flow rate of the solution. The housing has first and second seats (11, 12) communicating with inlet and outlet ports, and the control member has first and second bosses (21, 22) seated in the first and second seats. An arc-shaped solution path (23), a radial channel (24) and an annular groove (25) are formed on the control member to regulate the flow rate of the solution in accordance with an adjusted angle of the control member relative to the fixed housing.
    • 本发明的目的是提供一种用于在使用静脉滴注单元的注射期间调节静脉内药物溶液的流速的装置。 该装置具有安装到软管(300)上的壳体(10),以允许溶液从溶液容器(200)流入静脉;以及控制构件(20),其与壳体可旋转地组装以调节流速 的解决方案。 壳体具有与入口和出口连通的第一和第二座(11,12),并且控制构件具有安置在第一和第二座中的第一和第二凸台(21,22)。 在控制构件上形成弧形溶液路径(23),径向通道(24)和环形槽(25),以根据控制构件相对于所述控制构件的调节角度来调节溶液的流速 固定住房。
    • 88. 发明申请
    • Method for dynamically measuring suspension in-plane and out-plane thermal drift hard disk drives
    • 动态测量悬架平面内和热平面散热硬盘驱动器的方法
    • US20050052766A1
    • 2005-03-10
    • US10658565
    • 2003-09-08
    • Geng WangSang Lee
    • Geng WangSang Lee
    • G11B21/21G11B5/02G11B5/596G11B21/02G11B27/36
    • G11B27/36G11B5/596G11B2220/2516
    • A method for dynamic in-situ characterization of in-plane and out-plane thermal drift of a hard disk drive head suspension is provided. A first data track is written. Amplitude and amplitude modulation of the write data signal are measured and track center is determined. Data tracks are then written for a selected time period. Amplitude and amplitude modulation of the write data signal is measured and a new track center of a last data track is determined. Any difference between the track center of the first data track and the track center of the last data track represents in-plane drift. The amplitude and amplitude modulation of the two write data signals is compared and any difference between the measured values is proportional to out-plane drift.
    • 提供了一种用于硬盘驱动器头悬架的面内和外平面热漂移的动态原位表征的方法。 写入第一条数据轨道。 测量写数据信号的幅度和幅度调制,并确定轨道中心。 然后在选定的时间段内写入数据轨道。 测量写入数据信号的幅度和幅度调制,并确定最后数据轨道的新的轨道中心。 第一数据轨道的轨道中心与最后数据轨道的轨道中心之间的任何差异表示平面内漂移。 比较两个写入数据信号的幅度和幅度调制,并且测量值之间的任何差异与外部平面漂移成比例。