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81. 发明授权

US06983531B2 Spin valve head having lead overlay 失效
标题翻译：旋转阀头具有铅覆盖
公开(公告)号：US06983531B2
公开(公告)日：2006-01-10
申请号：US10674572
申请日：2003-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A GMR read head is described. The device comprises a spin valve stack whose top layer is a first capping layer. On the first capping layer are two additional layers, a lead overlay layer and a second capping layer. These are divided into two opposing portions, separated from each other by a trench that is filled with a dielectric. A bias layer and a conductive lead layer contact the stack on its sidewalls.
摘要翻译：描述了GMR读取头。该装置包括其顶层是第一覆盖层的自旋阀叠层。在第一覆盖层上是两个附加层，引线覆盖层和第二覆盖层。它们被分成两个相互相对的部分，它们被填充有电介质的沟槽彼此分开。偏置层和导电引线层在其侧壁上接触堆叠。

82. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

83. 发明授权

US06310751B1 Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：反平行纵向图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06310751B1
公开(公告)日：2001-10-30
申请号：US09182775
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
发明人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , G11B5/3954
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned longitudinal magnetic biasing layers formed of a single longitudinal magnetic biasing material longitudinally magnetically biased in substantially anti-parallel directions. When longitudinally magnetically biasing the second pair of patterned longitudinal magnetic biasing layers there is employed a thermal annealing method employing a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field strength such that the pair of longitudinally magnetically biased patterned first longitudinal magnetic biasing layers is not substantially demagnetized.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双条磁阻（DSMR）传感器元件时，采用两对图案化的纵向磁偏置层，该纵向磁偏置层由基本反平行方向纵向磁偏置的单个纵向磁偏置材料形成。当纵向磁偏置第二对图案化的纵向磁偏置层时，采用采用热退火温度，热退火曝光时间和非本征偏磁场强度的热退火方法，使得该对纵向磁偏压图案化的第一纵向磁性偏压层基本上不退磁。

84. 发明授权

US6091589A Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件
公开(公告)号：US6091589A
公开(公告)日：2000-07-18
申请号：US320756
申请日：1999-05-27
申请人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
发明人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
IPC分类号： G01R33/09 , G11B5/39 , G01B7/14
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , G11B5/3932 , Y10T29/49044 , Y10T29/49046
摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.
摘要翻译：在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。形成在衬底上的是软相邻层（SAL）。另外，形成在软相邻层（SAL）上的是电介质层。最后，至少部分地形成在电介质层上的是磁阻（MR）层。在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。

85. 发明授权

US5985162A Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：用电绝缘软相邻层（SAL）形成软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5985162A
公开(公告)日：1999-11-16
申请号：US810059
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3967 , H01L43/12 , G11B5/313 , G11B5/3163
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。类似地，还在衬底上形成与橡皮布介电层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的，优选至少基本上共同扩展。本发明设想通过本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

86. 发明授权

US5843521A Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer 失效
标题翻译：光电阻框架电磁换能器极层采用高磁导率种子层
公开(公告)号：US5843521A
公开(公告)日：1998-12-01
申请号：US897796
申请日：1997-07-21
申请人： Kochan Ju , Mao-Min Chen , Yimin Guo
发明人： Kochan Ju , Mao-Min Chen , Yimin Guo
IPC分类号： G11B5/31 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3967 , G11B5/3103 , G11B5/3113 , G11B5/3146 , G11B5/3163 , Y10T428/1186 , Y10T428/265 , Y10T428/31678
摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.
摘要翻译：一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。首先提供基板。然后在衬底上形成第一磁极层。然后在第一磁极层上形成间隙填充介电层。然后在填充介电层的间隙上形成种子层。然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在电镀第二磁极层的边缘与其种子层的界面处。然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

87. 发明授权

US4346457A Dovetail propagation structure for contiguous disk bubble devices 失效
标题翻译：连续圆盘气泡装置的燕尾传播结构
公开(公告)号：US4346457A
公开(公告)日：1982-08-24
申请号：US203185
申请日：1980-11-03
申请人： Hung L. Hu , Kochan Ju
发明人： Hung L. Hu , Kochan Ju
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0816
摘要： A propagation track for use in contiguous disk bubble devices consists of a plurality of spaced dovetail shaped elements which are connected at one end thereof by a track portion which faces in the direction of and is substantially perpendicular to the (1,1,2) axis. The first, third and fifth sides of the dovetail structure are elongated and also face in the direction of and are substantially perpendicular to the (1,1,2) axis. The remaining sides of the dovetail structure have different orientations, the second side facing in the direction of and being substantially perpendicular to the (2,1,1) axis, and the fourth side facing in the direction of and being substantially perpendicular to the (1,2,1) axis. The orientation of the two cusps formed by the first and second sides and the fourth and fifth sides is such that the lines bisecting and pointing toward the cusps are substantially parallel to the (1,2,1) and (2,1,1) axes, respectively.
摘要翻译：用于连续圆盘气泡装置的传播轨迹由多个间隔开的燕尾形元件组成，它们的一端连接有一个轨道部分，该轨道部分面向（1,1,2）轴线方向并基本上垂直于。燕尾结构的第一，第三和第五面是细长的并且也面向（1,1,2）轴的方向并基本上垂直于（1,1,2）轴。燕尾结构的剩余侧面具有不同的取向，第二面朝向（2,1,1）轴线的方向并且基本上垂直于（2,1,1）轴线，并且第四侧面朝向（...） 1,2,1）轴。由第一和第二面以及第四和第五面形成的两个尖端的取向使得平分和指向尖端的线基本上平行于（1,2,1）和（2,1,1）轴。

88. 发明申请

US20100142099A1 LOW RESISTANCE TUNNEL MAGNETORESISTANCE (TMR) STRUCTURE 有权
标题翻译：低电阻隧道磁阻（TMR）结构
公开(公告)号：US20100142099A1
公开(公告)日：2010-06-10
申请号：US12332010
申请日：2008-12-10
申请人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
发明人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
IPC分类号： G11B5/33 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , Y10T428/1114
摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.
摘要翻译：一个实施例中的磁性结构包括隧道势垒层; 自由层以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。还介绍了其他系统和方法。

89. 发明授权

US07152304B2 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成横向交换偏置GMR传感器的方法
公开(公告)号：US07152304B2
公开(公告)日：2006-12-26
申请号：US11036959
申请日：2005-01-14
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Fong Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

90. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

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