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81. 发明授权

US09112331B2 Surface emitting laser incorporating third reflector 有权
标题翻译：表面发射激光器并入第三反射器
公开(公告)号：US09112331B2
公开(公告)日：2015-08-18
申请号：US13427105
申请日：2012-03-22
申请人： John E. Northrup , Thomas Wunderer , Noble M. Johnson
发明人： John E. Northrup , Thomas Wunderer , Noble M. Johnson
IPC分类号： H01S5/00 , H01S3/09 , H01S3/091 , H01S3/08 , H01S5/183 , H01S5/14 , H01S5/343 , B82Y20/00 , H01S3/109 , H01S5/04 , H01S5/32
CPC分类号： H01S5/18366 , B82Y20/00 , H01S3/109 , H01S5/041 , H01S5/141 , H01S5/18361 , H01S5/18369 , H01S5/18377 , H01S5/18383 , H01S5/3201 , H01S5/34333
摘要： Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, λpump, an external out-coupling reflector, a distributed Bragg reflector (DBR,) and an active region arranged between the DBR and the out-coupling reflector. The active region is configured to emit radiation at a lasing wavelength, λlase. The VECSEL structure also includes partially reflecting element (PRE) arranged between the gain element and the external out-coupling reflector. The PRE has reflectivity of between about 30% and about 70% for the radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for the radiation at the pump wavelength.
摘要翻译：公开了包括设置在激光光腔中的部分反射元件的表面发射激光器结构。垂直外腔表面发射激光器（VECSEL）结构包括被配置为发射泵浦波长的辐射的泵浦源，λ泵浦，外部输出耦合反射器，分布式布拉格反射器（DBR）和布置在DBR和输出耦合反射器。有源区被配置为发射激光波长λlase的辐射。 VECSEL结构还包括布置在增益元件和外部输出耦合反射器之间的部分反射元件（PRE）。对于激光波长的辐射，PRE具有在约30％至约70％之间的反射率，在泵浦波长处的辐射的反射率在约30％至约70％之间。

82. 发明授权

US09064980B2 Devices having removed aluminum nitride sections 有权
标题翻译：已除去氮化铝部分的装置
公开(公告)号：US09064980B2
公开(公告)日：2015-06-23
申请号：US13217844
申请日：2011-08-25
申请人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
发明人： Christopher L. Chua , Brent S. Krusor , Thomas Wunderer , Noble M. Johnson
IPC分类号： H01L29/15 , H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译：在本体结晶AlN衬底上外延生长一层或多层。外延层包括作为外延层的外延生长的初始表面的表面。在外延生长的初始表面的大部分上基本上去除了AlN衬底。

83. 发明申请

US20130050686A1 GAP DISTRIBUTED BRAGG REFLECTORS 有权
标题翻译： GAP分布式BRAGG反射器
公开(公告)号：US20130050686A1
公开(公告)日：2013-02-28
申请号：US13217859
申请日：2011-08-25
申请人： Thomas Wunderer , Christopher L. Chua , Brent S. Krusor , Noble M. Johnson
发明人： Thomas Wunderer , Christopher L. Chua , Brent S. Krusor , Noble M. Johnson
IPC分类号： G01N21/41 , H01S5/183 , H01L21/66
CPC分类号： H01S5/18363 , B82Y20/00 , G01N21/17 , G01N21/41 , G01N2201/0635 , G01N2201/08 , G02B5/0816 , G02B5/085 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/34333 , H01S2304/04
摘要： A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
摘要翻译：装置包括一个或多个反射器部件。每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。通孔延伸穿过反射器部件的至少一些层。该装置可以包括发光层。

84. 发明申请

US20110303891A1 Mixed Alloy Defect Redirection Region and Devices Including Same 有权
标题翻译：混合合金缺陷重定向区域和包含相同的设备
公开(公告)号：US20110303891A1
公开(公告)日：2011-12-15
申请号：US13096457
申请日：2011-04-28
申请人： Christopher L. Chua , Zhihong Yang , Noble M. Johnson
发明人： Christopher L. Chua , Zhihong Yang , Noble M. Johnson
IPC分类号： H01L33/04
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/04 , H01L33/12
摘要： An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.
摘要翻译：在其上形成有对于光学器件的发射波长透明的诸如AlN的模板层的透明基板上形成诸如发光二极管的光学半导体器件。在模板层上提供混合合金缺陷重定向区域，使得缺陷重定向区域的组成接近或匹配与其邻接的区域的组成。例如，可以调整缺陷重定向区域的Al含量以提供从模板到活性层的阶梯状或渐变的铝含量。应变诱发的裂纹和缺陷密度降低或消除。

85. 发明申请

US20110051768A1 Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding 有权
标题翻译：具有非外延上层的半导体发光器件
公开(公告)号：US20110051768A1
公开(公告)日：2011-03-03
申请号：US12941862
申请日：2010-11-08
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

86. 发明申请

US20100074292A1 Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding 有权
标题翻译：具有非外延上层的半导体发光器件
公开(公告)号：US20100074292A1
公开(公告)日：2010-03-25
申请号：US12237106
申请日：2008-09-24
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/026
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

87. 发明授权

US07528681B2 Acoustic devices using an AlGaN piezoelectric region 失效
标题翻译：使用AlGaN压电区域的声学器件
公开(公告)号：US07528681B2
公开(公告)日：2009-05-05
申请号：US11312035
申请日：2005-12-20
申请人： Clifford F. Knollenberg , Michael Kneissl , Noble M. Johnson
发明人： Clifford F. Knollenberg , Michael Kneissl , Noble M. Johnson
IPC分类号： H03H9/25 , H03H3/02 , H03H9/54
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/173 , H03H9/587 , Y10T29/42
摘要： Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region.In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.
摘要翻译：提供一种形成基于声学的装置的方法，包括形成具有第一表面和第二表面的AlGaN区域。第一电极沉积在AlGaN区域的第一表面上，然后第二电极沉积在AlGaN区域的第二表面上。在本申请的另一方面，通过外延层过度生长工艺形成AlGaN区域。

88. 发明授权

US07232229B2 Laser-based display with position sensitive detector 有权
标题翻译：带位置敏感探测器的激光显示
公开(公告)号：US07232229B2
公开(公告)日：2007-06-19
申请号：US11016062
申请日：2004-12-17
申请人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
发明人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
IPC分类号： G03B21/00 , G03B21/56
CPC分类号： G03B21/60 , G03B21/14 , H04N9/3129
摘要： A display apparatus includes a luminescent screen having pixels formed from blue, green and red luminescent material that are selectively activated by a laser beam to generate a full color image. The display utilizes a closed loop laser scanning/modulating arrangement in which a Position Sensitive Device (PSD) located next to the screen is used to determine the location of the impinging beam, and to transmit timing/location data to the laser addressing system. The laser addressing system uses the timing/location data to adjust and/or modulate the laser beam, thereby generating high-energy beam pulses that activate the selected pixels. The PSD includes vertical strips located along the side edges of the screen, or a sheet that is located behind the screen and accessed, for example, by way of slits or apertures formed in the screen material. The PSD sheet is coupled to an optional power source to form a photon-multiplication device.
摘要翻译：显示装置包括具有由蓝色，绿色和红色发光材料形成的像素的荧光屏，其被激光束选择性地激活以产生全色图像。显示器利用闭环激光扫描/调制装置，其中使用位于屏幕旁边的位置敏感装置（PSD）来确定入射光束的位置，并将定时/位置数据传送到激光寻址系统。激光寻址系统使用定时/位置数据来调整和/或调制激光束，从而产生激活所选择的像素的高能量束脉冲。 PSD包括沿着屏幕的侧边缘定位的垂直条，或者位于屏幕后面的片材，例如通过形成在屏幕材料中的狭缝或孔进入。 PSD片材耦合到可选的电源以形成光子倍增装置。

89. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

90. 再颁专利

USRE33274E Selective disordering of well structures by laser annealing 失效
标题翻译：通过激光退火对阱结构进行选择性排列
公开(公告)号：USRE33274E
公开(公告)日：1990-07-24
申请号：US304671
申请日：1989-01-31
申请人： Robert D. Burnham , Noble M. Johnson
发明人： Robert D. Burnham , Noble M. Johnson
IPC分类号： H01L21/18 , H01L21/268
CPC分类号： B82Y20/00 , H01L21/182 , H01L21/268
摘要： A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature .[.just.]. below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refractive index properties prescribed in the feature by the scanning trace of the laser beam compared to areas of the feature not scanned by the laser beam. The well feature may be a quantum well structure comprising a single quantum well structure, a multiple quantum well structure or a separate confinement single quantum well or a separate confinement multiple quantum well or a heterostructure including an active region being the first layer.

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