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81. 发明授权

US09876331B2 Semiconductor laser having improved index guiding 有权
公开(公告)号：US09876331B2
公开(公告)日：2018-01-23
申请号：US14774416
申请日：2014-03-11
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alfred Lell , Jens Mueller
IPC分类号： H01S5/22 , H01L21/324 , H01S5/02 , H01S5/323 , H01S5/042 , H01S5/028 , H01S5/20 , H01S5/10
CPC分类号： H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
摘要： A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.

82. 发明授权

US09673590B2 Semiconductor stripe laser 有权
公开(公告)号：US09673590B2
公开(公告)日：2017-06-06
申请号：US14704532
申请日：2015-05-05
申请人： OSRAM Opto Semiconductors GmbH
发明人： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
IPC分类号： H01S5/00 , H01S5/042 , H01S5/024 , H01S5/22 , H01S5/022 , H01S5/323
CPC分类号： H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
摘要： A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

83. 发明授权

US09531158B2 Laser light source 有权
标题翻译：激光光源
公开(公告)号：US09531158B2
公开(公告)日：2016-12-27
申请号：US14951096
申请日：2015-11-24
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
IPC分类号： H01S5/00 , H01S5/10 , H01S5/028 , H01S5/22
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.
摘要翻译：一种激光源，包括在衬底上的半导体层序列，并且具有有源区和具有第一和第二部分区域的辐射耦合区域和滤波器结构。有源区域产生相干的第一电磁辐射和非相干的第二电磁辐射，相干的第一电磁辐射沿着发射方向由第一部分区域发射，非相干的第二电磁辐射由第一部分区域和第二部分区域发射。滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。滤波器结构具有布置在半导体层序列的区域上的至少一个滤波器元件，该滤波器元件的延伸方向平行于发射方向并且远离衬底。

84. 发明申请

US20160043530A1 SEMICONDUCTOR LASER HAVING IMPROVED INDEX GUIDING 有权
标题翻译：具有改进指标的半导体激光器
公开(公告)号：US20160043530A1
公开(公告)日：2016-02-11
申请号：US14774416
申请日：2014-03-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Alfred Lell , Jens Mueller
IPC分类号： H01S5/22 , H01S5/042 , H01S5/20 , H01S5/02 , H01S5/323
CPC分类号： H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
摘要： A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.
摘要翻译：一种半导体激光器包括主体，具有设置在主体上的较窄宽度的条带和产生光辐射的活动区域，其中主体的横向相对于条带和侧表面的表面被覆盖电绝缘保护层，作为接触件的导电层设置在带的顶侧上，至少在限定部分中在带的侧表面和保护层之间设置空腔。

85. 发明授权

US09214785B2 Semiconductor laser light source having an edge-emitting semiconductor body 有权
标题翻译：具有边缘发射半导体本体的半导体激光光源
公开(公告)号：US09214785B2
公开(公告)日：2015-12-15
申请号：US14396729
申请日：2013-04-19
申请人： OSRAM Opto Semiconductors GmbH
发明人： Christoph Eichler , Andreas Breidenassel , Alfred Lell
IPC分类号： H01S5/00 , H01S5/10 , H01S5/02 , H01S5/026 , H01S5/028 , H01S5/12 , H01S5/22 , H01S5/20
CPC分类号： H01S5/1003 , H01S5/0202 , H01S5/0203 , H01S5/0264 , H01S5/0286 , H01S5/1017 , H01S5/1237 , H01S5/2063 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).
摘要翻译：提供了包括边缘发射半导体本体（10）的半导体激光源。半导体本体（10）包含具有n型层（111），有源层（112）和p型层（113）的半导体层堆叠（110），其形成用于产生电磁辐射，该电磁辐射包括相干部分（21）。半导体激光源被形成用于使电磁辐射的相干部分（21）与半导体本体（10）的相对于有源层（112）倾斜的去耦表面（101）去耦合。半导体本体（10）包括相对于去耦表面（101）倾斜的另外的外表面（102A，102B，102C），并具有至少一个光扩散子区域（12,12A，12B，12C， 120A，120B），其被设置为将半导体层堆叠（110）产生的电磁辐射的一部分朝向另一外表面（102A，102B，102C）的方向引导。

86. 发明申请

US20150229103A1 Semiconductor Laser Diode 审中-公开
标题翻译：半导体激光二极管
公开(公告)号：US20150229103A1
公开(公告)日：2015-08-13
申请号：US14697228
申请日：2015-04-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： Bernhard Stojetz , Alfred Lell , Christoph Eichler
IPC分类号： H01S5/22 , H01S5/30 , H01S5/343 , H01S5/02
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/0213 , H01S5/0653 , H01S5/2022 , H01S5/3013 , H01S5/34313 , H01S5/34333 , H01S2301/17
摘要： A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.
摘要翻译：半导体激光二极管包括基板。衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光光。

87. 发明授权

US08737445B2 Laser diode assembly 有权
标题翻译：激光二极管组件
公开(公告)号：US08737445B2
公开(公告)日：2014-05-27
申请号：US13857103
申请日：2013-04-04
申请人： OSRAM Opto Semiconductors GmbH
发明人： Alfred Lell , Soenke Tautz , Uwe Strauss , Clemens Vierheilig
IPC分类号： H01S5/00
CPC分类号： H01S5/3013 , H01L2224/29101 , H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/02484 , H01S5/02492 , H01S5/028 , H01S5/0282 , H01S5/2036 , H01S5/30 , H01S5/32341 , H01S2301/176
摘要： A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.
摘要翻译：激光二极管组件包括具有壳体部分和安装部分的壳体，该壳体部分和安装部分连接到壳体部分并且沿着延伸方向远离壳体部分延伸。激光二极管芯片设置在安装部分上。激光二极管芯片在衬底上具有用于发光的有源层的半导体层。壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。在激光二极管芯片和安装部件之间布置有厚度大于或等于2μm的第一焊料层。激光二极管芯片具有辐射耦合输出区域，在其上施加结晶保护层。

88. 发明申请

US20130272333A1 Laser Diode Device 有权
标题翻译：激光二极管装置
公开(公告)号：US20130272333A1
公开(公告)日：2013-10-17
申请号：US13859446
申请日：2013-04-09
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Uwe Strauss , Soenke Tautz , Alfred Lell , Clemens Vierheilig
IPC分类号： H01S5/022
CPC分类号： H01S5/02236 , H01S5/02268 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/028 , H01S5/22 , H01S2301/176
摘要： A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm.
摘要翻译：一种激光二极管装置，其特征在于，包括具有安装部的壳体和基于安装部上的壳体中的氮化物化合物半导体材料的激光二极管芯片，其中，使用焊料层将激光二极管芯片直接安装在安装部上，并且焊料层的厚度大于或等于3μm。

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