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    • 84. 发明申请
    • Image forming apparatus
    • 图像形成装置
    • US20060125374A1
    • 2006-06-15
    • US11288189
    • 2005-11-29
    • Nobuhiro Ito
    • Nobuhiro Ito
    • H01J19/42H01J63/04
    • H01J29/864H01J31/127H01J2329/863H01J2329/8635H01J2329/864H01J2329/8645
    • In a spacer having concave/convex portions to prevent short-time charging in a flat type image forming apparatus in which an electron source substrate and an anode substrate are arranged so as to face each other through the spacer, the charging upon long-time driving due to the concave/convex portions is suppressed. In the spacer in which the surface of an insulating substrate having a rough surface is coated with a high resistance film, the high resistance film has double layers of a low resistance region locating on the substrate side and a high resistance region locating on the front surface side, and a thickness (t) of high resistance film on the slant surface of each of the concave/convex portions and a thickness (s) of high resistance region are set to (t≧dp+λ≧s) for the primary electron penetration length (dp) and the ionization electron diffusion length (λ).
    • 在具有凹凸部的隔片中,为了防止在平面型图像形成装置中进行短时间的充电,其中电子源基板和阳极基板通过间隔件彼此相对配置,长时间驱动时的充电 由于凹/凸部被抑制。 在具有粗糙表面的绝缘基板的表面涂覆有高电阻膜的间隔件中,高电阻膜具有位于基板侧的低电阻区域和位于前表面的高电阻区域的双层 并且每个凹/凸部的倾斜表面上的高电阻膜的厚度(t)和高电阻区域的厚度被设置为(t> = dp +λ> = s) 初级电子穿透长度(dp)和电离电子扩散长度(λ)。
    • 85. 发明申请
    • Method of deuteration
    • 氘化方法
    • US20060116535A1
    • 2006-06-01
    • US10539188
    • 2003-11-07
    • Nobuhiro ItoTsuneaki MaesawaKazushige MutoKosaku HirotaKosaku HirotaHironao Sajiki
    • Nobuhiro ItoTsuneaki MaesawaKazushige MutoKosaku HirotaKosaku HirotaHironao Sajiki
    • C07C35/22
    • C07B59/00C07B2200/05C07C29/00C07C45/00C07C2601/14C07C2602/42C07C2603/68C07C31/125C07C35/08C07C35/29C07C35/37
    • The present invention relates to a method for deuteration of a compound represented by the general formula [1]: R1—X—R2  [1] wherein, R1 represents an alkyl group or an aralkyl group, which may have a carbon-carbon double bond and/or triple bond; R2 represents an alkyl group which may have a carbon-carbon double bond and/or triple bond, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group or a hydroxyl group; X represents a carbonyl group or a hydroxylmethylene group, R1 and R2 may form an alicyclic ring together with a carbon atom contained in X; provided that R2 represents an alkyl group which may have a carbon-carbon double bond and/or triple bond, an aryl group or an aralkyl group when X is a hydroxylmethylene group, comprising reacting the compound represented by the general formula [1] with a heavy hydrogen source in the co-presence of an activated catalyst selected from a palladium catalyst, a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst. The method of the present invention can significantly improve working environment because the deuteration, which has been conventionally carried out under severe conditions such as basic condition, can be carried out under neutral condition. Further, even when the compound represented by the general formula [1] is one having a carbon-carbon double bond or triple bond, the method for deuteration of the present invention enables to efficiently carry out objective deuteration without reduction of said double bond or triple bond.
    • 本发明涉及由通式[1]表示的化合物的氘化方法:<?in-line-formula description =“In-line Formulas”end =“lead”?> R&lt; 1& SUP> -XR <2> <1 in-line-formula description =“In-line Formulas”end =“tail”?>其中,R 1表示 烷基或芳烷基,其可以具有碳 - 碳双键和/或三键; R 2表示可以具有碳 - 碳双键和/或三键,芳基,芳烷基,烷氧基,芳氧基或羟基的烷基; X表示羰基或羟基亚甲基,R 1和R 2可以与X中包含的碳原子一起形成脂环族环; 条件是当X是羟基亚甲基时,R 2表示可以具有碳 - 碳双键和/或三键的烷基,芳基或芳烷基,包括使由 在活性催化剂共催化剂中选择钯催化剂,铂催化剂,铑催化剂,钌催化剂,镍催化剂和钴催化剂,具有重氢源的通式[1]。 本发明的方法可以显着地改善工作环境,因为通常在诸如碱性条件的苛刻条件下常规进行的氘化可以在中性条件下进行。 此外,即使当由通式[1]表示的化合物是具有碳 - 碳双键或三键的化合物时,本发明的氘化方法能够有效地进行目标氘化而不会减少所述双键或三重键 键。