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81. 发明授权

US07161203B2 Gated field effect device comprising gate dielectric having different K regions 有权
标题翻译：门极场效应器件包括具有不同K区域的栅极电介质
公开(公告)号：US07161203B2
公开(公告)日：2007-01-09
申请号：US10861744
申请日：2004-06-04
申请人： Cem Basceri , H. Montgomery Manning , Gurtej S. Sandhu , Kunal R. Parekh
发明人： Cem Basceri , H. Montgomery Manning , Gurtej S. Sandhu , Kunal R. Parekh
IPC分类号： H01L27/108
CPC分类号： H01L29/4983 , H01L21/28194 , H01L29/512 , H01L29/517
摘要： This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.
摘要翻译：本发明包括门控场效应器件，以及形成门控场效应器件的方法。在一种实施方案中，门控场效应器件包括在其间具有沟道区的一对源/漏区。在源极/漏极区域之间的沟道区域附近接收栅极。栅极在源极/漏极区之间具有栅极宽度。栅极电介质被接收在沟道区域和栅极之间。栅极电介质沿着栅极的宽度具有至少两个不同的区域。不同的区域由不同的材料表征，其有效地限定两个不同的区域以具有不同的介电常数k。考虑了其他方面和实现。

82. 发明授权

US07129535B2 Capacitor constructions 有权
标题翻译：电容器结构
公开(公告)号：US07129535B2
公开(公告)日：2006-10-31
申请号：US10704284
申请日：2003-11-06
申请人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
发明人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10855 , H01L27/10852 , H01L28/40 , H01L28/57
摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
摘要翻译：本发明包括其中金属氧化物电介质材料沉积在阻挡层上的方法。阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。电介质材料/阻挡层结构可以结合到电容器中。电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。

83. 发明授权

US06890596B2 Deposition methods 失效
标题翻译：沉积方法
公开(公告)号：US06890596B2
公开(公告)日：2005-05-10
申请号：US10222304
申请日：2002-08-15
申请人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
发明人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
IPC分类号： C23C16/44 , C23C16/455 , C23C16/04
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455
摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.
摘要翻译：沉积方法包括将基板定位在至少部分地由室壁限定的沉积室内。所述室壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。在衬底上设置工艺气体，有效地将层沉积到衬底上。在这种提供过程中，材料粘附到室表面。反应性净化气体从吹扫气体入口排出到沉积室，有效地在室表面上形成反应性气体帘幕并远离衬底，这种反应性气体与这种粘附材料反应。考虑进一步的实现。

84. 发明授权

US06878602B2 Dielectric cure for reducing oxygen vacancies 有权
公开(公告)号：US06878602B2
公开(公告)日：2005-04-12
申请号：US10443490
申请日：2003-05-22
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L21/02 , H01L21/3105 , H01L21/20
CPC分类号： H01L28/55 , H01L21/3105 , H01L28/84
摘要： A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.

85. 发明授权

US06849494B2 Dielectric cure for reducing oxygen vacancies 失效
标题翻译：用于减少氧空位的介电固化
公开(公告)号：US06849494B2
公开(公告)日：2005-02-01
申请号：US10444004
申请日：2003-05-22
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L21/02 , H01L21/3105 , H01L41/8242
CPC分类号： H01L28/55 , H01L21/3105 , H01L28/84
摘要： A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.
摘要翻译：独特的电化学过程填充电介质中的氧空位，同时减少附近电极和导体的氧化。优选地，将电磁场或偏压施加到电介质。偏压导致电介质中的氧空位迁移到电介质的表面。当氧空位向表面迁移时，氧离子填充氧空位。在一个实施例中，独特的等离子体处理提供与氧空位反应的氧离子。在另一个实施方案中，独特的电解处理提供与氧空位反应的氧离子。

86. 发明授权

US06767823B2 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 失效
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US06767823B2
公开(公告)日：2004-07-27
申请号：US10094580
申请日：2002-03-06
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： H01L214763
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.
摘要翻译：公开了在衬底上形成包含层的硅化钛的化学气相沉积方法。首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比率进料到室中。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地增强化学气相沉积在基底上的包含硅化钛的层。

87. 发明授权

US06734051B2 Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates 失效
标题翻译：在多个半导体衬底上形成包含层的硅化钛的等离子体增强化学气相沉积方法
公开(公告)号：US06734051B2
公开(公告)日：2004-05-11
申请号：US10341750
申请日：2003-01-13
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： H01L2184
CPC分类号： C23C16/4407 , C23C16/14 , C23C16/42 , C23C16/4404
摘要： A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.
摘要翻译：在室内环境压力下，在等离子体增强化学气相沉积室上进行第一次清洗。在第一次清洁之后，使用至少TiCl 4，在室内的第一组多个衬底上化学气相沉积包含层的元素钛。此后，包含层的硅化钛是使用至少TiCl 4和硅烷沉积在室内的第二多个基板上的等离子体增强化学气相。此后，在室内在室内进行第二清洗。在第一次清洁之后的一个实施方案中，元素钛包含层在室的内表面上化学气相沉积，而在室内没有接收半导体衬底。在另一个实施方案中，包含硅化钛的层在室的内表面上化学气相沉积，而在腔室内不接收半导体衬底。

88. 发明授权

US06727140B2 Capacitor with high dielectric constant materials and method of making 有权
公开(公告)号：US06727140B2
公开(公告)日：2004-04-27
申请号：US09903160
申请日：2001-07-11
申请人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
发明人： Cem Basceri , Gurtej S. Sandhu , Sam Yang
IPC分类号： H01L218242
CPC分类号： H01L28/75 , H01L21/02178 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31604 , H01L21/31683 , H01L27/10811 , H01L28/55
摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

89. 发明授权

US06596583B2 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 有权
公开(公告)号：US06596583B2
公开(公告)日：2003-07-22
申请号：US10002906
申请日：2001-10-29
申请人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
发明人： Vishnu K. Agarwal , Garo Derderian , Gurtej S. Sandhu , Weimin M. Li , Mark Visokay , Cem Basceri , Sam Yang
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L21/31637 , H01L28/55 , H01L28/65
摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

90. 发明授权

US06579756B2 DRAM processing methods 有权
标题翻译： DRAM处理方法
公开(公告)号：US06579756B2
公开(公告)日：2003-06-17
申请号：US10055512
申请日：2001-10-25
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L218242
CPC分类号： H01L28/55
摘要： A capacitor processing method includes forming a capacitor comprising first and second electrodes having a capacitor dielectric region therebetween. The first electrode interfaces with the capacitor dielectric region at a first interface. The second electrode interfaces with the capacitor dielectric region at a second interface. The capacitor dielectric region has a plurality of oxygen vacancies therein. After forming the capacitor, an electric field is applied to the capacitor dielectric region to cause oxygen vacancies to migrate towards one of the first and second interfaces. Oxygen atoms are preferably provided at the one interface effective to fill at least a portion of the oxygen vacancies in the capacitor dielectric region. Preferably at least a portion of the oxygen vacancies in the high k capacitor dielectric region are filled from oxide material comprising the first or second electrode most proximate the one interface. In one implementation, a DRAM processing method includes forming DRAM circuitry comprising DRAM array capacitors having a common cell electrode, respective storage node electrodes, and a high k capacitor dielectric region therebetween. A voltage is applied to at least one of the first and second electrodes to produce a voltage differential therebetween under conditions effective to cause oxygen vacancies in the high k capacitor dielectric region to migrate toward one of the cell electrode or the respective storage node electrodes and react with oxygen to fill at least a portion of the oxygen vacancies in the capacitor dielectric region.
摘要翻译：电容器处理方法包括形成电容器，该电容器包括在其间具有电容器电介质区域的第一和第二电第一电极在第一界面处与电容器介电区域接合。第二电极在第二界面处与电容器介电区域接合。电容器电介质区域中具有多个氧空位。在形成电容器之后，电场被施加到电容器电介质区域，以引起氧空位向第一和第二界面之一迁移。氧原子优选设置在有效填充电容器电介质区域中的氧空位的至少一部分的一个界面处。优选地，高k电容器介电区域中的氧空位的至少一部分由包括最靠近一个界面的第一或第二电极的氧化物材料填充。在一个实现中，DRAM处理方法包括形成DRAM电路，其包括DRAM阵列电容器，其具有公共单元电极，各自的存储节点电极和它们之间的高k电容器电介质区域。电压施加到第一和第二电极中的至少一个，以在有效地引起高k电容器介电区域中的氧空位迁移到电池电极或相应存储节点电极之一的条件下产生它们之间的电压差，并且反应用氧气填充电容器介质区域中的氧空位的至少一部分。

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