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81. 发明申请

US20050095822A1 Thin-film semiconductor device, manufacturing method of the same and image display apparatus 失效
标题翻译：薄膜半导体器件及其制造方法以及图像显示装置
公开(公告)号：US20050095822A1
公开(公告)日：2005-05-05
申请号：US11004858
申请日：2004-12-07
申请人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Seong-Kee Park , Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/045 , H01L29/66772 , H01L29/78654 , H01L29/78696
摘要： A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.
摘要翻译：提供一种形成薄膜半导体器件的方法，其中通过利用由于表面张力引起的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛区熔融的半导体，其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

82. 发明授权

US06872977B2 Thin film semiconductor device, production process and information displays 有权
标题翻译：薄膜半导体器件，生产工艺和信息显示
公开(公告)号：US06872977B2
公开(公告)日：2005-03-29
申请号：US10188817
申请日：2002-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/036
CPC分类号： H01L21/02686 , H01L21/02609 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/045 , H01L29/6675 , H01L29/66765 , H01L29/78648 , H01L29/78672 , H01L29/78678
摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.
摘要翻译：薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。半导体薄膜具有其缺陷密度为1×10 17 cm -3以下的第一半导体薄膜区域和缺陷密度为1×10 17 cm -3的第二半导体薄膜区域， 3>以上以条纹的形式交替配置。第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。

83. 发明授权

US06501095B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06501095B2
公开(公告)日：2002-12-31
申请号：US09791827
申请日：2001-02-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba , Yoshinobu Kimura , Seong-Kee Park
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L2904
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/045 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single crystal) a low-temperature poly-Si thin film being an elemental material of the thin film transistor in a state trued up to a crystal orientation having the most stable lattice structure in consideration of strain at the interface with a substrate, and by controlling a crystal position. The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fact that a {110} surface of IV group crystal (crystal composed of either one or a mixed crystal of them selected from a group of C, Si, Ge, Sn, and Pb) has the smallest dangling bond density, by minimizing strain energy at the substrate interface, and by making crystal growth with selection of crystal orientations having growth lengths equivalent to channel lengths.
摘要翻译：本发明涉及一种薄膜晶体管器件，其目的是通过大晶粒尺寸（准单晶）实现高迁移率的薄膜晶体管器件，作为元素材料的低温多晶硅薄膜考虑到与衬底的界面处的应变，并且通过控制晶体位置，在处于具有最稳定的晶格结构的晶体取向的状态下的薄膜晶体管。通过实现高移动性可以实现上述目的薄膜晶体管器件以通过注意以下事实来形成具有大晶粒尺寸和晶体取向晶体的沟道的方式：注意以下事实：IV族晶体的{110}表面（由它们中的一种或其混晶构成的晶体被选择通过使基板界面处的应变能最小化，并且通过选择使晶体生长，从C，Si，Ge，Sn和Pb组中获得最小的悬空键密度具有等同于通道长度的生长长度的晶体取向。

84. 发明授权

US5552375A Method for forming high T.sub.c superconducting devices 失效
标题翻译：形成高Tc超导器件的方法
公开(公告)号：US5552375A
公开(公告)日：1996-09-03
申请号：US192573
申请日：1994-02-07
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：公开了形成超导体的方法，包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流经该超导体的电流的方向。

85. 发明授权

US5317168A Superconducting field effect transistor 失效
标题翻译：超导场效应晶体管
公开(公告)号：US5317168A
公开(公告)日：1994-05-31
申请号：US978454
申请日：1992-11-19
申请人： Toshikazu Nishino , Ushio Kawabe , Fumio Murai , Tokuo Kure , Mutsuko Hatano , Haruhiro Hasegawa
发明人： Toshikazu Nishino , Ushio Kawabe , Fumio Murai , Tokuo Kure , Mutsuko Hatano , Haruhiro Hasegawa
IPC分类号： H01L29/43 , H01L39/22
CPC分类号： H01L29/437
摘要： A superconducting field effect transistor which is very small in size and high in dimensional accuracy, has a first layer of material forming a control electrode and a second layer of another material is disposed on said first layer. A width of said first layer in a direction toward a superconducting source electrode and a superconducting drain electrode is narrower than a width of the second layer in the same direction. Polycrystalline silicon may be used as the control electrode while the second layer can be made of silicon nitride. Furthermore, a side surface of the control electrode may be coated with an insulator film. Accordingly, the above transistor has a fine structure gate electrode part that can be fabricated easily and accurately.
摘要翻译：尺寸非常小，尺寸精度高的超导场效应晶体管具有形成控制电极的第一层材料，另一材料的第二层设置在所述第一层上。所述第一层在朝向超导源电极和超导漏电极的方向上的宽度比相同方向上的第二层的宽度窄。多晶硅可以用作控制电极，而第二层可以由氮化硅制成。此外，控制电极的侧表面可以涂覆有绝缘膜。因此，上述晶体管具有可以容易且精确地制造的精细结构的栅电极部。

86. 发明授权

US5256897A Oxide superconducting device 失效
标题翻译：氧化物超导器件
公开(公告)号：US5256897A
公开(公告)日：1993-10-26
申请号：US729867
申请日：1991-07-10
申请人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
发明人： Haruhiro Hasegawa , Toshiyuki Aida , Toshikazu Nishino , Mutsuko Hatano , Hideaki Nakane , Tokuumi Fukazawa
IPC分类号： H01L39/22 , H01L29/161 , H01L29/48 , H01L29/56
CPC分类号： H01L39/22 , H01L39/228
摘要： An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.
摘要翻译：氧化物超导装置具有由至少一个氧化物超导体和至少一个其中已经产生载流子的绝缘体组成的结结构。作为已经生成载流子的绝缘体，可以使用例如掺杂有Nb的SrTiO 3。利用这种装置，可以在接合处获得整流特性。

87. 发明授权

US08638313B2 Electrostatic capacitance type touch panel and screen input display device including the same 有权
标题翻译：静电电容型触摸屏和屏幕输入显示装置包括相同的
公开(公告)号：US08638313B2
公开(公告)日：2014-01-28
申请号：US12423858
申请日：2009-04-15
申请人： Masayoshi Kinoshita , Norio Mamba , Mutsuko Hatano
发明人： Masayoshi Kinoshita , Norio Mamba , Mutsuko Hatano
IPC分类号： G06F3/044
CPC分类号： G06F3/044
摘要： An electrostatic capacitance type touch panel includes: a substrate; a plurality of first electrodes disposed in parallel on the substrate; an insulating film formed so as to cover the plurality of first electrodes; a plurality of second electrodes disposed in parallel to intersect the plurality of first electrodes on the insulating film; a plurality of first drawing wiring lines connected to the plurality of first electrodes to be drawn to a connection terminal; and a plurality of second drawing wiring lines connected to the plurality of second electrodes to be drawn to the connection terminal. The plurality of first drawing wiring lines have different lengths, larger widths as the lengths are shorter, and larger intervals between adjacent two of the plurality of first drawing wiring lines as the lengths are longer.
摘要翻译：静电电容型触摸面板包括：基板; 在所述基板上平行设置的多个第一电极; 形成为覆盖所述多个第一电极的绝缘膜; 平行设置的多个第二电极，与绝缘膜上的多个第一电极相交; 连接到所述多个第一电极的多个第一拉丝布线，以被拉到连接端子; 以及连接到所述多个第二电极以被吸引到所述连接端子的多个第二绘制布线。多个第一拉丝布线具有不同的长度，长度较短的宽度较大，并且多个第一拉丝布线中的相邻两个之间的长度较长的间隔较大。

88. 发明授权

US08629451B2 Display device 有权
公开(公告)号：US08629451B2
公开(公告)日：2014-01-14
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

89. 发明授权

US08344382B2 Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device 失效
标题翻译：半导体装置及其制造方法以及使用该半导体装置的显示装置
公开(公告)号：US08344382B2
公开(公告)日：2013-01-01
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

90. 发明授权

US08338867B2 Highly sensitive photo-sensing element and photo-sensing device using the same 有权
标题翻译：高灵敏度感光元件和使用其的感光元件
公开(公告)号：US08338867B2
公开(公告)日：2012-12-25
申请号：US13236338
申请日：2011-09-19
申请人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
发明人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , G09G2360/14 , H01L31/1136
摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.
摘要翻译：根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。感光元件和传感器驱动电路都由多晶硅膜制成。作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。在一边。

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