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1. 发明授权

US07666769B2 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US07666769B2
公开(公告)日：2010-02-23
申请号：US11702576
申请日：2007-02-06
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

2. 发明授权

US07456913B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07456913B2
公开(公告)日：2008-11-25
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

3. 发明申请

US20070246709A1 THIN FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件
公开(公告)号：US20070246709A1
公开(公告)日：2007-10-25
申请号：US11768588
申请日：2007-06-26
申请人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

4. 发明授权

US06949452B2 Method for fabricating image display device 有权
公开(公告)号：US06949452B2
公开(公告)日：2005-09-27
申请号：US10602738
申请日：2003-06-25
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L21/82 , H01L21/26
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

5. 发明授权

US06903368B2 Thin-film transistor device, its manufacturing process, and image display using the device 失效
标题翻译：薄膜晶体管器件，其制造工艺和使用该器件的图像显示
公开(公告)号：US06903368B2
公开(公告)日：2005-06-07
申请号：US10190670
申请日：2002-07-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takeo Shiba
IPC分类号： G02F1/1345 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/02 , H01L27/12 , H01L29/04 , H01L29/786 , H01L31/20
CPC分类号： H01L21/02691 , H01L21/02527 , H01L21/02532 , H01L21/02535 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/268 , H01L27/0207 , H01L27/1214 , H01L27/1285 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A thin film made of silicon or another IV-group crystals (crystals and mixed crystals of C, Ge, Sn, and Pb) is twice scanned with a laser beam moving in two lateral directions in which crystal grains grow larger in order to form high-quality polycrystals in exact positions in the thin film, while defects uncontrollable by the prior arts are being reduced significantly, to realize a high-quality TFT device. The laser-scanning directions are defined by the crystallization face orientations.
摘要翻译：由硅或其他IV族晶体（C，Ge，Sn和Pb的晶体和混晶）制成的薄膜在两个横向移动的激光束被扫描两次，其中晶粒长大以形成高优质的多晶体在薄膜中的确切位置，而现有技术不可控制的缺陷被显着地减少，以实现高质量的TFT器件。激光扫描方向由结晶面取向定义。

6. 发明申请

US20050085021A1 Display device and a method for manufacturing the same 有权
公开(公告)号：US20050085021A1
公开(公告)日：2005-04-21
申请号：US10983683
申请日：2004-11-09
申请人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
发明人： Takeo Shiba , Mutsuko Hatano , Shinya Yamaguchi , Seong-kee Park
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： G02F1/13454 , G02F2202/104 , H01L27/12 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78675
摘要： An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.

7. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

8. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

9. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

10. 发明授权

US06716726B2 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof 有权
标题翻译：含有多晶Si-Ge合金的薄膜半导体器件及其制造方法
公开(公告)号：US06716726B2
公开(公告)日：2004-04-06
申请号：US10277140
申请日：2002-10-22
申请人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
发明人： Shinya Yamaguchi , Takeo Shiba , Mutsuko Hatano , Seong-Kee Park
IPC分类号： H01L2120
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78675 , H01L29/78684 , Y10S438/933
摘要： The present invention relates to a thin film transistor, in a low-temperature poly-Si thin film becoming an elemental material of the thin film transistor, an object of the invention is to provide the thin film transistor suitable for realizing an image display device having a high performance and a large area at low cost by realizing a poly-crystalline thin film having a crystal structure restraining current scattering in a grain boundary, lessening surface roughness, and capable of realizing high mobility even to a positive hole current. The object described above is achieved by realizing a TFT with high mobility by restraining a current scattering factor in a grain boundary of crystal with an introduction of Ge into the poly-crystalline Si thin film and with a difference in ratios of Ge compositions between an interior grain of crystal and a grain boundary of crystal resulted from a phase separation involved in crystallization, and by restraining surface roughness using a difference in volumes in a crystal.
摘要翻译：薄膜晶体管本发明涉及一种成为薄膜晶体管的元素材料的低温多晶硅薄膜中的薄膜晶体管，其目的在于提供一种薄膜晶体管，其适用于实现具有通过实现具有抑制晶界中的电流散射的晶体结构的多晶薄膜，降低表面粗糙度，并且即使对于空穴电流也能实现高迁移率，因此具有高性能和大面积的低成本。目的描述通过在晶体的晶界中抑制电流散射因子，通过在多晶Si薄膜中引入Ge并且在晶体的内部晶粒之间的Ge组成的比率的差异来实现具有高迁移率的TFT，并且晶体的晶界由结晶涉及的相分离产生，并且通过使用差异来抑制表面粗糙度在一个水晶体积。

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