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    • 88. 发明授权
    • Photoelectric conversion semiconductor device
    • 光电转换半导体器件
    • US5744850A
    • 1998-04-28
    • US733967
    • 1996-10-18
    • Keiji SatoYutaka SaitohTadao Akamine
    • Keiji SatoYutaka SaitohTadao Akamine
    • H01L31/10H01L27/144H01L31/107H01L31/075H01L31/105H01L31/117
    • H01L27/1443H01L31/107
    • A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.
    • 提供了具有可容易地制造的放大功能的新颖的光电转换半导体器件。 在其一个表面上形成杂质浓度高于N型半导体衬底的杂质浓度的N +型杂质区域,在相对的表面上形成P +型杂质区域。 形成了延伸到N型半导体衬底的超过N +型杂质域的SiO 2膜,Si 3 N 4膜和SiO 2膜。 在N +型杂质区域上形成阳极电极,在P +型杂质区域上形成阴极电极。 在SiO 2膜即顶层上形成多晶硅栅电极,在其上形成Al栅电极。 在阳极电极和阴极电极之间施加反向电压,并且在阳极电极和Al栅电极之间施加预定电压。
    • 89. 发明授权
    • Electrically heated catalytic converter for an engine
    • 用于发动机的电加热催化转化器
    • US5573731A
    • 1996-11-12
    • US449325
    • 1995-05-24
    • Kouji YoshizakiMasahiko OgaiTakuzou KakoYuuji NakajimaKenji FujinoKazunori ItohShohgo KonyaKeiji Sato
    • Kouji YoshizakiMasahiko OgaiTakuzou KakoYuuji NakajimaKenji FujinoKazunori ItohShohgo KonyaKeiji Sato
    • F01N3/20F01N3/28
    • F01N3/281F01N3/2026F01N2330/02F01N2330/04Y02T10/26Y10T428/1234Y10T428/12347
    • The electrically heated catalytic converter of the present invention includes a catalyst substrate, which is formed as a scroll-like cylindrical laminated assembly. The assembly is formed by laminating a thin corrugated and plain metal sheets and winding the metal sheets together around a center electrode. The outermost layer of the laminated assembly is connected to an outer electrode. The corrugated metal sheet has an insulating coating made of an alumina, and the plain metal sheet is uninsulated. Local conductive connections form between the thin metal sheets by soldering strips of zirconium solder foils between the layers of the thin metal sheets. Since zirconium has a larger reducing capability than aluminum, the alumina in the insulating coating is reduced by zirconium and precipitates at the local conductive connections. Therefore, the plain and corrugated metal sheet are electrically connected to each other at the local conductive connections. The solder foils in the respective layers are arranged in a configuration where a strip of solder foil in one layer overlaps with strips of solder foils in adjoining layers only at its ends, and does not overlap with strips of solder foils in the adjacent layers when viewed radially. Since the solder foils overlap only by a small area, electric current flowing through the local conductive connections concentrates in the overlap area and produces hot spots. The overall resistance of the electric paths can be adjusted by varying the solder strip length.
    • 本发明的电加热催化转化器包括形成为涡旋状圆柱形层压组件的催化剂基材。 该组件通过层叠薄的波纹状和平坦的金属片并将金属片绕在中心电极周围形成。 层叠组件的最外层与外部电极连接。 波纹金属片具有由氧化铝制成的绝缘涂层,并且平板金属片未绝缘。 通过在薄金属片的层之间焊接锆焊料箔片,在薄金属片之间形成局部导电连接。 由于锆具有比铝更大的还原能力,绝缘涂层中的氧化铝被锆还原,并在局部导电连接处沉淀。 因此,平坦且波纹状的金属片在局部导电连接处彼此电连接。 各层中的焊料箔布置成其中一层中的焊料箔条仅在其端部与相邻层中的焊料条带重叠的构造,并且在观察时不与相邻层中的焊料条带重叠 径向地 由于焊锡箔仅重叠小面积,流过局部导电连接的电流集中在重叠区域并产生热点。 可以通过改变焊料条长度来调整电路的整体电阻。