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    • 81. 发明授权
    • Article acquisition game apparatus
    • 文章采集游戏机
    • US07537217B2
    • 2009-05-26
    • US10581963
    • 2004-12-09
    • Mitsuharu FukazawaTakashi NakajimaNobuto KashiwagiJunichi Murakami
    • Mitsuharu FukazawaTakashi NakajimaNobuto KashiwagiJunichi Murakami
    • A63F9/30
    • A63F9/30A63F9/305
    • An article acquisition game apparatus includes a storage unit storing articles, and an article transferring unit enabling a player to hold the articles in the storage unit and transfer the articles to a predetermined transfer position when the player operates an operation input unit. The game apparatus comprises a distributing unit dividing the articles transferred to the transfer position into two or more groups, a first accumulation unit accumulating at least one group of the articles divided by the distributing unit, an article disbursement unit allowing the player to take out at least one group of the articles other than those accumulated by the first accumulation unit, an operating information generating unit generating operating information based on predetermined conditions, and an ejecting unit ejecting the articles accumulated by the first accumulation unit, to the article disbursement unit, based on the operating information.
    • 物品获取游戏装置包括存储物品的存储单元和使玩家能够将物品保持在存储单元中的物品传送单元,并且当玩家操作操作输入单元时将物品传送到预定的转移位置。 游戏装置包括:分配单元,将传送到转移位置的物品分成两组或更多组,第一累积单元,累积由分配单元划分的至少一组物品;物品支付单元,允许玩家取出 至少一组不同于第一累积单元累积的物品的组,基于预定条件产生运行信息的运行信息产生单元和将第一累积单元累积的物品弹出到物品支付单元的排出单元 关于操作信息。
    • 83. 发明授权
    • Method of manufacturing semiconductor device having conductive thin films
    • 制造具有导电薄膜的半导体器件的方法
    • US07442593B2
    • 2008-10-28
    • US11480912
    • 2006-07-06
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • H01L21/00H01L21/84
    • H01L21/28097H01L21/28035H01L21/28518H01L21/28525H01L21/32053H01L21/76838H01L21/76877H01L21/823437H01L23/485H01L23/53257H01L23/53271H01L28/40H01L29/4925H01L29/4975H01L2924/0002Y10T117/10Y10T117/1004H01L2924/00
    • In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
    • 在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时,例如,栅电极2被构成为多个多晶硅层6的叠层结构。 栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶(再结晶)的方法形成。 在这种情况下,非晶层的沉积被分开多次进行,使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度 在每个非晶层的沉积过程完成之后,非晶材料结晶,重复沉积非晶层的过程和结晶非晶材料的过程,由此多晶层6的层压结构具有必要的 获得膜厚度。 利用上述结构,可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生,层中的裂纹等,并且可以获得 通过多晶材料的层叠,具有所需膜厚度的小晶粒尺寸的多晶层。
    • 85. 发明授权
    • Method of manufacturing semiconductor device having conductive thin films
    • 制造具有导电薄膜的半导体器件的方法
    • US07091520B2
    • 2006-08-15
    • US10265105
    • 2002-10-07
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • H01L29/10
    • H01L21/28097H01L21/28035H01L21/28518H01L21/28525H01L21/32053H01L21/76838H01L21/76877H01L21/823437H01L23/485H01L23/53257H01L23/53271H01L28/40H01L29/4925H01L29/4975H01L2924/0002Y10T117/10Y10T117/1004H01L2924/00
    • In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
    • 在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时,例如,栅电极2被构成为多个多晶硅层6的叠层结构。 栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶(再结晶)的方法形成。 在这种情况下,非晶层的沉积被分开多次进行,使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度 在每个非晶层的沉积过程完成之后,非晶材料结晶,重复沉积非晶层的过程和结晶非晶材料的过程,由此多晶层6的层压结构具有必要的 获得膜厚度。 利用上述结构,可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生,层中的裂纹等,并且可以获得 通过多晶材料的层叠,具有所需膜厚度的小晶粒尺寸的多晶层。
    • 89. 发明授权
    • Semiconductor apparatus having conductive thin films
    • 具有导电薄膜的半导体装置
    • US06346731B1
    • 2002-02-12
    • US09499898
    • 2000-02-08
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • Takashi NakajimaHideo MiuraHiroyuki OhtaNoriaki Okamoto
    • H02L2976
    • H01L21/28097H01L21/28035H01L21/28518H01L21/28525H01L21/32053H01L21/76838H01L21/76877H01L21/823437H01L23/485H01L23/53257H01L23/53271H01L28/40H01L29/4925H01L29/4975H01L2924/0002Y10T117/10Y10T117/1004H01L2924/00
    • In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
    • 例如,通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时,栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分 通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶(再结晶)的方法形成电极2。 在这种情况下,非晶层的沉积被分开多次进行,使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度 在每个非晶层的沉积过程完成之后,非晶材料结晶,重复沉积非晶层的过程和结晶非晶材料的过程,由此多晶层6的层压结构具有必要的 获得膜厚度。 利用上述结构,可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生,层中的裂纹等,并且可以获得 通过多晶材料的层叠,具有所需膜厚度的小晶粒尺寸的多晶层。
    • 90. 发明授权
    • Sealed storage battery and modular system therefor
    • 密封蓄电池及其模块化系统
    • US06326103B1
    • 2001-12-04
    • US09274834
    • 1999-03-23
    • Isao IdoTakashi Nakajima
    • Isao IdoTakashi Nakajima
    • H01M642
    • H01M2/024B60K1/04H01M2/0245H01M2/1077H01M10/613H01M10/617H01M10/647H01M10/6556H01M10/6562H01M10/6566
    • The present invention provides a modular system for accommodating batteries therein, which has a simple structure and a high reliability and prevents a difference in properties between the batteries included therein. The modular system includes a plurality of single batteries 1, which are arranged side by side between the beams of a top plate 21 and a bottom plate 22 to locate covers of the batteries 1 with terminals on a front side of the top plate 21 and the bottom plate 22. The single battery 1 has a plurality of ribs 12 that are formed on a specific pair of opposite outer surfaces in such a manner as to extend in a longitudinal direction of the single battery 1, and have concaves formed at regular intervals. The plurality of ribs 12 formed on each outer surface of each single battery 1 are in contact and joined with the plurality of ribs 12 formed on a matching outer surface of an adjoining single battery 1. The joint surfaces of the adjacent single batteries 1 form connection grooves 13 that are defined by the concaves of the ribs 12 and extend perpendicularly to the top plate 21 and the bottom plate 22.
    • 本发明提供了一种用于在其中容纳电池的模块化系统,其具有简单的结构和高可靠性,并且防止其中包括的电池之间的性能差异。 模块化系统包括多个单电池1,它们并排布置在顶板21和底板22的梁之间,以将电池1的盖子定位在顶板21的前侧上的端子和 单电池1具有多个肋12,其形成在特定的一对相对的外表面上,以便在单个电池1的纵向方向上延伸,并且具有以规则间隔形成的凹部。 形成在每个单电池1的每个外表面上的多个肋12与形成在邻接的单个电池1的匹配外表面上的多个肋12接触并接合。相邻的单个电池1的接合表面形成连接 槽13由肋12的凹部限定并且垂直于顶板21和底板22延伸。