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81. 外观设计

USD320995S Hand grip for a video camera 失效
公开(公告)号：USD320995S
公开(公告)日：1991-10-22
申请号：US280223
申请日：1988-12-01
申请人： Hiroshi Fukuda , Masahiro Fukuda
设计人： Hiroshi Fukuda , Masahiro Fukuda

82. 外观设计

USD314967S Printer processor for making photographic prints 失效
公开(公告)号：USD314967S
公开(公告)日：1991-02-26
申请号：US169356
申请日：1988-03-17
申请人： Mikio Takahashi , Masahiro Fukuda
设计人： Mikio Takahashi , Masahiro Fukuda

83. 外观设计

USD313237S Combined video camera recorder with a still camera 失效
公开(公告)号：USD313237S
公开(公告)日：1990-12-25
申请号：US186468
申请日：1988-04-26
申请人： Hiroshi Fukuda , Masahiro Fukuda
设计人： Hiroshi Fukuda , Masahiro Fukuda

84. 发明授权

US4654132A Separation and purification of biomembrane proteins 失效
标题翻译：生物膜蛋白的分离和纯化
公开(公告)号：US4654132A
公开(公告)日：1987-03-31
申请号：US758247
申请日：1985-07-24
申请人： Toshio Takagi , Masahiro Fukuda , Kazuo Ohbu
发明人： Toshio Takagi , Masahiro Fukuda , Kazuo Ohbu
IPC分类号： C12P21/00 , A61K35/00 , A61K35/23 , A61K38/46 , B01D57/02 , C07K1/26 , C12N9/14 , C12P21/02 , G01N27/447 , C07K3/14
CPC分类号： C07K1/26 , C12N9/14 , C12P21/02 , G01N27/44747
摘要： A method for separating and purifying a biomembrane protein from biomembrane by subjecting the biomembrane to gel electrophoresis in the presence of at least one anionic surfactant having the general formula (I):RO--XO).sub.m (YO).sub.n SO.sub.3 M (I)wherein R represents an alkyl group having 6 to 22 carbon atoms or an alkylphenyl group having 6 to 22 carbon atoms, X and Y independently represent a hydrocarbon residue having 1 to 4 carbon atoms, m and n independently represent a number of from zero to 40 provided that m+n is 4 to 40, and M represents an alkali metal, an alkaline earth metal, an amine, or ammonium.Thus, the desired biomembrane protein can be separated and purified with a high purity without denaturing the protein and also without impairing the biological function thereof.
摘要翻译：一种通过在至少一种具有通式（I）的阴离子表面活性剂：RO-XO）m（YO）n SO 3 M（I）的存在下使生物膜进行凝胶电泳从生物膜中分离和纯化生物膜蛋白的方法，其中R表示具有6至22个碳原子的烷基或具有6至22个碳原子的烷基苯基，X和Y独立地表示具有1至4个碳原子的烃基，m和n独立地表示0至40的数，条件是m + n为4〜40，M为碱金属，碱土金属，胺或铵。因此，可以高纯度地分离和纯化所需的生物膜蛋白质，而不使蛋白质变性，并且也不损害其生物学功能。

85. 发明授权

US08941347B2 Converter control device and air conditioner including converter control device 有权
标题翻译：转换器控制装置和空调包括转换器控制装置
公开(公告)号：US08941347B2
公开(公告)日：2015-01-27
申请号：US13845286
申请日：2013-03-18
申请人： Yu Otorii , Katsuhiko Saito , Masahiro Fukuda
发明人： Yu Otorii , Katsuhiko Saito , Masahiro Fukuda
IPC分类号： H02P27/08 , F24F5/00 , H02M7/06
CPC分类号： H02M7/06 , H02M1/4225 , H02P27/08 , Y02B70/126
摘要： A converter control device comprises: a voltage-zero-cross detection unit detecting zero cross of the alternate-current voltage and outputting a voltage zero-cross signal; a power-source-current detection unit detecting a power source current of the alternate-current power source; a bus-line-voltage detection unit detecting a bus-line voltage between terminals of the smoothing capacitor; a PWM-signal generation unit generating a PWM-signal for on/off-controlling the switching unit, based on the power-source current, the bus-line voltage and a bus-line-voltage command value as a target voltage of the bus-line voltage; a power-source voltage-state detection unit detecting a signal state of the alternate-current voltage based on the voltage zero-cross signal; and a fundamental-switching-frequency selection unit selecting a fundamental switching frequency of the PWM-signal based on the signal state of the alternate-current voltage. The PWM-signal generation unit generates the PWM-signal based on a fundamental switching signal having a fundamental switching frequency selected by the fundamental-switching-frequency selection unit.
摘要翻译： A转换器控制装置包括：电压零交叉检测单元，检测交流电压的零交叉并输出电压零交叉信号; 电源电流检测单元，检测所述交流电源的电源电流; 总线电压检测单元，检测平滑电容器的端子之间的总线电压; PWM信号生成单元，基于电源电流，总线电压和总线电压指令值，作为总线的目标电压，生成用于开关单元的开/关控制的PWM信号线电压; 电源电压状态检测单元，其基于所述电压过零信号来检测所述交流电压的信号状态; 以及基极开关频率选择单元，其基于所述交流电压的信号状态来选择所述PWM信号的基本开关频率。 PWM信号生成单元基于由基频开关频率选择单元选择的基本开关频率的基波开关信号来生成PWM信号。

86. 发明授权

US08829976B2 Switching-element drive circuit 有权
标题翻译：开关元件驱动电路
公开(公告)号：US08829976B2
公开(公告)日：2014-09-09
申请号：US13779980
申请日：2013-02-28
申请人： Yasushi Kuwabara , Katsuhiko Saito , Masahiro Fukuda
发明人： Yasushi Kuwabara , Katsuhiko Saito , Masahiro Fukuda
IPC分类号： H03K17/56 , H03K17/16 , H02M1/08 , H02M1/44 , H02M1/42
CPC分类号： H03K17/56 , H02M1/08 , H02M1/4225 , H02M1/44 , H02M2001/0009 , H02M2001/0054 , H03K17/163 , H03K17/168 , Y02B70/126 , Y02B70/1491
摘要： A switching-element drive circuit that is configured to be applied to a power converter includes: a switching element; and a control unit that controls an operation of the switching element. The control unit includes a drive-voltage control unit that is configured to be capable of changing a switching speed of the switching element based on a power supply current.
摘要翻译：被配置为应用于功率转换器的开关元件驱动电路包括：开关元件; 以及控制单元，其控制所述开关元件的动作。控制单元包括驱动电压控制单元，其被配置为能够基于电源电流来改变开关元件的开关速度。

87. 发明授权

US08707307B2 Creating jobs by replacing execution attributes within job definition when a job activation request is received with execution attributes based on predetermined conditions being satisfied 有权
标题翻译：当基于满足预定条件的执行属性接收到具有执行属性的作业激活请求时，通过替换作业定义中的执行属性来创建作业
公开(公告)号：US08707307B2
公开(公告)日：2014-04-22
申请号：US12335261
申请日：2008-12-15
申请人： Masashi Kato , Masahiro Fukuda
发明人： Masashi Kato , Masahiro Fukuda
IPC分类号： G06F9/46 , G06F9/44
CPC分类号： G06F9/4843
摘要： When there is a job activation request accompanied with variable information in which an execution attribute and an identifier of a job are associated, a job definition in which an execution attribute is described with an arbitrary identifier is referred, and based on the variable information, an identifier within the job definition is replaced with the execution attribute to create a job. Then, the job created in this manner is activated.
摘要翻译：当存在伴随有其中执行属性和作业的标识符相关联的可变信息的作业激活请求时，参考其中以任意标识符描述执行属性的作业定义，并且基于可变信息，作业定义中的标识符被替换为执行属性以创建作业。然后，以这种方式创建的作业被激活。

88. 发明授权

US08455325B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US08455325B2
公开(公告)日：2013-06-04
申请号：US13347139
申请日：2012-01-10
申请人： Masahiro Fukuda , Yosuke Shimamune
发明人： Masahiro Fukuda , Yosuke Shimamune
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/66772 , H01L29/7833
摘要： A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and sidewalls of the first recess by wet etching, and forming a semiconductor layer in the second recess.

89. 发明授权

US08293622B2 Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method 有权
标题翻译：半导体器件制造方法，半导体器件和半导体层形成方法
公开(公告)号：US08293622B2
公开(公告)日：2012-10-23
申请号：US12120576
申请日：2008-05-14
申请人： Masahiro Fukuda , Yosuke Shimamune
发明人： Masahiro Fukuda , Yosuke Shimamune
IPC分类号： H01L21/20
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A semiconductor device fabrication method and a semiconductor layer formation method for making a semiconductor layer having excellent morphology selectively epitaxial-grow over a semiconductor, and a semiconductor device. When a recessed source/drain pMOSFET is fabricated, a gate electrode is formed over a Si substrate in which STIs are formed with a gate insulating film therebetween (step S1). After a side wall is formed (step S2), recesses are formed in portions of the Si substrate on both sides of the side wall (step S3). A SiGe layer including a lower layer portion and an upper layer portion is formed in the recesses of the Si substrate. The lower layer portion and the upper layer portion included in the SiGe layer are made to epitaxial-grow under a condition that growth selectivity of the lower layer portion with respect to the side wall and the STIs is lower than growth selectivity of the upper layer portion with respect to the side wall and the STIs (steps S4 and S5). As a result, the SiGe layer the growth selectivity of which with respect to the side wall and the like is secured and in which morphological deterioration is suppressed can be formed in the recesses of the Si substrate.
摘要翻译：一种半导体器件制造方法和半导体层形成方法，用于制造在半导体上选择性地外延生长的具有优异形态的半导体层。当制造凹陷源极/漏极pMOSFET时，在其上形成有栅绝缘膜的Si衬底上形成栅电极（步骤S1）。在形成侧壁（步骤S2）之后，在侧壁两侧的Si基板的部分形成凹部（步骤S3）。在Si衬底的凹部中形成包括下层部分和上层部分的SiGe层。在SiGe层中包含的下层部分和上层部分在下层部分相对于侧壁和STI的生长选择性低于上层部分的生长选择性的条件下进行外延生长相对于侧壁和STI（步骤S4和S5）。结果，可以确保SiGe层相对于侧壁等的生长选择性，并且可以在Si衬底的凹部中形成抑制形态劣化的SiGe层。

90. 发明申请

US20120121761A1 METHOD FOR PRODUCTION OF TEA EXTRACT 审中-公开
标题翻译：生产茶叶提取方法
公开(公告)号：US20120121761A1
公开(公告)日：2012-05-17
申请号：US12672302
申请日：2008-08-07
申请人： Masahiro Fukuda , Eri Itaya , Hirokazu Takahashi , Miwa Ogasawara , Hitoshi Sato , Kenichi Shikata , Keiji Shibata
发明人： Masahiro Fukuda , Eri Itaya , Hirokazu Takahashi , Miwa Ogasawara , Hitoshi Sato , Kenichi Shikata , Keiji Shibata
IPC分类号： A23F3/22 , A23F3/16
CPC分类号： A23F3/163 , A23F3/18 , A23F3/20
摘要： This invention relates to a process for producing a tea extract. The process includes subjecting a first tea extract solution, which has been obtained from tea, to solid-liquid separation so that a turbidity becomes 200 NTU or lower when a concentration of non-polymer catechins is adjusted to 1 wt %, thereby obtaining a second tea extract solution in which a concentration of (A) non-polymer catechins is from 0.2 to 5 wt % and a concentration of non-polymer catechins in solid content is from 15 to 80 wt %; and then subjecting the second tea extract solution to a heat treatment at a temperature of from 95 to 140° C. for an F value of from 0.05 to 40 min.
摘要翻译：本发明涉及茶提取物的制造方法。该方法包括使得从茶获得的第一茶提取物溶液进行固液分离，使得当非聚合型儿茶素类的浓度调节至1重量％时，浊度变为200NTU或更低，从而获得第二（A）非聚合型儿茶素类的浓度为0.2〜5重量％，固体成分中的非聚合物儿茶素类的浓度为15〜80重量％的茶提取液，然后在95〜140℃的温度下对第二茶提取液进行热处理，F值为0.05〜40分钟。

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