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    • 85. 发明授权
    • Imaging apparatus for taking images of objects in a plurality of directions and vehicle incorporating the same
    • 用于拍摄多个方向上的物体的图像的成像设备和包含该物体的车辆
    • US08115161B2
    • 2012-02-14
    • US12380234
    • 2009-02-24
    • Koichi Takahashi
    • Koichi Takahashi
    • H01J3/14H01J5/16
    • G02B5/04B60R11/04B60R2001/1253G03B17/00H04N5/2254H04N5/2259
    • The invention relates to an imaging apparatus that is capable of taking images of objects in at least three directions on a single imaging device, has a wide imaging angle of view and can easily be made compact, and a vehicle incorporating it. The imaging apparatus comprises a single imaging device 30 and at least three imaging optical systems 101, 102 and 103 that are located in juxtaposition to form on an imaging plane of the imaging device 30 at least three images in varying imaging directions. Of the three imaging optical systems 101, 102 and 103, at least two 101 and 102 reflect axial chief rays from objects in the right-and-left direction intersecting the direction of juxtaposition, and each have a curved reflecting surface of concave shape.
    • 本发明涉及一种成像装置,其能够在单个成像装置上拍摄至少三个方向上的物体的图像,具有宽的成像视角并且可以容易地制造得紧凑,并且包括它的车辆。 成像装置包括单个成像装置30和至少三个成像光学系统101,102和103,其至少三个成像光学系统101,102和103位于并置位置以在成像装置30的成像平面上形成至少三个成像方向的图像。 在三个成像光学系统101,102和103中,至少两个101和102反射来自与并列方向相交的左右方向的物体的轴向主射线,并且每个都具有凹形的弯曲反射表面。
    • 90. 发明授权
    • Vertical type semiconductor device
    • 垂直型半导体器件
    • US07391077B2
    • 2008-06-24
    • US10983658
    • 2004-11-09
    • Kenichi TokanoAtsuko YamashitaKoichi TakahashiHideki OkumuraShingo Sato
    • Kenichi TokanoAtsuko YamashitaKoichi TakahashiHideki OkumuraShingo Sato
    • H01L21/764
    • H01L29/7802H01L29/0634H01L29/0653H01L29/66712
    • Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.
    • 提供了一种半导体器件,其包括半导体衬底,该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层,其中第二半导体层包括 从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区, 第一杂质扩散区域,覆盖沟槽的侧壁的绝缘层,以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层,帽的材料 层几乎与半导体衬底的层相同。