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81. 发明申请

US20120267636A1 Lateral High Electron Mobility Transistor 有权
标题翻译：侧向高电子迁移率晶体管
公开(公告)号：US20120267636A1
公开(公告)日：2012-10-25
申请号：US13090350
申请日：2011-04-20
申请人： Markus Zundel , Franz Hirler
发明人： Markus Zundel , Franz Hirler
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/42316 , H01L29/7787 , H01L29/872
摘要： A lateral HEMT includes a substrate, a first semiconductor layer above the substrate and a second semiconductor layer on the first semiconductor layer. The lateral HEMT further includes a gate electrode, a source electrode, a drain electrode and a rectifying Schottky junction. A first terminal of the rectifying Schottky junction is electrically coupled to the source electrode and a second terminal of the rectifying Schottky junction is electrically coupled to the second semiconductor layer.
摘要翻译：横向HEMT包括衬底，在衬底上方的第一半导体层和第一半导体层上的第二半导体层。横向HEMT还包括栅电极，源电极，漏电极和整流肖特基结。整流肖特基结的第一端电耦合到源电极，并且整流肖特基结的第二端电耦合到第二半导体层。

82. 发明申请

US20120211891A1 Anchoring Structure and Intermeshing Structure 有权
标题翻译：锚定结构和啮合结构
公开(公告)号：US20120211891A1
公开(公告)日：2012-08-23
申请号：US13402394
申请日：2012-02-22
申请人： Erwin Vogl , Markus Zundel
发明人： Erwin Vogl , Markus Zundel
IPC分类号： H01L23/48
CPC分类号： H01L23/562 , H01L23/481 , H01L23/4824 , H01L29/04 , H01L29/0692 , H01L29/407 , H01L29/4236 , H01L29/42372 , H01L29/4238 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/00013 , H01L2924/0002 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure.
摘要翻译：用于半导体器件的金属结构的锚定结构包括具有至少一个悬垂侧壁的锚固凹槽结构，金属结构至少部分地布置在锚定凹槽结构内。

83. 发明授权

US08044460B2 Electronic device with connecting structure 有权
标题翻译：具有连接结构的电子设备
公开(公告)号：US08044460B2
公开(公告)日：2011-10-25
申请号：US11947552
申请日：2007-11-29
申请人： Franz Hirler , Markus Zundel
发明人： Franz Hirler , Markus Zundel
IPC分类号： H01L29/772
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41741 , H01L29/4238 , H01L29/7811 , H01L29/945
摘要： A connecting structure for an electronic device includes an edge region of the device, a first trench and a second trench running toward the edge region, a first electrode within the first trench, and a second electrode within the second trench, the first and second electrodes being arranged in a same electrode plane with regard to a main surface of a substrate of the electronic device within the trenches, and the first electrode extending, at an edge region side end of the first trench, farther toward the edge region than the second electrode extends, at an edge region side end of the second trench, toward the edge region.
摘要翻译：电子设备的连接结构包括器件的边缘区域，朝向边缘区域延伸的第一沟槽和第二沟槽，第一沟槽内的第一电极和第二沟槽内的第二电极，第一和第二电极相对于沟槽内的电子器件的基板的主表面而布置在相同的电极平面中，并且在第一沟槽的边缘区域侧端部延伸的第一电极比第二电极更向边缘区域延伸在第二沟槽的边缘区域侧端部延伸到边缘区域。

84. 发明申请

US20110163366A1 Semiconductor Component Arrangement Comprising a Trench Transistor 有权
公开(公告)号：US20110163366A1
公开(公告)日：2011-07-07
申请号：US12987852
申请日：2011-01-10
申请人： Markus Zundel , Franz Hirler , Norbert Krischke
发明人： Markus Zundel , Franz Hirler , Norbert Krischke
IPC分类号： H01L27/06
CPC分类号： H01L27/0733 , H01L21/02233 , H01L21/02255 , H01L21/32105 , H01L21/743 , H01L21/823437 , H01L27/0629 , H01L28/40 , H01L28/60 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L29/7816 , H01L29/7823 , H01L29/7825 , H01L29/945
摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.

85. 发明授权

US07875560B2 Semiconductor having optimized insulation structure and process for producing the semiconductor 有权
标题翻译：半导体具有优化的绝缘结构和制造半导体的工艺
公开(公告)号：US07875560B2
公开(公告)日：2011-01-25
申请号：US11392363
申请日：2006-03-29
申请人： Markus Zundel , Norbert Krischke
发明人： Markus Zundel , Norbert Krischke
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76243 , H01L29/42384 , H01L29/66787 , H01L29/78696
摘要： A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.
摘要翻译：公开了具有优化的绝缘结构的半导体，该绝缘结构简单且便宜并且可以制造成小于LOCOS绝缘结构。在半导体衬底的表面上的注入掩模用于将元件注入到半导体衬底中，这些元件在热激活时与半导体衬底的其它元件一起形成绝缘区域。热激活通过激光照射来实现，在此期间半导体衬底被短暂熔化，然后在随后的冷却期间再结晶，使得注入的元件与半导体衬底的其它元件一起形成绝缘区域。

86. 发明授权

US07868363B2 Semiconductor component arrangement comprising a trench transistor 有权
标题翻译：半导体元件布置包括沟槽晶体管
公开(公告)号：US07868363B2
公开(公告)日：2011-01-11
申请号：US11715275
申请日：2007-03-07
申请人： Markus Zundel , Franz Hirler , Norbert Krischke
发明人： Markus Zundel , Franz Hirler , Norbert Krischke
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L21/743 , H01L27/0733 , H01L28/40 , H01L29/0696 , H01L29/407 , H01L29/41766 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7809 , H01L29/7813 , H01L29/945
摘要： Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.
摘要翻译：公开了一种用于制造半导体元件布置的半导体元件布置和方法。该方法包括产生沟槽晶体管结构，其中至少一个沟槽设置在半导体本体中，并且至少一个栅电极设置在该至少一个沟槽中。电极结构设置在至少一个另外的沟槽中，并且包括至少一个电极。晶体管结构的至少一个沟槽和至少一个另外的沟槽通过公共工艺步骤产生。此外，电极结构的至少一个电极和栅电极通过常规的工艺步骤制造。

87. 发明授权

US07867879B2 Method for dividing a semiconductor substrate and a method for producing a semiconductor circuit arrangement 有权
标题翻译：用于分割半导体衬底的方法和用于制造半导体电路装置的方法
公开(公告)号：US07867879B2
公开(公告)日：2011-01-11
申请号：US12188232
申请日：2008-08-08
申请人： Hans Weber , Markus Zundel
发明人： Hans Weber , Markus Zundel
IPC分类号： H01L21/304
CPC分类号： H01L21/78
摘要： A method for dividing a semiconductor substrate involves providing a semiconductor substrate. At least one separating trench is produced at a front side of the semiconductor substrate. A layer is produced at least at the bottom of the at least one separating trench. The semiconductor substrate is thinned at a rear side of the semiconductor substrate at least as far as the layer at the bottom of the at least one separating trench. The layer is severed in order to divide the semiconductor substrate into individual pieces.
摘要翻译：用于分割半导体衬底的方法包括提供半导体衬底。在半导体衬底的前侧产生至少一个分离沟槽。至少在至少一个分离槽的底部产生一层。半导体衬底在半导体衬底的后侧至少与至少一个分离沟槽的底部的层一样薄化。为了将半导体衬底分成单独的部分，该层被切断。

88. 发明授权

US07863680B2 Semiconductor component and method for producing it 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07863680B2
公开(公告)日：2011-01-04
申请号：US12167437
申请日：2008-07-03
申请人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
发明人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0847 , H01L29/0878 , H01L29/42368 , H01L29/7811
摘要： A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
摘要翻译：半导体部件包括表面区域。在单元阵列的边缘区域中提供修改的掺杂区域。在表面区域或改性掺杂区域中，掺杂浓度降低和/或在表面区域或修饰掺杂区域中形成导电类型，使其与实际半导体材料区域的导电类型相反，或者其中场板区域。

89. 发明授权

US07843006B2 Semiconductor component arrangement having a power transistor and a temperature measuring arrangement 有权
标题翻译：具有功率晶体管和温度测量装置的半导体元件布置
公开(公告)号：US07843006B2
公开(公告)日：2010-11-30
申请号：US11701248
申请日：2007-02-01
申请人： Rainald Sander , Markus Zundel
发明人： Rainald Sander , Markus Zundel
IPC分类号： H01L27/12
CPC分类号： H01L29/7813 , G01K3/005 , G01K7/226 , H01L29/0696 , H01L29/7803 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component arrangement includes a power transistor and a temperature measurement circuit. The power transistor includes a gate electrode, a source zone, a drain zone and a body zone. The body zone is arranged in a first semiconductor zone of a first conduction type. The temperature measuring circuit comprises a temperature-dependent resistor and an evaluation circuit coupled to the temperature-dependent resistor. The resistor is formed by a portion of said first semiconductor zone.
摘要翻译：半导体元件布置包括功率晶体管和温度测量电路。功率晶体管包括栅电极，源极区，漏区和体区。身体区域布置在第一导电类型的第一半导体区域中。温度测量电路包括温度依赖电阻器和耦合到温度依赖电阻器的评估电路。电阻器由所述第一半导体区域的一部分形成。

90. 发明申请

US20100270620A1 System and Method for Constructing Shielded Seebeck Temperature Difference Sensor 有权
标题翻译：用于构建屏蔽塞贝克温差传感器的系统和方法
公开(公告)号：US20100270620A1
公开(公告)日：2010-10-28
申请号：US12431504
申请日：2009-04-28
申请人： Donald Dibra , Christoph Kadow , Markus Zundel
发明人： Donald Dibra , Christoph Kadow , Markus Zundel
IPC分类号： H01L35/28 , H01L35/34
CPC分类号： H01L35/32 , G01K1/08 , G01K7/02
摘要： An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor.
摘要翻译：本发明的实施例涉及可以形成在半导体器件上的沟槽中的塞贝克温差传感器。传感器的一部分可以被导电屏蔽件基本上包围。可以包括多个结以提供更高的塞贝克传感器电压。屏蔽可以电耦合到局部电位，或者电耦合到电浮置。屏蔽的一部分可以形成为半导体器件形成的半导体衬底中的掺杂阱，或者形成为基本覆盖传感器的金属层。屏蔽件可以形成为在传感器沟槽壁上的第一氧化物层，其中形成在第一氧化物层上的导电屏蔽层和形成在导电屏蔽上的第二氧化物层。绝对温度传感器可以与塞贝克温差传感器串联耦合。

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