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    • 81. 发明申请
    • Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
    • 具有构造为多光束激光二极管的单片集成激光二极管芯片
    • US20090122823A1
    • 2009-05-14
    • US12217100
    • 2008-06-30
    • Martin MullerGunther GronningerAlexander Behres
    • Martin MullerGunther GronningerAlexander Behres
    • H01S5/026H01S5/323
    • H01S5/4043H01S5/3095H01S5/3201H01S5/3211H01S5/3215H01S5/4018
    • A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.
    • 具有构造为多光束激光二极管的单片集成激光二极管芯片,其在由GaAs构成的半导体衬底(3)上具有至少两个激光堆叠(4a,4b,4c) 每个都包含活动区域(7)。 有源区(7)分别布置在波导层(8)之间。 每个波导层(8)在远离有源区的一侧与包层(6)相邻。 至少一个激光堆叠(4a,4b,4c)的至少一个波导层(8)或覆层(6)包括Al x Ga 1-x As,其中0≤x≤1,以及至少一种附加材料 来自主组III或V,使得包括至少一个附加元件的至少一个波导层(8)或包层(6)与由GaAs构成的半导体衬底(3)之间的晶格失配减小。 这增加了激光二极管芯片的寿命。
    • 83. 发明申请
    • Functionalized nanoparticles
    • 官能化纳米粒子
    • US20090099282A1
    • 2009-04-16
    • US11920295
    • 2006-05-17
    • Martin MullerAndreas MuhlebachThomas GiesenbergDidier BauerThomas RuchFrancois RimeLeonhard FeilerRoman LenzLaurent Michau
    • Martin MullerAndreas MuhlebachThomas GiesenbergDidier BauerThomas RuchFrancois RimeLeonhard FeilerRoman LenzLaurent Michau
    • C08K5/5419C04B16/00C08K5/00
    • C09B69/103C09B67/0097C09B68/20C09B68/443C09B69/10
    • The present invention discloses functionalized nanoparticles comprising on the surface a covalently bound radical of formula (1), wherein the nanoparticles are SiO2, Al2O3 or mixed SiO2 and Al2O3 nanoparticles, R1 and R2 are independently of each other hydrogen, nanoparticle surface-O—, or a substituent, n is 1, 2, 3, 4, 5, 6, 7 or 8, and Y is a radical of formula —B1-D1 (2a), wherein B1 is the direct bond or a bridge member, and D1 is a radical of a cationic dye, a radical of a phthalocyanine dye which carries no water-solubilizing group, or a radical of a fluorescent dye selected from the group consisting of coumarins, benzocoumarins, xanthenes, benzo[a]xanthenes, benzo[b]xanthenes, benzo[c]xanthenes, phenoxazines, benzo[a]phenoxazines, benzo[b]phenoxazines, benzo[c]phenoxazines, napthalimides, naphtholactams, azlactones, methines, oxazines, thiazines, diketopyrrolopyrroles, quinacridones, benzoxanthenes, thio-epindolines, lactamimides, diphenylmaleimides, acetoacetamides, imidazothiazines, benzanthrones, phthalimides, benzotriazoles, pyrimidines, pyrazines and triazines, or Y is a radical of formula —B2D2 (2b), wherein B2 is an organic radical comprising at least one group having a negative charge, and D2 is a cationic dye selected from the group consisting of monoazo, disazo, polyazo, methine, azamethine, diphenylmethane, triphenylmethane, triaminotriaryl methane, azine, oxazine, cyanine and anthraquinone dyes.
    • 本发明公开了在表面上包含式(1)的共价结合基团的官能化纳米颗粒,其中纳米颗粒是SiO 2,Al 2 O 3或混合的SiO 2和Al 2 O 3纳米颗粒,R 1和R 2彼此独立地是氢,纳米颗粒表面-O-, 或取代基,n为1,2,3,4,5,6,7或8,并且Y为式-B1-D1(2a)的基团,其中B1为直接键或桥式构件,D1为 是阳离子染料的自由基,不含水溶性基团的酞菁染料的基团,或选自香豆素,苯并香豆素,呫吨,苯并[a]呫吨,苯并[b 苯并[c]呫吨酮,苯并[c]呫吨酮,吩恶嗪,苯并[a]吩恶嗪,苯并[b]吩恶嗪,苯并[c]吩恶嗪,萘酰亚胺,萘并内酰胺,吖内酯,次甲基,恶嗪,噻嗪,二酮吡咯并吡咯,喹吖啶酮,苯并恶庚烯,硫代 - ,内酰胺,二苯基马来酰亚胺,乙酰乙酰胺,咪唑硫基 吖嗪,苯并呋喃,邻苯二甲酰亚胺,苯并三唑,嘧啶,吡嗪和三嗪,或Y是式-B2D2(2b)的基团,其中B2是包含至少一个具有负电荷的基团的有机基团,并且D2是选择的阳离子染料 来自由单偶氮,双偶氮,多偶氮,次甲基,氮杂酮,二苯基甲烷,三苯甲烷,三氨基三芳基甲烷,吖嗪,恶嗪,花青和蒽醌染料组成的组。
    • 87. 发明申请
    • Measuring arrangement and measuring system
    • 测量装置和测量系统
    • US20080197289A1
    • 2008-08-21
    • US12011427
    • 2008-01-25
    • Martin Muller
    • Martin Muller
    • G01T1/24
    • G01S17/10G01S7/4814G01S7/4818G01S17/58G01S17/87G01S17/936H01S5/005H01S5/0071H01S5/026H01S5/1021H01S5/18383H01S5/18397H01S5/3095H01S5/423
    • A measuring arrangement comprises a radiation device (SE), having at least one first surface emitting semiconductor component (1) with a vertical emission direction, a detection device (DE) for detecting reflected radiation, and an evaluation circuit (AS), set up for controlling the radiation device (SE) and the detection device (DE) and for processing a detection result of the detection device (DE). The semiconductor component (1) comprises a semiconductor body (2) with a plurality of active regions (4a, 4b) suitable for generating radiation and arranged at a distance from one another in a vertical direction. In this case, a tunnel junction (5) is monolithically integrated in the semiconductor body (2) between two active regions (4a, 4b) and the two active regions (4a, 4b) are electrically conductively connected by means of the tunnel junction during operation of the semiconductor component (1).
    • 测量装置包括具有至少一个具有垂直发射方向的第一表面发射半导体部件(1)的辐射装置(SE),用于检测反射辐射的检测装置(DE),以及评估电路(AS) 用于控制辐射装置(SE)和检测装置(DE)并用于处理检测装置(DE)的检测结果。 半导体部件(1)包括半导体本体(2),其具有适于产生辐射的多个有源区域(4a,4b),并且在垂直方向上彼此间隔开设置。 在这种情况下,隧道结(5)在两个有源区(4a,4b)之间的半导体本体(2)中单片集成,并且两个有源区(4a,4b)通过以下方式导电连接: 在半导体部件(1)的操作期间的隧道结。