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81. 发明授权

US07473623B2 Providing stress uniformity in a semiconductor device 有权
标题翻译：在半导体器件中提供应力均匀性
公开(公告)号：US07473623B2
公开(公告)日：2009-01-06
申请号：US11428022
申请日：2006-06-30
申请人： Jian Chen , Mark W. Michael
发明人： Jian Chen , Mark W. Michael
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/823418 , H01L21/823814 , H01L29/7843 , H01L29/7848
摘要： A method includes forming a plurality of functional features on a semiconductor layer in a first region. A non-functional feature corresponding to the functional feature is formed adjacent at least one of the functional features disposed on a periphery of the region. A stress-inducing layer is formed over at least a portion of the functional features and the non-functional feature. A device includes a semiconductor layer, a first dummy gate electrode, and a stress-inducing layer. The plurality of transistor gate electrodes is formed above the semiconductor layer. The plurality includes at least a first end gate electrode, a second end gate electrode, and at least one interior gate electrode. The first dummy gate electrode is disposed proximate the first end gate electrode. The stress-inducing layer is disposed over at least a portion of the plurality of transistor gate electrodes and the first dummy gate electrode.
摘要翻译：一种方法包括在第一区域中的半导体层上形成多个功能特征。相邻于功能特征的非功能特征形成在邻近设置在区域周边的功能特征中的至少一个功能特征。在功能特征和非功能特征的至少一部分上形成应力诱导层。一种器件包括半导体层，第一伪栅电极和应力诱导层。多个晶体管栅电极形成在半导体层的上方。多个至少包括第一端栅极电极，第二端栅极电极和至少一个内部栅极电极。第一虚拟栅电极设置在第一端栅电极附近。应力感应层设置在多个晶体管栅极电极和第一虚拟栅电极的至少一部分上。

82. 发明申请

US20080318257A1 Polynucelotides encoding novel variants of the TRP channel family member, LTRPC3 有权
公开(公告)号：US20080318257A1
公开(公告)日：2008-12-25
申请号：US12220155
申请日：2008-07-22
申请人： Ning Lee , Jian Chen , John N. Feder , Shujian Wu , Michael A. Blanar , David K. Bol , Paul C. Levesque , Lucy Sun
发明人： Ning Lee , Jian Chen , John N. Feder , Shujian Wu , Michael A. Blanar , David K. Bol , Paul C. Levesque , Lucy Sun
IPC分类号： G01N33/53 , C07K16/18 , C12N5/06 , G01N33/566
CPC分类号： C07K14/705 , C07H21/04 , C07K16/28 , C07K2317/21 , C07K2317/56 , C07K2317/622
摘要： The present invention provides novel polynucleotides encoding LTRPC3g, LTRPC3h, LTRPC3i, LTRPC3j, LTRPC3k, or LTRPC3l polypeptides, fragments and homologues thereof. Also provided are vectors, host cells, antibodies, and recombinant and synthetic methods for producing said polypeptides. The invention further relates to diagnostic and therapeutic methods for applying these novel LTRPC3g, LTRPC3h, LTRPC3i, LTRPC3j, LTRPC3k, or LTRPC3l polypeptides to the diagnosis, treatment, and/or prevention of various diseases and/or disorders related to these polypeptides. The invention further relates to screening methods for identifying agonists and antagonists of the polynucleotides and polypeptides of the present invention.

83. 发明申请

US20080274505A1 Polynucleotide encoding a novel TRP channel family member, LTRPC3, and splice variants thereof 有权
标题翻译：编码新型TRP通道家族成员的多核苷酸，LTRPC3及其剪接变体
公开(公告)号：US20080274505A1
公开(公告)日：2008-11-06
申请号：US12152547
申请日：2008-05-15
申请人： Ning Lee , Jian Chen , John N. Feder , Shujian Wu , Liana M. Lee , Michael A. Blanar , David Bol , Paul C. Lavesque , Lucy Sun
发明人： Ning Lee , Jian Chen , John N. Feder , Shujian Wu , Liana M. Lee , Michael A. Blanar , David Bol , Paul C. Lavesque , Lucy Sun
IPC分类号： C12N15/12 , C12N15/63 , C12P21/00 , C12N5/10
CPC分类号： C07K14/705 , A61K38/00 , C07K2319/00
摘要： The present invention provides novel polynucleotides encoding LTRPC3 polypeptides, fragments and homologues thereof. The present invention also provides polynucleotides encoding variants and splice variants of LTRPC3 polypeptides, LTRPC3b, LTRPC3c, LTRPC3d, LTRPC3e, and LTRPC3f, respectively. Also provided are vectors, host cells, antibodies, and recombinant and synthetic methods for producing said polypeptides. The invention further relates to diagnostic and therapeutic methods for applying these novel LTRPC3, LTRPC3b, LTRPC3c, LTRPC3d, LTRPC3e, and LTRPC3f polypeptides to the diagnosis, treatment, and/or prevention of various diseases and/or disorders related to these polypeptides. The invention further relates to screening methods for identifying agonists and antagonists of the polynucleotides and polypeptides of the present invention.
摘要翻译：本发明提供了编码LTRPC3多肽的新型多核苷酸，其片段及其同源物。本发明还提供了分别编码LTRPC3多肽，LTRPC3b，LTRPC3c，LTRPC3d，LTRPC3e和LTRPC3f的变体和剪接变体的多核苷酸。还提供了载体，宿主细胞，抗体以及用于产生所述多肽的重组和合成方法。本发明还涉及将这些新型LTRPC3，LTRPC3b，LTRPC3c，LTRPC3d，LTRPC3e和LTRPC3f多肽应用于诊断，治疗和/或预防与这些多肽相关的各种疾病和/或病症的诊断和治疗方法。本发明还涉及用于鉴定本发明的多核苷酸和多肽的激动剂和拮抗剂的筛选方法。

84. 发明申请

US20080170974A1 MICROWAVE SEWAGE TREATING APPARATUS 审中-公开
标题翻译：微波炉污水处理设备
公开(公告)号：US20080170974A1
公开(公告)日：2008-07-17
申请号：US12014753
申请日：2008-01-15
申请人： Jian Chen
发明人： Jian Chen
IPC分类号： B01J19/08
CPC分类号： C02F1/302 , C02F2303/24
摘要： A microwave sewage treating apparatus is disclosed. The apparatus comprises: a sewage source for supplying sewage; a microwave radiation system for irradiating the sewage with microwave, the microwave radiation system including a microwave generator for generating microwave, a microwave radiation chamber in which the sewage is irradiated with the microwave generated by the microwave generator, and a microwave radiation part for inputting the microwave generated by the microwave generator into the microwave radiation chamber; and a sewage pipe disposed in the microwave radiation chamber and having one end connected with the sewage source and the other end for outputting the sewage irradiated with the microwave. The microwave sewage treating apparatus according to the present disclosure is high in sewage treatment and low in operational cost and can treat various sewages. Indexes of water outputted by treating the sewage with the microwave sewage treating apparatus can completely reach discharge standards.
摘要翻译：公开了一种微波污水处理装置。该设备包括：用于供应污水的污水源; 用微波照射污水的微波辐射系统，微波辐射系统包括微波发生器，用于产生微波;微波辐射室，其中污水用微波发生器产生的微波照射;微波辐射部分，用于输入微波辐射部分，由微波发生器产生的微波进入微波辐射室; 以及设置在微波辐射室中的污水管，其一端与污水源连接，另一端用于输出用微波照射的污水。根据本公开的微波污水处理装置，污水处理量高，运行成本低，可以处理各种污水。用微波污水处理设备处理污水输出的水指标可以完全达到排放标准。

85. 发明申请

US20080160021A1 IL-17 HOMOLOGOUS POLYPEPTIDES AND THERAPEUTIC USES THEREOF 审中-公开
标题翻译： IL-17同种异体多肽及其治疗用途
公开(公告)号：US20080160021A1
公开(公告)日：2008-07-03
申请号：US11949633
申请日：2007-12-03
申请人： Jian Chen , Ellen Filvaroff , Sherman Fong , Dorothy French , Audrey Goddard , Paul J. Godowski , J. Christopher Grimaldi , Austin L. Gurney , Kenneth J. Hillan , Sarah G. Hymowitz , Hanzhong Li , James Pan , Melissa A. Starovasnik , Daniel Tumas , Menno Van Lookeren , Richard Vandlen , Colin K. Watanabe , P. Mickey Williams , William J. Wood , Daniel G. Yansura
发明人： Jian Chen , Ellen Filvaroff , Sherman Fong , Dorothy French , Audrey Goddard , Paul J. Godowski , J. Christopher Grimaldi , Austin L. Gurney , Kenneth J. Hillan , Sarah G. Hymowitz , Hanzhong Li , James Pan , Melissa A. Starovasnik , Daniel Tumas , Menno Van Lookeren , Richard Vandlen , Colin K. Watanabe , P. Mickey Williams , William J. Wood , Daniel G. Yansura
IPC分类号： A61K39/395 , A61P19/02
CPC分类号： C07K16/244 , A61K38/00 , C07H21/04 , C07K14/54 , C07K14/7155 , C07K2317/21 , C07K2317/24 , C07K2317/35 , C07K2317/54 , C07K2317/55 , C07K2317/62 , G01N33/505 , G01N33/564 , G01N33/574 , G01N33/57407 , G01N33/57423 , G01N33/57438 , G01N33/57492 , G01N2333/54 , G01N2333/7155
摘要： The present invention is directed to novel polypeptides having sequence identity with IL-17, IL-17 receptors and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Further provided herein are methods for treating degenerative cartilaginous disorders and other inflammatory diseases.
摘要翻译：本发明涉及与IL-17，IL-17受体和编码那些多肽的核酸分子具有序列同一性的新型多肽。本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子，与本发明的多肽结合的抗体以及本发明的多肽的制备方法发明。本文还提供了治疗退行性软骨疾病和其它炎性疾病的方法。

86. 发明申请

US20080150009A1 Electron Blocking Layers for Electronic Devices 审中-公开
标题翻译：电子设备电子阻挡层
公开(公告)号：US20080150009A1
公开(公告)日：2008-06-26
申请号：US11743085
申请日：2007-05-01
申请人： Jian Chen
发明人： Jian Chen
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/513 , B82Y10/00 , G11C11/5621 , G11C16/10 , H01L29/40114 , H01L29/40117 , H01L29/42332 , H01L29/42348 , H01L29/517
摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2), and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g., two, three or four bit) operation.
摘要翻译：描述诸如非易失性存储器件的电子设备的方法和装置。存储器件包括多层控制电介质，例如双层或三层。多层控制电介质包括高k电介质材料的组合，例如氧化铝（Al 2 O 3 O 3），氧化铪（HfO 2 O 3） SUB>）和/或铪铝氧化物的混合膜。多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器编程/擦除窗口，改进的可靠性和稳定性，具有单或多（例如二，三或四位）操作的可行性。

87. 发明申请

US20080150003A1 Electron blocking layers for electronic devices 审中-公开
标题翻译：电子器件用电子阻挡层
公开(公告)号：US20080150003A1
公开(公告)日：2008-06-26
申请号：US11641956
申请日：2006-12-20
申请人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
发明人： Jian Chen , Xiangfeng Duan , Karen Cruden , Chao Liu , Madhuri L. Nallabolu , Srikanth Ranganathan , Francisco Leon , J. Wallace Parce
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L29/42324 , H01L29/42332 , H01L29/517
摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide (Al2O3), hafnium oxide (HfO2), and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g., two, three or four bit) operation.
摘要翻译：描述诸如非易失性存储器件的电子设备的方法和装置。存储器件包括多层控制电介质，例如双层或三层。多层控制电介质包括高k电介质材料如氧化铝（Al 2 O 3），氧化铪（HfO 2）和/或铪铝氧化物的混合膜的组合。多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器编程/擦除窗口，改进的可靠性和稳定性，具有单或多（例如二，三或四位）操作的可行性。

88. 发明申请

US20080118755A1 Compositions and methods for modulation of nanostructure energy levels 有权
标题翻译：用于调制纳米结构能级的组成和方法
公开(公告)号：US20080118755A1
公开(公告)日：2008-05-22
申请号：US11299299
申请日：2005-12-09
申请人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： B05D5/12 , C07F5/025 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).
摘要翻译：提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。还提供了用于纳米结构上沉积后壳形成，用于可逆修饰纳米结构和用于操纵纳米结构的电子性质的方法。本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以改进纳米结构的量子限制和/或减少的串扰。本发明的配体还可用于操纵纳米结构组合物的电子性质（例如，通过调节能级，产生内部偏置场，减少电荷转移或泄漏等）。

89. 发明授权

US07372730B2 Method of reading NAND memory to compensate for coupling between storage elements 有权
标题翻译：读取NAND存储器以补偿存储元件之间的耦合的方法
公开(公告)号：US07372730B2
公开(公告)日：2008-05-13
申请号：US10765693
申请日：2004-01-26
申请人： Jian Chen
发明人： Jian Chen
IPC分类号： G11C16/04
CPC分类号： G11C16/3422 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3418 , H01L27/115
摘要： A method for reading a non-volatile memory arranged in columns and rows which reduces adjacent cell coupling, sometimes referred to as the Yupin effect. The method includes the steps of: selecting a bit to be read in a word-line; reading an adjacent word line written after the word line; and reading the selected bit in the word line by selectively adjusting at least one read parameter. In one embodiment, the read parameter is the sense voltage. In another embodiment, the read parameter is the pre-charge voltage. In yet another embodiment, both the sense and the pre-charge voltage are adjusted.
摘要翻译：一种用于读取排列成列和行的非易失性存储器的方法，其减少相邻的单元耦合，有时称为Yupin效应。该方法包括以下步骤：选择要在字线中读取的位; 读取字线后面写的相邻字线; 并且通过选择性地调整至少一个读取参数来读取字线中的所选择的位。在一个实施例中，读取参数是感测电压。在另一个实施例中，读取参数是预充电电压。在另一个实施例中，调整感测电压和预充电电压。

90. 发明授权

US07301816B2 Read operation for non-volatile storage that includes compensation for coupling 有权
标题翻译：非易失性存储的读操作，包括耦合补偿
公开(公告)号：US07301816B2
公开(公告)日：2007-11-27
申请号：US11616762
申请日：2006-12-27
申请人： Yan Li , Jian Chen
发明人： Yan Li , Jian Chen
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3418 , G11C16/3422
摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
摘要翻译：存在于非易失性存储单元的浮动栅极（或其他电荷存储元件）上的表观电荷的变化可能发生，因为基于存储在相邻浮动栅极（或其它相邻电荷存储元件）中的电荷的电场的耦合）。在不同时间编程的相邻存储器单元组之间最明显地出现该问题。为了补偿该耦合，给定存储器单元的读取过程将考虑相邻存储器单元的编程状态。

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