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81. 发明申请

US20140166205A1 PROCESS MONITORING DEVICE FOR USE IN SUBSTRATE PROCESS APPARATUS, PROCESS MONITORING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于基板工艺装置的工艺监测装置，工艺监测方法和基板处理装置
公开(公告)号：US20140166205A1
公开(公告)日：2014-06-19
申请号：US14111030
申请日：2012-04-06
申请人： Caizhong Tian , Toshihisa Nozawa , Kazuki Moyama , Takahiro Senda , Kazuyuki Kato , Munetaka Yamagami
发明人： Caizhong Tian , Toshihisa Nozawa , Kazuki Moyama , Takahiro Senda , Kazuyuki Kato , Munetaka Yamagami
IPC分类号： G01B11/24 , H01J37/32
CPC分类号： G01B11/24 , G01B11/02 , G01B11/06 , G01N21/9501 , H01J37/32009 , H01L21/67253 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.
摘要翻译：处理监视装置11包括输出光的光源单元; 光检测单元，其检测光的强度; 第一光路21，其将从光源单元输出的光引导到晶片W，并将来自晶片W的反射光引导到光检测单元; 具有与第一光路21的光传播特性相当的光传播特性的第二光路，并将从光源单元输出的光引导到光检测单元，而不允许光通过晶片W; 以及控制器17，其通过第一光路21基于由光检测单元检测出的光的强度信息经由第二光路校正由光检测单元检测到的光的强度信息，并分析晶片W的结构。

82. 发明申请

US20130180660A1 PLASMA TREATMENT DEVICE AND OPTICAL MONITOR DEVICE 有权
标题翻译：等离子体处理装置和光学监测装置
公开(公告)号：US20130180660A1
公开(公告)日：2013-07-18
申请号：US13818720
申请日：2011-08-24
申请人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
发明人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
IPC分类号： G01N21/55
CPC分类号： G01N21/55 , H01J37/32192 , H01J37/32972 , H01L21/31116 , H01L22/12 , H01L22/26 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna.[Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.
摘要翻译： [问题]使用具有宽波长范围的非相干监视光，在处理容器内进行待处理基板的表面的高精度光学监视，而不影响来自平面缝隙天线的电磁辐射的均匀性。本解决方案本微波等离子体蚀刻装置的光学监测装置100具有：监视器头102，其位于比安装在基座12上的半导体晶片W的边缘更径向向内的位置，比同轴管66更径向向外和盖板72上方; 用于监控的光波导104，其垂直地设置在监视器头102的下方，并纵向穿过冷却板72，电介质板54和电介质窗口52; 以及经由光纤106与监视器头102光学连接的监视器主体。

83. 发明授权

US08383519B2 Etching method and recording medium 有权
标题翻译：蚀刻方法和记录介质
公开(公告)号：US08383519B2
公开(公告)日：2013-02-26
申请号：US12526471
申请日：2008-02-05
申请人： Toshihisa Nozawa , Kotaro Miyatani , Toshiyasu Hori , Shigekazu Hirose
发明人： Toshihisa Nozawa , Kotaro Miyatani , Toshiyasu Hori , Shigekazu Hirose
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L23/53238 , H01J37/32091 , H01L21/02063 , H01L21/02307 , H01L21/0273 , H01L21/3105 , H01L21/31116 , H01L21/31122 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/76814 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
摘要翻译：通过等离子体蚀刻形成在基板上的添加氟的碳膜的蚀刻方法包括：利用含氧处理气体的等离子体蚀刻含氟碳膜的第一步骤，以及蚀刻氟 - 添加碳膜与含氟处理气体的等离子体。

84. 发明授权

US08091863B2 Gate valve and semiconductor manufacturing apparatus 有权
标题翻译：闸阀和半导体制造装置
公开(公告)号：US08091863B2
公开(公告)日：2012-01-10
申请号：US12401076
申请日：2009-03-10
申请人： Shinji Komoto , Toshihisa Nozawa
发明人： Shinji Komoto , Toshihisa Nozawa
IPC分类号： F16K1/16
CPC分类号： H01L21/67126 , Y10S251/90 , Y10S414/135
摘要： A gate valve of a semiconductor manufacturing apparatus, which is formed between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, includes a gate valve at a side of the processing chamber; a sealing member which is formed in the gate valve at the side of the processing chamber; a gate valve at the side of the transfer chamber; a sealing member which is formed in the gate valve at the side of the transfer chamber; and a thermal insulator which is formed between the gate valve at the side of the processing chamber and the gate valve at the side of the transfer chamber.
摘要翻译：半导体制造装置的闸阀形成在执行处理的处理室和承载执行了处理的基板的传送室之间，包括处理室侧的闸阀; 密封构件，其形成在处理室侧的闸阀中; 在转移室一侧的闸阀; 密封构件，其形成在所述输送室侧的所述闸阀中; 以及形成在处理室侧的闸阀与传送室一侧的闸阀之间的绝热体。

85. 发明申请

US20100216300A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100216300A1
公开(公告)日：2010-08-26
申请号：US12675289
申请日：2008-08-07
申请人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
发明人： Hirokazu Ueda , Toshihisa Nozawa , Takaaki Matsuoka , Akinobu Teramoto , Tadahiro Ohmi
IPC分类号： H01L21/28
CPC分类号： H01L21/02164 , C23C16/511 , H01J37/32192 , H01L21/02274 , H01L21/31055 , H01L21/31116
摘要： A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×1011 cm−3 near a surface of the semiconductor substrate.
摘要翻译：一种半导体器件制造方法，所述方法包括：在半导体衬底上形成半导体元件; 并且通过使用微波作为等离子体源，通过使用具有低于1.5eV的等离子体的电子温度和高于1×10 11 cm -3的等离子体的电子密度的微波等离子体进行CVD工艺，在半导体元件上形成绝缘膜半导体衬底的表面。

86. 发明申请

US20100132891A1 VALVE AND PROCESSING APPARATUS PROVIDED WITH THE SAME 有权
标题翻译：阀门和加工设备提供
公开(公告)号：US20100132891A1
公开(公告)日：2010-06-03
申请号：US12598238
申请日：2008-04-30
申请人： Toshihisa Nozawa
发明人： Toshihisa Nozawa
IPC分类号： H01L21/465 , F16K1/16 , H01L21/461
CPC分类号： F16K3/06
摘要： A disclosed valve comprises a first valve body including first and second openings that permit gaseous communication between a chamber and an evacuation apparatus; a sealing valve element that moves near/away from the second opening to open/close the second opening; a sealing member provided in the sealing valve element to seal the second opening when the sealing valve element closes the second opening; a valve element retreat area that is provided in an inner wall of the first valve body away from the second opening, and shields the sealing member from an inside of the first valve body when the sealing valve element is moved to the valve element retreat area; and a first pivot shaft that pivots the sealing valve element so that the sealing valve element may be located in one of the second opening and the valve element retreat area.
摘要翻译：所公开的阀包括第一阀体，其包括第一和第二开口，其允许腔室和抽空装置之间的气体连通; 密封阀元件，其从第二开口靠近/远离，以打开/关闭第二开口; 设置在所述密封阀元件中的密封构件，用于在所述密封阀元件关闭所述第二开口时密封所述第二开口; 阀元件后退区域，其设置在所述第一阀体的内壁远离所述第二开口，并且当所述密封阀元件移动到所述阀元件退避区域时，将所述密封构件从所述第一阀体的内部屏蔽; 以及枢转所述密封阀元件使得所述密封阀元件可位于所述第二开口和所述阀元件退避区域中的一个中的第一枢转轴。

87. 发明申请

US20100032838A1 AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：非晶碳膜，半导体器件，膜成膜方法，成膜装置和储存介质
公开(公告)号：US20100032838A1
公开(公告)日：2010-02-11
申请号：US12516862
申请日：2007-11-30
申请人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
发明人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
IPC分类号： H01L23/532 , H01L21/314 , C09D1/00
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02123 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要翻译：本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

88. 发明申请

US20090242130A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090242130A1
公开(公告)日：2009-10-01
申请号：US12095262
申请日：2006-11-15
申请人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： B44C1/22 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。

89. 发明申请

US20090208707A1 THIN FILM FORMING METHOD AND LAYERED STRUCTURE OF THIN FILM 审中-公开
标题翻译：薄膜形成方法和薄膜的层状结构
公开(公告)号：US20090208707A1
公开(公告)日：2009-08-20
申请号：US12305226
申请日：2007-10-04
申请人： Hirokazu Ueda , Toshihisa Nozawa
发明人： Hirokazu Ueda , Toshihisa Nozawa
IPC分类号： B32B3/10 , C23C14/34 , B32B9/00 , B32B15/04
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： Disclosed is a thin film forming method including: a prevention film forming process for forming a charging damage prevention film for preventing a charging damage on a surface of a target object by a sputtering; and a thin film forming process for forming a desired thin film on a surface of the charging damage prevention film, which is formed on the surface of the target object, by a sputtering.
摘要翻译：公开了一种薄膜形成方法，包括：防止膜形成过程，用于形成用于通过溅射防止对象物体的表面的带电损伤的带电损伤防止膜; 以及通过溅射形成在目标物体的表面上的充电损伤防止膜的表面上形成所需薄膜的薄膜形成工艺。

90. 发明申请

US20090053900A1 Processing Apparatus and Processing Method 有权
标题翻译：处理装置及处理方法
公开(公告)号：US20090053900A1
公开(公告)日：2009-02-26
申请号：US12226089
申请日：2007-04-06
申请人： Toshihisa Nozawa , Koji Kotani , Kouji Tanaka
发明人： Toshihisa Nozawa , Koji Kotani , Kouji Tanaka
IPC分类号： C23F1/00 , C23C16/00 , C23C16/46 , H01L21/302 , H01L21/31
CPC分类号： F17D1/04 , C23C16/45502 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J2237/1825 , Y10T137/0368
摘要： A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.
摘要翻译：处理装置包括具有用于放置处理对象的放置台，具有真空泵的排气系统和用于在处理容器中排出气氛的压力控制阀的处理容器。具有气体喷射孔的气体注入单元设置在处理容器中，以及用于向气体注入单元供给处理气体的气体供给单元。整个处理装置由控制单元控制。控制单元控制排气系统和气体供给单元。当开始预定的过程时，在排气系统排出处理容器中的气氛的同时，以较短的时间提供大于规定流量的流量的处理气体，然后供给规定流量的处理气体。

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