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81. 发明授权

US07123488B2 DC/DC converter including a Zener diode having a substantially zero temperature coefficient 失效
标题翻译： DC / DC转换器包括具有基本为零温度系数的齐纳二极管
公开(公告)号：US07123488B2
公开(公告)日：2006-10-17
申请号：US10998234
申请日：2004-11-24
申请人： Masayuki Hirabayashi , Hirotaka Yamamoto , Eiji Yoshida , Toru Yoshino
发明人： Masayuki Hirabayashi , Hirotaka Yamamoto , Eiji Yoshida , Toru Yoshino
IPC分类号： H02M3/335
CPC分类号： H02M3/3385 , H02M1/10 , H02M1/32
摘要： A DC/DC converter has a transformer having a primary winding, a secondary winding, and an auxiliary winding, a switching transistor connected in series to the primary winding, a control transistor for turning the switching transistor on or off, and a feedback control circuit connected to the control transistor and the auxiliary winding. The feedback control circuit includes a Zener diode having a substantially zero temperature coefficient. The Zener diode has a Zener voltage which lies in a range between 5 volts and 6 volts. In order to cancel a temperature characteristic of the control transistor, the temperature coefficient of the Zener diode is selected.
摘要翻译： DC / DC转换器具有初级绕组，次级绕组和辅助绕组的变压器，与初级绕组串联连接的开关晶体管，用于使开关晶体管导通或关断的控制晶体管和反相控制电路连接到控制晶体管和辅助绕组。反馈控制电路包括基本为零的温度系数的齐纳二极管。齐纳二极管具有位于5伏至6伏范围内的齐纳电压。为了消除控制晶体管的温度特性，选择齐纳二极管的温度系数。

82. 发明授权

US07102189B2 Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture 有权
标题翻译：半导体器件适用于形成具有良好覆盖性的铂等导电膜及其制造
公开(公告)号：US07102189B2
公开(公告)日：2006-09-05
申请号：US10745967
申请日：2003-12-29
申请人： Nobuyuki Nishikawa , Hiroshi Minakata , Kouji Tsunoda , Eiji Yoshida
发明人： Nobuyuki Nishikawa , Hiroshi Minakata , Kouji Tsunoda , Eiji Yoshida
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/10814 , H01L27/10855 , H01L28/91
摘要： A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.
摘要翻译：紧密接触层设置在半导体衬底上，紧密接触层由选自耐火金属，难熔金属合金，难熔金属氮化物和难熔金属的氮化硅组成的组中的一种材料制成。氧化物表面层设置在紧密接触层的表面上，氧化物表面层由构成紧密接触层的材料的氧化物制成。第一导电层设置在氧化物表面层的表面上，第一导电层由含有铂族的铂族或合金制成。当在紧密接触层上形成由诸如铂族基团的金属制成的导电层时，可以防止覆盖和形态的劣化。

83. 发明申请

US20060191242A1 Device for exchanging a bottle closure 有权
标题翻译：用于更换瓶盖的装置
公开(公告)号：US20060191242A1
公开(公告)日：2006-08-31
申请号：US11349878
申请日：2006-02-08
申请人： Eiji Yoshida , Keiichi Yahagi , Hiroyuki Matsunaga , Satoshi Otake , Hiroki Matsumoto , Tatsuro Ishimatsu , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo , Eri Kawaguchi , Ikuo Nakayama , Yuta Ogino , Syotaro Nakajima
发明人： Eiji Yoshida , Keiichi Yahagi , Hiroyuki Matsunaga , Satoshi Otake , Hiroki Matsumoto , Tatsuro Ishimatsu , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo , Eri Kawaguchi , Ikuo Nakayama , Yuta Ogino , Syotaro Nakajima
IPC分类号： B67B1/04 , B65B31/00
CPC分类号： B65D39/0052 , B67B1/00 , B67B1/045 , B67B7/04 , B67B7/0411 , B67B7/0441 , B67D2001/0481 , B67D2001/0814
摘要： A stopper change device (10) includes an airtight chamber body (21) detachably mountable on a head of a bottle, a gas supply port (19) for supplying N gas to the chamber body, an air vent valve (57) for discharging air from the chamber body, a first supporting structure (28) movable upward and downward for supporting a corkscrew, and a second supporting structure (34) movable upward and downward for containing a substitute stopper. The first and second supporting structures are mutually position changeable, and one of them is selectively placed above an opening of the bottle. When the first supporting structure (28) is placed above the opening, a bottle stopper can be pulled in N gas atmosphere. On the other hand, when the second supporting structure (34) is placed above the opening, the substitute stopper is mountable on the head of the bottle in N gas atmosphere. By changing the bottle stopper with the substitute stopper using this device, entering of air in the bottle as a cause of deterioration in a quality can be prevented.
摘要翻译：止动器更换装置（10）包括可拆卸地安装在瓶头上的气密室体（21），用于向室主体供给N气体的气体供给口（19），用于排出空气的排气阀从所述腔室主体中可以上下移动以支撑开塞钻的第一支撑结构（28）和用于容纳替代塞子的上下移动的第二支撑结构（34）。第一和第二支撑结构相互位置可变，并且其中一个被选择性地放置在瓶的开口上方。当第一支撑结构（28）放置在开口上方时，可以在N气体气氛中拉动瓶塞。另一方面，当第二支撑结构（34）位于开口上方时，替代塞子可在N气体气氛中安装在瓶头上。通过使用该装置用替代塞子更换瓶塞，可以防止质量下降的原因进入瓶子中的空气。

84. 发明申请

US20060144865A1 Liquid container 审中-公开
标题翻译：液体容器
公开(公告)号：US20060144865A1
公开(公告)日：2006-07-06
申请号：US10547255
申请日：2004-03-05
申请人： Eiji Yoshida , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo
发明人： Eiji Yoshida , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo
IPC分类号： B65D37/00 , B65D83/14
CPC分类号： A47J41/022 , A47J41/0033
摘要： It is constructed such that a closed space (12b) of an inner container (12) having a heat retaining property which constitutes a liquid container (1B) is able to be closed airtightly by closing of a lid structure (141). Contact between stored liquid and the atmosphere is shut off by making the inside of the closed space be in an inert gas atmosphere. It is constructed such that the stored liquid is able to be discharged by pressure of supplied inert gas at a time of opening of a discharge valve (168) communicating with the inner container. Oxidation deterioration of liquid is effectively prevented by shut-off from the atmosphere. When the stored liquid is discharged in small portions, preventive effect is maintained by continual supply of inert gas.
摘要翻译：其构造使得能够通过关闭盖结构（141）气密地闭合构成液体容器（1B）的具有保温性的内部容器（12）的封闭空间（12b）。通过使封闭空间的内部处于惰性气体气氛中，可以切断储存液体与大气之间的接触。其结构使得在与内部容器连通的排出阀（168）打开时，储存的液体能够通过供给的惰性气体的压力排出。通过从大气中的切断有效地防止了液体的氧化劣化。当储存的液体以小部分排出时，通过连续供应惰性气体来保持预防效果。

85. 发明申请

US20050221589A1 Method of manufacturing a semiconductor device and a method for fixing the semiconductor device using substrate jig 有权
公开(公告)号：US20050221589A1
公开(公告)日：2005-10-06
申请号：US11075758
申请日：2005-03-10
申请人： Kazuo Teshirogi , Yuzo Shimobeppu , Kazuhiro Yoshimoto , Mitsuhisa Watanabe , Yoshiaki Shinjo , Eiji Yoshida , Noboru Hayasaka
发明人： Kazuo Teshirogi , Yuzo Shimobeppu , Kazuhiro Yoshimoto , Mitsuhisa Watanabe , Yoshiaki Shinjo , Eiji Yoshida , Noboru Hayasaka
IPC分类号： H01L21/68 , H01L21/00 , H01L21/301 , H01L21/304 , H01L21/52 , H01L21/58 , H01L21/60 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67092 , B24B37/042 , B32B37/003 , B32B37/1018 , B32B38/0012 , B32B2310/0831 , B32B2457/14 , H01L21/304 , H01L21/67132 , H01L21/6836 , H01L21/6838 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2224/83191 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/01087 , H01L2924/07802 , Y10T29/5313 , Y10T29/53191 , Y10T428/1452 , H01L2924/3512 , H01L2924/00
摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

86. 发明申请

US20050167812A1 Semiconductor device, three-dimensional semiconductor device, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件，三维半导体器件以及半导体器件的制造方法
公开(公告)号：US20050167812A1
公开(公告)日：2005-08-04
申请号：US11062735
申请日：2005-02-23
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L21/768 , H01L23/31 , H01L23/48 , H01L23/485 , H01L23/522 , H01L25/065 , H01L29/76
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

87. 发明申请

US20050162872A1 DC/DC converter including a zener diode having a substantially zero temperature coefficient 失效
标题翻译： DC / DC转换器包括具有基本为零温度系数的齐纳二极管
公开(公告)号：US20050162872A1
公开(公告)日：2005-07-28
申请号：US10998234
申请日：2004-11-24
申请人： Masayuki Hirabayashi , Hirotaka Yamamoto , Eiji Yoshida , Toru Yoshino
发明人： Masayuki Hirabayashi , Hirotaka Yamamoto , Eiji Yoshida , Toru Yoshino
IPC分类号： H02M1/10 , H02M3/338 , H02M3/335
CPC分类号： H02M3/3385 , H02M1/10 , H02M1/32
摘要： A DC/DC converter has a transformer having a primary winding, a secondary winding, and an auxiliary winding, a switching transistor connected in series to the primary winding, a control transistor for turning the switching transistor on or off, and a feedback control circuit connected to the control transistor and the auxiliary winding. The feedback control circuit includes a Zener diode having a substantially zero temperature coefficient. The Zener diode has a Zener voltage which lies in a range between 5 volts and 6 volts. In order to cancel a temperature characteristic of the control transistor, the temperature coefficient of the Zener diode is selected.
摘要翻译： DC / DC转换器具有初级绕组，次级绕组和辅助绕组的变压器，与初级绕组串联连接的开关晶体管，用于使开关晶体管导通或关断的控制晶体管和反相控制电路连接到控制晶体管和辅助绕组。反馈控制电路包括基本为零的温度系数的齐纳二极管。齐纳二极管具有位于5伏至6伏范围内的齐纳电压。为了消除控制晶体管的温度特性，选择齐纳二极管的温度系数。

88. 发明申请

US20050016129A1 Plug replacing device and plug replacing method 有权
标题翻译：插头更换装置和插头更换方法
公开(公告)号：US20050016129A1
公开(公告)日：2005-01-27
申请号：US10493815
申请日：2003-05-23
申请人： Eiji Yoshida , Keiichi Yahagi , Hiroyuki Matsunaga , Satoshi Otake , Hiroki Matsumoto , Tatsuro Ishimatsu , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo , Eri Kawaguchi , Ikuo Nakayama , Yuta Ogino , Syotaro Nakajima
发明人： Eiji Yoshida , Keiichi Yahagi , Hiroyuki Matsunaga , Satoshi Otake , Hiroki Matsumoto , Tatsuro Ishimatsu , Yusuke Yoshida , Kagenori Nagao , Satomi Kudo , Eri Kawaguchi , Ikuo Nakayama , Yuta Ogino , Syotaro Nakajima
IPC分类号： B65B31/04 , B67B1/00 , B67B1/04 , B67B7/04 , B67D1/00 , B67D1/04 , F16D11/00 , B65B7/28
CPC分类号： B65D39/0052 , B67B1/00 , B67B1/045 , B67B7/04 , B67B7/0411 , B67B7/0441 , B67D2001/0481 , B67D2001/0814
摘要： A stopper change device (10) includes an airtight chamber body (21) detachably mountable on a head of a bottle, a gas supply port (19) for supplying N gas to the chamber body, an air vent valve (57) for discharging air from the chamber body, a first supporting structure (28) movable upward and downward for supporting a corkscrew, and a second supporting structure (34) movable upward and downward for containing a substitute stopper. The first and second supporting structures are mutually position changeable, and one of them is selectively placed above an opening of the bottle. When the first supporting structure (28) is placed above the opening, a bottle stopper can be pulled in N gas atmosphere. On the other hand, when the second supporting structure (34) is placed above the opening, the substitute stopper is mountable on the head of the bottle in N gas atmosphere. By changing the bottle stopper with the substitute stopper using this device, entering of air in the bottle as a cause of deterioration in a quality can be prevented.
摘要翻译：止动器更换装置（10）包括可拆卸地安装在瓶头上的气密室体（21），用于向室主体供给N气体的气体供给口（19），用于排出空气的排气阀从所述腔室主体中可以上下移动以支撑开塞钻的第一支撑结构（28）和用于容纳替代塞子的上下移动的第二支撑结构（34）。第一和第二支撑结构相互位置可变，并且其中一个被选择性地放置在瓶的开口上方。当第一支撑结构（28）放置在开口上方时，可以在N气体气氛中拉动瓶塞。另一方面，当第二支撑结构（34）位于开口上方时，替代塞子可在N气体气氛中安装在瓶头上。通过使用该装置用替代塞子更换瓶塞，可以防止质量下降的原因进入瓶子中的空气。

89. 发明授权

US5420843A Recording medium position indicating apparatus and method 失效
标题翻译：记录介质位置指示装置和方法
公开(公告)号：US5420843A
公开(公告)日：1995-05-30
申请号：US269960
申请日：1994-06-30
申请人： Eiji Yoshida
发明人： Eiji Yoshida
IPC分类号： G04F3/00 , G11B27/10 , G11B27/22 , G11B27/34 , G11B7/00
CPC分类号： G11B27/105 , G11B27/22 , G11B27/34 , G11B2220/2545
摘要： A reading head pauses at a predetermined position on a selected one of a plurality of series information recorded, for example, on a CD (compact disc). Either a preceding distance between a current position of the reading head on the series of information and a starting position on the series of information, at which starting position the series of information starts, or a remaining distance between the current position on the series of information and an ending position on the series of information, at which ending position the series of information ends, is indicated. The above indication is switched automatically in response to the pausing of the reading head so that the indication of a first one of the preceding distance and the remaining distance is changed to the indication of a second one thereof. Then after elapsing of a predetermined time period, the indication is automatically switched from the indication of the second one of the predetermined distance and the remaining distance to the indication of the first one thereof.
摘要翻译：读取头在例如CD（光盘）上记录的多个系列信息中的所选择的一个上的预定位置暂停。在一系列信息上的读取头的当前位置与一系列信息的起始位置之间的前一距离之间的距离，起始位置开始一系列信息，或者一系列信息上的当前位置之间的剩余距离并且指示一系列信息的结束位置，其中一系列信息的结束位置结束。响应于读取头的暂停而自动切换上述指示，使得先前距离和剩余距离中的第一个的指示被改变为其第二个的指示。然后在经过预定时间段之后，该指示自动地从预定距离中的第二个的指示和剩下的距离切换到其第一个的指示。

90. 发明授权

US5364449A Process for refining crude material for copper or copper alloy 失效
标题翻译：精炼铜或铜合金原料的工艺
公开(公告)号：US5364449A
公开(公告)日：1994-11-15
申请号：US988960
申请日：1993-03-15
申请人： Takashi Nakamura , Kenji Osumi , Kiyomasa Oga , Motohiro Arai , Ryukichi Ikeda , Eiji Yoshida , Hirofumi Okada , Ryusuke Hamanaka
发明人： Takashi Nakamura , Kenji Osumi , Kiyomasa Oga , Motohiro Arai , Ryukichi Ikeda , Eiji Yoshida , Hirofumi Okada , Ryusuke Hamanaka
IPC分类号： C22B15/00 , C22B15/14
CPC分类号： C22B15/0028 , C22B15/0052 , C22B15/006
摘要： A process for refining a crude material for copper or copper alloy which contains as impurity elements at least one species of Pb, Ni, Sb, S, Bi, and As in combination with at least one species of Sn, Fe, and Zn, which comprises the sequential steps of (1) melting a crude material for copper or copper alloy, (2a) increasing the oxygen concentration in the melt, thereby oxidizing Sn, Fe, and Zn into slag, (this step is carried out if the crude material contains as impurity elements at least one species of Sn, Fe, and Zn) (2b) adding to the melt at least one species selected from the group consisting of Fe, Fe oxide, Mn, and Mn oxide, thereby causing Pb, Ni, Sb, S, Bi, and As in the melt to slag in the form of compound oxide of Fe and/or Mn, (3) removing the thus formed slag from the melt, and (4) subjecting the melt to reduction.
摘要翻译： PCT No.PCT / JP92 / 00358 Sec。 371日期1993年3月15日 102（e）1993年3月15日PCT 1991年3月25日PCT公布。第WO93 / 02219号公报日期：1993年2月4日。一种用于精炼铜或铜合金粗品的方法，其含有至少一种Pb，Ni，Sb，S，Bi和As作为杂质元素，与至少一种Sn ，Fe和Zn，其包括以下顺序步骤：（1）熔化铜或铜合金的粗材料，（2a）提高熔体中的氧浓度，从而将Sn，Fe和Zn氧化成渣，（该步骤如果粗材料含有至少一种Sn，Fe和Zn的杂质元素（2b），则向熔体中加入至少一种选自Fe，Fe氧化物，Mn和Mn氧化物的物质，从而使熔体中的Pb，Ni，Sb，S，Bi和As以Fe和/或Mn的复合氧化物的形式熔渣，（3）从熔体中除去形成的炉渣，（4）熔化还原。

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