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81. 发明申请

US20120258601A1 E-Beam Enhanced Decoupled Source for Semiconductor Processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US20120258601A1
公开(公告)日：2012-10-11
申请号：US13357003
申请日：2012-01-24
申请人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L.G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/3065
CPC分类号： H01J37/04 , H01J37/32018 , H01J37/32357 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括设置在与衬底支撑件分开的处理室内的电极。该系统还包括电连接到电极的电源。电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

82. 发明申请

US20120073754A1 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 有权
标题翻译：用于等离子体加工釜的等离子体配料环组件
公开(公告)号：US20120073754A1
公开(公告)日：2012-03-29
申请号：US13021499
申请日：2011-02-04
申请人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
发明人： Anthony de la Llera , David Carman , Travis R. Taylor , Saurabh J. Ullal , Harmeet Singh
IPC分类号： H01L21/00
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂器的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

83. 发明授权

US08060330B2 Method and system for centering wafer on chuck 有权
标题翻译：用于将晶片定位在卡盘上的方法和系统
公开(公告)号：US08060330B2
公开(公告)日：2011-11-15
申请号：US12334275
申请日：2008-12-12
申请人： Robert Griffith O'Neill , Jorge Luque , Shang-I Chou , Harmeet Singh
发明人： Robert Griffith O'Neill , Jorge Luque , Shang-I Chou , Harmeet Singh
IPC分类号： G06F19/00 , G06F17/40
CPC分类号： H01L21/67748 , G01N21/9501 , G01N2021/8864 , H01L21/67259 , H01L21/68
摘要： A wafer handling mechanism is operated to place a wafer on a chuck. A chucking force is then applied to the wafer, whereby wafer support features of the chuck transfer a defect pattern onto a surface of the wafer. The surface of the wafer is analyzed by a defect metrology tool to obtain a mapping of the defect pattern transferred onto the surface of the wafer. A center coordinate of the chuck within a coordinate system of the wafer is determined by analyzing the defect pattern as transferred to the surface of the wafer. A spatial offset between the center coordinate of the chuck and the center of the wafer is determined. The spatial offset is used to adjust the wafer handling mechanism so as to enable alignment of the center of the wafer to the center coordinate of the chuck.
摘要翻译：操作晶片处理机构以将晶片放置在卡盘上。然后将夹持力施加到晶片，由此卡盘的晶片支撑特征将缺陷图案转移到晶片的表面上。通过缺陷计量工具分析晶片的表面，以获得转印到晶片表面上的缺陷图案的映射。通过分析转移到晶片表面的缺陷图案来确定夹具坐标系中的夹具的中心坐标。确定卡盘的中心坐标与晶片中心之间的空间偏移。空间偏移用于调整晶片处理机构，以便能够使晶片的中心与卡盘的中心坐标对准。

84. 发明申请

US20110242422A1 Ghosting Artifact Reduction in Temporal Noise Filtering 有权
标题翻译：时间噪声滤波中的鬼影神器减少
公开(公告)号：US20110242422A1
公开(公告)日：2011-10-06
申请号：US12753897
申请日：2010-04-04
申请人： Wei Hong , Harmeet Singh
发明人： Wei Hong , Harmeet Singh
IPC分类号： H04N5/217
CPC分类号： H04N5/2176
摘要： A method of noise filtering of a digital video sequence to reduce ghosting artifacts, the method including computing motion values for pixels in a frame of the digital video sequence based on a reference frame, computing blending factors for the pixels based on the motion values, generating filtered output pixel values by applying the blending factors to corresponding pixel values in the reference frame and the frame, wherein selected filtered output pixel values are converged toward corresponding pixel values in the frame to reduce ghosting artifacts, and outputting the filtered frame.
摘要翻译：一种对数字视频序列进行噪声滤波以减少重影伪影的方法，所述方法包括基于参考帧计算数字视频序列的帧中的像素的运动值，基于运动值计算像素的混合因子，生成通过将混合因子应用于参考帧和帧中的相应像素值，滤波后的输出像素值，其中选择的滤波输出像素值朝向帧中的相应像素值收敛以减少重影伪像，并输出滤波后的帧。

85. 发明申请

US20100150695A1 Method and System for Centering Wafer on Chuck 有权
标题翻译：夹头晶圆定心方法与系统
公开(公告)号：US20100150695A1
公开(公告)日：2010-06-17
申请号：US12334275
申请日：2008-12-12
申请人： Robert Griffith O'Neill , Jorge Luque , Shang-I Chou , Harmeet Singh
发明人： Robert Griffith O'Neill , Jorge Luque , Shang-I Chou , Harmeet Singh
IPC分类号： H01L21/687 , G01N21/88 , H01L21/67
CPC分类号： H01L21/67748 , G01N21/9501 , G01N2021/8864 , H01L21/67259 , H01L21/68
摘要： A wafer handling mechanism is operated to place a wafer on a chuck. A chucking force is then applied to the wafer, whereby wafer support features of the chuck transfer a defect pattern onto a surface of the wafer. The surface of the wafer is analyzed by a defect metrology tool to obtain a mapping of the defect pattern transferred onto the surface of the wafer. A center coordinate of the chuck within a coordinate system of the wafer is determined by analyzing the defect pattern as transferred to the surface of the wafer. A spatial offset between the center coordinate of the chuck and the center of the wafer is determined. The spatial offset is used to adjust the wafer handling mechanism so as to enable alignment of the center of the wafer to the center coordinate of the chuck.
摘要翻译：操作晶片处理机构以将晶片放置在卡盘上。然后将夹持力施加到晶片，由此卡盘的晶片支撑特征将缺陷图案转移到晶片的表面上。通过缺陷计量工具分析晶片的表面，以获得转印到晶片表面上的缺陷图案的映射。通过分析转移到晶片表面的缺陷图案来确定夹具坐标系中的夹具的中心坐标。确定卡盘的中心坐标与晶片中心之间的空间偏移。空间偏移用于调整晶片处理机构，以便能够使晶片的中心与卡盘的中心坐标对准。

86. 发明申请

US20060273072A1 Tungsten silicide etch process with reduced etch rate micro-loading 有权
标题翻译：硅化钨蚀刻工艺，降低蚀刻速率微加载
公开(公告)号：US20060273072A1
公开(公告)日：2006-12-07
申请号：US11440163
申请日：2006-05-23
申请人： Sok Tan , Shenjian Liu , Harmeet Singh , Sam Lee , Linda Lee
发明人： Sok Tan , Shenjian Liu , Harmeet Singh , Sam Lee , Linda Lee
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

87. 发明授权

US06384978B1 Temperature-compensated optical filter assemblies and related methods 有权
标题翻译：温度补偿滤光片组件及相关方法
公开(公告)号：US06384978B1
公开(公告)日：2002-05-07
申请号：US09272112
申请日：1999-03-19
申请人： Harmeet Singh , Michael S. Beard
发明人： Harmeet Singh , Michael S. Beard
IPC分类号： G02B2700
CPC分类号： G02B26/007 , G02B5/281 , G02B7/006 , G02B7/008
摘要： An apparatus and associated method are provided to compensate for temperature-induced drift in the center wavelength of an optical filter, such as an interference filter or an etalon filter. Interference filters can be used to filter out one among a number of narrow, closely-spaced channels in an optical wavelength division multiplexed (WDM) communications system. Etalon filters can be used to lock the output wavelength of distributed feedback lasers and in other related applications. The center wavelength of interference filters and etalon filters changes with both temperature and the angle of incidence of the optical beam. The apparatus and associated method of the invention use a positioner with a different coefficient of thermal expansion to adjust the angle of incidence of the filter as the temperature changes, thereby offsetting the temperature-induced center wavelength change. The invention provides temperature-compensated optical filter assemblies, add-drop multiplexers, optical networking systems, and associated methods.
摘要翻译：提供了一种装置和相关方法来补偿诸如干涉滤光器或标准具滤光器之类的滤光器的中心波长的温度诱导漂移。干涉滤波器可用于在光波分复用（WDM）通信系统中的多个狭窄的，紧密间隔的信道中滤除一个。 Etalon滤波器可用于锁定分布式反馈激光器的输出波长和其他相关应用。干涉滤光片和标准具滤光片的中心波长随着光束的温度和入射角的变化而变化。本发明的装置和相关方法使用具有不同热膨胀系数的定位器来随温度变化来调节过滤器的入射角，从而抵消温度引起的中心波长变化。本发明提供温度补偿滤光器组件，分插复用器，光网络系统和相关方法。

88. 发明授权

US06341186B1 Method and apparatus for the passband flattening of dense wavelength division optical filters 失效
标题翻译：密集波分光滤波器通带平坦化的方法和装置
公开(公告)号：US06341186B1
公开(公告)日：2002-01-22
申请号：US09290775
申请日：1999-04-13
申请人： Harmeet Singh , David Kirk Lewis
发明人： Harmeet Singh , David Kirk Lewis
IPC分类号： G02B6293
CPC分类号： G02B6/29355 , G02B6/2938 , G02B6/32
摘要： An optical flattening filter is cascaded with an optical filter between an input and an output of an optical arrangement to provide a substantially widened flat passband at an output of the optical arrangement. The optical filter is responsive to an input signal for generating a periodic or a periodic output response waveform having a cosine squared or Gaussian passband or any rounded passband shape. The optical flattening filter is designed to generate a response waveform having a spectral profile which is complementary to the periodic or aperiodic output response waveform of the optical filter. The interaction of the response waveforms of the optical filter and the optical flattening filter provide a resultant response waveform at the output of the optical arrangement wherein each peak therein is substantially flattened to provide a passband which is wider than the response waveform provided by the optical filter.
摘要翻译：光学平坦化滤光器与光学装置的输入和输出之间的滤光器级联，以在光学装置的输出处提供基本上加宽的平坦通带。滤光器响应于用于产生具有余弦平方或高斯通带或任何圆形通带形状的周期性或周期性输出响应波形的输入信号。光学平坦滤光器被设计成产生具有与光学滤波器的周期性或非周期性输出响应波形互补的光谱分布的响应波形。光学滤波器和光学平坦化滤波器的响应波形的相互作用在光学布置的输出处提供了一个合成的响应波形，其中每个峰值基本上是平坦的，以提供比由滤光器提供的响应波形宽的通带。

89. 发明授权

US06215927B1 Sensing tapes for strain and/or temperature sensing 失效
标题翻译：用于应变和/或温度感测的感应胶带
公开(公告)号：US06215927B1
公开(公告)日：2001-04-10
申请号：US09084842
申请日：1998-05-26
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： G02B634
CPC分类号： G01L1/246
摘要： A tape to be mounted on a workpiece includes an elongated support ribbon and an optical fiber attached to the support ribbon.
摘要翻译：要安装在工件上的胶带包括细长支撑带和连接到支撑带上的光纤。

90. 发明授权

US6056436A Simultaneous measurement of temperature and strain using optical sensors 失效
标题翻译：使用光学传感器同时测量温度和应变
公开(公告)号：US6056436A
公开(公告)日：2000-05-02
申请号：US25848
申请日：1998-02-19
申请人： James S. Sirkis , Harmeet Singh
发明人： James S. Sirkis , Harmeet Singh
IPC分类号： G01D5/353 , G01K11/32 , G01L1/24 , G01K9/00 , G01B9/02 , G01B11/00 , G01K11/00
CPC分类号： G01L1/241 , G01D5/35312 , G01K11/3206 , G01L1/246 , G02B6/29356 , G02B6/29359
摘要： Cascaded waveguide sensors with different sensitivities to temperature and strain produce independent temperature and strain measurements. In one embodiment a first sensor is formed of a first optical material having a corresponding first sensible thermomechanical response and a second sensor is formed of a second optical material having a corresponding second sensible thermomechanical response. The first and second thermomechanical responses are sufficiently different so as to produce independent temperature and strain measurements. Particular embodiments employ intrinsic or extrinsic Fabry-Perot interferometers (IFP, EFP),sensors, in-line fiber etalon (ILFE) sensor and a fiber-optic Bragg grating.
摘要翻译：具有不同温度和应变灵敏度的级联波导传感器产生独立的温度和应变测量。在一个实施例中，第一传感器由具有对应的第一显性热机械响应的第一光学材料形成，并且第二传感器由具有相应的第二显性热机械响应的第二光学材料形成。第一和第二热机械响应是充分不同的，以便产生独立的温度和应变测量。特定实施例采用内在或外在的法布里 - 珀罗干涉仪（IFP，EFP），传感器，直列光纤标准具（ILFE）传感器和光纤布拉格光栅。

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