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81. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

82. 发明授权

US08031444B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US08031444B2
公开(公告)日：2011-10-04
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

83. 发明授权

US07944650B2 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US07944650B2
公开(公告)日：2011-05-17
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

84. 发明授权

US07876534B2 Magneto-resistive effect device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻效应器，磁盘系统
公开(公告)号：US07876534B2
公开(公告)日：2011-01-25
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽层，以使磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

85. 发明授权

US07804667B2 Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration 有权
标题翻译：具有Heusler合金层的磁阻元件，其具有添加元素浓度变化的区域
公开(公告)号：US07804667B2
公开(公告)日：2010-09-28
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

86. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

87. 发明申请

US20100232066A1 Magneto-resistive effect element provided with GaN spacer layer 有权
标题翻译：具有GaN间隔层的磁阻效应元件
公开(公告)号：US20100232066A1
公开(公告)日：2010-09-16
申请号：US12382137
申请日：2009-03-10
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/60 , G11B5/127 , G11B5/48
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.
摘要翻译：磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。间隔层包含氮化镓（GaN）作为主要成分。根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

88. 发明申请

US20100214701A1 Magnetoresistive effect element in cpp-type structure and magnetic disk device 有权
标题翻译： cpp型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20100214701A1
公开(公告)日：2010-08-26
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

89. 发明授权

US07764470B2 Magneto-resistance effect element and thin-film magnetic head having non-magnetic spacer layer composed of one semiconductor layer and two metal layers 有权
标题翻译：磁阻效应元件和具有由一个半导体层和两个金属层组成的非磁性间隔层的薄膜磁头
公开(公告)号：US07764470B2
公开(公告)日：2010-07-27
申请号：US11682421
申请日：2007-03-06
申请人： Tomohito Mizuno , Kei Hirata , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito Mizuno , Kei Hirata , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/59683
摘要： A magneto-resistance effect element used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first and second non-magnetic metal layer, and a semiconductor layer. The first and second non-magnetic metal layer and comprise CuPt films having a thickness of more than 0 nm but no more than 2.0 nm, and the Pt content ranges from a minimum of 5 to a maximum of 25 at %.
摘要翻译：用于薄膜磁头的磁阻效应元件由依次层叠的缓冲层，反铁磁层，被钉扎层，间隔层，自由层和盖层构成，并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。被钉扎层包括其中磁化方向固定的外层，非磁性中间层和作为铁磁层的内层。间隔层包括第一和第二非磁性金属层和半导体层。第一和第二非磁性金属层并且包括厚度大于0nm但不超过2.0nm的CuPt膜，并且Pt含量最小为5至最大为25at％。

90. 发明授权

US07739787B2 Method of manufacturing a magnetoresistive element 失效
标题翻译：制造磁阻元件的方法
公开(公告)号：US07739787B2
公开(公告)日：2010-06-22
申请号：US11715341
申请日：2007-03-08
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Shinji Hara , Takahiko Machita
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.
摘要翻译：在MR元件中，被钉扎层和自由层中的每一个包括Heusler合金层。 Heusler合金层具有两个形状为四边形并面向相反方向的表面。 Heusler合金层包括接触两个表面之一的四个侧面的一个晶粒。在制造MR元件的方法中，形成并构图成为MR元件的层状膜，然后对图案化的层叠膜进行热处理，使得包含在作为Heusler合金层的膜中的晶粒在从而形成层状膜生长，并且形成一个接触作为Heusler合金层的膜的一个表面的四面的晶粒。

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