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    • 83. 发明申请
    • Methods of Maintaining Turbine Discs to Avert Critical Bucket Attachment Dovetail Cracks
    • 维护涡轮盘避免重要铲斗附件燕尾裂纹的方法
    • US20090282678A1
    • 2009-11-19
    • US12463931
    • 2009-05-11
    • Andrew D. WilliamsWilliam CalderJohn Walsh
    • Andrew D. WilliamsWilliam CalderJohn Walsh
    • B23P6/00
    • F01D5/005B23P6/002B23P6/045F01D5/3092F05D2230/80F05D2230/90Y10T29/49318
    • Methods of to maintaining turbine discs prone to cracks in bucket attachment dovetails are disclosed. In one embodiment, wherein a turbine disc comprises a plurality of bucket attachment dovetail regions, one or more of the bucket attachment dovetail regions comprises a cooling slot, and each cooling slot comprises edges and adjacent surfaces, a method comprises inspecting the one or more of the bucket attachment dovetail regions comprising a cooling slot to confirm that each bucket attachment dovetail region meets predetermined minimum standards. The method further comprises blending the edges of the at least one of the cooling slots. The method further comprises polishing the edges of the at least one of the cooling slots. The method further comprises peening the edges of the at least one of the cooling slots. The method further comprises coating the edges and adjacent surfaces of at least one of the cooling slots.
    • 公开了保持涡轮盘容易在铲斗装卸燕尾裂缝的方法。 在一个实施例中,其中涡轮盘包括多个铲斗附接燕尾区域,所述铲斗附接燕尾区域中的一个或多个包括冷却槽,并且每个冷却槽包括边缘和相邻表面,一种方法包括:检查一个或多个 所述铲斗附接燕尾区域包括冷却槽,以确认每个铲斗附接燕尾形区域满足预定的最小标准。 该方法还包括混合至少一个冷却槽的边缘。 该方法还包括抛光至少一个冷却槽的边缘。 该方法还包括对这些冷却槽中的至少一个的边缘进行喷丸处理。 该方法还包括涂覆至少一个冷却槽的边缘和相邻表面。
    • 86. 发明申请
    • METHOD FOR CHARACTERIZING SHEAR WAVE FORMATION ANISOTROPY
    • 用于表征剪切波形成方法的方法
    • US20080106975A1
    • 2008-05-08
    • US11940236
    • 2007-11-14
    • J. DonaldTom BrattonJohn Walsh
    • J. DonaldTom BrattonJohn Walsh
    • G01V1/30
    • G01V1/50G01V1/284G01V2210/626
    • A method of characterizing shear wave anisotropy in a formation includes obtaining crossed-dipole waveforms from a borehole penetrating the formation over a range of depths and frequencies, determining far-field slowness in a fast-shear and slow-shear direction using a low-frequency portion of the crossed-dipole waveforms, and determining near-wellbore slowness in the fast-shear and slow-shear directions using a high-frequency portion of the crossed-dipole waveforms. The method also includes marking a selected depth of the formation as having intrinsic anisotropy if at the selected depth the far-field slowness in the fast-shear direction is less than the far-field slowness in the slow-shear direction and the near-wellbore slowness in the fast-shear direction is less than the near-wellbore slowness in the slow-shear direction. The selected depth is marked as having stress-induced anisotropy if the far-field slowness in the fast-shear direction is less than the far-field slowness in the slow-shear direction and the near-wellbore slowness in the fast-shear direction is greater than the near-wellbore slowness in the slow-shear direction.
    • 表征地层中剪切波各向异性的方法包括从深度和频率范围穿透地层的钻孔获得交叉偶极子波形,使用低频确定快剪切和慢剪切方向的远场慢度 交叉偶极子波形的一部分,并且使用交叉偶极子波形的高频部分确定快剪切和慢剪切方向的近井筒慢度。 该方法还包括将所选地层的深度标记为具有固有的各向异性,如果在所选择的深度处,快剪切方向的远场慢度小于慢剪切方向的远场慢度和近井筒 快剪切方向的缓慢小于慢剪切方向的近井筒慢度。 如果快剪切方向的远场慢度小于慢剪切方向的远场慢度,则选择的深度被标记为具有应力诱导的各向异性,并且快剪切方向的近井筒慢度是 大于慢剪切方向的近井眼缓慢。
    • 88. 发明授权
    • Method for characterizing shear wave formation anisotropy
    • 表征剪切波形成各向异性的方法
    • US07310285B2
    • 2007-12-18
    • US11196907
    • 2005-08-04
    • J. Adam DonaldTom R. BrattonJohn Walsh
    • J. Adam DonaldTom R. BrattonJohn Walsh
    • G01S15/00G01V1/00
    • G01V1/50G01V1/284G01V2210/626
    • A method of characterizing shear wave anisotropy in a formation includes obtaining crossed-dipole waveforms from a borehole penetrating the formation over a range of depths and frequencies, determining far-field slowness in a fast-shear and slow-shear direction using a low-frequency portion of the crossed-dipole waveforms, and determining near-wellbore slowness in the fast-shear and slow-shear directions using a high-frequency portion of the crossed-dipole waveforms. The method also includes marking a selected depth of the formation as having intrinsic anisotropy if at the selected depth the far-field slowness in the fast-shear direction is less than the far-field slowness in the slow-shear direction and the near-wellbore slowness in the fast-shear direction is less than the near-wellbore slowness in the slow-shear direction. The selected depth is marked as having stress-induced anisotropy if the far-field slowness in the fast-shear direction is less than the far-field slowness in the slow-shear direction and the near-wellbore slowness in the fast-shear direction is greater than the near-wellbore slowness in the slow-shear direction.
    • 表征地层中剪切波各向异性的方法包括从深度和频率范围穿透地层的钻孔获得交叉偶极子波形,使用低频确定快剪切和慢剪切方向的远场慢度 交叉偶极子波形的一部分,并且使用交叉偶极子波形的高频部分确定快剪切和慢剪切方向的近井筒慢度。 该方法还包括将所选地层的深度标记为具有固有的各向异性,如果在所选择的深度处,快剪切方向的远场慢度小于慢剪切方向的远场慢度和近井筒 快剪切方向的缓慢小于慢剪切方向的近井筒慢度。 如果快剪切方向的远场慢度小于慢剪切方向的远场慢度,则选择的深度被标记为具有应力诱导的各向异性,并且快剪切方向的近井筒慢度是 大于慢剪切方向的近井眼缓慢。
    • 89. 发明授权
    • Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory devices
    • 垂直内部连接的沟槽单元(V-ICTC)和半导体存储器件的形成方法
    • US06566190B2
    • 2003-05-20
    • US09941689
    • 2001-08-30
    • Brian S. LeeJohn Walsh
    • Brian S. LeeJohn Walsh
    • H01L2994
    • H01L27/10864H01L27/10841H01L27/10867H01L27/10876H01L27/1203H01L29/66181
    • A dynamic random access memory (DRAM) device having a vertical transistor and an internally-connected strap (ICS) to connect the transistor to the capacitor. The ICS makes no direct contact with the substrate. The DRAM cell operates at a substantially lower cell capacitance than that required for a conventional buried strap trench (BEST) cell without causing any negative impact on device performance. The lower cell capacitance also extends the feasibility of deep trench capacitor manufacturing technology without requiring new materials or processing methods. A method of manufacturing the DRAM includes forming a very thin Si layer on top of a DT cell while at the same time the method forms an isolated layer replacing a conventional collar. The formation of the SOI by internal thermal oxidation (ITO) makes the structure in such a manner that the device may be fully depleted.
    • 具有垂直晶体管和内部连接的带(ICS)的动态随机存取存储器(DRAM)器件,用于将晶体管连接到电容器。 ICS不与基板直接接触。 DRAM单元以比常规掩埋带沟槽(BEST)单元所需的电容小得多的单元电容器工作,而不会对器件性能造成任何负面影响。 较低的电池电容也扩大了深沟槽电容器制造技术的可行性,而不需要新的材料或加工方法。 制造DRAM的方法包括在DT单元的顶部上形成非常薄的Si层,同时该方法形成代替传统套环的隔离层。 通过内部热氧化(ITO)形成SOI使得该装置可以完全耗尽。
    • 90. 发明授权
    • Indane compounds and their pharmaceutical use
    • 吲哚化合物及其药物用途
    • US06433021B1
    • 2002-08-13
    • US09453444
    • 1999-12-03
    • Neil FrankishHelen SheridanJohn WalshMichael Jordan
    • Neil FrankishHelen SheridanJohn WalshMichael Jordan
    • A61K3112
    • C07C49/835C07C35/32C07C45/64C07C45/72C07C49/252C07C49/683C07C49/747C07C49/798
    • Indane compounds of general formulae (1) to (4) and their pharmaceutical use, particularly to achieve mast cell stabilising activity and/or anti-inflammatory activity are described. In these formulae R1 to R7 may be selected from: H, halo, hydroxy, alkoxy, aryloxy, acetoxy, carboxy, cyclopentyl, alkyl carbonyl, hydro carbonyl, amino, amido, alkylamino, hydroxyamino, amine oxide groups, azo groups, cyano, hydrazino groups, hydrazide groups, hydrazone groups, indane, indene, imide groups, iminoether groups, ureyl groups, oxime, nitro, nitrate, nitrite, nitroso groups, nitirile, heterocyclic groups containing hetero atoms selected from one or more of N, O or S, aralkyl groups, aryl groups, mono and polybenzoid aryl groups, substituted aryl groups, thiol, thioureyl, phenylthiol groups, sulphonic acid groups, sulphoxide groups, sulphone groups, carboxylic acid groups of C1 to C10 which may be substituted or unsubstituted, alkyl, substituted alkyl groups, acyl groups, substituted acyl groups; where R1 and R3 may together represent a double bond and wherein in (CH2)n, n is 0 to 8.
    • 描述了通式(1)至(4)的茚满化合物及其药物用途,特别是实现肥大细胞稳定活性和/或抗炎活性。 在这些式中,R 1至R 7可以选自:H,卤素,羟基,烷氧基,芳氧基,乙酰氧基,羧基,环戊基,烷基羰基,氢羰基,氨基,酰氨基,烷基氨基,羟基氨基,氧化胺基,偶氮基,氰基, 肼基,酰肼基,腙基,茚满,茚,酰亚胺基,亚氨基醚基,脲基,肟,硝基,硝酸根,亚硝酸根,亚硝基,亚硝基,含有选自N,O中的一个或多个的杂原子的杂环基, S,芳烷基,芳基,单和多亚苄基芳基,取代的芳基,硫醇,硫脲基,苯硫醇基,磺酸基,亚砜基,砜基,可被取代或未取代的C1至C10的羧酸基,烷基 取代的烷基,酰基,取代的酰基; 其中R 1和R 3可以一起表示双键,并且其中在(CH 2)n中,n是0至8。