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81. 发明授权

US07833874B2 Technique for forming an isolation trench as a stress source for strain engineering 有权
标题翻译：形成隔离沟槽作为应变工程应力源的技术
公开(公告)号：US07833874B2
公开(公告)日：2010-11-16
申请号：US11534726
申请日：2006-09-25
申请人： Kai Frohberg , Patrick Press , Thomas Werner
发明人： Kai Frohberg , Patrick Press , Thomas Werner
IPC分类号： H01L21/76
CPC分类号： H01L21/84 , H01L21/76283 , H01L21/823807 , H01L21/823878 , H01L27/1203
摘要： By forming a non-oxidizable liner in an isolation trench and selectively modifying the liner within the isolation trench, the stress characteristics of the isolation trench may be adjusted. In one embodiment, a high compressive stress may be obtained by treating the liner with an ion bombardment and subsequently exposing the device to an oxidizing ambient at elevated temperatures, thereby incorporating silicon dioxide into the non-oxidizable material. Hence, an increased compressive stress may be generated within the non-oxidizable layer.
摘要翻译：通过在隔离沟槽中形成不可氧化的衬垫并且选择性地修改隔离沟槽内的衬垫，可以调节隔离沟槽的应力特性。在一个实施例中，可以通过用离子轰击处理衬垫并随后在升高的温度下将器件暴露于氧化环境，从而将二氧化硅掺入到不可氧化的材料中，可获得高的压缩应力。因此，可以在非可氧化层内产生增加的压应力。

82. 发明申请

US20100197133A1 METHOD OF FORMING A METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE BY USING A HARD MASK FOR DEFINING THE VIA SIZE 有权
标题翻译：通过使用硬掩模形成半导体器件的金属化系统来确定尺寸的方法
公开(公告)号：US20100197133A1
公开(公告)日：2010-08-05
申请号：US12693030
申请日：2010-01-25
申请人： Thomas Werner , Kai Frohberg , Frank Feustel
发明人： Thomas Werner , Kai Frohberg , Frank Feustel
IPC分类号： H01L21/768 , H01L21/306
CPC分类号： H01L21/76811 , H01L21/0337 , H01L21/31144 , H01L21/76804 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： In a “via first/trench last” approach for forming metal lines and vias in a metallization system of a semiconductor device, a combination of two hard masks may be used, wherein the desired lateral size of the via openings may be defined on the basis of spacer elements, thereby resulting in significantly less demanding lithography conditions compared to conventional approaches.
摘要翻译：在用于在半导体器件的金属化系统中形成金属线和通孔的“通过第一/沟槽最后”方法中，可以使用两个硬掩模的组合，其中通孔的所需横向尺寸可以基于的间隔元件，从而与常规方法相比导致显着较低要求的光刻条件。

83. 发明申请

US20090243116A1 REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER STACKS WITH A LOW-K MATERIAL BY REDUCING CONTAMINATION OF TRENCH DIELECTRICS 有权
标题翻译：通过降低TRENCH电介质的污染，降低金属化层堆叠中的铁素体与低K材料的可变性
公开(公告)号：US20090243116A1
公开(公告)日：2009-10-01
申请号：US12355112
申请日：2009-01-16
申请人： Frank Feustel , Thomas Werner , Michael Grillberger , Kai Frohberg
发明人： Frank Feustel , Thomas Werner , Michael Grillberger , Kai Frohberg
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76808 , H01L21/76831 , H01L21/76835 , H01L23/5226 , H01L23/53238 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1031 , H01L2221/1063 , H01L2924/0002 , H01L2924/00
摘要： By forming a protection layer prior to the application of the planarization layer during a dual damascene strategy for first patterning vias and then trenches, enhanced etch fidelity may be accomplished. In other aspects disclosed herein, via openings and trenches may be patterned in separate steps, which may be accomplished by different etch behaviors of respective dielectric materials and/or the provision of an appropriate etch stop layer, while filling the via opening and the trench with a barrier material and a highly conductive metal may be achieved in a common fill sequence. Hence, the via opening may be formed on the basis of a reduced aspect ratio, while nevertheless providing a highly efficient overall process sequence.
摘要翻译：通过在用于首先图形化通孔和沟槽的双镶嵌策略期间施加平坦化层之前形成保护层，可以实现增强的蚀刻保真度。在本文公开的其他方面，通孔开口和沟槽可以在单独的步骤中被图案化，其可以通过各个介电材料的不同蚀刻行为和/或提供适当的蚀刻停止层来实现，同时将通孔开口和沟槽填充可以在共同的填充序列中实现阻挡材料和高导电性金属。因此，可以基于减小的纵横比来形成通孔开口，同时提供高效的总体工艺顺序。

84. 发明授权

US07500382B2 Detection of leaks in heat exchangers 有权
标题翻译：检测热交换器中的泄漏
公开(公告)号：US07500382B2
公开(公告)日：2009-03-10
申请号：US10551812
申请日：2004-04-01
申请人： Thomas Werner
发明人： Thomas Werner
IPC分类号： G01M3/20 , G01M3/38
CPC分类号： G01M3/228
摘要： A method for the detection of leaks in a heat exchanger having discrete flow paths for working fluid and heat exchange fluid, respectively, the method comprises introduction of a detection fluid within one of said flow paths and allowing air to flow through the other of said flow paths causing the detection fluid to pass in different directions in said one flow path, and detecting any detection fluid which has leaked from one flow path to said other flow path.
摘要翻译：一种用于检测分别具有用于工作流体和热交换流体的流动路径的热交换器中的泄漏的方法，所述方法包括在所述流动路径之一内引入检测流体，并允许空气流过所述流体中的另一个使所述检测流体在所述一个流路中沿不同方向通过的路径，以及检测从一个流路泄漏到所述另一个流路的任何检测流体。

85. 发明申请

US20080133613A1 Maintaining data consistency between integrated applications 有权
标题翻译：维护集成应用程序之间的数据一致性
公开(公告)号：US20080133613A1
公开(公告)日：2008-06-05
申请号：US11984040
申请日：2007-11-13
申请人： Thomas Werner , Claus Vetter , Lorenzo Gulli , Erik Svensson , Tatjana Kostic
发明人： Thomas Werner , Claus Vetter , Lorenzo Gulli , Erik Svensson , Tatjana Kostic
IPC分类号： G06F17/30
CPC分类号： G06F9/52
摘要： The present disclosure facilitates the interoperability between different local applications. Related local data objects are referenced via global objects or reference containers within a global data model or a global address space of an integration solution. The present disclosure assumes that the integration solution is per default in a consistent state, e.g., an engineered or initially configured global address space is regarded as consistent, and all software components that operate within this space assume that the information they access is valid and likewise consistent. The local applications are the only components that can interact with the global address space and introduce invalidations, they are continuously monitored for changes. Invalidation and subsequent synchronization or restoration of consistency is performed upon a particular triggering event related to a change in a local application object (such as an insertion or removal of an object or a modification of an attribute thereof) or related to a changing application or adapter status (component shutdown/startup).
摘要翻译：本公开有利于不同本地应用之间的互操作性。相关的本地数据对象通过集成解决方案的全局数据模型或全局地址空间中的全局对象或引用容器进行引用。本公开假定集成解决方案是以一致的状态为默认的，例如，被设计或初始配置的全局地址空间被认为是一致的，并且在该空间内操作的所有软件组件假设他们访问的信息是有效的，同样地一致本地应用程序是唯一可与全局地址空间进行交互并引入无效的组件，它们将不断地被监视以进行更改。在与本地应用对象的变化相关的特定触发事件（例如，对象的插入或移除或其属性的修改）或与改变的应用或适配器有关的特定触发事件上执行无效和随后的同步或恢复状态（组件关闭/启动）。

86. 发明申请

US20080057705A1 TECHNIQUE FOR REDUCING PLASMA-INDUCED ETCH DAMAGE DURING THE FORMATION OF VIAS IN INTERLAYER DIELECTRICS 有权
标题翻译：在层间电介质中形成VIAS期间减少等离子体诱导的蚀刻损伤的技术
公开(公告)号：US20080057705A1
公开(公告)日：2008-03-06
申请号：US11696226
申请日：2007-04-04
申请人： Frank Feustel , Kai Frohberg , Thomas Werner
发明人： Frank Feustel , Kai Frohberg , Thomas Werner
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/0276 , H01L21/0332 , H01L21/31116 , H01L21/31144 , H01L21/76823 , H01L21/76825
摘要： By forming a conductive material within an etch mask for an anisotropic etch process for patterning openings, such as vias, in a dielectric layer of a metallization structure, the probability for arcing events may be reduced, since excess charge may be laterally distributed. For example, an additional sacrificial conductive layer may be formed or an anti-reflecting coating (ARC) may be provided in the form of a conductive material in order to obtain the lateral charge distribution.
摘要翻译：通过在蚀刻掩模内形成用于各向异性蚀刻工艺的导电材料，用于图案化金属化结构的电介质层中的诸如通路的开口，因为过量电荷可能横向分布，所以可以减小电弧事件的概率。例如，可以形成附加的牺牲导电层，或者可以以导电材料的形式提供抗反射涂层（ARC），以获得横向电荷分布。

87. 发明申请

US20080026492A1 METHOD OF REDUCING CONTAMINATION BY PROVIDING A REMOVABLE POLYMER PROTECTION FILM DURING MICROSTRUCTURE PROCESSING 有权
标题翻译：通过在微结构加工中提供可拆卸的聚合物保护膜来减少污染的方法
公开(公告)号：US20080026492A1
公开(公告)日：2008-01-31
申请号：US11695657
申请日：2007-04-03
申请人： Ralf Richter , Frank Feustel , Thomas Werner , Kai Frohberg
发明人： Ralf Richter , Frank Feustel , Thomas Werner , Kai Frohberg
IPC分类号： H01L21/469 , H01L21/66
CPC分类号： H01L21/02074 , H01L21/0209 , H01L21/02096
摘要： By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electrical test procedure, in which respective contact portions are contacted through the protective layer, thereby significantly reducing particle contamination during a respective measurement process.
摘要翻译：通过在中间制造阶段提供保护层，可以实现相对于颗粒污染和表面腐蚀的增加的表面保护。在一些说明性实施例中，保护层可以在电测试过程中使用，其中相应的接触部分通过保护层接触，从而在相应的测量过程中显着地减少颗粒污染。

88. 发明申请

US20070276970A1 Data Consistency Validation 审中-公开
标题翻译：数据一致性验证
公开(公告)号：US20070276970A1
公开(公告)日：2007-11-29
申请号：US10593095
申请日：2004-03-17
申请人： Thomas Werner , Claus Vetter , Erik Svensson , Thomas Koch
发明人： Thomas Werner , Claus Vetter , Erik Svensson , Thomas Koch
IPC分类号： G06F17/30
CPC分类号： H04L41/0869 , H04L41/00
摘要： Attribute consistency works on the comparison of a reference value against the online value of the attributes, which are retrieved from the corresponding system. In order to know which attributes need to be considered for consistency, a list of relevant attributes of each entity type in each application is stored together with the reference value of the entity. This attribute list is used by the consistency service. Therefore several attribute values of one entity in one system can be included in a combined “hash” value. At start-up or in the engineering phase, this reference value is computed out of the defined attribute list. At the time of a consistency check, the values of the attributes are read and a “hash” value is calculated with the same algorithm as the reference value. If those two values differ, an inconsistency occurred. The inventive method allows validating consistency of attributes of an entity in one of the participating applications. Any inconsistency can be propagated to all other participating applications which then may trigger functionality accordingly.
摘要翻译：属性一致性用于比较参考值与属性的在线值，从相应的系统检索。为了知道哪些属性需要考虑一致性，每个应用程序中每个实体类型的相关属性的列表与实体的参考值一起存储。该属性列表由一致性服务使用。因此，一个系统中的一个实体的几个属性值可以被包括在组合的“散列”值中。在启动或工程阶段，该参考值是从定义的属性列表中计算的。在一致性检查时，读取属性的值，并使用与参考值相同的算法计算“哈希”值。如果这两个值不同，则发生不一致。本发明的方法允许验证一个参与应用中的实体的属性的一致性。任何不一致都可以传播到所有其他参与的应用程序，然后可以相应地触发功能。

89. 发明申请

US20070246156A1 Composite Structure Made Of Zero-Expansion Material And A Method For Producing Same 审中-公开
标题翻译：零膨胀材料制成的复合结构及其制造方法
公开(公告)号：US20070246156A1
公开(公告)日：2007-10-25
申请号：US11691697
申请日：2007-03-27
申请人： Heiko Kohlmann , Reinhard Hilscher , Hauke Esemann , Claudia Stolz , Thomas Werner , Ulrich Peuchert , Jose Zimmer
发明人： Heiko Kohlmann , Reinhard Hilscher , Hauke Esemann , Claudia Stolz , Thomas Werner , Ulrich Peuchert , Jose Zimmer
IPC分类号： B32B3/00
CPC分类号： C03C27/10 , Y10T428/16
摘要： A composite structure (10) is defined, consisting of components made of a zero-expansion material, in particular of a glass ceramic such as Zerodur®, which are joined together by at least one adhesive layer (17, 19, 26, 28, 30, 32). The composite structure (10) has the advantageous properties associated with zero-expansion materials, in particular a very low coefficient of thermal expansion, strength up to 150° C. and minimal outgassing.
摘要翻译：复合结构（10）被定义为由零膨胀材料制成的部件，特别是由例如Zerodur的玻璃陶瓷组成的组件，它们通过至少一个粘合剂层（17,19,26， 28，30，32）。复合结构（10）具有与零膨胀材料相关的有利特性，特别是非常低的热膨胀系数，高达150℃的强度和最小的除气。

90. 发明申请

US20060172525A1 Technique for enhancing process flexibility during the formation of vias and trenches in low-k interlayer dielectrics 有权
标题翻译：在低k层间电介质形成通孔和沟槽期间增强工艺灵活性的技术
公开(公告)号：US20060172525A1
公开(公告)日：2006-08-03
申请号：US11199526
申请日：2005-08-08
申请人： Thomas Werner , Matthias Schaller , Massud Aminpur
发明人： Thomas Werner , Matthias Schaller , Massud Aminpur
IPC分类号： H01L21/467
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/76808 , H01L21/76834
摘要： In an etch process for forming via openings and trench openings in a low-k dielectric layer, the material removal of an underlying etch stop layer is decoupled from the etching through the low-k dielectric in that the reduction in thickness is substantially achieved during the resist removal. For this purpose, the resist plasma etch may correspondingly be controlled to obtain the desired target thickness of the etch stop layer, wherein fluorine may be provided from an external source and/or fluorine may be generated in a controlled manner from polymer layers deposited within the etch chamber.
摘要翻译：在用于在低k电介质层中形成通孔开口和沟槽开口的蚀刻工艺中，下层蚀刻停止层的材料去除与通过低k电介质的蚀刻分离，因为厚度的减小在抵抗力消除。为此，可以相应地控制抗蚀剂等离子体蚀刻以获得蚀刻停止层的期望目标厚度，其中可以从外部源提供氟，和/或氟可以以受控的方式从沉积在蚀刻室。

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