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81. 发明申请

US20050205869A1 Semiconductor device and manufacturing method therefor 有权
公开(公告)号：US20050205869A1
公开(公告)日：2005-09-22
申请号：US11107822
申请日：2005-04-18
申请人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2022 , H01L27/12 , H01L27/1281
摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

82. 发明授权

US06884668B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06884668B2
公开(公告)日：2005-04-26
申请号：US10370055
申请日：2003-02-21
申请人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Atsuo Isobe , Tamae Takano , Hidekazu Miyairi
IPC分类号： H01L21/20 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/00 , H01L29/04
CPC分类号： H01L21/02691 , H01L21/02678 , H01L21/02683 , H01L21/2022 , H01L27/12 , H01L27/1281
摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.
摘要翻译：为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。多个逻辑元件用于形成电路。基膜具有多个具有矩形或条状的突出部分。包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

83. 发明授权

US06690068B2 Thin film transistors and semiconductor device 有权
标题翻译：薄膜晶体管和半导体器件
公开(公告)号：US06690068B2
公开(公告)日：2004-02-10
申请号：US09874204
申请日：2001-06-06
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo , Yasuyuki Arai
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo , Yasuyuki Arai
IPC分类号： H01L2762
CPC分类号： H01L29/66757 , H01L29/78684
摘要： The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein an orientation ratio of the lattice plane {101} is not smaller than 20% and the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and an orientation ratio of the lattice plane {001} is not larger than 3% and the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and an orientation ratio of the lattice plane {001} is not larger than 5% and the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.
摘要翻译： TFT具有通过以以不小于0.1原子％但不大于10原子％的量将含有硅作为主要成分的非晶半导体膜和锗进行热处理和结晶而获得的晶体半导体膜形成的沟道形成区域，同时向其中添加金属元素，其中晶格面{101}的取向比不小于20％，并且晶格面{101}相对于半导体膜的表面具有不大于10度的角度，并且晶格面{001}的取向比不大于3％，晶格面{001}相对于半导体膜的表面具有不大于10度的角度，并且晶格的取向比平面{001}不大于5％，并且晶格面{111}相对于通过电子反向散射衍射图案法检测的半导体膜的表面具有不大于10度的角度。

84. 发明授权

US08570256B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US08570256B2
公开(公告)日：2013-10-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30 , H01L21/70
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

85. 发明授权

US08238152B2 Memory device and manufacturing method the same 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US08238152B2
公开(公告)日：2012-08-07
申请号：US12711333
申请日：2010-02-24
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G11C11/34 , G11C11/00 , H01L51/00
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

86. 发明申请

US20110291173A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110291173A1
公开(公告)日：2011-12-01
申请号：US13207450
申请日：2011-08-11
申请人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
发明人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
IPC分类号： H01L29/788
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.
摘要翻译：本发明提供一种半导体器件及其制造方法，其中在衬底上制造具有不同厚度的栅极绝缘膜的存储晶体管和多个薄膜晶体管。本发明的特征在于存储晶体管与多个薄膜晶体管之间的结构差异。具体地，存储晶体管和多个薄膜晶体管中的一些被设置为具有底栅结构，而另一个薄膜晶体管被设置为具有顶栅结构，这使得能够减小晶体管的特性缺陷并简化其制造工艺。

87. 发明申请

US20090001452A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090001452A1
公开(公告)日：2009-01-01
申请号：US12213727
申请日：2008-06-24
申请人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
发明人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.
摘要翻译：本发明提供一种半导体器件及其制造方法，其中在衬底上制造具有不同厚度的栅极绝缘膜的存储晶体管和多个薄膜晶体管。本发明的特征在于存储晶体管与多个薄膜晶体管之间的结构差异。具体地，存储晶体管和多个薄膜晶体管中的一些被设置为具有底栅结构，而另一个薄膜晶体管被设置为具有顶栅结构，这使得能够减小晶体管的特性缺陷并简化其制造工艺。

88. 发明授权

US07459379B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07459379B2
公开(公告)日：2008-12-02
申请号：US11089055
申请日：2005-03-25
申请人： Chiho Kokubo , Shunpei Yamazaki , Tamae Takano , Hiroaki Irie
发明人： Chiho Kokubo , Shunpei Yamazaki , Tamae Takano , Hiroaki Irie
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1277 , H01L27/3244 , H01L51/56 , H01L2227/326 , H01L2251/5315 , H01L2251/5323
摘要： When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a variation is caused among portions with strain and portions without strain, and a variation is caused also by a difference in extent of strain.According to the present invention, after laser light irradiation, an oxide film (referred to as a chemical oxide) is formed by using a solution containing ozone (typically, ozone water) to form an oxide film of 1 to 10 nm in total, and further, a heat treatment for reducing strain of a semiconductor film (a heat treatment of heating the semiconductor film instantaneously to approximately 400 to 1000° C.) is performed.
摘要翻译：当半导体膜被激光照射时，半导体膜瞬间熔化并局部膨胀。为了减少由该膨胀产生的内部应力，在半导体膜中局部产生应变。因此，在具有应变的部分和没有应变的部分之间引起变化，并且由应变程度的差异也引起变化。根据本发明，在激光照射之后，通过使用含有臭氧（通常为臭氧水）的溶液，形成总共1〜10nm的氧化膜，形成氧化物膜（以下称为化学氧化物），此外，进行用于减少半导体膜的应变的热处理（将半导体膜瞬间加热至约400〜1000℃的热处理）。

89. 发明授权

US07364954B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07364954B2
公开(公告)日：2008-04-29
申请号：US11410082
申请日：2006-04-25
申请人： Kazutaka Kuwashima , Tamae Takano , Shunpei Yamazaki
发明人： Kazutaka Kuwashima , Tamae Takano , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L27/1266 , H01L21/67207 , H01L27/1214
摘要： The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming a metal oxide film over the surface of the metal film by performing plasma treatment to the metal film in an atmosphere containing oxygen; forming a base film over the metal oxide film; forming an element layer having a thin film transistor over the base film; forming a protective layer over the element layer; forming an opening after selectively removing the metal film, the metal oxide film, the base film, the element layer, and the protective layer; separating the base film, the element layer, and the protective layer from the substrate; and sealing the base film, the element layer, and the protective layer by using flexible first and second films, in which an electron density of plasma around the substrate is 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of the plasma treatment is 0.5 eV or more and 1.5 eV or less.
摘要翻译：本发明以低成本，高可靠性提供半导体器件的制造方法。根据半导体器件的制造方法的一个特征，包括以下步骤：在衬底上形成金属膜; 通过在含氧的气氛中对金属膜进行等离子体处理，在金属膜的表面上形成金属氧化物膜; 在所述金属氧化物膜上形成基膜; 在所述基膜上形成具有薄膜晶体管的元件层; 在元件层上形成保护层; 在选择性地除去金属膜，金属氧化物膜，基膜，元件层和保护层之后形成开口; 从基板分离基膜，元件层和保护层; 并且通过使用柔性的第一和第二膜密封基膜，元件层和保护层，其中基板周围的等离子体的电子密度为1×10 11 cm -3， SUP以上且1×10 3 -3 -3以下，等离子体处理的电子温度为0.5eV以上至1.5eV以下。

90. 发明授权

US07307282B2 Thin film transistors and semiconductor device 有权
标题翻译：薄膜晶体管和半导体器件
公开(公告)号：US07307282B2
公开(公告)日：2007-12-11
申请号：US10727651
申请日：2003-12-05
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo , Yasuyuki Arai
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L29/66757 , H01L29/78684
摘要： The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.
摘要翻译： TFT具有通过以以不小于0.1原子％但不大于10原子％的量将含有硅作为主要成分的非晶半导体膜和锗进行热处理和结晶而获得的晶体半导体膜形成的沟道形成区域，同时向其中添加金属元素，其中不小于晶格面{101}的20％相对于半导体膜的表面具有不大于10度的角度，不大于晶格面{001 }相对于半导体膜的表面具有不大于10度的角度，并且不大于晶格面{111}的5％的角度相对于半导体的表面具有不大于10度的角度通过电子背散射衍射图法检测。

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