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81. 发明授权

US5448384A Active matrix liquid crystal display device having discharge elements connected between input terminals and common terminal 失效
标题翻译：有源矩阵液晶显示装置，其具有连接在输入端子和公共端子之间的放电元件
公开(公告)号：US5448384A
公开(公告)日：1995-09-05
申请号：US172272
申请日：1993-12-23
申请人： Katsuhide Uchino , Toshikazu Maekawa , Hiroaki Ichikawa
发明人： Katsuhide Uchino , Toshikazu Maekawa , Hiroaki Ichikawa
IPC分类号： G02F1/133 , G02F1/1345 , G02F1/136 , G02F1/1368 , G09G3/36 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3655 , G09G2310/0245 , G09G2310/063 , G09G2320/0204 , G09G2320/0219 , G09G2330/04
摘要： A liquid crystal display device of the active matrix type which prevents residual of charge in liquid crystal picture elements with respect to time. The active matrix liquid crystal display device includes liquid crystal picture elements formed from a liquid crystal layer held between picture element electrodes arranged in a matrix and common electrodes opposing to the picture element electrodes, and picture element transistors corresponding to the liquid crystal picture elements. While a predetermined reference potential is supplied to the common electrode, image signals are applied to the individual picture element electrodes by way of signal lines and picture element transistors to effect ac driving of the liquid crystal picture elements. Discharge means for connecting the common electrodes and the picture element electrodes to an equivalent potential to each other is provided to discharge the charge remaining in the liquid crystal picture elements thereby to prevent the variation of the reference potential.
摘要翻译：一种有源矩阵型的液晶显示装置，其防止相对于时间在液晶像素中残留电荷。有源矩阵液晶显示装置包括由保持在矩阵中排列的像素电极和与像素电极相对的公共电极之间的液晶层形成的液晶像元，以及与液晶像素相对应的像素晶体管。当向公共电极提供预定的参考电位时，通过信号线和像素晶体管将图像信号施加到各个像素电极，以实现液晶图像元件的交流驱动。设置用于将公共电极和像素电极彼此连接的等效电位的放电装置，以排出残留在液晶像素中的电荷，从而防止参考电位的变化。

82. 发明授权

US5073523A Dielectric ceramic composition 失效
标题翻译：电介质陶瓷组合物
公开(公告)号：US5073523A
公开(公告)日：1991-12-17
申请号：US578629
申请日：1990-09-06
申请人： Masayuki Yamada , Hiroaki Ichikawa , Tadashi Morimoto , Yasuyuki Naito , Hiroshi Takagi , Harufumi Mandai , Yukio Sakabe
发明人： Masayuki Yamada , Hiroaki Ichikawa , Tadashi Morimoto , Yasuyuki Naito , Hiroshi Takagi , Harufumi Mandai , Yukio Sakabe
IPC分类号： C04B35/46 , C04B35/47 , H01B3/12 , H01G4/12
CPC分类号： H01G4/129 , C04B35/47 , H01B3/12
摘要： A dielectric ceramic composition consists essentially of 80 to 99.7 wt % of a main component of a system, SrTiO.sub.3 -PbTiO.sub.3 -CaTiO.sub.3 -Bi.sub.2 O.sub.3 -TiO.sub.2 -SnO.sub.2, at least one oxide of rare earth elements incorporated therein as an additive in an amount of 0.1 to 5.0 wt % in terms of Re.sub.2 O.sub.3 (where Re is at least one rare element selected from the group consisting of Nd, La, Ce, Pr and Sm), and 0.2 to 15 wt % of a vitreous component. The main component consists essentially of 20.0 to 50.0 wt % of SrTiO.sub.3, 8.0 to 37.6 wt % of PbTiO.sub.3, 3.2 to 33.9 wt % of CaTiO.sub.3, 4.4 to 35.2 wt % of Bi.sub.2 O.sub.3, 2.5 to 13.6 wt % of TiO.sub.2 and 0.2 to 12.0 wt % of SnO.sub.2. The vitreous component consists essentially of 10 to 45 mol % of Li.sub.2 O, 5 to 40 mol % of at least one oxide selected from the group consisting of BaO, MgO, CaO and SrO, 0.2 to 10 mol % of Al.sub.2 O.sub.3, 30 to 70 mol % of at least two oxide selected from the group consisting of SiO.sub.2, MnO.sub.2 and TiO.sub.2, the content of SiO.sub.2 in the vitreous component being not less than 15 mol % at least, and 1 to 35 mol % of CuO.
摘要翻译：电介质陶瓷组合物基本上由80-99.7重量％的体系主要成分SrTiO3-PbTiO3-CaTiO3-Bi2O3-TiO2-SnO2组成，至少一种掺入其中的稀土元素氧化物作为添加剂的量为0.1 以Re 2 O 3（其中，Re为选自Nd，La，Ce，Pr和Sm中的至少一种稀有元素）为5.0重量％，以及0.2〜15重量％的玻璃质成分。主成分基本上由20.0〜50.0重量％的SrTiO 3，8.0〜37.6重量％的PbTiO 3，3.2〜33.9重量％的CaTiO 3，4.4〜35.2重量％的Bi 2 O 3，2.5〜13.6重量％的TiO 2和0.2〜12.0重量％％的SnO2。玻璃质成分基本上由10〜45摩尔％的Li 2 O，5〜40摩尔％的选自BaO，MgO，CaO和SrO中的至少一种氧化物，0.2〜10摩尔％的Al 2 O 3，30〜70摩尔％的至少两种选自SiO 2，MnO 2和TiO 2的氧化物，玻璃状组分中SiO 2的含量至少为15mol％以及1〜35mol％的CuO。

83. 发明授权

US4820670A Dielectric ceramic composition 失效
标题翻译：介电陶瓷组合物
公开(公告)号：US4820670A
公开(公告)日：1989-04-11
申请号：US125483
申请日：1987-11-25
申请人： Harunobu Sano , Hiroaki Ichikawa , Goro Nishioka , Yukio Sakabe
发明人： Harunobu Sano , Hiroaki Ichikawa , Goro Nishioka , Yukio Sakabe
IPC分类号： C04B35/47 , C04B35/46
CPC分类号： C04B35/47
摘要： A dielectric ceramic composition consists essentially of a main component of a SrTiO.sub.3 --PbTiO.sub.3 --Bi.sub.2 O.sub.3 --TiO.sub.2 --CaTiO.sub.3 system and secondary components of manganese oxides, at least one oxide of rare earth elements selected from the group consisting of Nd, La, Ce, Pr and Sm, and one of complex perovskite compounds expressed by the following general formula:A(Cu.sub.1/2 W.sub.1/2)O.sub.3(where A is at least one element selected from the group consisting of Pb, Sr and Ca),A(Cu.sub.1/3 Ta.sub.2/3)O.sub.3wherein A is at least one element selected from the group consisting of Pb, Sr and Ca), andA(Cu.sub.1/3 Nb.sub.2/3)O.sub.3(where A is at least one element selected from the group consisting of Pb, Sr and Ca). The main component consists essentially, by weight, of 19.5 to 42.8% of SrTiO.sub.3, 8.0 to 37.6% of PbTiO.sub.3, 4.2 to 33.9% of CaTiO.sub.3, 4.4 to 26.9% of Bi.sub.2 O.sub.3, 4.2 to 13.6% of TiO.sub.2 and 0.5 to 12% of SnO.sub.2. The contents of the secondary components per 100 parts by weight of the main component are 0.02 to 0.50 parts by weight for manganese oxide in terms of MnO.sub.2, 0.1 to 5.0 parts by weight for oxides of rare earth elements in terms of Re.sub.2 O.sub.3, and 0.1 to 5.0 parts by weight for the complex perovskite compound.
摘要翻译：电介质陶瓷组合物主要由SrTiO3-PbTiO3-Bi2O3-TiO2-CaTiO3体系的主要成分和锰氧化物的次要组分组成，至少一种稀土元素氧化物选自Nd，La，Ce，Pr 和Sm，以及由以下通式表示的复合钙钛矿化合物之一：（Cu1 / 2W1 / 2）O3（其中A为选自Pb，Sr和Ca中的至少一种元素），A（Cu1 / 3Ta2 / 3）O3，其中A是选自Pb，Sr和Ca中的至少一种元素）和A（Cu1 / 3Nb2 / 3）O3（其中A是选自Pb ，Sr和Ca）。主要成分基本上由重量百分比计为19.5〜42.8％的SrTiO3，8.0〜37.6％的PbTiO3，4.2〜33.9％的CaTiO3，4.4〜26.9％的Bi2O3，4.2〜13.6％的TiO2和0.5〜12％的 SnO2。相对于100重量份的主要成分，二次成分的含量相对于氧化锰为0.02〜0.50重量份，以MnO 2计，稀土类氧化物为Re 2 O 3为0.1〜5.0重量份，对于复合钙钛矿化合物为5.0重量份。

84. 发明授权

US4412237A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4412237A
公开(公告)日：1983-10-25
申请号：US143472
申请日：1980-08-29
申请人： Nobutake Matsumura , Ryusuke Hoshikawa , Yoshihide Sugiura , Hiroaki Ichikawa , Syoji Sato
发明人： Nobutake Matsumura , Ryusuke Hoshikawa , Yoshihide Sugiura , Hiroaki Ichikawa , Syoji Sato
IPC分类号： H01L21/822 , G11C5/06 , G11C11/412 , G11C11/417 , G11C11/418 , H01L21/82 , H01L27/04 , H01L27/118 , H01L29/78 , H03K3/356 , H01L27/02
CPC分类号： H01L27/11807 , G11C11/412 , G11C11/417 , G11C11/418 , G11C5/063 , H03K3/356104 , Y10S257/923
摘要： Disclosed is a semiconductor device having a large number of basic cells, wherein a plurality of basic cells arranged along rows of a semiconductor substrate form a basic cell array and a plurality of the basic cell arrays are arranged along columns of the substrate, and further including spaces formed between each adjoining column. Each basic cell is comprised of first and second P-channel MIS transistors and first and second N-channel MIS transistors. The gates of both the first P-channel and the first N-channel MIS transistors form a first single common gate, and the gates of both the second P-channel and the second N-channel MIS transistors form a second single common gate. The sources or the drains of both the first P-channel and the second P-channel MIS transistors form a first single common source or drain, and the sources or the drains of both the first N-channel and the second N-channel MIS transistors form a second single common source or drain. Each of the first and second single common gates has two terminal electrodes at both sides of respective basic cell array and a central terminal electrode at the center of the respective basic cell array. Further, each of the basic cells includes a small space extending between both sides of the basic cell array, which space can be utilized as a field for distributing, along a row, interconnecting lines.
摘要翻译： PCT No.PCT / JP78 / 00048 Sec。 371日期1979年8月29日第 102（e）日期1979年8月29日PCT提交1978年12月11日PCT公布。出版物WO79 / 00461 日期：1979年7月26日。公开是具有大量基本单元的半导体器件，其中沿着半导体衬底的行排列的多个基本单元形成基本单元阵列，并且多个基本单元阵列沿着列并且还包括在每个相邻的柱之间形成的空间。每个基本单元包括第一和第二P沟道MIS晶体管以及第一和第二N沟道MIS晶体管。第一P沟道和第一N沟道MIS晶体管的栅极形成第一单个公共栅极，并且第二P沟道和第二N沟道MIS晶体管的栅极形成第二单个公共栅极。第一P沟道和第二P沟道MIS晶体管的源极或漏极形成第一单个公共源极或漏极，并且第一N沟道和第二N沟道MIS晶体管的源极或漏极形成第二个单一的共同来源或渠道。第一和第二单个公共门中的每一个在各个基本单元阵列的两侧具有两个端子电极和位于各个基本单元阵列的中心的中心端子电极。此外，每个基本单元包括在基本单元阵列的两侧之间延伸的小空间，该空间可以用作沿着一行互连线分布的场。

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