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81. 发明授权

US07280313B2 High aspect ratio co-planar structure fabrication consisting of different materials 有权
标题翻译：高纵横比共面结构制造由不同材料组成
公开(公告)号：US07280313B2
公开(公告)日：2007-10-09
申请号：US10837386
申请日：2004-04-30
申请人： Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
发明人： Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
IPC分类号： G11B5/17 , G11B5/127
CPC分类号： G11B5/3163 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064
摘要： A a method for fabricating a structure, such as a magnetic head, having two coplanar metallic features of different compositions, both deposited on their own seed layers. The features may be made tall relative to their widths (ie. have a high aspect ratio), and are also very closely spaced. Only a single high-definition, critically aligned photolithographic procedure is used to create the critical structures, avoiding any problem with aligning features produced by multiple procedures. The method is applied to the production of the write structure of a magnetic read/write head, where a portion of the pole structure and the inductive coils are fabricated in the same plane with a close spacing and both having a vertical aspect ratio of more than about 2:1.
摘要翻译：一种用于制造具有不同组成的两个共面金属特征的结构（例如磁头）的方法，两者都沉积在它们自己的种子层上。特征可以相对于它们的宽度（即，具有高纵横比）而高，并且也非常紧密地间隔开。仅使用单一的高清晰度，严格对准的光刻过程来创建关键结构，避免了由多个过程产生的对准特征的任何问题。该方法被应用于磁读/写头的写结构的制造，其中极结构和感应线圈的一部分以相近的间距制造在相同的平面中，并且两者的垂直纵横比大于约2：1。

82. 发明授权

US07251103B2 Perpendicular pole having and adjacent non-magnetic CMP resistant structure 有权
标题翻译：垂直极具有和相邻的非磁性CMP抗磨结构
公开(公告)号：US07251103B2
公开(公告)日：2007-07-31
申请号：US10882507
申请日：2004-06-30
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/147
CPC分类号： G11B5/1278
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

83. 发明授权

US07248434B2 Planarized perpendicular pole tip system and method for manufacturing the same 失效
标题翻译：平面垂直极端系统及其制造方法
公开(公告)号：US07248434B2
公开(公告)日：2007-07-24
申请号：US10798163
申请日：2004-03-10
申请人： Frederick Hayes Dill , Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
发明人： Frederick Hayes Dill , Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , G11B5/3967 , Y10T29/49032
摘要： A method for manufacturing a pole tip structure for a magnetic head is provided. An etch stop layer is initially deposited after which a transfer layer is deposited. Further deposited is at least one masking layer. Reactive ion etching is then performed to define a trench in at least the transfer layer. A pole tip layer is then deposited in the trench to define a pole tip structure flanked at least in part by the transfer layer. A surface of the transfer layer or etch stop layer then remains in co-planar relationship with a surface of the pole tip structure.
摘要翻译：提供一种用于制造用于磁头的极尖结构的方法。最初沉积蚀刻停止层，之后沉积转移层。进一步沉积的是至少一个掩模层。然后执行反应离子蚀刻以在至少转移层中限定沟槽。然后将极尖层沉积在沟槽中以限定至少部分地由转移层侧面的极尖结构。然后转印层或蚀刻停止层的表面与极尖结构的表面保持共面关系。

84. 发明授权

US07230805B2 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 有权
标题翻译：具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤
公开(公告)号：US07230805B2
公开(公告)日：2007-06-12
申请号：US11036238
申请日：2005-01-13
申请人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/39 , H01L43/00
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译：一种半导体滑块，其包括设置在单片半导体上的读宽度为250nm或更小的整体自旋阀晶体管（SVT）。基板，可用于磁数据存储应用。单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。

85. 发明授权

US07200918B2 Method for forming an air bearing surface on a slider 失效
标题翻译：在滑块上形成空气轴承表面的方法
公开(公告)号：US07200918B2
公开(公告)日：2007-04-10
申请号：US10601982
申请日：2003-06-20
申请人： Jeffrey S. Lille
发明人： Jeffrey S. Lille
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/6005 , Y10T29/49027 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49798
摘要： Embodiments include a slider having a silicon body and at least one carbide pad structure embedded therein. At least one head structure for reading and/or writing data is located on the silicon body. The silicon body includes an air bearing surface on which the head is located. The air bearing surface also includes at least a portion of the carbide pad structure thereon. In one aspect, the metal carbide structure may be made from a material such as titanium carbide, zirconium carbide, vanadium carbide, tungsten carbide, or molybdenum carbide. In another aspect, the head may be located on the air bearing surface between carbide pad structures.
摘要翻译：实施例包括具有硅体和嵌入其中的至少一个碳化物垫结构的滑块。用于读取和/或写入数据的至少一个头部结构位于硅体上。硅体包括头部所在的空气支承表面。空气轴承表面还包括其上的碳化物垫结构的至少一部分。在一个方面，金属碳化物结构可以由诸如碳化钛，碳化锆，碳化钒，碳化钨或碳化钼的材料制成。在另一方面，头部可以位于碳化物垫结构之间的空气支承表面上。

86. 发明授权

US07170715B2 Microsuspension assemblies for direct access storage devices 有权
标题翻译：用于直接存取存储设备的微悬浮组件
公开(公告)号：US07170715B2
公开(公告)日：2007-01-30
申请号：US10789501
申请日：2004-02-27
申请人： Jeffrey S. Lille
发明人： Jeffrey S. Lille
IPC分类号： G11B21/16
CPC分类号： G11B5/4826 , G11B5/60 , Y10T29/49025 , Y10T29/4903 , Y10T29/49032 , Y10T29/49037 , Y10T29/49041 , Y10T29/49048 , Y10T29/49163 , Y10T29/49826
摘要： Embodiments include a method for forming a head suspension assembly. A spacer layer is formed in or on a silicon wafer. A transfer film including an opening defining the shape of a slider support membrane is provided, and the opening is filled with a resin material. The transfer film with the resin material therein is positioned over the silicon wafer so that at least a portion of the resin material is positioned adjacent to the spacer layer. The resin material is baked to form a glassy carbon material. The spacer layer is etched to form a trench in the silicon wafer adjacent to the glassy carbon material, and a slider is positioned on the glassy carbon material over the trench.
摘要翻译：实施例包括一种用于形成头部悬挂组件的方法。间隔层形成在硅晶片中或硅晶片上。提供了包括限定滑块支撑膜的形状的开口的转印膜，并且该开口填充有树脂材料。其中具有树脂材料的转移膜位于硅晶片上，使得至少一部分树脂材料邻近间隔层定位。将树脂材料烘烤以形成玻璃碳材料。蚀刻间隔层以在与硅玻璃材料相邻的硅晶片中形成沟槽，并且滑块位于沟槽上的玻璃碳材料上。

87. 发明授权

US06980395B2 Enhanced coplanar conductance structure for inductive heads 失效
标题翻译：感性头增强共面电导结构
公开(公告)号：US06980395B2
公开(公告)日：2005-12-27
申请号：US10284716
申请日：2002-10-31
申请人： Jeffrey S. Lille
发明人： Jeffrey S. Lille
IPC分类号： G11B5/17
CPC分类号： G11B5/17 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A high aspect ratio structure using topographical features to increase conformal coverage area provides high conductance. An insulation layer is disposed over a magnetic material. At least one trench is formed in the insulation layer to form a coil, where the at least one trench forms the coil with multiple coil windings. A plurality of topographical features is formed in at least one nonconfined area of the coil to increase conformal coverage area. A metal, such as copper, is deposited into the at least one trench and topographical features to form an inductive structure.
摘要翻译：使用地形特征增加适形覆盖面积的高纵横比结构提供高电导率。绝缘层设置在磁性材料上。在绝缘层中形成至少一个沟槽以形成线圈，其中至少一个沟槽形成具有多个线圈绕组的线圈。在线圈的至少一个非限制区域中形成多个形貌特征以增加适形覆盖区域。诸如铜的金属被沉积到至少一个沟槽和形貌特征中以形成感应结构。

88. 发明授权

US06947246B2 Large protrusion recording head for controlled magnetic spacing recording/reading 失效
公开(公告)号：US06947246B2
公开(公告)日：2005-09-20
申请号：US10652297
申请日：2003-08-29
申请人： Jeffrey S. Lille
发明人： Jeffrey S. Lille
IPC分类号： G11B5/127 , G11B5/147 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/596 , G11B21/02 , H04R31/00
CPC分类号： G11B5/3906 , G11B5/187 , G11B5/3106 , G11B5/3116 , G11B5/3133 , Y10T29/49021
摘要： A magnetic head structure having enhanced protrusion and having a first pole structure, a second pole structure forming a yoke with the fist pole, a coil structure disposed in the yoke, and a layer of partially cured polymer operatively coupled to the yoke. Also disclosed is a magnetic head having a first pole structure, a second pole structure forming a yoke with the fist pole, a coil structure disposed in the yoke, and a layer of at least partially insulative material operatively coupled to the read and/or write head for providing enhanced protrusion, the at least partially insulative material having a coefficient of thermal expansion higher than a coefficient of thermal expansion of fully cured hard bake novalac. Further embodiments include disk drive systems having the head structures described herein.

89. 发明授权

US06870717B2 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 失效
标题翻译：具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤
公开(公告)号：US06870717B2
公开(公告)日：2005-03-22
申请号：US10150189
申请日：2002-05-16
申请人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/10 , G11B5/31 , G11B5/33 , G11B5/39 , H01L29/82
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译：一种半导体滑块，其包括设置在单片半导体衬底上的读宽度为250nm或更小的整体自旋阀晶体管（SVT），可用于磁数据存储应用。单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。

90. 发明授权

US06683753B1 Metal carbide air bearing surface layer on a silicon read/write head element 失效
标题翻译：金属碳化物空气轴承表面层上的硅读/写头元件
公开(公告)号：US06683753B1
公开(公告)日：2004-01-27
申请号：US09378059
申请日：1999-08-20
申请人： Jeffrey S. Lille
发明人： Jeffrey S. Lille
IPC分类号： G11B560
CPC分类号： G11B5/6005 , Y10T29/49027 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49798
摘要： Embodiments include a slider having a silicon body and at least one carbide pad structure embedded therein. At least one head structure for reading and/or writing data is located on the silicon body. The silicon body includes an air bearing surface on which the head is located. The air bearing surface also includes at least a portion of the carbide pad structure thereon. In one aspect, the metal carbide structure may be made from a material such as titanium carbide, zirconium carbide, vanadium carbide, tungsten carbide, or molybdenum carbide. In another aspect, the head may be located on the air bearing surface between carbide pad structures.
摘要翻译：实施例包括具有硅体和嵌入其中的至少一个碳化物垫结构的滑块。用于读取和/或写入数据的至少一个头部结构位于硅体上。硅体包括头部所在的空气支承表面。空气轴承表面还包括其上的碳化物垫结构的至少一部分。在一个方面，金属碳化物结构可以由诸如碳化钛，碳化锆，碳化钒，碳化钨或碳化钼的材料制成。在另一方面，头部可以位于碳化物垫结构之间的空气支承表面上。

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