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    • 83. 发明申请
    • Method of forming minute pattern of semiconductor device
    • 形成半导体器件的微小图案的方法
    • US20060292497A1
    • 2006-12-28
    • US11475319
    • 2006-06-27
    • Jong Kim
    • Jong Kim
    • G03F7/26
    • H01L21/3086H01L21/3088
    • An embodiment of the invention provides a method of forming minute patterns of a semiconductor device. In one embodiment, after a first oxide film, a lower anti-reflection film, and a first photoresist film patterns are sequentially formed on a semiconductor substrate, the lower anti-reflection film and the first oxide film are etched using the first photoresist film patterns as a mask. After a nitride film is deposited on the entire structure, the nitride film is etched to form spacers on sidewalls of the first oxide film. A second oxide film is deposited on the entire structure and is then polished. A second photoresist film pattern is then formed on the entire structure. The nitride film is removed using the second photoresist film pattern as a mask to form oxide film patterns having a line of 100 nm and a space of 50 nm and a variety of patterns. According to an embodiment of the invention, a line of 50 nm and a space of 100 nm, or a line of 100 nm and a space pattern of 50 nm can be formed exceeding the limit of an ArF exposure apparatus by employing patterns in which the degree of process freedom and CD regularity of the pattern having the line of 100 nm and the space of 200 nm are improved. It is also possible to secure the CD regularity of the pattern.
    • 本发明的实施例提供了形成半导体器件的微小图案的方法。 在一个实施例中,在半导体衬底上依次形成第一氧化物膜,下部抗反射膜和第一光致抗蚀剂膜图案之后,使用第一光致抗蚀剂膜图案蚀刻下部抗反射膜和第一氧化物膜 作为面具。 在整个结构上沉积氮化物膜之后,蚀刻氮化物膜以在第一氧化物膜的侧壁上形成间隔物。 将第二氧化膜沉积在整个结构上,然后抛光。 然后在整个结构上形成第二光致抗蚀剂图案。 使用第二光致抗蚀剂膜图案作为掩模去除氮化物膜,以形成具有100nm线和50nm的空间的各种图案的氧化物膜图案。 根据本发明的实施例,可以通过采用图案来形成超过ArF曝光装置的极限的50nm线和100nm的线,或100nm的线和50nm的空间图, 具有100nm的线和200nm的空间的图案的工艺自由度和CD规则性得到改善。 也可以确保模式的CD规则性。
    • 90. 发明申请
    • Current cell and digital-to-analog converter using the same
    • 当前单元和数模转换器使用相同
    • US20060125670A1
    • 2006-06-15
    • US11253181
    • 2005-10-18
    • Min ChoSeung LeeChong KwonJong Kim
    • Min ChoSeung LeeChong KwonJong Kim
    • H03M1/66
    • H03M1/0863H03K17/04106H03M1/742
    • Provided are a current cell and digital-to-analog converter (DAC) using the same. The current cell includes a current source; a first transistor transmitting a current produced from the current source to a first output node based on a first signal; a second transistor transmitting a current produced from the current source to a second output node based on a second signal; a first capacitor coupled between a gate of the first transistor and the second output node; and a second capacitor coupled between a gate of the second transistor and the first output node. A current mode DAC can improve in dynamic performance by using a plurality of current cells each having the above-described configuration.
    • 提供了使用其的当前单元和数模转换器(DAC)。 当前单元包括电流源; 第一晶体管,基于第一信号将从电流源产生的电流传输到第一输出节点; 基于第二信号将从电流源产生的电流传输到第二输出节点的第二晶体管; 耦合在所述第一晶体管的栅极和所述第二输出节点之间的第一电容器; 以及耦合在所述第二晶体管的栅极和所述第一输出节点之间的第二电容器。 电流模式DAC可以通过使用具有上述配置的多个当前单元来改善动态性能。