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81. 发明授权

US07714330B2 Si nanowire substrate 有权
标题翻译： Si纳米线基板
公开(公告)号：US07714330B2
公开(公告)日：2010-05-11
申请号：US11889471
申请日：2007-08-14
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/04
CPC分类号： H01L29/78654 , H01L29/0673 , H01L29/66772 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/938 , Y10T428/26
摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：具有其中在衬底上形成具有细线宽度的硅纳米线膜的结构的硅纳米线衬底，其制造方法以及使用其制造薄膜晶体管的方法。制造硅纳米线基板的方法包括：准备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图形化成带状，减小线宽通过对绝缘膜的至少一个侧面进行底切蚀刻来绝缘膜，并且通过使硅膜熔化和结晶，在绝缘膜的上表面上形成自对准硅纳米线膜。

82. 发明申请

US20100112763A1 Semiconductor device including gate stack formed on inclined surface and method of fabricating the same 有权
标题翻译：包括在倾斜表面上形成的栅叠层的半导体器件及其制造方法
公开(公告)号：US20100112763A1
公开(公告)日：2010-05-06
申请号：US12654866
申请日：2010-01-07
申请人： Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
发明人： Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L21/336
CPC分类号： H01L21/823412 , H01L21/823456 , H01L21/823807 , H01L21/82385
摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.
摘要翻译：半导体器件包括晶体管。晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。栅极堆叠结构形成在倾斜表面上并且包括栅电极。形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。形成在第二上表面上的第二杂质区域接触栅堆叠结构。第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。

83. 发明授权

US07557411B2 Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same 有权
标题翻译：半导体绝缘体上的结构，使用其的半导体器件及其制造方法
公开(公告)号：US07557411B2
公开(公告)日：2009-07-07
申请号：US11397866
申请日：2006-04-05
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin , Xiaoxin Zhang
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L27/01 , H01L27/12 , H01L31/392
CPC分类号： H01L29/78687 , H01L29/66742 , H01L29/78603
摘要： Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.
摘要翻译：绝缘体上半导体（SOI）结构，使用其的半导体器件及其制造方法，更具体地说，涉及在绝缘层上具有单晶（例如锗（x-Ge））层的结构，使用其的半导体器件及其制造方法。 SOI结构可以包括由第一半导体材料形成的单晶衬底，形成在衬底上的第一绝缘层，并且具有暴露衬底的一部分的至少一个窗口，形成在衬底表面上的第一外延生长区域由窗口露出并由第一半导体材料和第二半导体材料中的至少一个形成，以及形成在第一绝缘层和第一外延生长区上并由第二半导体材料形成的第一单晶层，并且晶化使用第一外延生长区域的表面作为晶种层进行结晶。

84. 发明申请

US20080191247A1 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
标题翻译：具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法
公开(公告)号：US20080191247A1
公开(公告)日：2008-08-14
申请号：US12007037
申请日：2008-01-04
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L21/8239 , H01L27/105 , H01L29/68
CPC分类号： H01L27/0688 , H01L21/8221 , H01L27/11521 , H01L27/11551 , H01L29/7854
摘要： A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.
摘要翻译：提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。该器件可以包括从半导体衬底向上突出的活性鳍片。可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。至少一个第一控制栅极线可以在有源鳍上交叉。层间绝缘层可以形成在至少一个第一控制栅极线上。多晶硅鳍可以形成在层间介电层上。可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

85. 发明申请

US20080038862A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20080038862A1
公开(公告)日：2008-02-14
申请号：US11819386
申请日：2007-06-27
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans Cho
IPC分类号： H01L21/64 , H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

86. 发明授权

US07297615B2 Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
公开(公告)号：US07297615B2
公开(公告)日：2007-11-20
申请号：US11341519
申请日：2006-01-30
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： C30B1/02 , H01L21/20
CPC分类号： H01L29/78654 , H01L29/0673 , H01L29/66772 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/938 , Y10T428/26
摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

87. 发明申请

US20070246802A1 Semiconductor device and methods thereof 有权
标题翻译：半导体器件及其方法
公开(公告)号：US20070246802A1
公开(公告)日：2007-10-25
申请号：US11702624
申请日：2007-02-06
申请人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02516 , H01L21/02532
摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
摘要翻译：半导体器件及其方法。示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层，第一层，第二层和第三层各自相对于多个晶面之一高度取向。示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层第三层各自相对于多个晶面之一高度取向。

88. 发明申请

US20060144323A1 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same 有权
公开(公告)号：US20060144323A1
公开(公告)日：2006-07-06
申请号：US11311228
申请日：2005-12-20
申请人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans Cho , Huaxiang Yin
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/26506 , H01L21/268 , H01L21/32134 , H01L21/76254 , H01L21/76256 , H01L27/1214 , H01L27/1266 , H01L29/04 , H01L29/66757 , H01L29/66772
摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.

89. 发明申请

US20060134894A1 Method of manufacturing polycrystalline Si film and manufacturing stacked transistor using the same 有权
标题翻译：制造多晶Si膜的方法和使用其制造堆叠晶体管
公开(公告)号：US20060134894A1
公开(公告)日：2006-06-22
申请号：US11283874
申请日：2005-11-22
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.
摘要翻译：提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线，形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

90. 发明申请

US20060068507A1 Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
标题翻译：形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法
公开(公告)号：US20060068507A1
公开(公告)日：2006-03-30
申请号：US11233363
申请日：2005-09-23
申请人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L21/02356 , H01L21/02197 , H01L21/31691 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.
摘要翻译：提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以在低于约500℃至约550℃的温度下形成。

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