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    • 83. 发明申请
    • Method for making magnetic write head
    • 磁头写入方法
    • US20070017087A1
    • 2007-01-25
    • US11186174
    • 2005-07-21
    • Daniel BedellAron PentekKatalin PentekYi Zheng
    • Daniel BedellAron PentekKatalin PentekYi Zheng
    • G11B5/127
    • G11B5/3163Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49046Y10T29/49052
    • After defining the P2 pole of a magnetic read head, alumina is deposited over it and planarized by CMP, with the portion of the alumina overlaying the ABS region of the P2 pole subsequently being masked by a photoresist layer and with the portions of the alumina overlaying the flare area, back gap region, and center tap regions of the P2 pole not being masked. A reactive ion mill is performed to expose the flare area, back gap region, and center tap regions of the P2 pole by removing the alumina over these portions, so that subsequent steps such as forming a layer of coiled conductors, forming a return pole, and forming stud connections along with removing the respective seed layers can be executed with the ABS region protected by the alumina and with the flare area, back gap region, and center tap region exposed.
    • 在定义磁读头的P2极之后,将氧化铝沉积在其上并通过CMP平坦化,其中覆盖P2极的ABS区域的氧化铝的部分随后被光致抗蚀剂层掩蔽,并且氧化铝的部分覆盖 P2极的光斑区域,背隙区域和中心抽头区域不被掩蔽。 通过在这些部分上除去氧化铝,进行反应离子磨,以暴露P2极的火炬区域,后隙区域和中心抽头区域,从而形成后续步骤,例如形成线圈导体层,形成返回极, 并且可以利用由氧化铝保护的ABS区域和暴露的火炬区域,后隙区域和中心抽头区域来执行形成螺柱连接以及移除相应的种子层。
    • 86. 发明申请
    • Recessed SiO2 or Si3N4 overcoat for GMR head in magnetic disk drive
    • 用于磁盘驱动器中的GMR磁头的嵌入式SiO2或Si3N4外涂层
    • US20050264949A1
    • 2005-12-01
    • US10857036
    • 2004-05-28
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • Yunxiao GaoAron PentekAlan TamSue Zhang
    • G11B5/127G11B5/31G11B5/33
    • G11B5/3136G11B5/3106G11B5/3133G11B5/3163Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49048Y10T29/49052
    • A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.
    • 巨磁阻(GMR)磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数(CTE)小于通常用于外涂层的氧化铝。 结果,当头部与通过的空气流的摩擦加热时,外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷,其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层,以准备对具有要形成凹部的开口镀金属掩模层,通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除,可以通过反应离子蚀刻(RIE)工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触,从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。