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81. 发明申请

US20120326156A1 Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus 审中-公开
标题翻译：有机发光显示装置及制造有机发光显示装置的方法
公开(公告)号：US20120326156A1
公开(公告)日：2012-12-27
申请号：US13200750
申请日：2011-09-30
申请人： Jong-Hyun Choi , Jae-Beom Choi
发明人： Jong-Hyun Choi , Jae-Beom Choi
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L27/3258 , H01L27/1259 , H01L27/1288 , H01L27/3246 , H01L27/3248 , H01L27/326 , H01L27/3265 , H01L51/5215 , H01L2227/323
摘要： An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the drain electrode, a second insulating film between the first insulating film and the source electrode and between the first insulating film and the drain electrode, the second insulating film including an opening, a first electrode between the first insulating film and the second insulating film, the first electrode including a region corresponding to the opening of the second insulating film, an intermediate layer including an organic light-emitting layer, and a second electrode on the intermediate layer.
摘要翻译：一种有机发光显示装置，包括基板，在基板上的薄膜晶体管（TFT），具有有源层的TFT，栅电极，源电极和漏电极，栅极之间的第一绝缘膜电极和源电极之间以及栅电极和漏电极之间的第二绝缘膜，第一绝缘膜和源电极之间以及第一绝缘膜和漏电极之间的第二绝缘膜，第二绝缘膜包括开口，第一电极在第一绝缘膜和第二绝缘膜之间，第一电极包括对应于第二绝缘膜的开口的区域，包括有机发光层的中间层和中间层上的第二电极。

82. 发明授权

US08174012B2 Organic light emitting diode display device and method of manufacturing the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08174012B2
公开(公告)日：2012-05-08
申请号：US11935670
申请日：2007-11-06
申请人： Jong-Hyun Choi , Kyung-Jin Yoo
发明人： Jong-Hyun Choi , Kyung-Jin Yoo
IPC分类号： H01L29/04
CPC分类号： H01L27/1277 , H01L27/1255 , H01L27/1296 , H01L27/3244 , H01L27/3265 , H01L27/3276 , H01L51/0021
摘要： An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.
摘要翻译：一种具有均匀电特性的有机发光二极管显示装置（OLED显示装置）及其制造方法。 OLED显示装置包括：基板; 设置在所述衬底上的半导体层，并且包括源区和漏区以及使用金属诱导横向结晶（MILC）形成的沟道区; 用于使所述半导体层电绝缘的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 用于使所述栅电极电绝缘的层间绝缘层; 包括电连接到半导体层的源极和漏极区域的源极和漏极的薄膜晶体管（TFT）; 用于电容器的第一电极，设置在与TFT间隔开并且使用金属诱导结晶（MIC）形成的基板的区域上; 所述栅极绝缘层用于使所述第一电容器电极电绝缘; 用于设置在栅极绝缘层上的电容器的第二电极; 设置在TFT和电容器上的平坦化层; 设置在所述平坦化层上的第一电极; 设置在所述第一电极上的像素限定层; 设置在所述第一电极和所述像素限定层上的有机层，并且至少包括发光层; 以及设置在有机层上的第二电极。

83. 发明授权

US08134152B2 CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a NMOS oxide thin film transistor with an inverted staggered bottom gate configuration 有权
标题翻译： CMOS薄膜晶体管，其制造方法和具有顶栅配置的层叠PMOS多晶硅薄膜晶体管和具有倒置交错底栅结构的NMOS氧化物薄膜晶体管的有机发光显示装置
公开(公告)号：US08134152B2
公开(公告)日：2012-03-13
申请号：US12686550
申请日：2010-01-13
申请人： Jong-Hyun Choi , Sung-Ho Kim
发明人： Jong-Hyun Choi , Sung-Ho Kim
IPC分类号： H01L29/12
CPC分类号： H01L27/12 , H01L27/0688 , H01L27/1225 , H01L27/1251 , H01L29/7869
摘要： A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.
摘要翻译：一种CMOS薄膜晶体管装置，其包括具有顶栅配置的PMOS多晶硅薄膜晶体管和具有倒置交错底栅结构的NMOS氧化物薄膜晶体管，其中两个晶体管共享相同的栅电极。在形成多晶硅晶体管的源极和漏极区域中，共享栅电极用作掺杂或注入掩模。

84. 发明申请

US20110278615A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110278615A1
公开(公告)日：2011-11-17
申请号：US13069346
申请日：2011-03-22
申请人： Dae-Hyun No , Jong-Hyun Choi , Gun-Shik Kim , June-Woo Lee
发明人： Dae-Hyun No , Jong-Hyun Choi , Gun-Shik Kim , June-Woo Lee
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/3248 , H01L27/1248 , H01L27/1255 , H01L27/3246 , H01L29/4908 , H01L51/5215 , H01L51/5265 , H01L51/56 , H01L2227/323
摘要： An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.
摘要翻译：提供了一种有机发光显示装置及其制造方法，由此可以简化制造工艺并提高显示质量。显示装置包括：在衬底上并包括半导体材料的薄膜晶体管（TFT）的有源层; 电容器的下电极，在衬底上，掺杂有离子杂质，并且包括半导体材料; 在所述基板上的第一绝缘层，以覆盖所述有源层和所述下电极; TFT的栅电极，位于第一绝缘层上; 第一绝缘层上的像素电极; 电容器的上电极，位于第一绝缘层上; 电连接到有源层的TFT的源极和漏极; 像素电极上的有机层，并且包括有机发光层; 面对像素电极的对置电极，对置电极和像素电极之间的有机层。

85. 发明授权

US07923735B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07923735B2
公开(公告)日：2011-04-12
申请号：US12461193
申请日：2009-08-04
申请人： Ki-Nyeng Kang , Chul-Kyu Kang , Jong-Hyun Choi
发明人： Ki-Nyeng Kang , Chul-Kyu Kang , Jong-Hyun Choi
IPC分类号： H01L21/84 , H01L29/12
CPC分类号： H01L29/7869
摘要： A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
摘要翻译： TFT包括在基板上的基板，源电极和漏电极，源电极和漏电极彼此分离，源电极和漏电极之间的基板上的有源层，在源电极和漏电极的侧表面上的包层单元源电极和漏电极，衬底上的栅极绝缘层，与有源层和包层单元重叠的栅极绝缘层，以及栅极绝缘层上的栅电极，栅电极与有源层重叠。

86. 发明授权

US07710807B2 Sense amplifiers having MOS transistors therein with different threshold voltages and/or that support different threshold voltage biasing 有权
标题翻译：具有其中具有不同阈值电压的MOS晶体管和/或支持不同阈值电压偏置的感测放大器
公开(公告)号：US07710807B2
公开(公告)日：2010-05-04
申请号：US12021762
申请日：2008-01-29
申请人： Hyun-Seok Lee , Jong-Hyun Choi , Ki-Chul Chun , Jong-Eon Lee
发明人： Hyun-Seok Lee , Jong-Hyun Choi , Ki-Chul Chun , Jong-Eon Lee
IPC分类号： G11C7/02
CPC分类号： G11C7/065 , G11C11/406 , G11C11/4091 , G11C2211/4065
摘要： A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type is configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.
摘要翻译：感测放大器包括一对感测位线和第一和第二MOS读出放大器。第一MOS读出放大器在其中具有第一导电类型的第一对MOS晶体管，其电耦合在该对感测位线之间。该电耦合被提供为使得第一对MOS晶体管中的每一个具有电连接到该对感测位线中的相应一个和第一对MOS晶体管的第二源极/漏极端子的第一源极/漏极端子电连接在一起。第一导电类型的第一对MOS晶体管被配置为具有不同的阈值电压或支持不同的阈值电压偏置。第二MOS读出放大器具有第一对第二导电类型的MOS晶体管，它们在一对感测位线之间电耦合。

87. 发明授权

US07659185B2 Method for forming silicon thin-film on flexible metal substrate 失效
标题翻译：在柔性金属基板上形成硅薄膜的方法
公开(公告)号：US07659185B2
公开(公告)日：2010-02-09
申请号：US10570285
申请日：2004-09-02
申请人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
发明人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。在金属基板（110）上形成绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

88. 发明申请

US20100013745A1 ORGANIC LIGHT EMITTING DISPLAY DEVICE 有权
标题翻译：有机发光显示装置
公开(公告)号：US20100013745A1
公开(公告)日：2010-01-21
申请号：US12409375
申请日：2009-03-23
申请人： Young-Dae Kim , Jong-Hyun Choi , Choong-Youl Im , Il-Jeong Lee
发明人： Young-Dae Kim , Jong-Hyun Choi , Choong-Youl Im , Il-Jeong Lee
IPC分类号： G09G3/30
CPC分类号： G06F3/0412 , G06F3/044 , G06F2203/04111 , H01L27/323 , H01L27/3244 , H01L2251/308 , H01L2251/5338 , H01L2251/5392
摘要： An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.
摘要翻译：一种具有静电电容型触摸面板功能的有机发光显示装置，具有减小的厚度和改善的亮度。有机发光显示装置的显示面板包括基板，在基板上具有多个像素的显示单元和显示单元上的触摸感测单元。触摸感测单元包括封装基板和位于封装基板的面向显示单元的一侧的电容图案层。电容图案层具有对应于多个像素的位置的多个开口。

89. 发明申请

US20080246037A1 Flat display device and method of manufacturing the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20080246037A1
公开(公告)日：2008-10-09
申请号：US11898506
申请日：2007-09-12
申请人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
发明人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/124
摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.
摘要翻译：提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

90. 发明申请

US20080164477A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和包括其的平板显示器件
公开(公告)号：US20080164477A1
公开(公告)日：2008-07-10
申请号：US11971191
申请日：2008-01-08
申请人： Jong-Hyun Choi
发明人： Jong-Hyun Choi
IPC分类号： H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L29/78675 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L2029/7863
摘要： A thin film transistor, a method of fabricating the same, and a flat panel display device including the same, are provided. According to the method, low resistance regions and high resistance regions can be manufactured through one doping process. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate and including source and drain regions, high resistance regions smaller than the source and drain regions, a channel region, and connection regions disposed between the high resistance regions and the channel region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer above the channel region; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions, respectively.
摘要翻译：提供薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。根据该方法，可以通过一个掺杂工艺制造低电阻区域和高电阻区域。薄膜晶体管包括：基板; 设置在所述基板上并且包括源极和漏极区域的半导体层，小于所述源极和漏极区域的高电阻区域，沟道区域和设置在所述高电阻区域和所述沟道区域之间的连接区域; 设置在所述半导体层上的栅极绝缘层; 设置在所述沟道区域上方的所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并分别与源极和漏极区电连接的源极和漏极。

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