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1. 发明申请

US20080277666A1 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的有机发光显示装置以及有机发光显示装置的制造方法
公开(公告)号：US20080277666A1
公开(公告)日：2008-11-13
申请号：US12149580
申请日：2008-05-05
申请人： Hee-Chul Jeon , Chul-Kyu Kang , Woo-Sik Jun , Jong-Hyun Choi
发明人： Hee-Chul Jeon , Chul-Kyu Kang , Woo-Sik Jun , Jong-Hyun Choi
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/3244 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/41733
摘要： A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.
摘要翻译：薄膜晶体管（TFT）可以包括衬底，衬底上的栅极电极，栅电极上的栅极绝缘层和栅极绝缘层上的半导体层。半导体层可以包括顶表面，在垂直方向上与栅极电极对准的沟道区域，靠近沟道区域的多个掺杂区域以及多个非掺杂区域。源电极和漏电极可以在半导体层的顶表面上对准半导体层的多个非掺杂区域中的相应一个上方。平坦化层可以在栅极绝缘层，源极和漏极以及半导体层沟道区上，并且可以包括分别暴露半导体层的多个掺杂区域和源电极的一部分的多个开口和漏电极。

2. 发明申请

US20080246029A1 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的有机发光显示装置以及有机发光显示装置的制造方法
公开(公告)号：US20080246029A1
公开(公告)日：2008-10-09
申请号：US12076048
申请日：2008-03-13
申请人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
发明人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L51/52 , H01L29/786 , H01L51/56
CPC分类号： H01L29/41733 , H01L27/12 , H01L27/124 , H01L27/3244
摘要： A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.
摘要翻译：例如，用于有机发光显示器的薄膜晶体管可以包括：栅极绝缘层，设置在位于衬底上的栅电极上; 半导体层，设置在所述栅极绝缘层上; 以及设置在所述栅极绝缘层，所述源极和漏极以及所述沟道区上的平坦化层，并且具有分别暴露所述第一源极和漏极区域以及所述源极和漏极的部分的开口。半导体层可以包括：对应于栅电极的沟道区; 在沟道区域外掺杂杂质的第一源区和漏区; 第二源和漏区，包括金属，在第一源和漏区外; 以及设置在第二源极和漏极区域上并且暴露第一源极和漏极区域的源极和漏极电极。像素电极可以设置在其中一个开口中。

3. 发明授权

US08299470B2 Flat display device and method of manufacturing the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US08299470B2
公开(公告)日：2012-10-30
申请号：US11898506
申请日：2007-09-12
申请人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
发明人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/124
摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.
摘要翻译：提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

4. 发明授权

US07968870B2 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的有机发光显示装置以及有机发光显示装置的制造方法
公开(公告)号：US07968870B2
公开(公告)日：2011-06-28
申请号：US12076048
申请日：2008-03-13
申请人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
发明人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L51/52
CPC分类号： H01L29/41733 , H01L27/12 , H01L27/124 , H01L27/3244
摘要： A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.
摘要翻译：例如，用于有机发光显示器的薄膜晶体管可以包括：栅极绝缘层，设置在位于衬底上的栅电极上; 半导体层，设置在所述栅极绝缘层上; 以及设置在所述栅极绝缘层，所述源极和漏极以及所述沟道区上的平坦化层，并且具有分别暴露所述第一源极和漏极区域以及所述源极和漏极的部分的开口。半导体层可以包括：对应于栅电极的沟道区; 在沟道区域外掺杂杂质的第一源区和漏区; 第二源和漏区，包括金属，在第一源和漏区外; 以及设置在第二源极和漏极区域上并且暴露第一源极和漏极区域的源极和漏极电极。像素电极可以设置在其中一个开口中。

5. 发明授权

US07928439B2 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的有机发光显示装置以及有机发光显示装置的制造方法
公开(公告)号：US07928439B2
公开(公告)日：2011-04-19
申请号：US12149580
申请日：2008-05-05
申请人： Hee-Chul Jeon , Chul-Kyu Kang , Woo-Sik Jun , Jong-Hyun Choi
发明人： Hee-Chul Jeon , Chul-Kyu Kang , Woo-Sik Jun , Jong-Hyun Choi
IPC分类号： H01L29/04
CPC分类号： H01L27/3244 , H01L27/124 , H01L27/1248 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/41733
摘要： A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.
摘要翻译：薄膜晶体管（TFT）可以包括衬底，衬底上的栅极电极，栅电极上的栅极绝缘层和栅极绝缘层上的半导体层。半导体层可以包括顶表面，在垂直方向上与栅极电极对准的沟道区域，靠近沟道区域的多个掺杂区域以及多个非掺杂区域。源电极和漏电极可以在半导体层的顶表面上对准半导体层的多个非掺杂区域中的相应一个上方。平坦化层可以在栅极绝缘层，源极和漏极以及半导体层沟道区上，并且可以包括分别暴露半导体层的多个掺杂区域和源电极的一部分的多个开口漏电极。

6. 发明申请

US20080246037A1 Flat display device and method of manufacturing the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20080246037A1
公开(公告)日：2008-10-09
申请号：US11898506
申请日：2007-09-12
申请人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
发明人： Chul-Kyu Kang , Jong-Hyun Choi , Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/124
摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.
摘要翻译：提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

7. 发明申请

US20110049502A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110049502A1
公开(公告)日：2011-03-03
申请号：US12941253
申请日：2010-11-08
申请人： Woo-Sik JUN , Hee-Chul Jeon
发明人： Woo-Sik JUN , Hee-Chul Jeon
IPC分类号： H01L51/44
CPC分类号： H01L27/3248 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L29/4908 , H01L2227/323
摘要： An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a pixel defining layer disposed on the substrate to cover the first electrode, the second electrode, the semiconductor layer, and the pixel electrode, the pixel defining layer including an opening through which the pixel electrode is partially exposed; an organic light-emitting layer disposed on the pixel electrode exposed through the opening; and an opposite electrode covering the organic light-emitting layer.
摘要翻译：有机发光显示装置包括：基板; 设置在所述基板上的栅电极，所述栅电极包括金属氧化物层的第一部分和金属层; 像素电极，设置在所述基板上以与所述栅电极绝缘，所述像素电极包括所述金属氧化物层的第二部分; 栅极绝缘层，设置在所述基板上以覆盖所述栅电极; 设置在所述栅极绝缘层上的半导体层，所述半导体层包括与所述栅电极对应的沟道区，以及设置在所述沟道区的外侧的第一和第二区; 连接到半导体层的第一区域的第一电极; 连接到半导体层的第二区域和像素电极的第二电极; 设置在半导体层的第一区域和第一电极之间以及半导体层的第二区域和第二电极之间的欧姆接触层; 所述像素限定层设置在所述基板上以覆盖所述第一电极，所述第二电极，所述半导体层和所述像素电极，所述像素限定层包括所述像素电极部分地露出的开口; 设置在通过所述开口暴露的所述像素电极上的有机发光层; 和覆盖有机发光层的相对电极。

8. 发明授权

US08013341B2 Organic light-emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US08013341B2
公开(公告)日：2011-09-06
申请号：US12941253
申请日：2010-11-08
申请人： Woo-Sik Jun , Hee-Chul Jeon
发明人： Woo-Sik Jun , Hee-Chul Jeon
IPC分类号： H01L29/04
CPC分类号： H01L27/3248 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L29/4908 , H01L2227/323
摘要： An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate and including a second portion of the metal oxide layer; a gate insulating layer covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and including a channel region, and first and second regions disposed outside the channel region; a first electrode connected to the first region; a second electrode connected to the second region and the pixel electrode; an ohmic contact layer disposed between the first region and the first electrode and between the second region and the second electrode; a pixel defining layer including an opening exposing the pixel electrode; an organic light-emitting layer disposed on the pixel electrode; and an opposite electrode covering the organic light-emitting layer.
摘要翻译：有机发光显示装置包括：基板; 设置在所述基板上的栅电极，所述栅电极包括金属氧化物层的第一部分和金属层; 设置在所述基板上并且包括所述金属氧化物层的第二部分的像素电极; 覆盖栅电极的栅极绝缘层; 设置在栅极绝缘层上并包括沟道区的半导体层，以及设置在沟道区外的第一和第二区; 连接到所述第一区域的第一电极; 连接到第二区域和像素电极的第二电极; 设置在所述第一区域和所述第一电极之间以及所述第二区域和所述第二电极之间的欧姆接触层; 像素限定层，包括露出像素电极的开口; 设置在像素电极上的有机发光层; 和覆盖有机发光层的相对电极。

9. 发明申请

US20080284326A1 Organic light emitting diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20080284326A1
公开(公告)日：2008-11-20
申请号：US12152601
申请日：2008-05-14
申请人： Jong-Hyun Choi , Kyung-Jin Yoo , Hee-Chul Jeon
发明人： Jong-Hyun Choi , Kyung-Jin Yoo , Hee-Chul Jeon
IPC分类号： H01J1/62 , H01L51/52 , H01L51/56
CPC分类号： H01L27/3248 , H01L51/5212 , H01L51/5218 , H01L2251/5315
摘要： Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置，包括：基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层，彼此隔开一段距离，并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极，并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

10. 发明授权

US07994706B2 Organic light emitting diode display device and method of fabricating the same 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US07994706B2
公开(公告)日：2011-08-09
申请号：US12152601
申请日：2008-05-14
申请人： Jong-Hyun Choi , Kyung-Jin Yoo , Hee-Chul Jeon
发明人： Jong-Hyun Choi , Kyung-Jin Yoo , Hee-Chul Jeon
IPC分类号： H01L51/00
CPC分类号： H01L27/3248 , H01L51/5212 , H01L51/5218 , H01L2251/5315
摘要： Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置，包括：基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层，彼此隔开一段距离，并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极，并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

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