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81. 发明授权

US5637909A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5637909A
公开(公告)日：1997-06-10
申请号：US581939
申请日：1996-01-02
申请人： Hiroomi Nakajima , Yasuhiro Katsumata , Hiroshi Iwai , Toshihiko Iinuma , Kazumi Inou , Mitsuhiko Kitagawa , Kouhei Morizuka , Akio Nakagawa , Ichiro Omura
发明人： Hiroomi Nakajima , Yasuhiro Katsumata , Hiroshi Iwai , Toshihiko Iinuma , Kazumi Inou , Mitsuhiko Kitagawa , Kouhei Morizuka , Akio Nakagawa , Ichiro Omura
IPC分类号： H01L21/331 , H01L27/12 , H01L29/73 , H01L29/786 , H01L21/76
CPC分类号： H01L29/66265 , H01L27/1203 , H01L29/66242 , H01L29/7317 , H01L29/78654
摘要： A bipolar transistor is formed on a silicon substrate having a silicon oxide film. An n-silicon layer having a top surface of a (100) plane is formed on the silicon oxide film and is used as a collector layer. An end face constituted by a (111) plane is formed on the end portion of the collector layer by etching, using an aqueous KOH solution. A B-doped p-silicon layer is formed on the end face by epitaxial growth and is used as a base layer. Furthermore, an As-doped n-silicon layer is formed on the base layer and is used as an emitter layer. Electrodes are respectively connected to the collector, base, and emitter layers.
摘要翻译：在具有氧化硅膜的硅衬底上形成双极晶体管。在氧化硅膜上形成具有（100）面的顶面的n型硅层，作为集电体层使用。使用KOH水溶液通过蚀刻在集电体层的端部上形成由（111）面构成的端面。通过外延生长在端面上形成B掺杂的p硅层，并用作基底层。此外，在基极层上形成As掺杂的n硅层，并用作发射极层。电极分别连接到集电极，基极和发射极层。

82. 发明授权

US4755863A Semiconductor device having a semiconductor substrate with a high impurity concentration 失效
标题翻译：具有杂质浓度高的半导体衬底的半导体器件
公开(公告)号：US4755863A
公开(公告)日：1988-07-05
申请号：US895599
申请日：1986-08-15
申请人： Satoshi Maeda , Hiroshi Iwai
发明人： Satoshi Maeda , Hiroshi Iwai
IPC分类号： H01L21/20 , H01L21/268 , H01L21/762 , H01L29/78 , H01L27/12 , H01L29/04 , H01L29/06
CPC分类号： H01L21/76294 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/02639 , H01L21/268
摘要： A high-performance, high-integration, and a highly reliable semiconductor device has a semiconductor substrate, an element isolation layer of an insulating material which is formed on the semiconductor substrate, a monocrystalline semiconductor layer formed on the portion of the semiconductor substrate and isolated from the element isolation layer, and a semiconductor element formed in the monocrystalline semiconductor layer. The impurity concentration of at least the surface region of the semiconductor substrate which is covered with the element isolation layer is not less than 10.sup.16 /cm.sup.3.
摘要翻译：高性能，高集成度和高可靠性的半导体器件具有半导体衬底，形成在半导体衬底上的绝缘材料的元件隔离层，形成在半导体衬底部分上并分离的单晶半导体层从元件隔离层和形成在单晶半导体层中的半导体元件。被元件隔离层覆盖的至少半导体衬底的表面区域的杂质浓度不小于1016 / cm3。

83. 发明授权

US4532701A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4532701A
公开(公告)日：1985-08-06
申请号：US410083
申请日：1982-08-19
申请人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
发明人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76
CPC分类号： H01L21/763 , H01L21/76229 , Y10S148/02 , Y10S148/05 , Y10S148/085
摘要： A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.
摘要翻译：一种制造半导体器件的方法，包括在半导体层中形成第一凹槽的步骤，用第一绝缘膜填充第一凹槽的步骤，选择性地蚀刻第一凹槽中的第一绝缘膜以形成具有小宽度的至少一个第二凹槽，以及用第二绝缘膜填充第二凹槽的步骤，以形成宽度大致与半导体层基本齐平的隔离层。

84. 发明授权

US4500615A Wafer exposure method and apparatus 失效
标题翻译：晶圆曝光方法及装置
公开(公告)号：US4500615A
公开(公告)日：1985-02-19
申请号：US421070
申请日：1982-09-22
申请人： Hiroshi Iwai
发明人： Hiroshi Iwai
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , G03C5/00 , G01B11/02
CPC分类号： G03F7/70558 , G03F7/20 , G03F7/70425 , G03F7/70608
摘要： Provided are a wafer exposure method and apparatus wherein a mask of a desired chip pattern is exposed in a reduced scale onto a wafer coated with a resist film, and a number of resist patterns are transferred onto the resist film by the step and repeat method. During the transfer of the resist pattern, the thickness of the resist film is measured, and the exposure is controlled according to the measured thickness of the resist film.
摘要翻译：提供了一种晶片曝光方法和装置，其中将期望的芯片图案的掩模以缩小的比例曝光到涂覆有抗蚀剂膜的晶片上，并且通过步骤和重复方法将多个抗蚀剂图案转印到抗蚀剂膜上。在抗蚀剂图案的转印期间，测量抗蚀剂膜的厚度，并且根据所测量的抗蚀剂膜的厚度来控制曝光。

85. 发明授权

US4419813A Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4419813A
公开(公告)日：1983-12-13
申请号：US325375
申请日：1981-11-27
申请人： Hiroshi Iwai
发明人： Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/225
CPC分类号： H01L21/76237 , Y10S438/978
摘要： A method for forming an isolation region on a semiconductor substrate which comprises steps of forming first a groove in said substrate, filling the groove with a first insulating film in a manner which may inevitably leave a gap between the wall of the groove and the each side of the first insulating film, forming a second insulating film on the surface of said substrate including said groove, and removing a surface layer of said second insulating film thereby forming an isolation region in the groove filled completely with the first and second insulating films.
摘要翻译：一种用于在半导体衬底上形成隔离区域的方法，包括以下步骤：在所述衬底中首先形成沟槽，用第一绝缘膜填充沟槽，其可能不可避免地在凹槽的壁和每个侧面之间留下间隙的第一绝缘膜，在包括所述槽的所述基板的表面上形成第二绝缘膜，并且去除所述第二绝缘膜的表面层，从而在所述第一绝缘膜和第二绝缘膜完全填充的槽中形成隔离区。

86. 发明授权

US4418304A Circuit for controlling rotation of motor 失效
标题翻译：电机旋转控制电路
公开(公告)号：US4418304A
公开(公告)日：1983-11-29
申请号：US251778
申请日：1981-04-07
申请人： Hiroshi Iwai
发明人： Hiroshi Iwai
IPC分类号： H02P29/00 , H02P23/00 , H02P5/16
CPC分类号： H02P23/186 , Y10S388/901 , Y10S388/911 , Y10S388/915
摘要： A circuit for controlling rotation of motor comprises a frequency generator for generating a rotational velocity signal responsive to the rotational velocity of a motor whose rotation is to be controlled, reference signal generator for generating a reference signal, phase comparator for comparing the phases of the rotational velocity signal and the reference signal, a multiplexing circuit for multiplexing the rotational velocity signal and the output signal of the phase comparator, a sample-and-hold circuit for sampling and holding the output multiplexed signal of the multiplexing circuit by the rotational velocity signal, and a controlling circuit for controlling the rotation of the motor by the output signal of the sample-and-hold circuit.
摘要翻译：用于控制电机旋转的电路包括频率发生器，用于响应于要控制其旋转的电动机的旋转速度产生旋转速度信号，用于产生参考信号的参考信号发生器，用于比较旋转的相位的相位比较器速度信号和参考信号，用于复用相位比较器的旋转速度信号和输出信号的多路复用电路，用于通过旋转速度信号对复用电路的输出复用信号进行采样和保持的采样和保持电路，以及控制电路，用于通过采样保持电路的输出信号来控制电机的旋转。

87. 发明授权

US4394196A Method of etching, refilling and etching dielectric grooves for isolating micron size device regions 失效
标题翻译：蚀刻，重新填充和蚀刻用于隔离微米尺寸器件区域的电介质沟槽的方法
公开(公告)号：US4394196A
公开(公告)日：1983-07-19
申请号：US282642
申请日：1981-07-13
申请人： Hiroshi Iwai
发明人： Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/76 , H01L27/00
CPC分类号： H01L21/76229 , H01L21/76232
摘要： A method for manufacturing a semiconductor device comprising: (a) a step of forming at least one groove(s) at the predetermined portion(s) of a semiconductor substrate; (b) a step of depositing insulating material with a thickness larger than half the opening width of the groove on the whole surface of the semiconductor substrate including the groove to fill the groove with insulating material; and (c) a step of etching the insulating material layer by the thickness thereof on the semiconductor substrate excluding the groove to form a field region consisting of insulating material left at least in the groove.
摘要翻译：一种制造半导体器件的方法，包括：（a）在半导体衬底的预定部分形成至少一个沟槽的步骤; （b）在包括沟槽的半导体衬底的整个表面上沉积厚度大于沟槽开口宽度的一半的绝缘材料的步骤，以用绝缘材料填充沟槽; 以及（c）除了沟槽以外的半导体衬底上的厚度对绝缘材料层进行蚀刻的步骤，以形成至少留在沟槽中的绝缘材料构成的场区域。

88. 发明授权

US4352902A Emulsion composition containing cellulose derivative 失效
标题翻译：含有纤维素衍生物的乳液组合物
公开(公告)号：US4352902A
公开(公告)日：1982-10-05
申请号：US223148
申请日：1981-01-07
申请人： Yasuharu Nakayama , Hiroshi Iwai , Hajime Sukejima
发明人： Yasuharu Nakayama , Hiroshi Iwai , Hajime Sukejima
IPC分类号： C08F251/02 , C08F290/12 , C08F291/00 , C09D151/02 , C08L1/10
CPC分类号： C08F291/00 , C08F251/02 , C08F290/12 , C09D151/02
摘要： An emulsion composition which is the product of emulsion polymerization of a mixture of at least one radical-polymerizable unsaturated monomer and at least one cellulose derivative in the presence of a water-soluble resin having a graft-polymerizable unsaturated group in the side chain.
摘要翻译：在侧链中具有接枝聚合不饱和基团的水溶性树脂的存在下，作为至少一种可自由基聚合的不饱和单体和至少一种纤维素衍生物的混合物进行乳液聚合的产物的乳液组合物。

89. 发明授权

US4327476A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4327476A
公开(公告)日：1982-05-04
申请号：US211188
申请日：1980-11-28
申请人： Hiroshi Iwai , Yoshio Nishi
发明人： Hiroshi Iwai , Yoshio Nishi
IPC分类号： H01L27/10 , H01L21/334 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/78 , H01L29/94 , H01L21/28 , H01L21/302
CPC分类号： H01L29/66181 , H01L27/10829 , H01L29/945 , Y10S148/05 , Y10S148/118 , Y10S148/136
摘要： A method of manufacturing semiconductor devices is disclosed which comprises the steps of: forming at least one groove at a given location of a semiconductor substrate; laying an insulating film over the entire surface of the semiconductor substrate including the groove; depositing conductive material on the insulating layer to a thickness greater than half the width of an opening of the groove; and forming a MOS capacitor electrode of the conductor layer left in the groove by etching the deposited conductor layer until the insulating film other than its portion within the groove is exposed.
摘要翻译：公开了制造半导体器件的方法，其包括以下步骤：在半导体衬底的给定位置处形成至少一个沟槽; 在包括沟槽的半导体衬底的整个表面上铺设绝缘膜; 将绝缘层上的导电材料沉积成大于沟槽开口宽度的一半的厚度; 并且通过蚀刻沉积的导体层形成导体层的MOS电容器电极，直到除了凹槽内部的绝缘膜露出为止。

90. 发明授权

US4221683A Low temperature curing high solid coating composition 失效
标题翻译：低温固化高固体涂料组合物
公开(公告)号：US4221683A
公开(公告)日：1980-09-09
申请号：US886898
申请日：1978-03-15
申请人： Yasusi Nakate , Hiroshi Iwai , Kiyoshi Nanishi
发明人： Yasusi Nakate , Hiroshi Iwai , Kiyoshi Nanishi
IPC分类号： C08L61/20 , C09D133/06 , C09D161/20 , C08L33/14 , C08L61/32
CPC分类号： C09D133/066 , C09D161/20 , C08L61/20
摘要： A low temperature curing high solid coating composition which comprises: (I) acrylic resin having a glass transition temperature of 20.degree. to -50.degree. C. and a hydroxyl value of 40 to 280, which is obtained by copolymerizing the monomer mixture comprising (a) acrylic ester and/or methacrylic ester, and if necessary, (b) acrylic acid or methacrylic acid, (II) amino-formaldehyde resin which is etherified with a monohydric alcohol, (III) an acid catalyst, and if necessary, (IV) cellulose derivatives and/or (V) metallic coordination compounds of titanium, zirconium and/or aluminium.The coating composition of the invention is characterized in that it has a high solid content and is cured at a low temperature and the obtained coating film has quite excellent properties of durability, hardness and chemical resistance.
摘要翻译：一种低温固化高固体涂料组合物，其包含：（I）玻璃化转变温度为20〜-50℃，羟基值为40〜280的丙烯酸树脂，其通过使包含（a ）丙烯酸酯和/或甲基丙烯酸酯，如果需要，（b）丙烯酸或甲基丙烯酸，（II）与一元醇醚化的氨基甲醛树脂，（III）酸催化剂，如果需要，（IV ）纤维素衍生物和/或（V）钛，锆和/或铝的金属配位化合物。本发明的涂料组合物的特征在于其固体含量高，在低温下固化，所得涂膜具有相当优异的耐久性，硬度和耐化学性能。

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