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81. 发明申请

US20120001271A1 GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS 有权
标题翻译：门电极和门接触电路集成电路场效应晶体管
公开(公告)号：US20120001271A1
公开(公告)日：2012-01-05
申请号：US12984762
申请日：2011-01-05
申请人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
发明人： Kyo-Suk Chae , Satoru Yamada , Sang-Yeon Han , Young-Jin Choi , Wook-Je Kim
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L23/535 , H01L27/0207 , H01L29/0649 , H01L29/0847 , H01L29/42376 , H01L29/4238 , H01L29/4933 , H01L29/7833
摘要： A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.
摘要翻译：四晶体管布局可以包括限定有源区域的隔离区域，有源区域沿第一和第二不同方向延伸。四个晶体管的共同源极区域从有源区域的中心沿着第一和第二方向延伸，以限定位于公共源极区域外的有源区域的四个象限。设置四个漏极区，其中的一个位于四个象限中的相应一个中并与公共源极区间隔开。最后，提供四个栅电极，其中的一个位于公共源极区域和四个漏极区域中的相应一个之间的四个象限中的相应一个中。相应的栅电极包括顶点和第一和第二延伸部分，第一延伸部分从顶点沿着第一方向延伸，第二延伸部分从顶点沿着第二方向延伸。

82. 发明授权

US07972470B2 Asymmetric grounding of rectangular susceptor 有权
标题翻译：矩形基座不对称接地
公开(公告)号：US07972470B2
公开(公告)日：2011-07-05
申请号：US11775359
申请日：2007-07-10
申请人： Gaku Furuta , Soo Young Choi , Young-Jin Choi
发明人： Gaku Furuta , Soo Young Choi , Young-Jin Choi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/32568 , H01J37/32577 , H01J37/32623 , H01J37/32697
摘要： An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.
摘要翻译：用于等离子体处理室中的不对称接地的基座，用于化学气相沉积到由基座支撑并接地的大矩形面板上。多个接地带连接在基座的外围与接地的真空室之间，以缩短RF电子的接地路径。柔性带允许基座垂直移动。带子提供对周边不对称的地面电导。带可以是均匀间隔的，但是具有不同的厚度或不同的形状，或者从可用的接地点去除并因此提供不同的RF电导。选择不对称性以改善PECVD沉积膜的沉积均匀性和其他质量。

83. 发明申请

US20110069518A1 RESONANT INVERTER OF RADIO FREQUENCY GENERATOR FOR RADIOFREQUENCY ABLATION 审中-公开
标题翻译：无线电频率发生器用于无线电频率消除的共振逆变器
公开(公告)号：US20110069518A1
公开(公告)日：2011-03-24
申请号：US12730713
申请日：2010-03-24
申请人： Kyong-Min SHIN , Hong-chea Jung , Young-Jin Choi , Jun-hyok Lee , Jae-Bok Kim , Guk-joo Na , Kye-joo Kim
发明人： Kyong-Min SHIN , Hong-chea Jung , Young-Jin Choi , Jun-hyok Lee , Jae-Bok Kim , Guk-joo Na , Kye-joo Kim
IPC分类号： H02M7/02
CPC分类号： H02M7/538 , H02M2007/4815 , Y02B70/1441
摘要： Disclosed herein is the resonant inverter of a radio frequency (RF) generator for radiofrequency ablation (RFA). The resonant inverter of RF generator for RFA amplifies to high power an oscillation frequency output from an oscillator and provides the amplified oscillation frequency to an electrode. The resonant inverter processes the oscillation frequency output from the oscillator as a high-power sine wave having a frequency of 480 kHz and a Root Mean Square (RMS) power of 30 to 200 watts, and transfers the high-power sine wave to the electrode.
摘要翻译：这里公开了用于射频消融（RFA）的射频（RF）发生器的谐振逆变器。用于RFA的RF发生器的谐振逆变器将从振荡器输出的振荡频率放大到高功率，并将放大的振荡频率提供给电极。谐振逆变器将振荡器输出的振荡频率作为频率为480kHz，均方根（RMS）功率为30〜200瓦特的高功率正弦波进行处理，并将高功率正弦波传送到电极。

84. 发明申请

US20100221907A1 Method of Fabricating a Fuse for Use in a Semiconductor Device 审中-公开
标题翻译：制造用于半导体器件的保险丝的方法
公开(公告)号：US20100221907A1
公开(公告)日：2010-09-02
申请号：US12780683
申请日：2010-05-14
申请人： Young Jin Choi , Jin Won Park
发明人： Young Jin Choi , Jin Won Park
IPC分类号： H01L21/44
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse in a semiconductor device includes: first and second fuse patterns, each being in the shape of a bar, separated from each other in a blowing region; first and second contact plugs respectively coupled to the first and the second fuse patterns; and a third fuse pattern coupled to the first and the second fuse patterns through the first and the second contact plugs.
摘要翻译：半导体器件中的熔丝包括：第一和第二熔丝图案，每个都是棒状，在吹风区域彼此分离; 分别耦合到第一和第二熔丝图案的第一和第二接触插塞; 以及通过第一和第二接触插塞耦合到第一和第二熔丝图案的第三熔丝图案。

85. 发明申请

US20090255798A1 METHOD TO PREVENT PARASITIC PLASMA GENERATION IN GAS FEEDTHRU OF LARGE SIZE PECVD CHAMBER 审中-公开
标题翻译：防止大型PECVD室气体排放中PARASITIC PLASMA产生的方法
公开(公告)号：US20090255798A1
公开(公告)日：2009-10-15
申请号：US12271616
申请日：2008-11-14
申请人： Gaku Furuta , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
发明人： Gaku Furuta , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/513
CPC分类号： C23C16/5096 , C23C16/4405 , C23C16/45561 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32449
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

86. 发明申请

US20080292811A1 CHAMBER IDLE PROCESS FOR IMPROVED REPEATABILITY OF FILMS 审中-公开
标题翻译：改进膜片可重复性的室内空白过程
公开(公告)号：US20080292811A1
公开(公告)日：2008-11-27
申请号：US11753571
申请日：2007-05-25
申请人： YOUNG-JIN CHOI , Soo Young Choi , Qunhua Wang , Weijie Wang
发明人： YOUNG-JIN CHOI , Soo Young Choi , Qunhua Wang , Weijie Wang
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/54 , C23C16/4401 , H01J37/32458
摘要： Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.
摘要翻译：提供了用于改善通过气相沉积从液体源在室中的基板上蒸发的前体沉积的含硅膜的基板到基板均匀性的方法和装置。所述方法包括在室中处理一个衬底之后的预定时间并且在腔室中处理下一个衬底之前将腔室暴露于处理步骤。在一个方面，处理步骤包括将含硅前体的流动引入室中一段时间。在另一方面，所述处理步骤包括在存在或不存在等离子体的情况下将所述室暴露于气体一段时间。

87. 发明授权

US07160828B2 Low-fire high-permittivity dielectric compositions 失效
公开(公告)号：US07160828B2
公开(公告)日：2007-01-09
申请号：US11365165
申请日：2006-03-01
申请人： Jae-Hwan Park , Jae-Gwan Park , Dong-Soon Shin , Young-Jin Choi
发明人： Jae-Hwan Park , Jae-Gwan Park , Dong-Soon Shin , Young-Jin Choi
IPC分类号： C04B35/468
CPC分类号： C04B35/468 , B32B2311/08 , C04B35/4686 , C04B35/4688 , C04B35/472 , C04B2235/3215 , C04B2235/3224 , C04B2235/3296 , C04B2235/3298 , C04B2235/365 , C04B2235/656 , C04B2235/77 , C04B2235/79 , C04B2237/346 , C04B2237/408 , H01P1/203
摘要： A dielectric composition that can be fired at a temperature of below 900° C. The dielectric composition has a dielectric constant of 25–35 and a quality factor (Qxf) of 6,000–20,000 GHz. The composition comprises 3–16 wt % of K2O—Na2O—Li2O—B2O3—SiO2 system glass frit and 84–97 wt % of BaO—TiO2 system dielectric ceramics. The composition can be effectively applied to construct a part of a ceramic multi-layer packaging as a resonator form such as a filter or an antenna, etc.

88. 发明授权

US07158794B2 Forward channel scheduling algorithm of HDR system 有权
标题翻译： HDR系统的前向信道调度算法
公开(公告)号：US07158794B2
公开(公告)日：2007-01-02
申请号：US10843561
申请日：2004-05-12
申请人： Young-Jin Choi
发明人： Young-Jin Choi
IPC分类号： H04Q7/20
CPC分类号： H04W72/1221 , H04L47/24 , H04L47/283 , H04L47/50 , H04L49/90 , H04W72/1242
摘要： A system and method for performing forward channel scheduling for an HDR system includes collecting status information of connected terminals, calculating a predetermined weight (α(n)), calculating priority values of respective terminals based on the collected status information and the weight (α(n)), and selecting a terminal having the highest priority value and providing the selected terminal with the service. By considering the number of connected mobile terminals, disadvantages of other proposed scheduling algorithms are overcome. Also, the entire throughput of the HDR system is improved by maintaining Quality of Service (QoS) of the mobile terminals that require the real-time service.
摘要翻译：用于执行HDR系统的前向信道调度的系统和方法包括：收集连接的终端的状态信息，计算预定权重（α（n）），基于所收集的状态信息和权重来计算各个终端的优先级值（α（ n）），并且选择具有最高优先级值的终端并向所选择的终端提供服务。通过考虑连接的移动终端的数量，克服了其他提出的调度算法的缺点。此外，通过维护需要实时服务的移动终端的服务质量（QoS），HDR系统的整体吞吐量得到改善。

89. 发明授权

US07116607B2 Apparatus and method of removing disturbances during optical recording and/or reproducing 有权
标题翻译：在光学记录和/或再现期间去除干扰的装置和方法
公开(公告)号：US07116607B2
公开(公告)日：2006-10-03
申请号：US10232826
申请日：2002-09-03
申请人： Moon-noh Lee , Won Kim , Gwang-ho Lee , Sung-ro Go , Hong-rok Kim , Il-hong Suh , Wan-kyun Chung , Young-jin Choi
发明人： Moon-noh Lee , Won Kim , Gwang-ho Lee , Sung-ro Go , Hong-rok Kim , Il-hong Suh , Wan-kyun Chung , Young-jin Choi
IPC分类号： G11B21/08
CPC分类号： G11B7/08505 , G11B7/0953
摘要： An apparatus to remove periodic disturbances in a recording medium having large eccentricity and deflection mass includes an actuator to change a position of a pickup in response to a combination of first and second compensation signals, an error detector to detect an error between positions actuator and the recording medium, a first compensator to receive the detected error and to output the first compensation signal that the actuator uses to actuate the pickup along the recording medium in upper and lower directions, and right and left directions; and a second compensator to output the second compensation signal from which the disturbance has been removed, to combine the compensated error and previous first and second compensation signals, and to filter the combined result at a predetermined bandwidth.
摘要翻译：一种用于去除具有大的偏心和偏转质量的记录介质中的周期性干扰的装置包括响应于第一和第二补偿信号的组合来改变拾取器的位置的致动器，用于检测位置致动器和位置致动器之间的误差的误差检测器记录介质，第一补偿器，用于接收检测到的误差并输出致动器用于沿上下方向和左右方向沿记录介质致动拾取器的第一补偿信号; 以及第二补偿器，用于输出从其去除了干扰的第二补偿信号，以将补偿的误差与先前的第一和第二补偿信号组合，并且以预定带宽对组合结果进行滤波。

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