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81. 发明授权

US07544585B2 Structure of strained silicon on insulator and method of manufacturing the same 失效
标题翻译：绝缘子上的应变硅的结构及其制造方法
公开(公告)号：US07544585B2
公开(公告)日：2009-06-09
申请号：US12003039
申请日：2007-12-19
申请人： Young-soo Park , Wenxu Xianyu , Takashi Noguchi
发明人： Young-soo Park , Wenxu Xianyu , Takashi Noguchi
IPC分类号： H01L21/30
CPC分类号： H01L21/76259 , H01L21/32134 , H01L21/76256 , H01L27/1266 , H01L29/7842 , H01L29/78603 , H01L29/78687 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.
摘要翻译：提供了应变SOI结构和制造应变SOI结构的方法。应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层和形成在SiO 2层上的应变硅层。

82. 发明授权

US07482648B2 Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US07482648B2
公开(公告)日：2009-01-27
申请号：US11024469
申请日：2004-12-30
申请人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
发明人： Wenxu Xianyu , Takashi Noguchi , In-kyeong Yoo , Young-soo Park
IPC分类号： H01L31/119
CPC分类号： H01L27/11507 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.
摘要翻译：在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关元件。电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

83. 发明申请

US20080191247A1 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
标题翻译：具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法
公开(公告)号：US20080191247A1
公开(公告)日：2008-08-14
申请号：US12007037
申请日：2008-01-04
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L21/8239 , H01L27/105 , H01L29/68
CPC分类号： H01L27/0688 , H01L21/8221 , H01L27/11521 , H01L27/11551 , H01L29/7854
摘要： A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.
摘要翻译：提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。该器件可以包括从半导体衬底向上突出的活性鳍片。可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。至少一个第一控制栅极线可以在有源鳍上交叉。层间绝缘层可以形成在至少一个第一控制栅极线上。多晶硅鳍可以形成在层间介电层上。可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

84. 发明申请

US20080038862A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20080038862A1
公开(公告)日：2008-02-14
申请号：US11819386
申请日：2007-06-27
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans Cho
IPC分类号： H01L21/64 , H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

85. 发明授权

US07297615B2 Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
公开(公告)号：US07297615B2
公开(公告)日：2007-11-20
申请号：US11341519
申请日：2006-01-30
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： C30B1/02 , H01L21/20
CPC分类号： H01L29/78654 , H01L29/0673 , H01L29/66772 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/938 , Y10T428/26
摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

86. 发明申请

US20070246802A1 Semiconductor device and methods thereof 有权
标题翻译：半导体器件及其方法
公开(公告)号：US20070246802A1
公开(公告)日：2007-10-25
申请号：US11702624
申请日：2007-02-06
申请人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02516 , H01L21/02532
摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
摘要翻译：半导体器件及其方法。示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层，第一层，第二层和第三层各自相对于多个晶面之一高度取向。示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层第三层各自相对于多个晶面之一高度取向。

87. 发明申请

US20070128777A1 POLY-Si THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US20070128777A1
公开(公告)日：2007-06-07
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans CHO
发明人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans CHO
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

88. 发明申请

US20070048912A1 Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same 有权
标题翻译：形成单晶硅层的方法，包括其的结构，以及使用其制造薄膜晶体管的方法
公开(公告)号：US20070048912A1
公开(公告)日：2007-03-01
申请号：US11493182
申请日：2006-07-26
申请人： Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Hans Cho , Kyung-bae Park
发明人： Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Hans Cho , Kyung-bae Park
IPC分类号： H01L21/84
CPC分类号： H01L21/02639 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L29/66772
摘要： Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of forming the single crystalline silicon layer includes forming a silicon nitride layer on a substrate, forming an insulating layer on the silicon nitride layer, forming a hole in the insulating layer to a predetermined dimension, depositing a first silicon layer on an exposed bottom of the hole using a selective deposition process, depositing a second silicon layer on the insulating layer and the first silicon layer formed in the hole, and crystallizing the second silicon layer using a thermal process. In this method, a high-quality single crystalline silicon layer can be obtained.
摘要翻译：提供了形成单晶硅层的方法，包括其的结构，以及使用其制造薄膜晶体管（“TFT”）的方法。形成单晶硅层的方法包括在衬底上形成氮化硅层，在氮化硅层上形成绝缘层，在绝缘层中形成预定尺寸的孔，在暴露的底部上沉积第一硅层使用选择性沉积工艺，在绝缘层上沉积第二硅层和在孔中形成的第一硅层，并使用热处理使第二硅层结晶。在该方法中，可以获得高品质的单晶硅层。

89. 发明申请

US20060144323A1 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same 有权
公开(公告)号：US20060144323A1
公开(公告)日：2006-07-06
申请号：US11311228
申请日：2005-12-20
申请人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Young-soo Park , Hans Cho , Huaxiang Yin
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/26506 , H01L21/268 , H01L21/32134 , H01L21/76254 , H01L21/76256 , H01L27/1214 , H01L27/1266 , H01L29/04 , H01L29/66757 , H01L29/66772
摘要： A method of fabricating a large substrate with a locally integrated single crystalline silicon layer is provided. The method includes: forming a buffer layer on a support plate; separately fabricating a single crystalline silicon layer; attaching the single crystalline silicon layer having a predetermined thickness, which is separately fabricated, to a predetermined portion in the support plate; forming a non-single crystalline silicon layer having a predetermined thickness to cover the single crystalline silicon layer and the buffer layer; and processing the non-single crystalline silicon layer to expose a surface of the non-single crystalline silicon layer and to level the surface of the non-single crystalline silicon layer with a surface of the amorphous silicon layer.

90. 发明申请

US20060134894A1 Method of manufacturing polycrystalline Si film and manufacturing stacked transistor using the same 有权
标题翻译：制造多晶Si膜的方法和使用其制造堆叠晶体管
公开(公告)号：US20060134894A1
公开(公告)日：2006-06-22
申请号：US11283874
申请日：2005-11-22
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.
摘要翻译：提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线，形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

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