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81. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

82. 发明授权

US08319225B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08319225B2
公开(公告)日：2012-11-27
申请号：US12611951
申请日：2009-11-04
申请人： Takahiro Kamo , Takeshi Noda
发明人： Takahiro Kamo , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678 , H01L29/78696
摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.
摘要翻译：显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

83. 发明授权

US08124974B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08124974B2
公开(公告)日：2012-02-28
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.
摘要翻译：提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域晶体管。

84. 发明申请

US20110140101A1 Light Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20110140101A1
公开(公告)日：2011-06-16
申请号：US12966157
申请日：2010-12-13
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： H01L33/28
CPC分类号： H01L33/26 , H01L51/5048 , H01L51/5203 , H01L51/5209 , H05B33/24
摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
摘要翻译：本发明的目的是提供一种发光装置，其中即使当具有诸如铝的高反射率的材料用于电极时，可以在电极上形成包含氧的层，而不增加接触电阻，并且其制造方法。根据本发明，其特征在于，具有由具有高反射率的导电膜如铝，银以及包含铝的合金或含有银的合金的叠层结构的电极和导电性的发光元件在导电膜上设置由难熔金属材料构成的膜，或者具有发光元件的发光装置。

85. 发明授权

US07897979B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07897979B2
公开(公告)日：2011-03-01
申请号：US10454124
申请日：2003-06-04
申请人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
发明人： Shunpei Yamazaki , Takeshi Noda , Yoshinari Higaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/5271 , H01L51/5284 , H01L2251/56
摘要： A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
摘要翻译：一种发光装置，其是通过在绝缘体19的上端形成具有曲率半径的曲面的方法制造的，使第一电极18c的一部分根据弯曲表面形成倾斜面，并施加蚀刻以便将第一电极18b暴露在区域中以形成发光区域，其中来自含有有机化合物20的层的发射光在第一电极18c的倾斜表面上被反射，以增加第一电极18b的总取出量在图1所示的箭头方向上的光。此外，在除了该区域之外的第一电极18c上形成包含吸光多层膜的吸光多层膜24以形成发光区域，从而获得结构增加的结构的发光装置在发光元件中沿一个方向取出的发光，而不是所有在含有有机化合物的层中形成的光都从作为TFT的透明电极的阴极中取出，但是也例如在横向（与基板的平面平行的方向）。

86. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

87. 发明授权

US07671370B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07671370B2
公开(公告)日：2010-03-02
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji Oue , Takeshi Noda
IPC分类号： H01L27/14
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

88. 发明授权

US07619251B2 Laser crystallization method suppressing propagation of cracks forming a display device 有权
标题翻译：抑制形成显示装置的裂纹扩散的激光结晶化方法
公开(公告)号：US07619251B2
公开(公告)日：2009-11-17
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L29/04 , H01L31/036 , H01L21/84 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要翻译：用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

89. 发明授权

US07145210B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07145210B2
公开(公告)日：2006-12-05
申请号：US10941965
申请日：2004-09-16
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

90. 发明申请

US20060270130A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060270130A1
公开(公告)日：2006-11-30
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L21/84 , H01L29/76
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.
摘要翻译：在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。用CW激光束照射除基板切断位置CUT附近的基板GLS。衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

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