专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20170358714A1 LIGHT-EMITTING DIODE DEVICE FOR ENHANCING LIGHT EXTRACTION EFFICIENCY AND CURRENT INJECTION EFFICIENCY 有权
公开(公告)号：US20170358714A1
公开(公告)日：2017-12-14
申请号：US15608626
申请日：2017-05-30
申请人： Tae Yeon SEONG , Jee-Yun LEE , Dae-Hyun KIM , Ki Seok KIM
发明人： Tae Yeon SEONG , Jee-Yun LEE , Dae-Hyun KIM , Ki Seok KIM
IPC分类号： H01L33/42 , H01L33/14 , H01L33/32 , H01L33/06
CPC分类号： H01L33/42 , H01L33/06 , H01L33/145 , H01L33/32
摘要： Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the n-type GaN layer, a p-type GaN layer on the active layer, a current spreading layer including a transparent conductive metal oxide material on the p-type GaN layer, a plurality of upper current injection electrodes provided on the current spreading layer to be spaced apart from each other, an upper electrode pattern extending to cover the upper current injection electrodes, and an upper electrode pad electrically connected to the upper electrode pattern. The upper electrode pattern may include first and second upper electrode patterns, which are sequentially stacked and are a silver or silver alloy thin layer and a transparent conductive metal oxide thin layer, respectively.

82. 发明授权

US08946745B2 Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate 有权
标题翻译：用于制造垂直结构的半导体发光器件的支撑衬底和使用该支撑衬底的半导体发光器件
公开(公告)号：US08946745B2
公开(公告)日：2015-02-03
申请号：US13054472
申请日：2009-07-15
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/10 , H01L33/00 , H01L21/762 , H01L33/62 , H01L33/40
CPC分类号： H01L33/0079 , H01L21/76254 , H01L33/007 , H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device.The supporting substrate for manufacturing the vertically-structured semiconductor light emitting device of the present invention comprises: a selected supporting substrate formed of a material having a difference of thermal expansion coefficient of 5 ppm or less from a sapphire substrate on which a multi-layered light-emitting structure thin film comprising a Group III-V nitride-based semiconductor is laminated; a sacrificial layer formed on the selected supporting substrate; a thick metal film formed on an upper part of the sacrificial layer; and a bonding layer formed on an upper part of the thick metal layer and formed of a soldering or brazing alloy material.
摘要翻译：本发明涉及用于制造垂直结构的半导体发光器件的支撑衬底和使用该支撑衬底的垂直结构的半导体发光器件，其使从与之相分离的多层发光结构薄膜的损伤和断裂最小化蓝宝石衬底，从而提高半导体发光器件的整体性能。用于制造本发明的垂直构造的半导体发光器件的支撑衬底包括：由多层光的蓝宝石衬底的热膨胀系数为5ppm以下的材料形成的选择的支撑衬底层叠由III-V族氮化物类半导体构成的发光结构薄膜; 形成在所选择的支撑衬底上的牺牲层; 形成在牺牲层的上部的厚金属膜; 以及形成在厚金属层的上部并由焊接或钎焊合金材料形成的接合层。

83. 发明授权

US08405109B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US08405109B2
公开(公告)日：2013-03-26
申请号：US13095487
申请日：2011-04-27
申请人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
发明人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

84. 发明申请

US20120220063A1 VERTICAL-STRUCTURE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：垂直结构半导体发光元件及其生产方法
公开(公告)号：US20120220063A1
公开(公告)日：2012-08-30
申请号：US13505618
申请日：2010-11-23
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/26 , H01L33/36
CPC分类号： H01L33/647 , H01L33/0079
摘要： The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro- cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
摘要翻译：垂直结构半导体发光器件及其制造方法技术领域本发明涉及垂直结构半导体发光器件及其制造方法，更具体地说，涉及具有厚金属膜或金属箔的高性能散热器支撑体的垂直结构半导体发光器件。根据本发明制造的垂直结构半导体发光元件构成了高度可靠的发光元件，绝对没有热或机械损伤，因为它具有高性能的散热器支撑，因此不会发生微细微裂纹并且可以自由地受到进行热处理和后处理，包括侧表面钝化薄膜。

85. 发明授权

US08227283B2 Top-emitting N-based light emitting device and method of manufacturing the same 有权
标题翻译：顶级发射型N型发光器件及其制造方法
公开(公告)号：US08227283B2
公开(公告)日：2012-07-24
申请号：US11812305
申请日：2007-06-18
申请人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
发明人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/42
摘要： Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.
摘要翻译：提供了一种顶发射型N型发光器件及其制造方法。该N系发光元件可以包括可依次层叠在基板上的n型覆盖层，有源层，p型覆盖层和透明导电性薄膜。透明导电薄膜可以具有通过湿蚀刻然后退火而不使用掩模来提高光提取速率的图案化的表面纳米级。具有较高亮度的发光器件可以通过使用具有通过湿蚀刻图形化然后退火的表面的透明导电薄膜来增加或最大化光提取率来制备。

86. 发明授权

US07687908B2 Thin film electrode for high-quality GaN optical devices 有权
标题翻译：用于高品质GaN光学器件的薄膜电极
公开(公告)号：US07687908B2
公开(公告)日：2010-03-30
申请号：US10886686
申请日：2004-07-09
申请人： Dong-seok Leem , June-o Song , Sang-ho Kim , Tae-yeon Seong
发明人： Dong-seok Leem , June-o Song , Sang-ho Kim , Tae-yeon Seong
IPC分类号： H01L23/48
CPC分类号： H01L33/42 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.
摘要翻译：用于p型GaN半导体的欧姆接触的薄膜电极包括顺序堆叠在p型GaN层上的第一和第二电极层。第一电极层可以包括Ni基合金，Cu基合金，Co基合金或能够形成p型热电氧化物的固溶体，或者可以包括至少掺杂有氧化镍的Ni氧化物一个选自Al，Ga和In。第二电极层可以包括选自Au，Pd，Pt，Ru，Re，Sc，Mg，Zn，V，Hf，Ta，Rh，Ir，W，Ti，Ag，Cr，Mo中的至少一种，Nb，Ca，Na，Sb，Li，In，Sn，Al，Ni，Cu和Co。此外，提供了制造薄膜电极的方法。

87. 发明授权

US07541207B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07541207B2
公开(公告)日：2009-06-02
申请号：US11714843
申请日：2007-03-07
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L21/285 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
摘要翻译：提供一种发光器件及其制造方法。发光器件具有依次层叠基板，n型覆盖层，发光层，p型覆盖层，欧姆接触层和反射层的结构。通过向氧化铟中加入附加元素来形成欧姆接触层。根据发光器件及其制造方法，提高了与p型覆盖层的欧姆接触的特性，从而提高了包装FCLEDS期间引线接合的效率和产率。此外，由于低的非接触电阻和优异的电流和电压特性，可以提高发光器件的发光效率和寿命。

88. 发明授权

US07462877B2 Nitride-based light emitting device, and method of manufacturing the same 有权
标题翻译：氮化物系发光器件及其制造方法
公开(公告)号：US07462877B2
公开(公告)日：2008-12-09
申请号：US10891014
申请日：2004-07-15
申请人： June-o Song , Tae-yeon Seong
发明人： June-o Song , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.
摘要翻译：提供一种在N型覆盖层和P型覆盖层之间具有发光层的氮化物系发光器件。所述发光装置包括：反射从所述发光层发射的光的反射层; 以及形成在所述反射层与所述P型覆盖层之间的至少一个金属层。

89. 发明申请

US20080258133A1 Semiconductor Device and Method of Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080258133A1
公开(公告)日：2008-10-23
申请号：US12092017
申请日：2006-10-27
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L31/20 , H01L29/12
CPC分类号： H01L33/04 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/405
摘要： Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or/and formed on the second type nitride-based cladding layer.
摘要翻译：公开了一种半导体器件。半导体器件包括形成在具有绝缘性的生长衬底上的第一氮化物基覆层，形成在第一氮化物基覆层上的多量子阱氮化物基有源层和第二氮化物基覆层，其与第一氮化物类包覆层不同，并且形成在多量子阱氮化物基活性层上。在未掺杂的缓冲氮化物基层和第一氮化物类覆层之间形成隧道结层，或/形成在第二氮化物基覆层上。

90. 发明申请

US20080224165A1 Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof 有权
标题翻译：最大发光二极管及其制造方法
公开(公告)号：US20080224165A1
公开(公告)日：2008-09-18
申请号：US11632183
申请日：2005-07-22
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光器件，其包含在p型覆盖层上形成的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式