专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07369118B2 Magnetic oscillation metric controller 失效
标题翻译：磁振幅度控制器
公开(公告)号：US07369118B2
公开(公告)日：2008-05-06
申请号：US10996459
申请日：2004-11-26
申请人： Wen-Chin Lee , Hsiang-Kuang Chen
发明人： Wen-Chin Lee , Hsiang-Kuang Chen
IPC分类号： G09G5/08
CPC分类号： G06F3/0362 , G06F3/0383
摘要： A magnetic oscillation metric controller applied to computer peripheral or electronic communication system essentially operating on a scrolling wheel for lateral metric control to provide precise, consistent, reliable and programmable adjustment oscillation sensitivity by driving a permanent magnet to generate signals of changed magnetic fields resulted from displacement; and retrieving the data of changed signals for achieving metric control purpose.
摘要翻译：应用于计算机外围或电子通信系统的磁振荡度量控制器，其基本上在用于横向度量控制的滚动轮上操作，以通过驱动永久磁体以产生由位移产生的变化的磁场的信号来提供精确，一致，可靠和可编程的调节振荡灵敏度 ; 以及检索改变信号的数据以达到度量控制目的。

82. 发明申请

US20080094920A1 MEMORY AND LOW OFFSET CLAMP BIAS CIRCUIT THEREOF 有权
标题翻译：存储器和低偏移钳位偏置电路
公开(公告)号：US20080094920A1
公开(公告)日：2008-04-24
申请号：US11551387
申请日：2006-10-20
申请人： Jer-Hao Hsu , Chung-Kuang Chen
发明人： Jer-Hao Hsu , Chung-Kuang Chen
IPC分类号： G11C5/14
CPC分类号： G11C5/143 , G11C11/413
摘要： A memory and a low offset clamp bias circuit thereof are provided. The low offset clamp bias circuit is adapted for any existing memory and is used for reducing the variation of a drain side voltage Vd supplied to a memory cell in a memory cell array area through the feedback mechanism formed by a clamp bias modulator and a constant voltage generator. Thereby, the accuracy in reading, writing, or erasing data in the memory can be improved.
摘要翻译：提供其存储器和低偏移钳位偏置电路。低偏移钳位偏置电路适用于任何现有存储器，并且用于通过反馈机构减小提供给存储单元阵列区域中的存储单元的漏极侧电压V sub的变化，该反馈机制由钳位偏置调制器和恒压发生器。从而可以提高存储器中的读取，写入或擦除数据的准确性。

83. 发明申请

US20080088379A1 Current device and method for phase-locked loop 审中-公开
标题翻译：用于锁相环的当前装置和方法
公开(公告)号：US20080088379A1
公开(公告)日：2008-04-17
申请号：US11907695
申请日：2007-10-16
申请人： Yi-Kuang Chen
发明人： Yi-Kuang Chen
IPC分类号： H03K3/03 , G05F3/16
CPC分类号： H03K3/0322 , G05F3/16 , H03K5/133 , H03K2005/00032 , H03K2005/00143 , H03K2005/00208 , H03L7/0995
摘要： A current device capable of process, voltage and temperature compensation for phase-locked loop (PLL) is disclosed. The current device can adjust the central frequency of oscillation of a voltage-controlled oscillator (VCO), making a compensated central oscillating frequency not affected by all process, voltage and temperature (PVT) variations. Meanwhile, the VCO having lower KVCO can operate in the same range of operating frequencies. Further, the current device of the invention can also be applied to a charge pump circuit, causing the charge pump current Icp to vary according to KVCO and therefore making the product of (Icp*KVCO) substantially independent of the PVT conditions.
摘要翻译：公开了一种能够进行锁相环（PLL）的处理，电压和温度补偿的电流装置。当前的器件可以调节压控振荡器（VCO）的中心振荡频率，使得补偿的中心振荡频率不受所有过程，电压和温度（PVT）变化的影响。同时，具有较低K VCO的VCO可以在相同的工作频率范围内工作。此外，本发明的电流装置也可以应用于电荷泵电路，使得电荷泵电流I C P N根据K VCO而变化，因此使产品的基本上与PVT条件无关的（I + C p + K + VCO）。

84. 发明授权

US07354179B2 Prism set and light emitting apparatus using the same 有权
标题翻译：棱镜组和使用其的发光装置
公开(公告)号：US07354179B2
公开(公告)日：2008-04-08
申请号：US11401387
申请日：2006-04-11
申请人： Jyh-Haur Huang , Jing-Huan Liao , Ming-Fa Wang , Chih-Kuang Chen
发明人： Jyh-Haur Huang , Jing-Huan Liao , Ming-Fa Wang , Chih-Kuang Chen
IPC分类号： F21V5/00
CPC分类号： F21V5/02 , F21V5/04 , F21Y2115/10 , G02B5/04 , G02F1/133603 , G02F2001/133607
摘要： A prism unit includes a first prism having a first incident face and a first refraction face that is adjacent to and that cooperates with the first incident face to define a first angle ranging 50° to 70°, a second prism having a second incident face that is generally parallel to the first refraction face and a medium layer sandwiched between the first refraction face and the second incident face, and having a refractive index smaller than that of the first and second prisms.
摘要翻译：棱镜单元包括具有第一入射面和第一折射面的第一棱镜，第一入射面和第一折射面与第一入射面相邻并且与第一入射面配合以限定范围为50°至70°的第一角度，第二棱镜具有第二入射面，通常平行于第一折射面和夹在第一折射面和第二入射面之间的折射率小于第一和第二棱镜的折射率的介质层。

85. 发明申请

US20080075523A1 Writing Instrument 审中-公开
标题翻译：书写工具
公开(公告)号：US20080075523A1
公开(公告)日：2008-03-27
申请号：US11534592
申请日：2006-09-22
申请人： Yu-Gang Chen , Jung-Kuang Chen
发明人： Yu-Gang Chen , Jung-Kuang Chen
IPC分类号： B43K29/00
CPC分类号： B43K29/00 , B43K5/005 , B43K7/005 , B43K21/006 , B43K29/005
摘要： A writing instrument is disclosed. More specifically, the writing instrument has a blowing function. The writing instrument comprises a penholder with the blowing function and a refill with a writing function. The penholder is composed of a first tube body with a hollow main body connected to a second tube body with a hollow main body. The first tube body is separated from or locked with the second tube body. The first tube body and the second tube body have air inlets and a plurality of scale holes respectively. Accordingly, the writing instrument does not only have the writing function, but also provides the blowing function for wind instruments. The entertainment of the writing instrument is then improved. The value added is also increased to have the economic efficiency.
摘要翻译：公开了一种书写工具。更具体地说，书写工具具有吹风功能。书写工具包括具有吹奏功能的笔杆和具有书写功能的笔芯。笔筒由具有中空主体的第一管体构成，第一管体与具有中空主体的第二管体连接。第一管体与第二管体分离或与第二管体锁定。第一管体和第二管体分别具有空气入口和多个刻度孔。因此，书写工具不仅具有书写功能，而且还为管乐器提供吹风功能。然后改善了书写工具的娱乐。增加值也增加了经济效益。

86. 发明申请

US20070295743A1 Composite note container 审中-公开
标题翻译：复合纸币
公开(公告)号：US20070295743A1
公开(公告)日：2007-12-27
申请号：US11472827
申请日：2006-06-23
申请人： Chao-Kuang Chen
发明人： Chao-Kuang Chen
IPC分类号： B65H1/00
CPC分类号： B42D5/005
摘要： A note container includes a base assembly and a first and a second compartment. The base assembly has a body and two half covers. The body has an inner space and a pressing button. The half covers are pivotally mounted on the body to cover the inner space. The first compartment is demountably mounted in the inner space of the body and divides the inner space into an upper space and a lower space. The second compartment is pivotally mounted on the body, held in the upper space when the half covers cover the inner space of the body. The second compartment has a receiving recess on which a paper holder with several second stacks of notepaper is mounted. The lower space is adapted to hold first stack of notepaper. The note container contains notepaper in various sizes, shapes and colors.
摘要翻译：钞票容器包括基座组件和第一和第二隔间。基座组件有一个主体和两个半盖。身体有一个内部空间和一个按钮。半盖可枢转地安装在主体上以覆盖内部空间。第一隔室可拆卸地安装在主体的内部空间中，并将内部空间分成上部空间和下部空间。第二隔间枢转地安装在主体上，当半盖覆盖主体的内部空间时，该隔间被保持在上部空间中。第二隔室具有容纳凹部，在该容纳凹部上安装有具有数个第二堆纸的纸盒。下部空间适于保持第一堆纸条。纸币容器包含各种尺寸，形状和颜色的信纸。

87. 发明授权

US07295486B2 Memory and driving method therefor 有权
标题翻译：记忆和驾驶方法
公开(公告)号：US07295486B2
公开(公告)日：2007-11-13
申请号：US11391990
申请日：2006-03-29
申请人： Chung-Kuang Chen
发明人： Chung-Kuang Chen
IPC分类号： G11C8/00
CPC分类号： G11C16/0491 , G11C17/126
摘要： A memory and a driving method therefor is provided. A j-th bank select MOS transistor is coupled to a j-th bit line and controlled by a bank select line. A j-th BD region is coupled to the j-th bank select MOS transistor. Gate(i, j) of memory cell M (i, j) is coupled to the i-th word line, the first source/drain(i, j) of memory cell M (i, j) is coupled to the j-th BD region, and the second source/drain(i, j) of memory cell M (i, j) is coupled to the first source/drain(i, j+1). In order to compensate the voltage drop resulting from the resistance of the j-th bit line and the j-th BD region, at least one of the voltage applied to the i-th word line and the voltage applied to the j-th bit line is adjusted according to the position of the bank which the memory cell M (i, j) belongs to.
摘要翻译：提供了一种存储器及其驱动方法。第j组选择MOS晶体管被耦合到第j位线并由存储体选择线控制。第j个BD区域耦合到第j个存储体选择MOS晶体管。存储单元M（i，j）的门（i，j）被耦合到第i个字线，存储单元M（i，j）的第一源/漏（i，j）并且存储单元M（i，j）的第二源极/漏极（i，j）耦合到第一源极/漏极（i，j + 1）。为了补偿由第j位线和第j个BD区域的电阻引起的电压降，施加到第i个字线的电压和施加到第j个位线的电压中的至少一个根据存储单元M（i，j）所属的存储体的位置来调整行。

88. 发明申请

US20070258060A1 HOOD FOR IMMERSION LITHOGRAPHY 有权
标题翻译：假设沉默
公开(公告)号：US20070258060A1
公开(公告)日：2007-11-08
申请号：US11427434
申请日：2006-06-29
申请人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
发明人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
IPC分类号： G03B27/52
CPC分类号： G03F7/70341
摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least one of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要翻译：光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。所述加热元件包括以下至少一种：不溶于所述流体以密封所述流体保持模块中的所述加热元件的密封剂; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

89. 发明授权

US07286412B1 Method and apparatus to improve nonvolatile memory data retention 有权
标题翻译：提高非易失性存储器数据保留的方法和装置
公开(公告)号：US07286412B1
公开(公告)日：2007-10-23
申请号：US11382350
申请日：2006-05-09
申请人： Chung Kuang Chen
发明人： Chung Kuang Chen
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C16/3431
摘要： Disclosed are apparatuses, methods, and manufacturing methods relating to improving data retention in nonvolatile memory. In many embodiments, monitor reference currents in addition to a normal reference current are used to determine whether to refresh the data memory.
摘要翻译：公开了与改善非易失性存储器中的数据保持有关的装置，方法和制造方法。在许多实施例中，除了正常参考电流之外，监视参考电流被用于确定是否刷新数据存储器。

90. 发明申请

US20070223266A1 One-time-programmable (OTP) memory device and method for testing the same 有权
标题翻译：一次性可编程（OTP）存储器件及其测试方法
公开(公告)号：US20070223266A1
公开(公告)日：2007-09-27
申请号：US11388905
申请日：2006-03-24
申请人： Chung-Kuang Chen
发明人： Chung-Kuang Chen
IPC分类号： G11C17/00 , G11C29/00 , G11C7/00
CPC分类号： G11C29/52 , G11C17/14 , G11C2216/26
摘要： An OTP memory device and method for testing the same is disclosed. The memory device includes a number of memory cells and each memory cell has an initial threshold voltage. Each memory cell is programmed to have a first threshold voltage larger than a maximum value of the initial threshold voltages in the test program operation. When the memory device is test pass, the memory device is directly provided for a user program operation without need of an erase operation.
摘要翻译：公开了一种OTP存储器件及其测试方法。存储器件包括多个存储器单元，并且每个存储器单元具有初始阈值电压。每个存储器单元被编程为在测试程序操作中具有大于初始阈值电压的最大值的第一阈值电压。当存储器件被测试通过时，存储器件直接被提供用于用户编程操作而不需要擦除操作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式