专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070258060A1 HOOD FOR IMMERSION LITHOGRAPHY 有权
标题翻译：假设沉默
公开(公告)号：US20070258060A1
公开(公告)日：2007-11-08
申请号：US11427434
申请日：2006-06-29
申请人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
发明人： Li-Jui CHEN , Tzung-Chi FU , Ching-Yu CHANG , Fu-Jye LIANG , Lin-Hung SHIU , Chun-Kuang CHEN , Tsai-Sheng GAU
IPC分类号： G03B27/52
CPC分类号： G03F7/70341
摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; a fluid retaining module configured to hold a fluid in a space between the imaging lens module and a substrate on the substrate stage; and a heating element configured in the fluid retaining module and adjacent to the space. The heating element includes at least one of following: a sealant insoluble to the fluid for sealing the heating element in the fluid retaining module; a sealed opening configured in one of top portion and side portion of the fluid retaining module for sealing the heating element in the fluid retaining module; and/or a non-uniform temperature compensation device configured with the heating element.
摘要翻译：光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 流体保持模块，被配置为将流体保持在所述成像透镜模块和所述基板载台上的基板之间的空间中; 以及配置在所述流体保持模块中且与所述空间相邻的加热元件。所述加热元件包括以下至少一种：不溶于所述流体以密封所述流体保持模块中的所述加热元件的密封剂; 密封开口，其构造在流体保持模块的顶部和侧部之一中，用于密封流体保持模块中的加热元件; 和/或配置有加热元件的不均匀的温度补偿装置。

2. 发明申请

US20180077274A1 SMART PHONE WITH A TEXT RECOGNITION MODULE 审中-公开
公开(公告)号：US20180077274A1
公开(公告)日：2018-03-15
申请号：US15808864
申请日：2017-11-09
申请人： Chi-Wen LIU , Ching-Yu CHANG , Kuo-Ching CHIANG
发明人： Chi-Wen LIU , Ching-Yu CHANG , Kuo-Ching CHIANG
IPC分类号： H04M1/253 , H04W88/06 , H04M1/725
CPC分类号： H04M1/2535 , G10L13/00 , G10L15/26 , H04L65/403 , H04L69/28 , H04M1/72502 , H04M1/72519 , H04M2250/02 , H04M2250/06 , H04W4/80 , H04W84/12 , H04W88/06
摘要： A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

3. 发明申请

US20090011374A1 METHOD AND MATERIAL FOR FORMING HIGH ETCH RESISTANT DOUBLE EXPOSURE PATTERNS 有权
标题翻译：用于形成高耐蚀双重曝光图案的方法和材料
公开(公告)号：US20090011374A1
公开(公告)日：2009-01-08
申请号：US12205509
申请日：2008-09-05
申请人： Ching-Yu CHANG , Chin-Hsiang LIN
发明人： Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/405
摘要： The present invention includes a lithography method comprising forming a first patterned resist layer including at least one opening therein over a substrate. A protective layer is formed on the first patterned resist layer and the substrate whereby a reaction occurs at the interface between the first patterned resist layer and the protective layer to form a reaction layer over the first patterned resist layer. The non-reacted protective layer is then removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.
摘要翻译：本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化抗蚀剂层。在第一图案化抗蚀剂层和基板上形成保护层，由此在第一图案化抗蚀剂层和保护层之间的界面处发生反应，以在第一图案化抗蚀剂层上形成反应层。然后除去未反应的保护层。此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内。然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

4. 发明申请

US20110183273A1 Water Mark Defect Prevention for Immersion Lithography 有权
标题翻译：浸水光刻防水标识缺陷
公开(公告)号：US20110183273A1
公开(公告)日：2011-07-28
申请号：US13079942
申请日：2011-04-05
申请人： Ching-Yu CHANG
发明人： Ching-Yu CHANG
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
摘要： A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
摘要翻译：一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

5. 发明申请

US20100255427A1 CONFORMAL PHOTO-SENSITIVE LAYER AND PROCESS 审中-公开
标题翻译：一致的感光层和工艺
公开(公告)号：US20100255427A1
公开(公告)日：2010-10-07
申请号：US12751250
申请日：2010-03-31
申请人： Chien-Wei WANG , Victor HUANG , Ching-Yu CHANG
发明人： Chien-Wei WANG , Victor HUANG , Ching-Yu CHANG
IPC分类号： G03F7/20
CPC分类号： G03F7/0751 , G03F7/0046 , G03F7/0048 , G03F7/0752 , G03F7/085 , G03F7/11 , H01L21/0271
摘要： The present disclosure provides a method for etching a substrate. The method includes forming a patterned photo-sensitive layer on the substrate; applying an etching chemical fluid to the substrate, wherein the patterned photo-sensitive layer includes an adhesion promoter and/or hydrophobic additive; removing the etching chemical fluid; and removing the resist pattern.
摘要翻译：本公开提供了蚀刻基板的方法。该方法包括在衬底上形成图案化感光层; 将蚀刻化学流体施加到所述基底，其中所述图案化感光层包括粘合促进剂和/或疏水性添加剂; 去除蚀刻化学液体; 并去除抗蚀剂图案。

6. 发明申请

US20080076038A1 SURFACE SWITCHABLE PHOTORESIST 有权
标题翻译：表面可切换光电
公开(公告)号：US20080076038A1
公开(公告)日：2008-03-27
申请号：US11534289
申请日：2006-09-22
申请人： Ching-Yu CHANG , Chih-Cheng CHIU
发明人： Ching-Yu CHANG , Chih-Cheng CHIU
IPC分类号： G03F1/00 , G03C1/00
CPC分类号： G03F7/2041 , G03F7/0382 , G03F7/0392 , G03F7/168
摘要： A material is provided for use in an immersion lithographic process of a semiconductor substrate. The material includes a photo-sensitive polymer configured to turn soluble to a base solution in response to reaction with an acid and at least one of either a base soluble polymer or an acid labile polymer. The base soluble polymer is configured to turn soluble to water in response to reaction with a developer solution. The acid labile polymer is configured to turn soluble to water after releasing a leaving group in reaction to the acid.
摘要翻译：提供了用于半导体衬底的浸没式光刻工艺中的材料。该材料包括光敏聚合物，其被配置为响应于与酸和碱溶性聚合物或酸不稳定聚合物中的至少一种而发生反应而转化为碱溶液。基础可溶性聚合物被配置为响应于与显影剂溶液的反应而使水溶解。酸不稳定聚合物被配置成在释放离去基团以反应酸之后将其溶于水。

7. 发明申请

US20070037410A1 METHOD FOR FORMING A LITHOGRAPHY PATTERN 有权
标题翻译：形成图形图案的方法
公开(公告)号：US20070037410A1
公开(公告)日：2007-02-15
申请号：US11426233
申请日：2006-06-23
申请人： Ching-Yu CHANG , Chin-Hsiang LIN , Burn Jeng LIN
发明人： Ching-Yu CHANG , Chin-Hsiang LIN , Burn Jeng LIN
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/3081 , H01L21/3086
摘要： A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.
摘要翻译：光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

8. 发明申请

US20070037089A1 STRUCTURE AND METHOD FOR IMPROVING PHOTORESIST PATTERN ADHESION 有权
标题翻译：用于改善光刻胶图案粘结的结构和方法
公开(公告)号：US20070037089A1
公开(公告)日：2007-02-15
申请号：US11427721
申请日：2006-06-29
申请人： Ching-Yu CHANG
发明人： Ching-Yu CHANG
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： An anti-reflective coating comprises a plurality of main backbone chains, and at least one long free polymer chain coupled to at least one of the plurality of main backbone chains.
摘要翻译：抗反射涂层包含多个主要主链，以及至少一个与多个主要主链中的至少一个连接的长自由聚合物链。

9. 发明申请

US20120258400A1 NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION 有权
标题翻译：新型TARC材料用于降低水分降低
公开(公告)号：US20120258400A1
公开(公告)日：2012-10-11
申请号：US13525796
申请日：2012-06-18
申请人： Ching-Yu CHANG
发明人： Ching-Yu CHANG
IPC分类号： G03F7/11
CPC分类号： G02B1/111 , G03F7/091 , G03F7/11 , G03F7/2041 , Y10S430/111
摘要： A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.
摘要翻译：在光刻工艺中使用的涂料。在一个实例中，设置在材料层上的涂层材料包括聚合物和化学键合到聚合物上的淬火剂捕集器。淬火捕集器基本上中和从材料层扩散到涂层材料中的任何猝灭剂。

10. 发明申请

US20090096090A1 Photolithography Process and Photomask Structure Implemented in a Photolithography Process 有权
标题翻译：光刻工艺和光掩模结构在光刻工艺中实现
公开(公告)号：US20090096090A1
公开(公告)日：2009-04-16
申请号：US12244857
申请日：2008-10-03
申请人： Ching-Yu CHANG
发明人： Ching-Yu CHANG
IPC分类号： H01L29/40
CPC分类号： G03F7/70441 , G03F1/36
摘要： In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.
摘要翻译：在光刻工艺中，在基板上形成光致抗蚀剂层。光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。将基板暴露于通过光掩模的光辐射。然后将光致抗蚀剂层显影以形成图案图像。虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式