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    • 81. 发明授权
    • Method of producing a piezoelectric/electrostrictive actuator
    • 制造压电/电致伸缩致动器的方法
    • US5681410A
    • 1997-10-28
    • US013046
    • 1993-02-04
    • Yukihisa TakeuchiKoji Kimura
    • Yukihisa TakeuchiKoji Kimura
    • H01L41/047H01L41/09H01L41/313H01L41/314C04B37/00
    • H01L41/0973H01L41/081H01L41/313H01L41/314
    • A method of producing a piezoelectric/electrostrictive actuator including a ceramic substrate and a piezoelectric/electrostrictive portion, including the steps of: superposing on each other a first and a second green sheet which give, by firing thereof, a first layer and a second layer of ceramic substrate, respectively, the first green sheet having at least one opening formed through a thickness thereof; firing the first and second green sheets to form the ceramic substrate such that the second layer cooperates with the at least one opening in the first layer to define at least one recess which has a bottom surface defining a thin-walled portion of the ceramic substrate; and forming the piezoelectric/electrostrictive portion on the thin-walled portion of the ceramic substrate.
    • 一种制造包括陶瓷基板和压电/电致伸缩部分的压电/电致伸缩致动器的方法,包括以下步骤:将第一和第二生片叠加在第一和第二生片上,所述第一和第二生片通过烧制而形成第一层和第二层 分别具有通过其厚度形成的至少一个开口的第一生片; 烧制第一和第二生片以形成陶瓷基片,使得第二层与第一层中的至少一个开口配合以限定至少一个具有限定陶瓷基片的薄壁部分的底表面的凹槽; 以及在陶瓷基板的薄壁部分上形成压电/电致伸缩部分。
    • 82. 发明授权
    • Method of fabricating a bipolar transistor operable at high speed
    • 制造可高速运行的双极晶体管的方法
    • US5614425A
    • 1997-03-25
    • US622270
    • 1996-03-27
    • Koji KimuraHiroshi Naruse
    • Koji KimuraHiroshi Naruse
    • H01L29/73H01L21/331H01L29/732H01L29/737H01L21/265
    • H01L29/66287H01L29/732Y10S148/163
    • An N type diffusion layer as a collector is formed on a P type silicon substrate, and a field oxide film is formed on this diffusion layer. An MoSi.sub.2 film is formed on this field oxide film and a first opening is formed on those field oxide film and MoSi.sub.2 film to expose the diffusion layer. An N type layer is selectively epitaxially grown only on the bottom of the first opening. A base layer is formed on the N type layer, the side wall of the first opening and the MoSi.sub.2 film. The base layer on the N type layer is formed by epitaxial growth, while the base layer on the side wall of the first opening and the MoSi.sub.2 film is formed in a polycrystalline state. A first silicon oxide film is formed on this based layer. The first silicon oxide film is thinner on the polycrystalline base layer than on the epitaxially grown base layer. The first silicon oxide film is subjected to anisotropic etching to expose only the surface of the epitaxially grown base layer. An N type silicon film as an emitter is selectively grown only on this exposed base layer.
    • 在P型硅衬底上形成作为集电体的N型扩散层,在该扩散层上形成场氧化膜。 在该场氧化膜上形成MoSi 2膜,在该场氧化膜和MoSi 2膜上形成第一开口,使扩散层露出。 仅在第一开口的底部选择性地外延生长N型层。 在N型层,第一开口的侧壁和MoSi 2膜上形成基层。 通过外延生长形成N型层上的基底层,而第一开口的侧壁上的基底层和MoSi 2膜形成为多晶态。 在该基层上形成第一氧化硅膜。 第一氧化硅膜在多晶基底层上比在外延生长的基底层上薄。 对第一氧化硅膜进行各向异性蚀刻,仅露出外延生长的基底层的表面。 作为发射极的N型硅膜仅在该露出的基底层上选择性地生长。
    • 85. 发明授权
    • Method of manufacturing bipolar transistor operated at high speed
    • 制造高速运行的双极晶体管的方法
    • US5244533A
    • 1993-09-14
    • US815786
    • 1992-01-02
    • Koji KimuraShin-ichi Taka
    • Koji KimuraShin-ichi Taka
    • H01L21/331H01L29/10
    • H01L29/66272H01L29/1004Y10S148/01Y10S148/124
    • According to this invention, in a method of manufacturing a bipolar transistor, a first oxide film, a nitride film, a first polysilicon film containing boron, and a second oxide film are formed on a substrate. A first opening is formed in the second oxide film and the first polysilicon film. The nitride film and the first oxide film are etched in and near the first opening to form overhung portions between the substrate and the first semiconductor film around the first opening. A second polysilicon film for burying the overhung portions is formed on the entire surface of the resultant structure. Thereafter, boron in the second polysilicon film is thermally diffused in the substrate to form an external base region and a link region. The second polysilicon film is etched to leave the second polysilicon film at only the overhung portions. After an internal base region formed in the substrate. Thereafter, an emitter region formed in the internal base region.
    • 根据本发明,在制造双极晶体管的方法中,在基板上形成第一氧化膜,氮化物膜,含有硼的第一多晶硅膜和第二氧化物膜。 在第二氧化物膜和第一多晶硅膜中形成第一开口。 在第一开口内和附近蚀刻氮化物膜和第一氧化物膜,以在第一开口周围的基板和第一半导体膜之间形成悬垂部分。 用于掩埋悬臂部分的第二多晶硅膜形成在所得结构的整个表面上。 此后,第二多晶硅膜中的硼在衬底中热扩散以形成外部基极区域和连接区域。 蚀刻第二多晶硅膜以仅在悬垂部分离开第二多晶硅膜。 在形成在衬底中的内部基极区域之后。 此后,形成在内部基极区域中的发射极区域。
    • 88. 发明授权
    • Voltage controlled oscillator calibration
    • 压控振荡器校准
    • US08736322B2
    • 2014-05-27
    • US13298057
    • 2011-11-16
    • Koji KimuraAlireza Zolfaghari
    • Koji KimuraAlireza Zolfaghari
    • H03L7/00
    • H03L7/00
    • A mobile communication device is provided that has a transceiver including a voltage controlled oscillator (VCO) and a calibration circuit for calibrating the VCO. The calibration circuit includes a logic block configured to estimate a calibration value for a tuning of the VCO to a desired frequency, and an asynchronous counter configured to execute a counting sequence to identify a frequency of the VCO after the tuning of the VCO using the calibration value, where the calibration circuit is configured to determine a tuned calibration value for producing the desired frequency from the counting sequence.
    • 提供一种具有收发器的移动通信设备,该收发器包括压控振荡器(VCO)和用于校准VCO的校准电路。 校准电路包括被配置为估计用于将VCO调谐到期望频率的校准值的逻辑块,以及被配置为执行计数序列以在使用校准调谐VCO之后识别VCO的频率的异步计数器 值,其中校准电路被配置为确定用于从计数序列产生期望频率的调谐校准值。