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81. 发明授权

US08269226B2 Light emitting device, and light emitting device package 有权
标题翻译：发光器件和发光器件封装
公开(公告)号：US08269226B2
公开(公告)日：2012-09-18
申请号：US13215397
申请日：2011-08-23
申请人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , Kwang Ki Choi , June O Song
发明人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , Kwang Ki Choi , June O Song
IPC分类号： H01L27/15
CPC分类号： H01L33/44 , H01L33/20 , H01L33/382 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.
摘要翻译：一种包括发光结构的发光器件，包括第二导电类型半导体层，有源层和第一导电类型半导体层，以及设置在发光结构侧的第一保护层，其中第一保护层重叠第一导电类型半导体层在垂直方向上。

82. 发明申请

US20120138969A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING DEVICE WITH THE SAME 有权
标题翻译：发光装置，发光装置包装，以及具有该发光装置的照明装置
公开(公告)号：US20120138969A1
公开(公告)日：2012-06-07
申请号：US13242345
申请日：2011-09-23
申请人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , June O Song , Kwang Ki Choi
发明人： Ji Hyung Moon , Sang Youl Lee , Chung song Kim , June O Song , Kwang Ki Choi
IPC分类号： H01L33/60
CPC分类号： H01L33/382 , F21K9/00 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/387 , H01L33/405 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.
摘要翻译：本发明涉及一种发光器件，发光器件封装以及具有该发光器件的照明器件。发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层，形成在与第二导电类型半导体层连接的发光结构的下侧上的第二电极层与通过第二导电类型半导体层和有源层的第一导电类型半导体层接触的第一电极层和形成在第二电极层和第一电极层之间的绝缘层，在第二导电类型半导体层和第一电极层，以及有源层和第一电极层之间。

83. 发明申请

US20120104453A1 NITRIDE LIGHT EMITTING DEVICE OF USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：使用基板分解防止层的氮化物发光装置及其制造方法
公开(公告)号：US20120104453A1
公开(公告)日：2012-05-03
申请号：US13344947
申请日：2012-01-06
申请人： June O. SONG
发明人： June O. SONG
IPC分类号： H01L33/42
CPC分类号： H01L33/02 , H01L33/0079
摘要： A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
摘要翻译：发光装置具有使用从由氮化硼（B-N），碳化硅（Si-C）和氮化硅（Si-C）组成的组中选出的至少一种作为基质的基板分解防止层 -N），并且被图案化成预定的形状; 形成在所述基板分解防止层上的n型氮化物覆盖层; 形成在所述n型氮化物覆盖层上的氮化物有源层; 形成在氮化物有源层上的p型氮化物覆盖层; 形成在p型氮化物覆盖层上的p型欧姆接触层; 形成在p型欧姆接触层上的p型电极焊盘; n型欧姆接触层，通过基板分解防止层的图案化区域与n型氮化物覆盖层电连接; 以及形成在n型欧姆接触层下面的n型电极焊盘。

84. 发明申请

US20120001196A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
标题翻译：发光装置，其制造方法，发光装置包装和照明系统
公开(公告)号：US20120001196A1
公开(公告)日：2012-01-05
申请号：US13175424
申请日：2011-07-01
申请人： Kwang Ki CHOI , Hwan Hee JEONG , Ji hyung MOON , Sang Youl LEE , June O SONG , Se Yeon JUNG , Tae Yeon SEONG
发明人： Kwang Ki CHOI , Hwan Hee JEONG , Ji hyung MOON , Sang Youl LEE , June O SONG , Se Yeon JUNG , Tae Yeon SEONG
IPC分类号： H01L29/12 , H01L33/62 , H01L33/02
CPC分类号： H01L33/22 , H01L33/14 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.
摘要翻译：提供了发光器件，其制造方法，发光器件封装和照明系统。发光器件包括：包括第一导电半导体层，有源层和第二导电半导体层的发光结构层; 设置在所述第二导电半导体层的至少一部分上的氧化物突起; 以及在第二导电半导体层和氧化物突起上的电流扩展层。

85. 发明授权

US08053786B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US08053786B2
公开(公告)日：2011-11-08
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发光氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电性由形成在界面改性层上的透明导电材料构成的薄膜层; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

86. 发明申请

US20110210362A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE THEREOF 有权
标题翻译：发光器件及其发光器件封装
公开(公告)号：US20110210362A1
公开(公告)日：2011-09-01
申请号：US13102478
申请日：2011-05-06
申请人： Sang Youl Lee , Ji Hyung Moon , June O. Song , Kwang Ki Choi , Chung Song Kim , Hwan Hee Jeong
发明人： Sang Youl Lee , Ji Hyung Moon , June O. Song , Kwang Ki Choi , Chung Song Kim , Hwan Hee Jeong
IPC分类号： H01L33/60 , H01L33/58
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.
摘要翻译：发光器件包括发光结构，其包括第二导电类型半导体层，有源层和第一导电类型半导体层，布置在发光结构下的第二电极层，第一电极层，至少部分延伸到接触通过第二导电类型半导体层和有源层的第一导电类型半导体层，以及布置在第二电极层和第一电极层之间，在第二导电类型半导体层和第一电极层之间以及介于所述有源层和所述第一电极层，其中所述与所述第一导电型半导体层接触的所述第一电极层的所述至少一部分具有粗糙度。

87. 发明申请

US20110198991A1 LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND ILLUMINATION SYSTEM 有权
标题翻译：发光装置，其制造方法，发光装置包装和照明系统
公开(公告)号：US20110198991A1
公开(公告)日：2011-08-18
申请号：US13028686
申请日：2011-02-16
申请人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O Song , Kwang Ki Choi
IPC分类号： H01J1/62 , H01L33/32 , H01L33/26 , H01L33/40 , H01L33/22 , H01L33/60
CPC分类号： H01L33/62 , H01L33/08 , H01L33/20 , H01L33/42 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.
摘要翻译：公开了发光器件，其制造方法，发光器件封装和照明系统。发光器件包括透射衬底，透射衬底上的欧姆层，欧姆层上的发光结构，并且包括第一和第二半导体层之间的第一导电半导体层，第二导电半导体层和有源层，透射基板的底面上的电极层，以及通过透射基板将发光结构与电极层电连接的导电通孔，其中透射基板的面积从下部向其上部增加。

88. 发明申请

US20110193117A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的发光装置包装
公开(公告)号：US20110193117A1
公开(公告)日：2011-08-11
申请号：US13011479
申请日：2011-01-21
申请人： Hwan Hee JEONG , Ji Hyung Moon , Sang Youl Lee , June O. Song
发明人： Hwan Hee JEONG , Ji Hyung Moon , Sang Youl Lee , June O. Song
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.
摘要翻译：公开了一种发光器件和发光器件封装。发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，第一导电类型的电极半导体层，第二导电类型半导体层下面的反射层，在第二导电类型半导体层的下表面的外周部分处的保护层，以及在保护层上包括化合物半导体的光提取结构。

89. 发明申请

US20110193113A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的发光装置包装
公开(公告)号：US20110193113A1
公开(公告)日：2011-08-11
申请号：US12986592
申请日：2011-01-07
申请人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O. Song , Kwang Ki Choi
发明人： Hwan Hee Jeong , Sang Youl Lee , Ji Hyung Moon , June O. Song , Kwang Ki Choi
IPC分类号： H01L33/08 , H01L33/38 , H01L33/58
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/382 , H01L33/385 , H01L33/62 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.
摘要翻译：公开了一种发光器件和具有该发光器件的发光器件封装。发光器件包括发光结构，其包括第一导电半导体层，第一导电半导体层下方的有源层和有源层下的第二导电半导体层; 第二导电半导体层下面的第一电极层; 电极，其包括与所述第一导电半导体层的底表面的一部分接触的顶表面; 以及用于覆盖电极的外周面的绝缘构件，其中绝缘构件的一部分从电极的底面延伸到第二导电半导体层和第一电极层之间的区域中。

90. 发明授权

US07989244B2 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US07989244B2
公开(公告)日：2011-08-02
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

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