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81. 发明授权

US08709926B2 Plasma doping method and plasma doping apparatus 有权
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US08709926B2
公开(公告)日：2014-04-29
申请号：US12952807
申请日：2010-11-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/265 , H01L21/223
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412
摘要： In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.
摘要翻译：为了实现能够进行稳定的低密度掺杂的等离子体掺杂方法，在从气体供给装置将预定气体引入真空室的同时用泵进行排气，真空室的压力保持在预定的压力和高频功率从高频电源提供给线圈。在真空室中产生等离子体之后，真空室的压力降低，并且对放置在基板电极上的基板进行低密度等离子体掺杂。此外，真空室的压力逐渐降低，并且高频功率逐渐增加，从而对放置在基板电极上的基板进行低密度等离子体掺杂。此外，提供给基板电极的高频功率的正向功率Pf和反射功率Pr被高速采样，并且当功率差Pf-Pr相对于时间积分的值达到预定值时，高频电源的供应被暂停。

82. 发明授权

US08703613B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08703613B2
公开(公告)日：2014-04-22
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/44 , H01L27/14
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

83. 发明申请

US20130183791A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, SOLAR CELL HAVING SAME, AND METHOD FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底，具有该表面的太阳能电池及其制造方法
公开(公告)号：US20130183791A1
公开(公告)日：2013-07-18
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

84. 发明授权

US08404573B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08404573B2
公开(公告)日：2013-03-26
申请号：US13611939
申请日：2012-09-12
申请人： Tomohiro Okumura , Yuichiro Sasaki , Satoshi Maeshima , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Satoshi Maeshima , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
摘要翻译：随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

85. 发明申请

US20120285818A1 PLASMA DOPING METHOD WITH GATE SHUTTER 失效
标题翻译：等离子切割方法与门开关
公开(公告)号：US20120285818A1
公开(公告)日：2012-11-15
申请号：US13560648
申请日：2012-07-27
申请人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： C23C14/34
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。提供了用于向样品电极提供高频电力的高频电源。通过驱动闸门并覆盖通过门来增强处理的均匀性。

86. 发明授权

US08129202B2 Plasma doping method and apparatus 失效
标题翻译：等离子体掺杂方法和装置
公开(公告)号：US08129202B2
公开(公告)日：2012-03-06
申请号：US12648142
申请日：2009-12-28
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

87. 发明授权

US07863168B2 Plasma doping method and plasma doping apparatus 有权
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US07863168B2
公开(公告)日：2011-01-04
申请号：US11531637
申请日：2006-09-13
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/26 , H01L21/265
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412
摘要： In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.
摘要翻译：为了实现能够进行稳定的低密度掺杂的等离子体掺杂方法，在从气体供给装置将预定气体引入真空室的同时用泵进行排气，真空室的压力保持在预定的压力和高频功率从高频电源提供给线圈。在真空室中产生等离子体之后，真空室的压力降低，并且对放置在基板电极上的基板进行低密度等离子体掺杂。此外，真空室的压力逐渐降低，并且高频功率逐渐增加，从而对放置在基板电极上的基板进行低密度等离子体掺杂。此外，提供给基板电极的高频功率的正向功率Pf和反射功率Pr被高速采样，并且当功率差Pf-Pr相对于时间积分的值达到预定值时，高频电源的供应被暂停。

88. 发明授权

US07858537B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US07858537B2
公开(公告)日：2010-12-28
申请号：US11517456
申请日：2006-09-08
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/324 , H01L21/477
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
摘要翻译：在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频功率，将硼引入到衬底表面附近。

89. 发明授权

US07682954B2 Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method 有权
标题翻译：杂质导入方法，杂质导入装置以及利用该方法制造的半导体装置
公开(公告)号：US07682954B2
公开(公告)日：2010-03-23
申请号：US10599205
申请日：2005-03-17
申请人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
发明人： Yuichiro Sasaki , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01J37/32412 , H01L21/26513
摘要： An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
摘要翻译：形成具有盒状杂质分布的杂质区域。杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布，形状。

90. 发明授权

US07575987B2 Method of plasma doping 有权
标题翻译：等离子体掺杂法
公开(公告)号：US07575987B2
公开(公告)日：2009-08-18
申请号：US11585938
申请日：2006-10-25
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H01L21/26
CPC分类号： H01J37/32412 , C23C8/36 , C23C14/48 , H01J37/32467 , H01L21/2236 , H05H1/46
摘要： A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.
摘要翻译：提供一种具有在其中限定室的真空容器的掺杂装置。容器具有由电介质材料制成的部分，并且在设置在腔室中的衬底中掺杂杂质。还提供了一种用于通过在容器的一部分形成电场来产生等离子体的等离子体源，使得等离子体中的离子撞击容器的部分，将杂质从容器的一部分供给到房间。

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