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1. 发明授权

US08652953B2 Plasma doping method with gate shutter 失效
标题翻译：等离子体掺杂法与栅极快门
公开(公告)号：US08652953B2
公开(公告)日：2014-02-18
申请号：US13560648
申请日：2012-07-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。提供了用于向样品电极提供高频电力的高频电源。通过驱动闸门并覆盖通过门来增强处理的均匀性。

2. 发明授权

US07759254B2 Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device 有权
标题翻译：形成杂质导入层的方法，用于清洗待加工物体的方法，用于引入杂质的方法及其制造方法
公开(公告)号：US07759254B2
公开(公告)日：2010-07-20
申请号：US10569464
申请日：2004-08-25
申请人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/2236
摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.
摘要翻译：公开了一种形成杂质导入层的方法。该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行固体基质。

3. 发明申请

US20100098837A1 PLASMA DOPING METHOD AND APPARATUS 失效
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20100098837A1
公开(公告)日：2010-04-22
申请号：US12648142
申请日：2009-12-28
申请人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/52 , H05H1/24 , C23C16/448
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

4. 发明授权

US07622725B2 Impurity introducing apparatus and impurity introducing method 失效
公开(公告)号：US07622725B2
公开(公告)日：2009-11-24
申请号：US12122492
申请日：2008-05-16
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： G21K1/093 , H01J37/08
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

5. 发明申请

US20090140174A1 Impurity Introducing Apparatus and Impurity Introducing Method 审中-公开
标题翻译：杂质介绍仪器和杂质介绍方法
公开(公告)号：US20090140174A1
公开(公告)日：2009-06-04
申请号：US11887371
申请日：2006-03-29
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01J37/317 , H01J37/32
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision.In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

6. 发明申请

US20090068769A1 Method and Apparatus for Plasma Processing 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20090068769A1
公开(公告)日：2009-03-12
申请号：US11887821
申请日：2006-04-04
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , G21K5/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32412
摘要： An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample.Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor 14 and an arithmetic device 15.
摘要翻译：本发明的目的是提供一种等离子体处理的方法和装置，其可以精确地监测施加在样品表面上的离子电流。通过涡轮分子泵3通过排气口11排出预定气体，同时从气体供给装置2将真空室1内的气体导入，并通过压力调节将真空室1内的压力保持在规定值用于等离子体源的高频电源5向设置在电介质窗口7附近的线圈8提供高频电力，以在真空室1内产生电感耦合等离子体。一高频电源10用于提供了用于向样品电极6提供高频电力的样品电极。在样品电极高频电源和样品电极6之间设置用于采样电极和高频传感器14的匹配电路13。可以使用高电平来准确地监测施加到样品表面的离子电流频率传感器14和运算装置15。

7. 发明申请

US20080146009A1 Method for Introducing Impurities 失效
标题翻译：引入杂质的方法
公开(公告)号：US20080146009A1
公开(公告)日：2008-06-19
申请号：US10597716
申请日：2005-02-04
申请人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
发明人： Yuichiro Sasaki , Tomohiro Okumura , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama , Satoshi Maeshima , Katsumi Okashita
IPC分类号： H01L21/22
CPC分类号： H01L21/2236
摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
摘要翻译：为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

8. 发明申请

US20070074813A1 Method and apparatus for plasma doping 审中-公开
标题翻译：等离子体掺杂的方法和装置
公开(公告)号：US20070074813A1
公开(公告)日：2007-04-05
申请号：US11603146
申请日：2006-11-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： C23F1/00
CPC分类号： H01J37/32412 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/3299 , H01L21/2236
摘要： A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
摘要翻译：一种用于杂质注入的方法，其中将基板放置在设置在其中将被引入真空的室内的台上，并且还提供注入杂质。将第一高频电力施加到等离子体发生元件，从而产生等离子体，使得腔室中的杂质注入基板。此外，第二高频电力被施加到桌子上。检测到的是室内等离子体的状态，以及表中的电压或电流。控制器根据检测到的等离子体的状态和/或检测到的电压或电流来控制第一和第二高频电源中的至少一个，从而控制待植入的杂质的注入浓度。

9. 发明授权

US08288259B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08288259B2
公开(公告)日：2012-10-16
申请号：US12950048
申请日：2010-11-19
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
摘要翻译：随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

10. 发明授权

US07858155B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07858155B2
公开(公告)日：2010-12-28
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8，在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体通过改善样品电极6的结构，使硅晶片9的层成为无定形。

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