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81. 发明申请

US20100165224A1 LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20100165224A1
公开(公告)日：2010-07-01
申请号：US12722142
申请日：2010-03-11
申请人： Byung Chul Ahn , Joo Soo Lim , Byung Ho Park
发明人： Byung Chul Ahn , Joo Soo Lim , Byung Ho Park
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/134363 , G02F2001/136231 , G02F2001/13629 , G02F2001/136295
摘要： A method of fabricating a liquid crystal display device includes in a first mask process, forming a first mask pattern group including a gate line, a gate electrode connected to the gate line and a common line parallel to the gate line that have a first conductive layer group structure having at least double conductive layers. A second mask process forms a gate insulating film on the first mask pattern group and a semiconductor pattern thereon. A third mask process forms a third mask pattern group including a data line, a source electrode connected to the data line and a drain electrode opposite the source electrode that have a second conductive layer group structure having at least double conductive layers, and a protective film interfacing with the third mask pattern group on the gate insulating film.
摘要翻译：一种制造液晶显示装置的方法包括：在第一掩模处理中，形成包括栅极线的第一掩模图案组，连接到栅极线的栅电极和与栅极线平行的公共线，所述栅极线具有第一导电层组结构具有至少双重导电层。第二掩模工艺在第一掩模图案组上形成栅极绝缘膜，并在其上形成半导体图案。第三掩模处理形成第三掩模图案组，其包括数据线，连接到数据线的源电极和与源电极相对的漏极，具有至少具有双重导电层的第二导电层组结构，以及保护膜与栅极绝缘膜上的第三掩模图案组接口。

82. 发明申请

US20090284676A1 Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法，使用其的液晶显示面板及其制造方法
公开(公告)号：US20090284676A1
公开(公告)日：2009-11-19
申请号：US12458784
申请日：2009-07-22
申请人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
发明人： Byung Chul Ahn , Byoung Ho Lim , Jae Jun Ahn
IPC分类号： G02F1/1368
CPC分类号： G02F1/136227 , G02F2001/136231 , H01L27/124 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.
摘要翻译：一种薄膜晶体管基板及其制造方法; 并且公开了一种使用该液晶显示面板的液晶显示面板及其制造方法，用于简化工艺。一种薄膜晶体管衬底，包括：衬底上的栅极线; 与栅极线交叉的数据线，其间具有栅极绝缘膜，以限定像素区域; 像素区域中的像素孔; 像素区域中的像素孔中的栅极绝缘膜上的由透明导电膜构成的像素电极; 以及薄膜晶体管，其包括连接到所述栅极线的栅电极，连接到所述数据线的源电极，连接到所述像素电极的漏电极以及限定所述源电极和所述漏电极之间的沟道的半导体层，其中，半导体层与包括数据线，源电极和漏电极的源极/漏极金属图案重叠; 其中，所述漏电极从所述半导体层向所述像素电极的上部突出，所述漏电极与所述像素电极连接; 并且其中半导体层从其与透明导电膜重叠的地方去除。

83. 发明申请

US20090239342A1 Thin Film Transistor Substrate of Horizontal Electric Field Type Liquid Crystal Display Device and Fabricating Method Thereof 失效
标题翻译：水平电场型液晶显示装置薄膜晶体管基板及其制造方法
公开(公告)号：US20090239342A1
公开(公告)日：2009-09-24
申请号：US12475130
申请日：2009-05-29
申请人： Byung Chul AHN , Oh Nam Kwon , Heung Lyul Cho
发明人： Byung Chul AHN , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , G02F1/134363 , G02F1/136213 , G02F1/1368 , G02F2001/136295 , H01L27/1288
摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.
摘要翻译：水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

84. 发明授权

US07553708B2 Fabricating method for a liquid crystal display of horizontal electric field applying type 有权
标题翻译：水平电场应用型液晶显示器的制造方法
公开(公告)号：US07553708B2
公开(公告)日：2009-06-30
申请号：US11529592
申请日：2006-09-29
申请人： Byung Chul Ahn , Byoung Ho Lim
发明人： Byung Chul Ahn , Byoung Ho Lim
IPC分类号： H01L29/04
CPC分类号： G02F1/13458 , G02F1/134363 , G02F2001/136236 , H01L27/124 , H01L27/1288
摘要： A liquid crystal display having an applied horizontal electric field comprising: a gate line; a common line substantially parallel to the gate line; a data line arranged to cross the gate line and the common line to define a pixel area; a thin film transistor formed at each crossing of the gate line and the data line; a common electrode formed in the pixel area and connected to the common line; a pixel electrode connected to the thin film transistor, wherein the horizontal electric field is formed between the pixel electrode and the common electrode in the pixel area; a gate pad formed with at least one conductive layer included in the gate line; a data pad formed with at least one conductive layer included in the data line; a common pad formed with at least one conductive layer included in the common line; a passivation film to expose at least one of the gate pad, the data pad and the common pad; and a driving integrated circuit mounted on a substrate to connect directly to one of the gate pad and the data pad.
摘要翻译：一种具有施加的水平电场的液晶显示器，包括：栅极线; 基本上平行于栅极线的公共线; 布置成跨越所述栅极线和所述公共线以限定像素区域的数据线; 形成在栅极线和数据线的每个交叉处的薄膜晶体管; 在像素区域中形成并连接到公共线的公共电极; 连接到所述薄膜晶体管的像素电极，其中在像素区域中的像素电极和公共电极之间形成水平电场; 栅极焊盘，其形成有包括在栅极线中的至少一个导电层; 数据焊盘，其形成有包括在所述数据线中的至少一个导电层; 公共焊盘，其形成有包括在所述公共线中的至少一个导电层; 钝化膜以暴露所述栅极焊盘，所述数据焊盘和所述公共焊盘中的至少一个; 以及安装在基板上以直接连接到所述栅极焊盘和所述数据焊盘之一的驱动集成电路。

85. 发明授权

US07528909B2 Liquid crystal display device and fabricating method having reflective electrode connecting pixel electrode with drain and upper storage capacitor electrodes at edge of transmission hole 有权
标题翻译：具有反射电极的液晶显示装置及其制造方法，该反射电极将透明孔的边缘处的漏极和上部存储电容器电极的像素电极连接
公开(公告)号：US07528909B2
公开(公告)日：2009-05-05
申请号：US11139501
申请日：2005-05-31
申请人： Byung Chul Ahn , Jong Woo Park
发明人： Byung Chul Ahn , Jong Woo Park
IPC分类号： G02F1/1335
CPC分类号： G02F1/13458 , G02F1/133555 , G02F1/13624 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629
摘要： A method of fabricating a LCD device includes forming a gate line, a gate electrode, and a pixel electrode having a double-layer structure on a first substrate using a first mask, the double-layer structure including first and second conductive layers; forming a first insulation film, a semiconductor pattern on the first insulation film, a source/drain pattern having an upper storage electrode, source and drain electrodes, a data line using a second mask, the data and gate lines defining a pixel region having transmission and reflection areas; forming a second insulation film on the source/drain pattern and a transmission hole by passing through the second insulation film to the second conductive layer in the transmission area using a third mask; and forming a reflective electrode in the reflection area using a fourth mask, the reflective electrode connecting the pixel electrode with the drain electrode and the storage electrode.
摘要翻译：一种制造LCD器件的方法包括：使用第一掩模在第一衬底上形成具有双层结构的栅极线，栅电极和像素电极，所述双层结构包括第一和第二导电层; 形成第一绝缘膜，第一绝缘膜上的半导体图案，具有上部存储电极的源极/漏极图案，源极和漏极，使用第二掩模的数据线，限定具有透射的像素区域的数据线和栅极线和反射区域; 在所述源极/漏极图案上形成第二绝缘膜，通过使用第三掩模将所述第二绝缘膜穿过所述透射区域中的所述第二导电层，形成透射孔; 以及使用第四掩模在所述反射区域中形成反射电极，所述反射电极将所述像素电极与所述漏电极和所述存储电极连接。

86. 发明授权

US07501298B2 Liquid crystal display panel and fabricating method thereof 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US07501298B2
公开(公告)日：2009-03-10
申请号：US11643653
申请日：2006-12-22
申请人： Byung Chul Ahn , Soon Sung Yoo , Oh Nam Kwon , Youn Gyoung Chang , Heung Lyul Cho , Seung Hee Nam , Jae Young Oh
发明人： Byung Chul Ahn , Soon Sung Yoo , Oh Nam Kwon , Youn Gyoung Chang , Heung Lyul Cho , Seung Hee Nam , Jae Young Oh
IPC分类号： H01L21/00
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136236 , H01L27/124 , H01L27/1288 , H01L29/66742
摘要： A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.
摘要翻译：液晶显示器（LCD）面板以较少数量的掩模工艺制造，并且包括薄膜晶体管（TFT）阵列基板和滤色器阵列基板。 TFT阵列基板包括彼此绝缘交叉以限定像素区域的栅极和数据线，设置在栅极和数据线的交叉处的TFT，保护TFT的钝化膜，与TFT部分重叠的像素电极，栅极焊盘连接到栅极线，以及连接到数据线的数据焊盘。栅极线，栅极和数据焊盘以及像素电极包括透明导电材料。栅极金属材料在透明导电材料上，其中TFT部分地与像素电极重叠。去除栅极和数据焊盘上的钝化膜以暴露包括在栅极和数据焊盘内的透明导电材料。

87. 发明授权

US07468527B2 Liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07468527B2
公开(公告)日：2008-12-23
申请号：US11137411
申请日：2005-05-26
申请人： Byung Chul Ahn
发明人： Byung Chul Ahn
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/136213 , G02F1/136286 , G02F2001/136236 , G02F2001/13629 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.
摘要翻译：薄膜晶体管基板和制造方法简化了工艺，并且扩大了存储电容器的电容值，而没有孔径比的任何减小。形成双层结构化栅极线的透明第一导电层和不透明第二导电层，具有台阶覆盖。在通过钝化膜的所述像素区域的像素孔内的栅极绝缘膜上设置像素电极以连接到薄膜晶体管。存储电容器与像素电极重叠，其间具有栅极绝缘膜，并且具有从第一导电层突出的下部存储电极。

88. 发明授权

US07425508B2 Liquid crystal display device and fabricating method thereof, and thin film patterning method applied thereto 有权
标题翻译：液晶显示装置及其制造方法及其应用的薄膜图案化方法
公开(公告)号：US07425508B2
公开(公告)日：2008-09-16
申请号：US11292059
申请日：2005-12-02
申请人： Byung Chul Ahn , Joo Soo Lim , Ji No Lee , Hee Young Kwack
发明人： Byung Chul Ahn , Joo Soo Lim , Ji No Lee , Hee Young Kwack
IPC分类号： H01L21/311
CPC分类号： G02F1/136227 , G02F2001/136236 , Y10S438/942 , Y10S438/946
摘要： A liquid crystal display device, including: a gate line on a substrate; a data line crossing the gate line with a gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern which forms a channel of the thin film transistor and overlaps along the data line; a passivation film covering the data line and the thin film transistor; and a pixel electrode on the gate insulating film in a pixel hole of the pixel area that penetrates the passivation film and connected to the thin film transistor, the pixel electrode on an inclined side surface of the passivation film to encompass the pixel hole, to form a border with the passivation film and having a thickness that decreases as it goes up the side surface of the passivation film.
摘要翻译：一种液晶显示装置，包括：基板上的栅极线; 在栅极线之间与栅极绝缘膜交叉的数据线，以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 半导体图案，其形成薄膜晶体管的沟道并沿数据线重叠; 覆盖数据线和薄膜晶体管的钝化膜; 以及像素电极，位于像素区域的穿透钝化膜并连接到薄膜晶体管的像素孔中的像素电极上，像素电极在钝化膜的倾斜侧表面上以包围像素孔，以形成与钝化膜的边界并且具有随着钝化膜的侧表面上升而减小的厚度。

89. 发明申请

US20080143903A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20080143903A1
公开(公告)日：2008-06-19
申请号：US12068361
申请日：2008-02-05
申请人： Byung Chul Ahn
发明人： Byung Chul Ahn
IPC分类号： G02F1/1343
CPC分类号： G02F1/136286 , G02F1/136213 , G02F2001/136236 , G02F2001/13629 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor substrate of a LCD device and a fabricating method thereof are disclosed for simplifying a fabricating process and enlarging a capacitance value of a storage capacitor without any reduction of aperture ratio. The LCD device includes: a double-layered gate line having a first transparent conductive layer and a second opaque conductive layer, the second opaque conductive layer have a step coverage; a gate insulation layer film on the gate line; a data line crossing the gate line to define a pixel region; a TFT connected to the gate line and the data line; a pixel electrode connected to the TFT via a contact hole of a protective film on the TFT; and a storage capacitor overlapping the pixel electrode and having a lower storage electrode formed of the first transparent conductive layer.
摘要翻译：公开了一种LCD器件的薄膜晶体管基板及其制造方法，用于简化制造工艺并扩大存储电容器的电容值，而不会降低开口率。 LCD装置包括：具有第一透明导电层和第二不透明导电层的双层栅极线，第二不透明导电层具有台阶覆盖; 栅极线上的栅极绝缘层膜; 与栅极线交叉以限定像素区域的数据线; 连接到栅极线和数据线的TFT; 通过TFT上的保护膜的接触孔与TFT连接的像素电极; 以及与所述像素电极重叠并具有由所述第一透明导电层形成的下部存储电极的存储电容器。

90. 发明授权

US07176489B2 Thin-film transistor and method of making same 无效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07176489B2
公开(公告)日：2007-02-13
申请号：US10872527
申请日：2004-06-22
申请人： Byung-Chul Ahn , Hyun-Sik Seo
发明人： Byung-Chul Ahn , Hyun-Sik Seo
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78636
摘要： A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.
摘要翻译：薄膜晶体管包括基板和包括具有设置在基板上的第一和第二金属层的双层结构的栅极，第一金属层比第二金属层宽1至4微米。制造这种薄膜晶体管的方法包括以下步骤：在衬底上沉积第一金属层，将第二金属层直接沉积在第一金属层上; 在所述第二金属层上形成具有指定宽度的光致抗蚀剂; 通过使用光致抗蚀剂作为掩模的各向同性蚀刻图案化第二金属层; 通过使用光致抗蚀剂作为掩模的各向异性蚀刻图案化第一金属层，第一金属层被蚀刻成具有指定的宽度，从而形成具有第一和第二金属层的层叠结构的栅极; 并去除光致抗蚀剂。

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