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81. 发明授权

US11479855B2 Spatial wafer processing with improved temperature uniformity 有权
公开(公告)号：US11479855B2
公开(公告)日：2022-10-25
申请号：US17002409
申请日：2020-08-25
申请人： Applied Materials, Inc.
发明人： Joseph AuBuchon , Sanjeev Baluja , Dhritiman Subha Kashyap , Jared Ahmad Lee , Tejas Ulavi , Michael Rice
IPC分类号： C23C16/455 , C23C16/458 , H01L21/67 , H01L21/687 , C23C16/46 , H01L21/02
摘要： Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

82. 发明授权

US11478589B2 Medical device assembly 有权
公开(公告)号：US11478589B2
公开(公告)日：2022-10-25
申请号：US16587673
申请日：2019-09-30
申请人： Becton, Dickinson and Company
发明人： Chee Leong Lum , Waheed Abid , Peter Douglas , Ivan Zivkovic
IPC分类号： A61M5/34 , A61M5/32 , A61M5/50
摘要： Medical device assemblies having a connection mechanism for securely connecting a hub to fluid storage containers in a luer slip relationship are described. An exemplary medical device includes a hub forming a cavity, a second indicating element disposed within the cavity that engages the hub. Additional features of the medical device include a second indicating element contoured to form a line contact with the hub. In a specific configuration, the hub includes a first indicating element attached to the hub and extending proximally into the cavity having a protrusion. In a more specific configuration, the medical device includes a fluid storage container that has an indication system for visually indicating optimal fluid-tight engagement of the hub and the fluid storage container.

83. 发明授权

US11478573B2 Catheter tubing with tailored modulus response 有权
公开(公告)号：US11478573B2
公开(公告)日：2022-10-25
申请号：US16788937
申请日：2020-02-12
申请人： Becton, Dickinson and Company
发明人： Lisa Lim , Theresa Hermel-Davidock , Marc W. Weimer , Jonathan Karl Burkholz
IPC分类号： A61L29/18 , A61M25/00 , A61L29/04 , A61L29/02 , C08G18/32 , A61L29/16 , A61L29/14 , A61L29/06 , C08G18/66 , C08G18/48 , C08L75/04 , C08G18/76
摘要： Catheter tubing comprises: an elongate body comprising a base thermoplastic polyurethane; and a compounded thermoplastic polyurethane co-extruded with the base thermoplastic polyurethane to provide a section of catheter tubing discrete from the elongate body, the compounded thermoplastic polyurethane comprising a thermoplastic polyurethane and a radiopaque material, wherein the catheter tubing comprises a first elastic modulus under first conditions prior to entry into a patient; and wherein when exposed to second conditions comprising two or more in vivo stimuli for a duration of time the catheter tubing comprises a second elastic modulus that is not more than fifty percent of the first modulus.

84. 发明授权

US11476097B2 Common electrostatic chuck for differing substrates 有权
公开(公告)号：US11476097B2
公开(公告)日：2022-10-18
申请号：US17012275
申请日：2020-09-04
申请人： Applied Materials, Inc.
发明人： Vinodh Ramachandran , Ananthkrishna Jupudi , Sarath Babu
IPC分类号： H01L21/683 , H01J37/32 , H02N13/00
摘要： An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

85. 发明授权

US11473189B2 Method for particle removal from wafers through plasma modification in pulsed PVD 有权
公开(公告)号：US11473189B2
公开(公告)日：2022-10-18
申请号：US16787569
申请日：2020-02-11
申请人： Applied Materials, Inc.
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
IPC分类号： C23C14/54 , H01J37/34 , C23C14/35 , C23C14/06
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

86. 发明授权

US11467499B2 System and method of measuring refractive index of EUV mask absorber 有权
$System and method of measuring refractive index of EUV mask absorber$
公开(公告)号：US11467499B2
公开(公告)日：2022-10-11
申请号：US16893538
申请日：2020-06-05
申请人： Applied Materials, Inc.
发明人： Wen Xiao , Vibhu Jindal , Huajun Liu , Herng Yau Yoong
IPC分类号： G01N21/41 , G03F7/20 , G03F1/22 , G03F1/54 , G03F1/26 , G01J1/42 , G01N21/33
摘要： Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.

87. 发明授权

US11459347B2 Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films 有权
公开(公告)号：US11459347B2
公开(公告)日：2022-10-04
申请号：US17146683
申请日：2021-01-12
申请人： Applied Materials, Inc. , National University of Singapore
发明人： Andrea Leoncini , Paul Mehlmann , Nemanja Dordevic , Han Vinh Huynh , Doreen Wei Ying Yong
IPC分类号： C07F11/00 , C23C16/455 , C23C16/18
摘要： Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

88. 发明授权

US11452256B2 Auto guide vehicle 有权
公开(公告)号：US11452256B2
公开(公告)日：2022-09-27
申请号：US16608559
申请日：2018-04-27
申请人： Meidensha Corporation
发明人： Yasuhiro Nishizawa , Toshiyuki Ueno , Yuya Matsushita
IPC分类号： B61D47/00 , A01D34/00 , B60P1/02 , F15B13/042
摘要： An auto guide vehicle (20) that conveys a cart (10), wherein the auto guide vehicle (20) is provided with: a fluid pressure cylinder (22) that is able to be extended and retracted vertically, and that applies an upward pressing force to the floor surface of the cart (10); a fluid pressure supply device (70) that supplies a fluid to the fluid pressure cylinder (22); pressure regulating means (50) that regulates the fluid pressure of the fluid supplied from the fluid pressure supply device (70) to the fluid pressure cylinder (22); a control board (40) that outputs a fluid pressure command value to the pressure regulating means (50); and a pressure sensor (100) that detects the fluid pressure of the fluid supplied to the fluid pressure cylinder (22); wherein the control board (40) computes derivatives of the fluid pressure detected by the pressure sensor (100), estimates a timing at which the cart begins to leave the ground based on a pattern of the computed derivatives, and computes the command value by multiplying a coefficient less than one by the fluid pressure detected by the pressure sensor (100) at the estimated timing.

89. 发明授权

US11450759B2 Gate all around I/O engineering 有权
公开(公告)号：US11450759B2
公开(公告)日：2022-09-20
申请号：US17037941
申请日：2020-09-30
申请人： Applied Materials, Inc.
发明人： Steven C. H. Hung , Benjamin Colombeau , Andy Lo , Byeong Chan Lee , Johanes F. Swenberg , Theresa Kramer Guarini , Malcolm J. Bevan
IPC分类号： H01L29/66 , H01L21/02 , H01L29/423 , C30B29/06 , C30B29/52 , C23C8/02 , C23C8/16 , C23C8/80 , C23C16/56 , C23C16/455
摘要： Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-κ layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-κ layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

90. 发明授权

US11434254B2 Dinuclear molybdenum precursors for deposition of molybdenum-containing films 有权
公开(公告)号：US11434254B2
公开(公告)日：2022-09-06
申请号：US17146666
申请日：2021-01-12
申请人： Applied Materials, Inc. , National University of Singapore
发明人： Andrea Leoncini , Paul Mehlmann , Nemanja Dordevic , Han Vinh Huynh , Doreen Wei Ying Yong
IPC分类号： C07F11/00 , C23C16/18 , C23C16/455
摘要： Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

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