会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 73. 发明授权
    • Optically controlled microwave switch and signal switching system
    • 光控微波开关和信号开关系统
    • US5214275A
    • 1993-05-25
    • US768836
    • 1991-09-30
    • James L. FreemanSankar Ray
    • James L. FreemanSankar Ray
    • H03K17/10H03K17/785
    • H03K17/102H03K17/785
    • Disclosed is an optically activated microwave switch (10) which includes a field-effect transistor (12) that is switched between conducting and nonconducting states by a photodiode (14) that is connected between the field-effect transistor gate and drain electrode and a photodiode (16) that is connected between the field-effect transistor gate and source electrode. The circuit is configured and arranged for switching unbiased sinusoidal microwave signals of a frequency as high as approximately 10 gigahertz. A cascade arrangement of switches (10) provides increased signal handling capability in situations in which a single switch cannot be employed. Monolithic integrated circuit realizations of both single stage and cascaded stage arrangements are disclosed in which the semiconductor substrate is GaAs, the field-effect transistors are metal-semiconductor field-effect transistors and the photodiodes are interdigitated metal-semiconductor-metal devices.
    • 公开了一种光学激活微波开关(10),其包括通过连接在场效应晶体管栅极和漏极之间的光电二极管(14)和光电二极管(12)之间在导通状态和非导通状态之间切换的场效应晶体管(12) (16),其连接在场效应晶体管栅极和源极之间。 该电路被配置和布置成用于切换高达约10千兆赫兹的无偏差的正弦微波信号。 开关(10)的级联布置在不能使用单个开关的情况下提供增加的信号处理能力。 公开了单级和级联级布置的单片集成电路实现,其中半导体衬底是GaAs,场效应晶体管是金属 - 半导体场效应晶体管,并且光电二极管是叉指金属 - 半导体 - 金属器件。
    • 77. 发明授权
    • Means for rapid charging and dynamic discharging of a capacitively
charged electrical device
    • 用于电容充电的电气装置的快速充电和动态放电的手段
    • US4912335A
    • 1990-03-27
    • US316485
    • 1989-02-28
    • Kenneth EhaltWilliam ShengRonald P. ColinoBernard L. Kravitz
    • Kenneth EhaltWilliam ShengRonald P. ColinoBernard L. Kravitz
    • H03K17/0412H03K17/785
    • H03K17/04123H03K17/785
    • A dynamic discharge circuit for a capacitively-charged electrical device includes, in one embodiment, a bipolar transistor placed in the discharge path, with the base of the transistor being connected so that conduction is held off by the voltage generated by an illuminated PV-diode. When the PV-diode is shut off, base-drive is immediately supplied through a base resistor in dynamic fashion by the very capacitive charge that is to be discharged. In another embodiment, the resistor is replaced with a diode-transistor combination, thus eliminating the delaying RC product inherent with the use of a resistor. In yet a further embodiment, an SCR placed in the discharge path is also dynamically driven. Discharge times on the order of about 5 microseconds are attained with the latter two embodiments and it is found that this discharge time is relatively constant regardless of the value of the capacitance to be discharged. Substantially improved charging time of the electrical device is provided in a circuit which includes a phototransistor which supplies charging current derived from the main power supply. The embodiments are described as being applied to the discharge of a capacitively-charged MOSFET in an optically-coupled solid state relay.
    • 用于电容充电的电气装置的动态放电电路在一个实施例中包括放置在放电路径中的双极晶体管,晶体管的基极被连接,使得导通被被照明的光伏二极管产生的电压 。 当PV二极管关断时,通过基本电阻立即通过要放电的电容性电荷以动态方式提供基极驱动。 在另一个实施例中,电阻器被替换为二极管 - 晶体管组合,从而消除了使用电阻器固有的延迟RC产品。 在又一实施例中,放置在放电路径中的SCR也是动态驱动的。 后两个实施例可获得大约5微秒量级的放电时间,并且发现该放电时间与放电电容的值无关。 在包括提供从主电源得到的充电电流的光电晶体管的电路中提供电气装置的大大改善的充电时间。 这些实施例被描述为适用于光耦合固态继电器中的电容充电MOSFET的放电。