专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120255606A1 ANTI-REFLECTIVE COATING WITH HIGH OPTICAL ABSORPTION LAYER FOR BACKSIDE CONTACT SOLAR CELLS 有权
标题翻译：用于背光接触太阳能电池的高光吸收层防反射涂层
公开(公告)号：US20120255606A1
公开(公告)日：2012-10-11
申请号：US13470576
申请日：2012-05-14
申请人： Hsin-Chiao LUAN , Denis DE CEUSTER
发明人： Hsin-Chiao LUAN , Denis DE CEUSTER
IPC分类号： H01L31/0376 , H01L31/20
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
摘要翻译：一种用于背面接触太阳能电池的多层抗反射结构。防反射结构可以形成在背面接触太阳能电池的前侧。防反射结构可以包括钝化水平，钝化层上的高光吸收层以及高光吸收层上的低光吸收层。钝化水平可以包括在太阳能电池基板的纹理表面上热生长的二氧化硅，其可以是N型硅衬底。高光吸收层可以被配置为阻挡进入衬底的UV辐射的至少10％。高光吸收层可以包括高k氮化硅，低光吸收层可以包括低k氮化硅。

72. 发明授权

US08263193B2 Vacuum treatment method 失效
标题翻译：真空处理方法
公开(公告)号：US08263193B2
公开(公告)日：2012-09-11
申请号：US12311184
申请日：2008-01-30
申请人： Hiroomi Miyahara , Tatsuyuki Nishimiya
发明人： Hiroomi Miyahara , Tatsuyuki Nishimiya
IPC分类号： C23C16/00 , C23C16/50
CPC分类号： H01L31/182 , C23C16/24 , C23C16/4557 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/2001 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH2/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30° C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.
摘要翻译：提供一种真空处理方法和真空处理装置，其中即使沉积速率增加，SiH 2 / SiH比也不增加，从而防止膜质量的劣化并且可以实现高水平的生产率。一种真空处理方法，其特征在于，包括以下步骤：使用散热器（加热装置）（5）在减压气氛下加热配置在沉积室（6）内部的基板（8），并将电力供给到放电电极），设置在与基板（8）相对的位置，从而在基板（8）上进行沉积，其中在基板（8）和放电电极（3）之间的温度差不是的情况下进行沉积大于30℃。沉积也可以在衬底（8）和放电电极（3）之间的间隙设定为不大于7.5mm的情况下进行。

73. 发明授权

US08242354B2 Backside contact solar cell with formed polysilicon doped regions 有权
标题翻译：背面接触太阳能电池，形成多晶硅掺杂区域
公开(公告)号：US08242354B2
公开(公告)日：2012-08-14
申请号：US12626483
申请日：2009-11-25
申请人： David D. Smith
发明人： David D. Smith
IPC分类号： H01L31/00
CPC分类号： H01L31/182 , H01L31/02363 , H01L31/0682 , H01L31/1872 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
摘要翻译：太阳能电池包括在多晶硅层的邻接部分中邻接的P型和N型掺杂区域。多晶硅层可以形成在形成在太阳能电池基板（例如，硅晶片）的背面上的薄介电层上。多晶硅层具有相对大的平均晶粒尺寸以减少或消除P型和N型掺杂区域之间的空间电荷区域中的复合，从而提高效率。

74. 发明授权

US08198528B2 Anti-reflective coating with high optical absorption layer for backside contact solar cells 有权
标题翻译：用于背面接触太阳能电池的具有高光吸收层的抗反射涂层
公开(公告)号：US08198528B2
公开(公告)日：2012-06-12
申请号：US12325878
申请日：2008-12-01
申请人： Hsin-Chiao Luan , Denis De Ceuster
发明人： Hsin-Chiao Luan , Denis De Ceuster
IPC分类号： H01L31/00
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
摘要翻译：一种用于背面接触太阳能电池的多层抗反射结构。防反射结构可以形成在背面接触太阳能电池的前侧。防反射结构可以包括钝化水平，钝化层上的高光吸收层以及高光吸收层上的低光吸收层。钝化水平可以包括在太阳能电池基板的纹理化表面上热生长的二氧化硅，其可以是N型硅衬底。高光吸收层可以被配置为阻挡进入衬底的UV辐射的至少10％。高光吸收层可以包括高k氮化硅，低光吸收层可以包括低k氮化硅。

75. 发明申请

US20120103417A1 SOLAR CELL WITH GRADED BANDGAP 审中-公开
标题翻译：具有分级带的太阳能电池
公开(公告)号：US20120103417A1
公开(公告)日：2012-05-03
申请号：US12915065
申请日：2010-10-29
申请人： Kuang-Chen YEH , Chu-Wan HUANG , Jr-Hong CHEN
发明人： Kuang-Chen YEH , Chu-Wan HUANG , Jr-Hong CHEN
IPC分类号： H01L31/0264 , H01L31/02
CPC分类号： H01L31/065 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A solar cell with graded bandgap is provided to increase the efficiencies of using the solar energy by a solar cell. The solar cell with graded bandgap above sequentially comprises a transparent conductive layer, a polysilicon layer, and conductive layer on a substrate. The polysilicon layer has a gradually increased bandgap from a first interface contacting the transparent conductive layer to the second interface contacting the conductive layer.
摘要翻译：提供了具有分级带隙的太阳能电池，以提高太阳能电池使用太阳能的效率。具有分级带隙的太阳能电池依次包括在基板上的透明导电层，多晶硅层和导电层。多晶硅层具有从接触透明导电层的第一界面到与导电层接触的第二界面逐渐增加的带隙。

76. 发明授权

US08168465B2 Three-dimensional semiconductor template for making high efficiency thin-film solar cells 有权
标题翻译：制造高效薄膜太阳能电池的三维半导体模板
公开(公告)号：US08168465B2
公开(公告)日：2012-05-01
申请号：US12618649
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/18
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
摘要翻译：具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111）硅模板的晶体平面。

77. 发明申请

US20120100058A1 PROCESS FOR PRODUCING SILICON, SILICON, AND PANEL FOR SOLAR CELLS 有权
标题翻译：用于生产太阳能电池的硅，硅和面板的方法
公开(公告)号：US20120100058A1
公开(公告)日：2012-04-26
申请号：US13342524
申请日：2012-01-03
申请人： Yoji ARITA , Takashi YONEDA
发明人： Yoji ARITA , Takashi YONEDA
IPC分类号： C01B33/02 , C03B5/225 , C03B5/193 , C01B33/037 , C03B5/18 , C03B5/187 , C03B5/237 , C03B5/173 , C03B5/185
CPC分类号： C01B33/037 , C01B33/02 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A process for producing silicon which comprises: bringing molten silicon containing an impurity into contact with molten salt in a vessel to react the impurity contained in the molten silicon with the molten salt; removing the impurity from the system.
摘要翻译：一种生产硅的方法，包括：使含有杂质的熔融硅与容器中的熔融盐接触，使熔融硅中所含的杂质与熔融盐反应; 从系统中去除杂质。

78. 发明授权

US08148192B2 Transparent solar cell method of fabrication via float glass process 有权
标题翻译：透明太阳能电池通过浮法玻璃制造方法
公开(公告)号：US08148192B2
公开(公告)日：2012-04-03
申请号：US12709513
申请日：2010-02-22
申请人： James P Campbell , Harry R Campbell , Ann B Campbell , Joel F Farber
发明人： James P Campbell , Harry R Campbell , Ann B Campbell , Joel F Farber
IPC分类号： H01L21/00
CPC分类号： H01L31/03921 , H01L31/068 , H01L31/182 , H01L31/1864 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/92
摘要： The present invention provides improved devices such as transparent solar cells. This patent teaches a particularly efficient method of device manufacture based on incorporating the solar cell fabrication into the widely used, high temperature, Float Glass manufacture process.
摘要翻译：本发明提供了诸如透明太阳能电池的改进的装置。该专利教导了基于将太阳能电池制造结合到广泛使用的高温浮法玻璃制造工艺中的特别有效的器件制造方法。

79. 发明申请

US20120027996A1 MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM 审中-公开
标题翻译：模具形状优化硅膜厚度均匀性
公开(公告)号：US20120027996A1
公开(公告)日：2012-02-02
申请号：US12844305
申请日：2010-07-27
申请人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
发明人： Glen Bennett Cook , Prantik Mazumder , Balram Suman
IPC分类号： B29C41/14
CPC分类号： H01L31/182 , C30B15/007 , C30B15/06 , C30B29/06 , Y02E10/546 , Y02P70/521 , Y10T428/24479
摘要： A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.
摘要翻译：制造半导体材料的固体层的方法包括选择具有前缘厚度和不同后缘厚度的模具，使得在固体层厚度相对于有效浸入时间的各个图中，将浸入前缘和后缘的熔融半导体与前缘和后缘相邻的固体层的厚度基本相等。模具浸入熔融半导体材料中并从熔融半导体材料中取出，以在模具的外表面上形成半导体材料的固体层。

80. 发明授权

US08092594B2 Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type 失效
标题翻译：用半导体材料制成的薄层覆盖的碳带和沉积这种层的方法
公开(公告)号：US08092594B2
公开(公告)日：2012-01-10
申请号：US11920018
申请日：2006-06-07
申请人： Christian Belouet
发明人： Christian Belouet
IPC分类号： C30B28/10 , C30B15/34
CPC分类号： H01L29/0657 , C30B15/007 , C30B28/10 , C30B29/06 , H01L21/02376 , H01L21/02532 , H01L21/02538 , H01L21/02625 , H01L29/20 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a carbon ribbon for covering in a thin layer of semiconductor material, and to a method of deposited such a layer on a substrate constituted by a carbon ribbon. At least one of the two faces of the carbon ribbon is for covering in a layer of semiconductor material by causing the ribbon to pass substantially vertically upwards through a bath of molten semiconductor material. According to the invention, the two edges of at least one of the two faces of the carbon ribbon project so as to form respective rims.
摘要翻译：本发明涉及一种用于覆盖半导体材料的薄层的碳带，以及在由碳带构成的基板上沉积这样的层的方法。碳带的两个面中的至少一个表面用于通过使色带基本上垂直向上通过熔融半导体材料浴而覆盖在半导体材料层中。根据本发明，碳带的两个表面中的至少一个的两个边缘突出以形成相应的边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式