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1. 发明授权

US08748736B2 Anti-reflective coating with high optical absorption layer for backside contact solar cells 有权
标题翻译：用于背面接触太阳能电池的具有高光吸收层的抗反射涂层
公开(公告)号：US08748736B2
公开(公告)日：2014-06-10
申请号：US13470576
申请日：2012-05-14
申请人： Hsin-Chiao Luan , Denis De Ceuster
发明人： Hsin-Chiao Luan , Denis De Ceuster
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
摘要翻译：一种用于背面接触太阳能电池的多层抗反射结构。防反射结构可以形成在背面接触太阳能电池的前侧。防反射结构可以包括钝化水平，钝化层上的高光吸收层以及高光吸收层上的低光吸收层。钝化水平可以包括在太阳能电池基板的纹理表面上热生长的二氧化硅，其可以是N型硅衬底。高光吸收层可以被配置为阻挡进入衬底的UV辐射的至少10％。高光吸收层可以包括高k氮化硅，低光吸收层可以包括低k氮化硅。

2. 发明申请

US20090151784A1 Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells 有权
标题翻译：用于背面接触式太阳能电池的高吸收层的抗反射涂层
公开(公告)号：US20090151784A1
公开(公告)日：2009-06-18
申请号：US12325878
申请日：2008-12-01
申请人： Hsin-Chiao LUAN , Denis De Ceuster
发明人： Hsin-Chiao LUAN , Denis De Ceuster
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
摘要翻译：一种用于背面接触太阳能电池的多层抗反射结构。防反射结构可以形成在背面接触太阳能电池的前侧。防反射结构可以包括钝化水平，钝化层上的高光吸收层以及高光吸收层上的低光吸收层。钝化水平可以包括在太阳能电池基板的纹理化表面上热生长的二氧化硅，其可以是N型硅衬底。高光吸收层可以被配置为阻挡进入衬底的UV辐射的至少10％。高光吸收层可以包括高k氮化硅，低光吸收层可以包括低k氮化硅。

3. 发明授权

US08198528B2 Anti-reflective coating with high optical absorption layer for backside contact solar cells 有权
标题翻译：用于背面接触太阳能电池的具有高光吸收层的抗反射涂层
公开(公告)号：US08198528B2
公开(公告)日：2012-06-12
申请号：US12325878
申请日：2008-12-01
申请人： Hsin-Chiao Luan , Denis De Ceuster
发明人： Hsin-Chiao Luan , Denis De Ceuster
IPC分类号： H01L31/00
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.
摘要翻译：一种用于背面接触太阳能电池的多层抗反射结构。防反射结构可以形成在背面接触太阳能电池的前侧。防反射结构可以包括钝化水平，钝化层上的高光吸收层以及高光吸收层上的低光吸收层。钝化水平可以包括在太阳能电池基板的纹理化表面上热生长的二氧化硅，其可以是N型硅衬底。高光吸收层可以被配置为阻挡进入衬底的UV辐射的至少10％。高光吸收层可以包括高k氮化硅，低光吸收层可以包括低k氮化硅。

4. 发明授权

US08008575B2 Solar cell with reduced base diffusion area 有权
标题翻译：具有减小的基底扩散面积的太阳能电池
公开(公告)号：US08008575B2
公开(公告)日：2011-08-30
申请号：US11492282
申请日：2006-07-24
申请人： Denis De Ceuster , Peter John Cousins
发明人： Denis De Ceuster , Peter John Cousins
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/022441 , H01L31/061 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.
摘要翻译：在一个实施例中，太阳能电池在背面形成有基极和发射极扩散区。发射极扩散区被配置为收集太阳能电池中的少数电荷载流子，而基极扩散区被配置为收集多数电荷载流子。发射极扩散区域可以是分离基极扩散区域的连续区域。每个基极扩散区可以具有减小的面积以减少少数电荷载流子复合损耗，而不会由于多数电荷载流子的横向流动而基本上增加串联电阻损耗。例如，每个基底扩散区域可以具有点状。

5. 发明申请

US20090260673A1 Preventing Harmful Polarization Of Solar Cells 有权
标题翻译：防止太阳能电池有害极化
公开(公告)号：US20090260673A1
公开(公告)日：2009-10-22
申请号：US12477796
申请日：2009-06-03
申请人： Richard M. Swanson , Denis De Ceuster , Vikas Desai , Douglas H. Rose , David D. Smith , Neil Kaminar
发明人： Richard M. Swanson , Denis De Ceuster , Vikas Desai , Douglas H. Rose , David D. Smith , Neil Kaminar
IPC分类号： H01L31/042
CPC分类号： H02S40/32 , H01L31/02167 , H01L31/02168 , H01L31/022466 , H01L31/048 , H01L31/049 , H01L31/0504 , H01L31/0516 , H01L31/18 , H02J3/383 , H02J3/46 , H02S30/10 , H02S40/36 , Y02B10/12 , Y02B10/14 , Y02E10/52 , Y02E10/547 , Y10T29/49117
摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.
摘要翻译：在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

6. 发明授权

US07804022B2 Solar cell contact fingers and solder pad arrangement for enhanced efficiency 有权
标题翻译：太阳能电池接触指和焊盘布置，以提高效率
公开(公告)号：US07804022B2
公开(公告)日：2010-09-28
申请号：US11725023
申请日：2007-03-16
申请人： Denis De Ceuster
发明人： Denis De Ceuster
IPC分类号： H01L51/00
CPC分类号： H01L31/022433 , H01L31/18 , Y02E10/50
摘要： A solar cell includes negative metal contact fingers electrically connected to N-type diffusion regions of the solar cell and positive metal contact fingers electrically connected to P-type diffusion regions of the solar cell. Both the N-type and P-type diffusion regions are on the backside of the solar cell. The solar cell includes a front side that faces the sun during normal operation. The negative and positive metal contact fingers may be interdigitated. For increased solar radiation collection, the metal contact fingers may be arranged to point to and collectively cover portions of a perimeter of a solder pad. For example, the negative metal contact fingers may be arranged to point to and collectively cover two or three sides of a solder pad.
摘要翻译：太阳能电池包括电连接到太阳能电池的N型扩散区的负极金属接触指和与太阳能电池的P型扩散区电连接的正金属接触指。 N型和P型扩散区都在太阳能电池的背面。太阳能电池包括在正常操作期间面向太阳的前侧。负极和正极金属接触指可以互相指向。为了增加太阳辐射收集，金属接触指可以被布置成指向并且一起覆盖焊盘周边的部分。例如，负金属接触指可以被布置成指向并且共同地覆盖焊盘的两侧或三侧。

7. 发明申请

US20070151598A1 Back side contact solar cell structures and fabrication processes 有权
标题翻译：背面接触太阳能电池结构和制造工艺
公开(公告)号：US20070151598A1
公开(公告)日：2007-07-05
申请号：US11643743
申请日：2006-12-20
申请人： Denis De Ceuster , Peter Cousins , Richard Swanson , Jane Manning
发明人： Denis De Ceuster , Peter Cousins , Richard Swanson , Jane Manning
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L31/022433 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.
摘要翻译：在一个实施例中，太阳能电池的有源扩散接合通过从掺杂源选择性地沉积在晶片的背面上的掺杂剂扩散而形成。可以使用例如印刷方法选择性地沉积掺杂剂源。可以使用多种掺杂剂源来形成具有不同掺杂浓度的有源扩散区域。例如，可以制造三个或四个有源扩散区以优化太阳能电池的硅/电介质，硅/金属或两个界面。在使用使晶片材料的去除最小化的纹理化工艺形成掺杂剂源之前，可以对晶片的前侧进行纹理化。允许金属网格线连接到有源扩散结的开口可以使用自对准的接触开口蚀刻工艺形成，以最小化未对准的影响。

8. 发明申请

US20120186649A1 SELECTIVE TRANSFORMATION IN FUNCTIONAL FILMS, AND SOLAR CELL APPLICATIONS THEREOF 有权
标题翻译：功能膜中的选择性转化及其太阳能电池应用
公开(公告)号：US20120186649A1
公开(公告)日：2012-07-26
申请号：US13496555
申请日：2010-09-17
申请人： Adrian Bruce Turner , Oliver Schultz-Wuttnann , Denis De Ceuster , Douglas E. Crafts
发明人： Adrian Bruce Turner , Oliver Schultz-Wuttnann , Denis De Ceuster , Douglas E. Crafts
IPC分类号： H01L31/18 , H01L31/0216
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/1864 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.
摘要翻译：一种在掺杂半导体的表面上具有第一膜和阻挡膜的太阳能电池形成方法和所得到的结构，其中第一膜的光学和/或电学性质原位转化，使得得到的转化膜为更适合太阳能电池的高效运行; 其中所述阻挡膜的部分部分地覆盖所述第一膜并且基本上防止所述阻挡膜的所述部分下方的第一膜区域的转变。

9. 发明授权

US07820475B2 Back side contact solar cell structures and fabrication processes 有权
标题翻译：背面接触太阳能电池结构和制造工艺
公开(公告)号：US07820475B2
公开(公告)日：2010-10-26
申请号：US11643743
申请日：2006-12-20
申请人： Denis De Ceuster , Peter John Cousins , Richard M. Swanson , Jane E. Manning
发明人： Denis De Ceuster , Peter John Cousins , Richard M. Swanson , Jane E. Manning
IPC分类号： H01L21/225 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/022433 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.
摘要翻译：在一个实施例中，太阳能电池的有源扩散接合通过从掺杂源选择性地沉积在晶片的背面上的掺杂剂扩散而形成。可以使用例如印刷方法选择性地沉积掺杂剂源。可以使用多种掺杂剂源来形成具有不同掺杂浓度的有源扩散区域。例如，可以制造三个或四个有源扩散区以优化太阳能电池的硅/电介质，硅/金属或两个界面。在使用使晶片材料的去除最小化的纹理化工艺形成掺杂剂源之前，可以对晶片的前侧进行纹理化。允许金属网格线连接到有源扩散结的开口可以使用自对准的接触开口蚀刻工艺形成，以最小化未对准的影响。

10. 发明申请

US20060196535A1 Preventing harmful polarization of solar cells 有权
公开(公告)号：US20060196535A1
公开(公告)日：2006-09-07
申请号：US11210213
申请日：2005-08-22
申请人： Richard Swanson , Denis De Ceuster , Vikas Desai , Douglas Rose , David Smith , Neil Kaminar
发明人： Richard Swanson , Denis De Ceuster , Vikas Desai , Douglas Rose , David Smith , Neil Kaminar
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H02S40/32 , H01L31/02167 , H01L31/02168 , H01L31/022466 , H01L31/048 , H01L31/049 , H01L31/0504 , H01L31/0516 , H01L31/18 , H02J3/383 , H02J3/46 , H02S30/10 , H02S40/36 , Y02B10/12 , Y02B10/14 , Y02E10/52 , Y02E10/547 , Y10T29/49117
摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

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