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71. 发明申请

US20030234402A1 Transparent layer of a LED device and the method for growing the same 失效
标题翻译： LED装置的透明层及其生长方法
公开(公告)号：US20030234402A1
公开(公告)日：2003-12-25
申请号：US10178366
申请日：2002-06-25
发明人： Liann-Be Chang , Li-Hsin Kuo , Li-Zen Hsieh , Li-Yuan Chang
IPC分类号： H01L027/15 , H01L031/12 , H01L033/00
CPC分类号： C30B19/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L33/0062
摘要： A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.
摘要翻译：在本发明中公开了LED器件的透明层及其生长方法。本发明提供用于生长LED装置的透明层的改进的液相外延（LPE）工艺。在上述LPE方法中，改进的过饱和溶液用于克服现有技术中的缺点，其中过饱和溶液包含锑和/或铟作为溶剂。此外，将金属锌和/或镁掺杂剂加入到过饱和溶液中以优化透明层的特性。因此，本发明可以提供用于生长LED装置的透明层的更有效的方法，从而可以提高上述透明层的质量。

72. 发明授权

US06641938B2 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> 有权
标题翻译：在底物上生长的碳化硅外延层朝向<1100>切割
公开(公告)号：US06641938B2
公开(公告)日：2003-11-04
申请号：US10001476
申请日：2001-11-01
申请人： Barbara E. Landini , George R. Brandes , Michael A. Tischler
发明人： Barbara E. Landini , George R. Brandes , Michael A. Tischler
IPC分类号： B32B1800
CPC分类号： H01L29/1608 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02587 , H01L21/0262 , H01L29/045 , Y10T428/24777 , Y10T428/30
摘要： A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
摘要翻译：在六边形晶体形式的SiC晶体衬底的切割表面上生长的碳化硅外延膜，其具有约6至约10度的切割角朝向<1（衬底的超晶核（100>晶体方向）。所得的碳化硅外延膜具有优异的形态和材料性能。

73. 发明申请

US20030047795A1 Compound semiconductor device, production method thereof, light-emitting device and transistor 失效
标题翻译：化合物半导体器件及其制造方法，发光元件及晶体管
公开(公告)号：US20030047795A1
公开(公告)日：2003-03-13
申请号：US10237732
申请日：2002-09-10
申请人： SHOWA DENKO K.K.
发明人： Takashi Udagawa
IPC分类号： H01L029/04
CPC分类号： H01L33/30 , H01L21/02381 , H01L21/02433 , H01L21/02461 , H01L21/0254 , H01L21/02543 , H01L21/02579 , H01L21/02581 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/20 , H01L29/2003 , H01L29/7371 , H01L29/812 , H01L29/861 , H01L33/0066 , H01L33/16
摘要： A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a null111null crystal plane inclined at an angle of 5.0null to 9.0null toward a crystal azimuth.
摘要翻译：公开了一种具有硅单晶衬底和在硅单晶衬底表面上含有硼和磷作为构成元素的磷化硼半导体层的半导体器件。硅单晶衬底的表面是朝向<110>晶体方位角以5.0°至9.0°的角度倾斜的{111}晶面。

74. 发明申请

US20030042479A1 Optical semiconductor devices and fabrication method 有权
标题翻译：光半导体器件及制造方法
公开(公告)号：US20030042479A1
公开(公告)日：2003-03-06
申请号：US10173753
申请日：2002-06-19
发明人： Tomonobu Tsuchiya
IPC分类号： H01L029/06 , H01L031/0328 , H01L031/0336 , H01L031/00
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02581 , H01S5/2223 , H01S5/2226 , H01S5/2231 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3086 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/34366
摘要： A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.
摘要翻译：通过使用使用InGaAlAs四元合金的Zn的使用金属有机气相外延的Zn浓度的增加和Zn扩散的减少之间的平衡，具有几nm的陡的Zn分布的调制掺杂多量子阱结构，以及 Zn浓度和晶体组成的范围被定义为等于或小于在每个InGaAlAs组合物中Zn扩散的临界浓度。

75. 发明申请

US20010055660A1 Bulk single crystal gallium nitride and method of making same 失效
标题翻译：散装单晶氮化镓及其制造方法
公开(公告)号：US20010055660A1
公开(公告)日：2001-12-27
申请号：US09933943
申请日：2001-08-21
发明人： Michael A. Tischler , Thomas F. Kuech , Robert P. Vaudo
IPC分类号： B32B003/00
CPC分类号： C30B33/00 , B82Y15/00 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02439 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/02529 , H01L21/0254 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/915 , Y10T428/13 , Y10T428/21
摘要： A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.
摘要翻译：一种单晶M * N制品，其可以通过包括以下步骤的方法制备：提供具有与M * N外延相容的结晶表面的材料的基材; 在衬底的表面上沉积单晶M * N层; 并从单晶M * N层除去衬底，例如用施加到衬底去除其的蚀刻剂，得到作为单晶M * N制品的单晶M * N层。本体单晶M * N制品适用于在其上制造微电子结构的基底，以产生包含本体单晶M * N基底或其前体结构的微电子器件。

76. 发明申请

US20010008656A1 BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME 无效
标题翻译：大块单晶氮化镓及其制造方法
公开(公告)号：US20010008656A1
公开(公告)日：2001-07-19
申请号：US08955168
申请日：1997-10-21
发明人： MICHAEL A. TISCHLER , THOMAS F. KUECH , ROBERT P. VAUDO
IPC分类号： B32B001/08
CPC分类号： C30B33/00 , B82Y15/00 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02439 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/02529 , H01L21/0254 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/915 , Y10T428/13 , Y10T428/21
摘要： A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.
摘要翻译：一种单晶M * N制品，其可以通过包括以下步骤的方法制备：提供具有与M * N外延相容的结晶表面的材料的基材; 在衬底的表面上沉积单晶M * N层; 并从单晶M * N层除去衬底，例如用施加到衬底去除其的蚀刻剂，得到作为单晶M * N制品的单晶M * N层。本体单晶M * N制品适用于在其上制造微电子结构的基底，以产生包含本体单晶M * N基底或其前体结构的微电子器件。

77. 发明授权

US06218702B1 Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method 有权
标题翻译：微晶硅薄膜及其制造方法，光电转换装置及其制造方法
公开(公告)号：US06218702B1
公开(公告)日：2001-04-17
申请号：US09144584
申请日：1998-08-31
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L2900
CPC分类号： H01L21/02422 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A microcrystal silicon film is formed on a substrate by using a silicide gas, a hydrogen gas, and a source gas that enables introduction of a metal element for accelerating crystallization of silicon in a capacitance-coupling plasma CVD apparatus. The action of the metal element provides a high film forming rate. Therefore, a technique for forming a microcrystal silicon film with high quality and high film forming rate can be provided.
摘要翻译：通过使用能够在电容耦合等离子体CVD装置中引入用于促进硅的结晶化的金属元素的硅化物气体，氢气和源气体，在基板上形成微晶硅膜。金属元素的作用提供了高的成膜速率。因此，可以提供用于形成具有高质量和高成膜速率的微晶硅膜的技术。

78. 发明授权

US5994642A Method for preparing CdTe film and solar cell using the same 失效
标题翻译：使用该CdTe薄膜和太阳能电池的方法
公开(公告)号：US5994642A
公开(公告)日：1999-11-30
申请号：US89
申请日：1998-03-13
申请人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
发明人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
IPC分类号： C23C14/06 , H01L21/363 , H01L27/142 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译： PCT No.PCT / JP97 / 01791 Sec。 371日期1998年3月13日 102（e）1998年3月13日PCT PCT 1997年5月27日PCT公布。公开号WO97 / 45880 PCT 日期1997年12月4日公开了通过改进的紧密间隔升华法形成质量好的CdTe膜的方法。该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及在基板上形成CdTe膜的步骤，通过加热涂膜和基板，并使涂膜中的半导体材料蒸发。

79. 发明授权

US5534079A Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition 失效
标题翻译：通过化学气相沉积形成的过饱和稀土掺杂半导体层
公开(公告)号：US5534079A
公开(公告)日：1996-07-09
申请号：US207942
申请日：1994-03-09
申请人： David B. Beach
发明人： David B. Beach
IPC分类号： C30B25/14 , H01L21/02 , H01L21/205 , H01L21/223 , H01L31/0288 , C09K11/77
CPC分类号： H01L31/0288 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/0262 , Y02E10/50 , Y10S252/951 , Y10S438/918
摘要： A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.
摘要翻译：公开了一种用于在衬底上制造稀土掺杂的外延半导体层的CVD工艺。该方法在气相中使用硅烷或锗烷和稀土化合物。通过这种方法，制备了在稀土中过饱和的单相稀土掺杂半导体层。优选的稀土是铒，通过CVD沉积铒的优选前体是六氟乙酰丙酮酸铒，乙酰丙酮化物，四甲基庚二酮酸酯和氟草辛酸酯。该工艺可用于制造包括硅衬底和掺铒外延硅膜的光电器件。

80. 发明授权

US5264397A Method for activating zinc in semiconductor devices 失效
标题翻译：在半导体器件中激活锌的方法
公开(公告)号：US5264397A
公开(公告)日：1993-11-23
申请号：US656908
申请日：1991-02-15
申请人： Shwu L. Lin , John D. Kulick , Randall B. Wilson
发明人： Shwu L. Lin , John D. Kulick , Randall B. Wilson
IPC分类号： H01L21/208 , H01L21/324 , H01L33/00 , H01L33/30 , H01S5/30 , H01S5/323 , H01L21/20
CPC分类号： H01L33/305 , H01L21/02543 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/3245 , H01L33/0062 , H01S5/305 , H01S5/3054 , H01S5/32391
摘要： A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625.degree. C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625.degree. C. for at least about 190 seconds.
摘要翻译：用于激活III / V族半导体器件的有源层中的锌掺杂剂的方法包括形成锌掺杂的III族/第IV族材料层，然后在预定温度下将该层退火至足以使将层中的无定形锌转化为受体锌。在本发明的优选实施方案中，在InP-InGaAsP双异质结构的有源层中激活锌掺杂剂的方法包括在约625℃的温度下将活性层退火至少约190秒，其将非活性锌转化为受体锌，而不会显着降低活性层中的总锌。在另一个优选实施例中，用于增加InP-InGaAsP光电子半导体器件（例如激光器或具有锌掺杂有源层的LED）的功率输出的方法包括在约625℃的温度下退火半导体器件的有源层 C.至少约190秒。

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