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71. 发明授权

US08053700B2 Applicators and cooling systems for a plasma device 有权
标题翻译：用于等离子体装置的涂布机和冷却系统
公开(公告)号：US08053700B2
公开(公告)日：2011-11-08
申请号：US11541388
申请日：2006-09-29
申请人： Jack J. Schuss , Xing Chen
发明人： Jack J. Schuss , Xing Chen
IPC分类号： B23K10/00
CPC分类号： H01J37/32522 , H01J37/32357
摘要： An improved plasma vessel (i.e., plasma applicator) that provides effective cooling includes a plurality of generally linear tubes having a dielectric interior fluidly connected together by dielectric connectors. The tubes and connectors are joined together to form a leak-tight plasma vessel. A cooling system surrounding the improved plasma vessel includes a rigid cooling plate and a deformable thermal transfer material disposed between the plasma vessel and the cooling plate. After use or at an operator's discretion, the plasma vessel can be removed from the cooling system and a new vessel may be inserted in its place. Alternatively, the used vessel may be refurbished and re-inserted into the cooling system. The new or refurbished vessel may or may not be of the same size or configuration as the used vessel. Thermal contact between the cooling system and the new or refurbished vessel, however is maintained through the deformable thermal transfer material.
摘要翻译：提供有效冷却的改进的等离子体容器（即，等离子体施加器）包括多个大致直线的管，其具有通过电介质连接器流体连接在一起的电介质内部。管和连接器连接在一起以形成不透漏等离子体容器。围绕改进的等离子体容器的冷却系统包括刚性冷却板和设置在等离子体容器和冷却板之间的可变形的热转印材料。使用后或由操作人员决定，等离子体容器可从冷却系统中取出，新的容器可插入其中。或者，所用的容器可以被翻新并重新插入到冷却系统中。新的或翻新的船舶可能与或不同于使用的船只的尺寸或构造。然而，冷却系统和新的或翻新的容器之间的热接触通过可变形的热转印材料保持。

72. 发明授权

US07969096B2 Inductively-coupled plasma source 有权
标题翻译：感应耦合等离子体源
公开(公告)号：US07969096B2
公开(公告)日：2011-06-28
申请号：US11639680
申请日：2006-12-15
申请人： Xing Chen
发明人： Xing Chen
IPC分类号： H05B31/26
CPC分类号： H05H1/46 , C03B19/143 , C03B37/0183 , C03B37/01861 , H01J37/321 , H01J37/32522 , H01J37/3266 , H05H2001/4652
摘要： A method and apparatus for exciting gas that involves generating an alternating magnetic field unidirectionally through a magnetic core defining a gap, across the gap and through a plasma vessel that includes dielectric material. The magnetic field induces an electric field in the plasma vessel that generates the plasma.
摘要翻译：一种用于激发气体的方法和装置，其涉及通过限定间隙的磁芯单向产生交变磁场，跨越间隙并通过包括电介质材料的等离子体容器。磁场在等离子体容器中产生产生等离子体的电场。

73. 发明申请

US20110121058A1 MICROWAVE PLASMA PROCESSING APPARATUS AND METHOD FOR PRODUCING COOLING JACKET 有权
标题翻译：微波等离子体处理装置及其制造方法
公开(公告)号：US20110121058A1
公开(公告)日：2011-05-26
申请号：US13054014
申请日：2009-06-24
申请人： Shinya Nishimoto
发明人： Shinya Nishimoto
IPC分类号： B23K31/02 , C23F1/08 , B32B37/02 , B32B37/06 , B32B37/14 , B23K20/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32522
摘要： A microwave plasma processing apparatus has a microwave antenna in which a wavelength-shortening plate and a cooling portion of a cooling jacket are arranged adjacent to each other
摘要翻译：微波等离子体处理装置具有微波天线，其中波长缩短板和冷却套的冷却部分彼此相邻布置

74. 发明授权

US07913752B2 Cooling device for vacuum treatment device 有权
标题翻译：真空处理装置冷却装置
公开(公告)号：US07913752B2
公开(公告)日：2011-03-29
申请号：US10546045
申请日：2004-01-20
申请人： Masashi Ueda , Yoshimi Watabe , Shusaku Yamasaki , Kazuo Miyoshi , Hiroyuki Otsuka
发明人： Masashi Ueda , Yoshimi Watabe , Shusaku Yamasaki , Kazuo Miyoshi , Hiroyuki Otsuka
IPC分类号： F25B29/00 , H01J37/32 , H01L21/00
CPC分类号： F28D15/0266 , H01J37/32522 , H01J2237/002 , H01J2237/2001 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/6833
摘要： A cooling system for a vacuum processing apparatus is provided with an internal heat conduction path for transfer of heat entering the subject body through the vacuum processing apparatus, a heat radiation path for radiation of the heat to an outside of the vacuum processing apparatus and a heat conduction path for regulation of quantity of heat transfer between the internal heat conduction path and the heat radiation path. Preferably, a heat pipe is applied to the internal heat conduction path.
摘要翻译：用于真空处理装置的冷却系统设有内部热传导路径，用于通过真空处理装置传送进入被检体的热量，用于将热量辐射到真空处理装置的外部的热辐射路径和热量用于调节内部热传导路径和散热路径之间的热传递量的传导路径。优选地，将热管施加到内部热传导路径。

75. 发明授权

US07807581B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07807581B2
公开(公告)日：2010-10-05
申请号：US11683014
申请日：2007-03-07
申请人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

76. 发明申请

US20100215541A1 Device and method for producing high power microwave plasma 审中-公开
标题翻译：用于生产高功率微波等离子体的装置和方法
公开(公告)号：US20100215541A1
公开(公告)日：2010-08-26
申请号：US12311838
申请日：2007-10-11
申请人： Ralf Spitzl
发明人： Ralf Spitzl
IPC分类号： A61L2/14 , H05H1/30 , B01J19/12 , C23F1/08 , C23C16/513 , C23F1/04
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/3222
摘要： A device for producing high power microwave plasmas. The device comprises at least one microwave feed that is surrounded by at least one dielectric tube. A dielectric fluid flows through the space between the microwave feed and the outer dielectric tube. The dielectric fluid has a small dielectric loss factor tan δ in the region of between 10−2 to 10−7. A fluid cools at least the outer dielectric tube.
摘要翻译：用于生产高功率微波等离子体的装置。该装置包括由至少一个电介质管包围的至少一个微波馈入。介电流体流过微波进料和外部介质管之间的空间。电介质流体在10-2至10-7之间的介电损耗因子tanδ小。流体至少冷却外部电介质管。

77. 发明授权

US07780791B2 Apparatus for an optimized plasma chamber top piece 有权
标题翻译：用于优化等离子体室顶部的装置
公开(公告)号：US07780791B2
公开(公告)日：2010-08-24
申请号：US10883287
申请日：2004-06-30
申请人： Leonard J. Sharpless , Keith Comendant
发明人： Leonard J. Sharpless , Keith Comendant
IPC分类号： C23C16/505 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32522 , H01J37/321
摘要： A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate; and an optimized top piece coupled to the bottom piece, the top piece further configured for a heating and cooling system. Wherein, the heating and cooling system is substantially shielded from the electromagnetic field by the optimized top piece, and the optimized top piece can substantially be handled by a single person.
摘要翻译：描述了一种用于处理衬底的等离子体处理系统。等离子体处理系统包括底部件，其包括配置为保持基板的卡盘。等离子体处理系统还包括被配置为产生电磁场以产生用于处理衬底的等离子体的感应线圈; 以及联接到所述底部件的优化的顶部件，所述顶部件还构造成用于加热和冷却系统。其中，加热和冷却系统通过优化的顶部部件基本上与电磁场屏蔽，并且优化的顶部部件可以基本上由单个人操作。

78. 发明申请

US20100124613A1 Heater integrated thermocouple 审中-公开
标题翻译：加热器集成热电偶
公开(公告)号：US20100124613A1
公开(公告)日：2010-05-20
申请号：US12313480
申请日：2008-11-19
申请人： Remco Van Den Berg
发明人： Remco Van Den Berg
IPC分类号： C23C16/448 , B05C11/00 , B05D3/02
CPC分类号： C23C16/4401 , C23C16/52 , H01J37/32458 , H01J37/32522 , H01J37/34 , H05B3/44
摘要： The present invention discloses a system and method for relieving stresses from a layer deposited on the surface of a functional element used inside a reaction chamber. The system includes a heater which is integrated with the functional element. The heater heats the functional element to a temperature above the wafer processing temperature and independent of the wafer processing temperature in the reaction chamber. The independent heating of the reaction chamber causes cracking of the deposited layer. This relieves the stresses that are developed in the deposited layer and consequently, the functional element is safeguarded from failure.
摘要翻译：本发明公开了一种用于减轻沉积在反应室内使用的功能元件的表面上的层的应力的系统和方法。该系统包括与功能元件集成的加热器。加热器将功能元件加热到高于晶片加工温度的温度，并且与反应室中的晶片加工温度无关。反应室的独立加热导致沉积层的破裂。这减轻了在沉积层中产生的应力，从而保护了功能元件不发生故障。

79. 发明授权

US07674351B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07674351B2
公开(公告)日：2010-03-09
申请号：US10929439
申请日：2004-08-31
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32513 , H01J37/32522 , H01J37/32807 , H01J37/32816 , H01J37/32908 , Y10S156/916
摘要： A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
摘要翻译：一种真空处理装置，包括设置在真空容器的外侧壁构件内部的内壁构件，所述内壁构件围绕样品台的一侧放置待处理样品并面向等离子体在内壁构件内部的腔室。该装置还包括一个上部构件，其布置在真空室中，位于内壁构件的凸缘部分的上方，与凸缘部分的上表面接触并且在真空容器的内部减小的状态下向下压力压力。内壁构件通过温度调节装置热连接，温度调节装置通过凸缘部分的上表面和上部构件来控制内壁构件的温度。

80. 发明申请

US20100024732A1 Systems for Flash Heating in Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积中的闪光加热系统
公开(公告)号：US20100024732A1
公开(公告)日：2010-02-04
申请号：US11422006
申请日：2006-06-02
申请人： Nima Mokhlesi , Randhir Thakur
发明人： Nima Mokhlesi , Randhir Thakur
IPC分类号： C23C16/54
CPC分类号： C23C16/4401 , C23C16/308 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/56 , H01J37/32522 , H01L21/67109 , H01L21/67115
摘要： System and methods for flash heating of materials deposited using atomic layer deposition techniques are disclosed. By flash heating the surface of the deposited material after each or every few deposition cycles, contaminants such as un-reacted precursors and byproducts can be released from the deposited material. A higher quality material is deposited by reducing the incorporation of impurities. A flash heating source is capable of quickly raising the temperature of the surface of a deposited material without substantially raising the temperature of the bulk of the substrate on which the material is being deposited. Because the temperature of the bulk of the substrate is not significantly raised, the bulk acts like a heat sink to aid in cooling the surface after flash heating. In this manner, processing times are not significantly increased in order to allow the surface temperature to reach a suitably low temperature for deposition.
摘要翻译：公开了使用原子层沉积技术沉积的材料的闪蒸加热的系统和方法。通过在每个或几个沉积循环之后快速加热沉积材料的表面，可以从沉积材料中释放诸如未反应前体和副产物的污染物。通过减少杂质的掺入沉积更高质量的材料。闪光加热源能够快速提高沉积材料的表面的温度，而不会基本上提高材料沉积的基底的体积的温度。因为基板的体积的温度没有显着上升，所以散热器的作用就像散热器，以帮助在闪光加热之后冷却表面。以这种方式，为了使表面温度达到适当低的沉积温度，处理时间不会显着增加。

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